First demonstration of two photon absorption in a semiconductor waveguide pumped by a diode laser

For the first time, lasers have been used to induce a fast all-optical nonresonant nonlinearity at wavelengths well beyond the band edge in a GaAs/GaAlAs multiquantum well waveguide. Using a Q-switched diode laser, which gave optical pulses of 3.5 ps duration and 7 W peak power, an intensity-dependent transmission was recorded that was consistent with the presence of two photon absorption in the waveguide. The measured two photon absorption coefficient was 11 ± 2cm/GW.

Nanotube-based passively mode-locked Ytterbium-pumped Raman laser

Over the past decades mode-locked fibre lasers have been extensively refined and developed, with most research efforts focussing on employing rare-earth doped fibres as the active elements [1]. This presents the problem that operation is limited to regions of the spectrum where such elements exhibit gain [1]. Raman amplification in silica fibre is an attractive way to overcome this spectral limitation, with gain available across the entire transparency window (300 nm - 2300 nm) [2-4]. There have been a number of reports utilising Raman gain in ultrashort pulse sources [2-4], however none using a broadband saturable absorber, such as carbon nanotubes [5-7] and graphene [7-9]. A broadband saturable absorber is an essential pre-requisite in order to fully exploit the wavelength flexibility provided by the Raman gain in short pulse mode-locked fiber lasers. © 2011 IEEE.

20 Gb/s QPSK transmission using an electro-optically modulated vertical-cavity surface-emitting laser

20 Gb/s QPSK transmission over 100 m of OM3 fibre using an EOM VCSEL under QPSK modulation is reported. Bit-error-ratio measurements are carried out to express the quality of the transmission scheme. © 2011 OSA.

20 Gb/s QPSK transmission using an electro-optically modulated vertical-cavity surface-emitting laser

20 Gb/s QPSK transmission over 100 m of OM3 fibre using an EOM VCSEL under QPSK modulation is reported. Bit-error-ratio measurements are carried out to express the quality of the transmission scheme. © 2011 Optical Society of America.

Digital data transmission using electro-optically modulated vertical-cavity surface-emitting laser with saturable absorber

An electro-optically (EO) modulated oxide-confined vertical-cavity surface-emitting laser (VCSEL) containing a saturable absorber in the VCSEL cavity is studied. The device contains an EO modulator section that is resonant with the VCSEL cavity. A type-II EO superlattice medium is employed in the modulator section and shown to result in a strong negative EO effect in weak electric fields. Applying the reverse bias voltages to the EO section allows triggering of short pulses in the device. Digital data transmission (return-to-zero pseudo-random bit sequence, 27-1) at 10Gb/s at bit-error-rates well below 10-9 is demonstrated. © 2014 AIP Publishing LLC.

Experimental study on a diode-pumped passively mode-locking Nd : GdVO4/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO4 laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO4 laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.

Diode-pumped passively mode-locked YVO4/Nd : YVO4 composite crystal laser with LT-In0.25Ga0.75As saturable absorber

A passively mode-locked all-solid-state YVO4/Nd:YVO4 composite crystal laser was realized with a low temperature (LT) In0.25Ga0.75As semiconductor saturable absorber mirror. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Both the Q-switch and continous-wave mode locking operation were experimentally realized. At a pump power of 4 W, the Q-switched mode locking changed to continuous wave mode locking. An average output power of 4.1 W with 5 ps pulse width was achieved at the pump power of 12 W, corresponding to an optical-optical conversion efficiency of 34.2%.

Diode-pumped self-starting mode-locked Nd : YVO4 laser with semiconductor saturable absorber output coupler

By using a semiconductor saturable-absorber output coupler as a mode-locking device, we experimentally realized the operation of a diode-pumped passively mode-locked Nd:YVO4 laser. Stable laser pulses with duration of 2.3 ps were generated at the output power of about 1 W. With increasing the pump power to 9 W, the maximum mode-locked power of 1.7 W was obtained, which corresponds to a slope conversion efficiency of 44% and optical-to-optical conversion efficiency of 19%.

Diode-end-pumped passively mode-locked ceramic Nd : YAG Laser with a semiconductor saturable mirror

We report on a diode- pumped CW passively mode locked ceramic Nd: YAG laser with SESAM ( semiconductor saturable absorber mirror), wavelength 1064nm. At a pump power of 7.6w, the pulse width was estimated to be similar to 8.3ps with repetition rate similar to 130MHz and the average output power was 1.59w. To our knowledge, this was the first demonstration that ceramic Nd: YAG was used for diode pumped CW passively mode locking. (C) 2005 Optical Society of America.

Passive mode locking of diode-end-pumped Nd : GdVO4 laser with an In0.25Ga0.75As output coupler

Passive mode locking of a diode-pumped Nd:GdVO4 laser was demonstrated using In0.25Ga0.75As as saturable absorber as well as output coupler. The pulse width was measured to be about 16 ps with a repetition rate of 146 MHz. The average output power was 120 mW with pump power of 6 W. To our knowledge, this is the first demonstration on a passively mode-locked Nd:GdVO4 laser by using an In0.25Ga0.75As output coupler. (C) 2004 Elsevier B.V. All rights reserved.

Q-switched and mode-locked diode-pumped Nd : YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72KHz have been obtained. The maximum average output power was 1.45W at 8W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers. (c) 2007 Elsevier Ltd. All rights reserved.

Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature

Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q- switched and mode- locked ( QML) 1064 nm operation was achieved in a very simple compact plane- concave cavity Nd: YVO4 laser, it was so short that the pulses can be used as Q- switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q- switched pulse was 2.94 kW and 32.3 mu J, respectively. The mode- locked pulse trains inside the Q- switched pulse envelope had a repetition rate of 800 MHz.

A bidirectionall diode-pumped, passively mode-locked Nd : YVO4 ring laser with a low-temperature-grown semiconductor saturable absorber mirror

We report the operation of a bidirectional picosecond pulsed ring Nd:YVO4 laser based on a low-temperature-grown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5 MHz, pulse duration of 81 ps, power of 2 x 200 mW.