Energy transfer in molecular collisions

Two general, numerically exact, quantum mechanical methods have been developed for the calculation of energy transfer in molecular collisions. The methods do not treat electronic transitions because of the exchange symmetry of the electrons. All interactions between the atoms in the system are written as potential energies.

The first method is a matrix generalization of the invariant imbedding procedure, ^{17, 20} adapted for multi-channel collision processes. The second method is based on a direct integration of the matrix Schrödinger equation, with a re-orthogonalization transform applied during the integration.

Both methods have been applied to a collinear collision model for two diatoms, interacting via a repulsive exponential potential. Two major studies were performed. The first was to determine the energy dependence of the transition probabilities for an H₂ on the H₂ model system. Transitions are possible between translational energy and vibrational energy, and from vibrational modes of one H₂ to the other H₂. The second study was to determine the variation of vibrational energy transfer probability with differences in natural frequency of two diatoms similar to N₂.

Comparisons were made to previous approximate analytical solutions of this same problem. For translational to vibrational energy transfer, the previous approximations were not adequate. For vibrational to vibrational energy transfer of one vibrational quantum, the approximations were quite good.

Digital Quantum Rabi and Dicke Models in Superconducting Circuits

We propose the analog-digital quantum simulation of the quantum Rabi and Dicke models using circuit quantum electrodynamics (QED). We find that all physical regimes, in particular those which are impossible to realize in typical cavity QED setups, can be simulated via unitary decomposition into digital steps. Furthermore, we show the emergence of the Dirac equation dynamics from the quantum Rabi model when the mode frequency vanishes. Finally, we analyze the feasibility of this proposal under realistic superconducting circuit scenarios.

Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.

Rolling of thin strip and foil: Application of a tribological model for "mixed" lubrication

A mechanical model of cold rolling of foil is coupled with a sophisticated tribological model. The tribological model treats the "mixed" lubrication regime of practical interest, in which there is "real" contact between the roll and strip as well as pressurized oil between the surfaces. The variation of oil film thickness and contact ratio in the bite is found by considering flattening of asperities on the foil and the build-up of hydrodynamic pressure through the bite. The boundary friction coefficient for the contact areas is taken from strip drawing tests under similar tribological conditions. Theoretical results confirm that roll load and forward slip decrease with increasing rolling speed due to the decrease in contact ratio and friction. The predictions of the model are verified using mill trials under industrial conditions. For both thin strip and foil, the load predicted by the model has reasonable agreement with the measurements. For rolling of foil, forward slip is overestimated. This is greatly improved if a variation of friction through the bite is considered.

Coexistence of high-bit-rate quantum key distribution and data on optical fiber

Quantum key distribution (QKD) uniquely allows distribution of cryptographic keys with security verified by quantum mechanical limits. Both protocol execution and subsequent applications require the assistance of classical data communication channels. While using separate fibers is one option, it is economically more viable if data and quantum signals are simultaneously transmitted through a single fiber. However, noise-photon contamination arising from the intense data signal has severely restricted both the QKD distances and secure key rates. Here, we exploit a novel temporal-filtering effect for noise-photon rejection. This allows high-bit-rate QKD over fibers up to 90 km in length and populated with error-free bidirectional Gb/s data communications. With high-bit rate and range sufficient for important information infrastructures, such as smart cities and 10 Gbit Ethernet, QKD is a significant step closer towards wide-scale deployment in fiber networks.

Gaussian Approximation Potential: an interatomic potential derived from first principles Quantum Mechanics

Simulation of materials at the atomistic level is an important tool in studying microscopic structure and processes. The atomic interactions necessary for the simulation are correctly described by Quantum Mechanics. However, the computational resources required to solve the quantum mechanical equations limits the use of Quantum Mechanics at most to a few hundreds of atoms and only to a small fraction of the available configurational space. This thesis presents the results of my research on the development of a new interatomic potential generation scheme, which we refer to as Gaussian Approximation Potentials. In our framework, the quantum mechanical potential energy surface is interpolated between a set of predetermined values at different points in atomic configurational space by a non-linear, non-parametric regression method, the Gaussian Process. To perform the fitting, we represent the atomic environments by the bispectrum, which is invariant to permutations of the atoms in the neighbourhood and to global rotations. The result is a general scheme, that allows one to generate interatomic potentials based on arbitrary quantum mechanical data. We built a series of Gaussian Approximation Potentials using data obtained from Density Functional Theory and tested the capabilities of the method. We showed that our models reproduce the quantum mechanical potential energy surface remarkably well for the group IV semiconductors, iron and gallium nitride. Our potentials, while maintaining quantum mechanical accuracy, are several orders of magnitude faster than Quantum Mechanical methods.

First principles interatomic potential for tungsten based on Gaussian process regression

An accurate description of atomic interactions, such as that provided by first principles quantum mechanics, is fundamental to realistic prediction of the properties that govern plasticity, fracture or crack propagation in metals. However, the computational complexity associated with modern schemes explicitly based on quantum mechanics limits their applications to systems of a few hundreds of atoms at most. This thesis investigates the application of the Gaussian Approximation Potential (GAP) scheme to atomistic modelling of tungsten - a bcc transition metal which exhibits a brittle-to-ductile transition and whose plasticity behaviour is controlled by the properties of $\frac{1}{2} \langle 111 \rangle$ screw dislocations. We apply Gaussian process regression to interpolate the quantum-mechanical (QM) potential energy surface from a set of points in atomic configuration space. Our training data is based on QM information that is computed directly using density functional theory (DFT). To perform the fitting, we represent atomic environments using a set of rotationally, permutationally and reflection invariant parameters which act as the independent variables in our equations of non-parametric, non-linear regression. We develop a protocol for generating GAP models capable of describing lattice defects in metals by building a series of interatomic potentials for tungsten. We then demonstrate that a GAP potential based on a Smooth Overlap of Atomic Positions (SOAP) covariance function provides a description of the $\frac{1}{2} \langle 111 \rangle$ screw dislocation that is in agreement with the DFT model. We use this potential to simulate the mobility of $\frac{1}{2} \langle 111 \rangle$ screw dislocations by computing the Peierls barrier and model dislocation-vacancy interactions to QM accuracy in a system containing more than 100,000 atoms.

Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field

A systematic investigation is made on the influence of the longitudinal and transverse period distributions of quantum dots on the elastic strain field. The results showed that the effects of the longitudinal period and transverse period on the strain field are just opposite along the direction of center-axis of the quantum dots, and under proper conditions, both effects can be eliminated. The results demonstrate that in calculating the effect of the strain field on the electronic structure, one must take into account the quantum dots period distribution, and it is inadequate to use the isolated quantum dot model in simulating the strain field.

InAs/GaAs single-electron quantum dot qubit

The time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an InAs/GaAs quantum dot. The results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. The interaction energy E-ij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. We find that E-11]E-12]E-22, and E-ij decreases as the distance between the two quantum dots increases. We present a parameter-phase diagram which defines the parameter region for the use of an InAs/GaAs quantum dot as a two-level quantum system in quantum computation. A static electric field is found to efficiently prolong the decoherence time. Our results should be useful for designing the solid-state implementation of quantum computing. (C) 2001 American Institute of Physics.

Controllable negative and positive group delay in transmission through a single quantum well at finite magnetic fields

We investigate the controllable negative and positive group delay in transmission through a single quantum well at the finite longitudinal magnetic fields. It is shown that the magneto-coupling effect between the longitudinal motion component and the transverse Landau orbits plays an important role in the group delay. The group delay depends not only on the width of potential well and the incident energy, but also on the magnetic-field strengthen and the Landau quantum number. The results show that the group delay can be changed from positive to negative by the modulation of the magnetic field. These interesting phenomena may lead to the tunable quantum mechanical delay line. (c) 2007 Elsevier B.V. All rights reserved.

Linear polarization of photoluminescence in quantum wires

The linear character of the polarization of the luminescence in porous Si is studied experimentally, and the corresponding luminescence characteristics in quantum wires are studied theoretically using a quantum cylindrical model in the framework of the effective-mass theory. From the experimental and theoretical results it is concluded that there is a stronger linear polarization parallel to the wire direction than there is perpendicular to the wire, and that it is connected with the valence band structure in quantum confinement in two directions. The theoretical photoluminescence spectra of the parallel and perpendicular polarization directions, and the degree of polarization as functions of the radius of the wire and the temperature are obtained for In0.53Ga0.47As quantum wires and porous silicon. From the theory, we demonstrated that the degree of polarization decreases with increasing temperature and radius, and that this effect is more apparent for porous Si. The theoretical results are in good agreement with the experimental results for the InGaAs quantum wires, and in qualitative agreement with those for the porous silicon.

Theoretical study on spherical proton emission

The proton radioactivity half-lives of spherical proton emitters are investigated within a generalized liquid drop model (GLDM), including the proximity effects between nuclei in a neck and the mass and charge asymmetry. The penetrability is calculated in the WKB approximation and the assault frequency is estimated by the quantum mechanism method considering the structure of the parent nucleus. The spectroscopic factor is taken into account in half-life calculation, which is obtained by employing the relativistic mean field (RMF) theory. The half-lives within the GLDM are compared with the experimental data and other theoretical values. The results show that the GLDM works quite well for spherical proton emitters when the assault frequency is estimated by the quantum mechanical method and the spectroscopic factor is considered.

State-selective electron capture for keV He2+ ions on helium collisions studied by recoil momentum spectroscopy

State-selective single electron capture cross sections are measured by recoil ion momentum spectroscopy technique for He2+ on He at 30 keV incident energy. The cross sections for capture into ground and excited states are obtained and compared to classical model calculations as well as to the quantum mechanical calculations. The experimental results are in good agreement with quantum mechanical results.

Studies on the electrical conductivity of carbon black filled polymers

The conductivity mechanism for a carbon black (CB) filled high-density polyethylene (HDPE) compound was investigated in this work. From the experimental results obtained, it can be seen that the relation between electrical current density (J) and applied voltage across the sample (V) coincides with Simmons's equation (i.e., the electrical resistivity of the compound decreases with the applied voltage, especially at the critical voltage). The minimum electrical resistivity occurs near the glass transition temperature (T-g) of HDPE (198 K). It can be concluded that electron tunneling is an important mechanism and a dominant transport process in the HDPE/CB composite. A new model of carbon black dispersion in the matrix was established, and the resistivity was calculated by using percolation and quantum mechanical theories. (C) 1996 John Wiley & Sons, Inc.

Quantum manifestations of closed orbits in the photoexcitation scaled spectrum of the hydrogen atom in crossed fields

The scaled photoexcitation spectrum of the hydrogen atom in crossed electric and magnetic fields has been obtained by means of accurate quantum mechanical calculation using a new algorithm. Closed orbits in the corresponding classical system have also been obtained, using a new, efficient and practical searching procedure. Two new classes of closed orbit have been identified. Fourier transforming each photoexcitation quantum spectrum to yield a plot against scaled action has allowed direct comparison between peaks in such plots and the scaled action values of closed orbits, Excellent agreement has been found with all peaks assigned.