Polymorphous Si thin films from radio frequency plasmas of SiH4 diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy

In this study, we present a detailed structural characterization by means of transmission electron microscopy and Raman spectroscopy of polymorphous silicon (pm-Si:H) thin films deposited using radio-frequency dust-forming plasmas of SiH4 diluted in Ar. Square-wave modulation of the plasma and gas temperature was varied to obtain films with different nanostructures. Transmission electron microscopy and electron diffraction have shown the presence of Si crystallites of around 2 nm in the pm-Si:H films, which are related to the nanoparticles formed in the plasma gas phase coming from their different growth stages, named particle nucleation and coagulation. Raman scattering has proved the role of the film nanostructure in the crystallization process induced ¿in situ¿ by laser heating.

Ion assisted deposition of thin films by substrate tuned radio frequency magnetron sputtering

The substrate tuning technique was applied to a radio frequency magnetron sputtering system to obtain a variable substrate bias without an additional source. The dependence of the substrate bias on the value of the external impedance was studied for different values of chamber pressure, gas composition and rf input power. A qualitative explanation of the results is given, based on a simple model, and the role of the stray capacitance is clearly disclosed. Langmuir probe measurements show that this system allows independent control of the ion flux and the ion energy bombarding the growing film. For an argon flow rate of 2.8 sccm and a radio frequency power of 300 W (intermediate values of the range studied) the ion flux incident on the substrate was 1.3 X 1020-m-2-s-1. The maximum ion energy available in these conditions can be varied in the range 30-150 eV. As a practical application of the technique, BN thin films were deposited under different ion bombardment conditions. An ion energy threshold of about 80 eV was found, below which only the hexagonal phase was present in the films, while for higher energies both hexagonal and cubic phase were present. A cubic content of about 60% was found for an ion energy of 120 V.

Influence of pressure and radio frequency power on deposition rate and structural properties of hydrogenated amorphous silicon thin films prepared by plasma deposition

The influence of radio frequency (rf) power and pressure on deposition rate and structural properties of hydrogenated amorphous silicon (a-Si:H) thin films, prepared by rf glow discharge decomposition of silane, have been studied by phase modulated ellipsometry and Fourier transform infrared spectroscopy. It has been found two pressure regions separated by a threshold value around 20 Pa where the deposition rate increases suddenly. This behavior is more marked as rf power rises and reflects the transition between two rf discharges regimes. The best quality films have been obtained at low pressure and at low rf power but with deposition rates below 0.2 nm/s. In the high pressure region, the enhancement of deposition rate as rf power increases first gives rise to a reduction of film density and an increase of content of hydrogen bonded in polyhydride form because of plasma polymerization reactions. Further rise of rf power leads to a decrease of polyhydride bonding and the material density remains unchanged, thus allowing the growth of a-Si:H films at deposition rates above 1 nm/s without any important detriment of material quality. This overcoming of deposition rate limitation has been ascribed to the beneficial effects of ion bombardment on the a-Si:H growing surface by enhancing the surface mobility of adsorbed reactive species and by eliminating hydrogen bonded in polyhydride configurations.

2013 Legislative Reception Expenditures report

This report discloses the total amount expended on the reception held for all members of the general assembly, hosted by the Iowa DOT.

Reception of Walras' theory of exchange and theory of production in Russia

This paper evaluates the reception of Léon Walras' ideas in Russia before 1920. Despite an unfavourable institutional context, Walras was read by Russian economists. On the one hand, Bortkiewicz and Winiarski, who lived outside Russia and had the opportunity to meet and correspond with Walras, were first class readers and very good ambassadors for Walras' ideas, while on the other, the economists living in Russia were more selective in their readings. They restricted themselves to Walras' Elements of Pure Economics, in particular, its theory of exchange, while ignoring its theory of production. We introduce a cultural argument to explain their selective reading. JEL classification numbers: B 13, B 19.

Valoración quirúrgica del 5º radio

Este trabajo hace un repaso de la biomecánica y patomecánica del pie, además de describir la etiologíay la clínica del quintus varus y del 5º dedo en martillo. El autor describe un test valorativo pre- y post-quirúrgico para el 5º radio, así como las técnicasquirúrgicas de 5º radio habituales.

Soporte funcional del primer radio: revisión de varios casos clínicos

Los autores presentan una clasificación más actual de las patologías del pie, basándose en tres aspectos: morfológico, funcional y degenerativo. Esta nueva clasificación entendemos que reemplazaría a las que se han venido utilizando hasta el momento las cuales a menudo no son útiles para los podólogos. Asimismo en este artículo se describe el proceso de aplicación del soporte funcional del primer radio, las características de los materiales utilizados en su confección y varios casos clínicos, de diferente etiología a los cuales se le ha aplicado este tipo de soporte.

Deformación en flexión plantar del primer radio

La posición del primer radio tanto desde el plano frontal como desde el plano sagital, es de vital importancia para la consecución de una correcta y adecuada marcha, así como para mantener la estructura anatómica del pie durante la bipedestación estática. La deformidad en flexión plantar del primer radio modifica estos parámetros creando mecanismos compensatorios que pueden afectar a otras unidades funcionales articulares, tanto del mediopié como del retropié, lo que puede dar lugar a un patrón de metatarsalgia de difícil valoración al tener que contemplar y analizar varios diagnósticos y sus respectivos patrones mecánicos: el equino de columna lateral, el retropié varo compensado y el primer radio plantarflexionado flexible. Se presenta un caso clínico para su análisis conjunto.

2014 Legislative Reception Expenditures report

This report discloses the total amount expended on the reception held for all members of the general assembly, hosted by the Iowa Department of Transportation.

Síndrome del dolor regional complejo tipo I en las fracturas del extremo distal del radio

Introducción: Las fracturas distales de radio (FDR) presentan diferentes resultadosfuncionales siendo desfavorables entre el 24% y el 31% de los casos. Una de lascomplicaciones más frecuentes es el síndrome del dolor regional complejo tipo I(SDRC-I), cuyo origen es desconocido. Sólo el 20-30% de los pacientes recuperarán sugrado de funcionalidad anterior.Objetivos: Estimar la prevalencia de SDRC-I tras una FDR de acuerdo a cuatro tipos detratamiento.Métodos: estudio de una serie de casos retrospectivos. La población de referencia hansido los 391 trabajadores afiliados a una Mutua en Cataluña y diagnosticados deFDR tras una lesión por accidente laboral durante lo años 2008-2010.Los casos han sido trabajadores accidentados que tras una FDR desarrollaron el SDRCI.Como variable dependiente se ha utilizado el diagnóstico de SDRC-I; como variablesindependientes el tipo de tratamiento, la edad, el sexo, la ocupación y el mecanismo dela lesión.Resultados: el 19,7% de la muestra ha desarrollado SDRC-I, siendo esta prevalenciasuperior en los pacientes intervenidos mediante la técnica de tracción bipolar o conagujas de Kirschner; 29,17% y 30,56% respectivamente, que para aquellos en los quese ha realizado un tratamiento conservador o una intervención quirúrgica con placa en Ty tornillos; 15,92% y 15,79%.Conclusiones El tratamiento conservador y la técnica quirúrgica de fijación con placaen T y tornillos han dado una menor prevalencia de SDRC-I.Los mecanismos de lesión asociados a una mayor fuerza presentan fracturas másinestables y requieren un tratamiento quirúrgico. Los tratamientos conservadores sonlos más usados en edades mayores relacionados con fracturas estables.A nivel clínico se extrae una recomendación profiláctica con Vitamina C para evitar laaparición de SDRC-I sobre los pacientes de edad comprendida entre los 36 y los 55años, con mecanismo lesional de caída o caída desde altura, intervenidos con agujas de Kirschner o tracción bipolar.

Production of nanometric particles in radio frequency glow discharges in mixtures of silane and methane

The formation of silicon particles in rf glow discharges has attracted attention due to their effect as a contaminant during film deposition or etching. However, silicon and silicon alloy powders produced by plasma¿enhanced chemical vapor deposition (PECVD) are promising new materials for sintering ceramics, for making nanoscale filters, or for supporting catalytic surfaces. Common characteristics of these powders are their high purity and the easy control of their stoichiometry through the composition of the precursor gas mixture. Plasma parameters also influence their structure. Nanometric powders of silicon¿carbon alloys exhibiting microstructural properties such as large hydrogen content and high surface/volume ratio have been produced in a PECVD reactor using mixtures of silane and methane at low pressure (-1 Torr) and low frequency square¿wave modulated rf power (13.56 MHz). The a¿Si1¿xCx:H powders were obtained from different precursor gas mixtures, from R=0.05 to R=9, where R=[SiH4]/([SiH4]+[CH4]). The structure of the a¿Si1¿xCx:H powder was analyzed by several techniques. The particles appeared agglomerated, with a wide size distribution between 5 and 100 nm. The silane/methane gas mixture determined the vibrational features of these powders in the infrared. Silicon-hydrogen groups were present for every gas composition, whereas carbon¿hydrogen and silicon¿carbon bonds appeared in methane¿rich mixtures (R-0.6). The thermal desorption of hydrogen revealed two main evolutions at about 375 and 660¿°C that were ascribed to hydrogen bonded to silicon and carbon, respectively. The estimated hydrogen atom concentration in the sample was about 50%.