Bismuth-activated luminescent materials for broadband optical amplifier in WDM system

New broadband near infrared luminescence covering the whole work windows (1260-1625 nm) of the current wavelength division multiplexing (WDM) system was found from bismuth-activated M2O-Al2O3-SiO2 (M = Li, Na) and Li2O-Ta2O5-SiO2 glasses at room temperature in the case of 808 nm-laser excitation. But the near infrared luminescence mechanism of the bismuth-activated glasses is not well understood up to now. The figure-of-merits of bandwidth and gain of the glasses are better than those of Er3+-doped silicate glasses and Ti3+ doped sapphire, implying they are the promising gain-medium candidates for the broadband amplifiers and the widely tunable laser sources. (c) 2007 Elsevier B.V. All rights reserved.

Wavelength conversion using semiconductor optical amplifiers

This paper reports a detailed theoretical study of the dynamics of wavelength conversion using cross-gain and cross-phase modulation in semiconductor optical amplifiers (SOA's) involving a large signal, multisection rate equation model. Using this model, recently reported experimental results have been correctly predicted and the effects of electrical and optical pumping on the conversion speed, modulation index, and phase variation of the converted signal have been considered. The model predicts, in agreement with experimental data, that recovery rates as low as 12 ps are possible if signal and pump powers in excess of 14 dBm are used. It also indicates that conversion speeds up to 40 Gb/s may be achieved with less than 3 dB dynamic penalty. The employment of cross-phase modulation increases the speed allowing, for example, an improvement to 60 Gb/s with an excess loss penalty less than 1 dB.

Simultaneous pulse compression and jitter reduction at 10GHz using novel self-seeding gain-switched DFB laser incorporating a DILM

A novel scheme using a 10 GHz gain-switched DFB laser with simultaneous pulse width and jitter compression allows generation of 380fs pulses with both system limited 150fs jitter and 30 dB extinction ratio. ©1999 Optical Society of America.

High-speed wavelength conversion utilizing birefringence in semiconductor optical amplifiers

This paper describes a novel technique whereby a mixture of cross-phase and cross-gain modulation effects in an SOA causes polarization rotation of a cw probe beam in the presence of a signal pulse, enabling the transmission of the probe through a polarizer to be controlled. The benefits of this approach are: 1) Very high extinction ratios present in the wavelength converted signal (>30 achieved); 2) A non-inverted wavelength converted signal, which is advantageous for chirp-compensation;2 3) A simple and stable experimental set-up, 4) Converted pulses which can be shaped to be faster than the input pulses.

Chirp limitation on high-speed wavelength conversion using semiconductor optical amplifiers

The cross-gain-saturation effect in SOAs, has been shown to enable robust high-speed wavelength conversion. Under strong electrical and optical pumping, conversion speeds in excess of 20 Gbit/s have been illustrated. However, the effect of chirp on transmission distance at such ultrahigh bit rates has not been studied theoretically in detail. This paper considers the chirp introduced on conversion, employing cross-gain saturation, and studies its dependence on amplifier drive current and signal power. It further shows how an increase in injected cw optical power can reduce chirp while improving conversion speed.

Effects of pedestal suppression on gain-switched laser sources for 40 Gbit/s OTDM transmission

The performance of 40 Gbit/s optical time-division multiplexed (OTDM) communication systems can be severely limited when the extinction ratio of the optical pulses is low. This is a consequence of the coherent interference noise between individual OTDM channels. When taken alone, the multiple quantum well-distributed feedback laser+dispersion compensating fiber source exhibits a relatively poor extinction ratio which impairs its potential for use in a 40 Gbit/s OTDM system. However, with the addition of an electroabsorption modulator to suppress the pulse pedestals to better than 30 dB extinction, coherent interference noise is reduced, the bit-error-rate performance is greatly improved, and the source shows good potential for 40 Gbit/s OTDM communication.

High speed performance of Mach-Zehnder all-optical regenerators using semiconductor optical amplifiers

Interferometric Optical Wavelength Converters (IOWCs) provide wavelength conversion functionality at high bit rates, and give low chip and enhanced extinction ratio compared with Cross-Gain wavelength converters. In paper, a numerical simulation is conducted to assess the noise performance of IOWC and its potential for cascading. The details of the experiment and the results obtained are presented.

All-optical 3R regeneration and wavelength conversion in an integrated SOA/DFB laser: Experiment and simulation

The simultaneous all optical 3R regeneration and format conversion in a simple, single integrated device was examined. The integrated device consisted of a semiconductor optical fiber (SOA) monolithically integrated with a distributed feedback (DFB) laser. Gain saturation was employed for the transmission of a data signal regenerated all-optically in the laser/amplifier device. The regeneration of the electrically filtered eye diagrams was observed by noise removal and extinction ratio-improvement by the device.

Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.

Density of photon states in dye-doped chiral nematic liquid crystal cells in the presence of losses and gain

We calculate the density of photon states (DOS) of the normal modes in dye-doped chiral nematic liquid crystal (LC) cells in the presence of various loss mechanisms. Losses and gain are incorporated into the transmission characteristics through the introduction of a small imaginary part in the dielectric constant perpendicular and along the director, for which we assume no frequency dispersion. Theoretical results are presented on the DOS in the region of the photonic band gap for a range of values of the loss coefficient and different values of the optical anisotropy. The obtained values of the DOS at the photonic band gap edges predict a reversal of the dominant modes in the structure. Our results are found to be in good agreement with the experimentally obtained excitation thresholds in chiral nematic LC lasers. The behavior of the DOS is also discussed for amplifying LC cells providing additional insight to the lasing mechanism of these structures. © 2012 American Physical Society.

Density of photon states in dye-doped chiral nematic liquid crystal cells in the presence of losses and gain.

We calculate the density of photon states (DOS) of the normal modes in dye-doped chiral nematic liquid crystal (LC) cells in the presence of various loss mechanisms. Losses and gain are incorporated into the transmission characteristics through the introduction of a small imaginary part in the dielectric constant perpendicular and along the director, for which we assume no frequency dispersion. Theoretical results are presented on the DOS in the region of the photonic band gap for a range of values of the loss coefficient and different values of the optical anisotropy. The obtained values of the DOS at the photonic band gap edges predict a reversal of the dominant modes in the structure. Our results are found to be in good agreement with the experimentally obtained excitation thresholds in chiral nematic LC lasers. The behavior of the DOS is also discussed for amplifying LC cells providing additional insight to the lasing mechanism of these structures.

Linear semiconductor optical amplifiers

The chapter reviews properties and applications of linear semiconductor optical amplifiers (SOA). Section 12.1 covers SOA basics, including working principles, material systems, structures and their growth. Booster or inline amplifiers as well as low-noise preamplifiers are classified. Section 12.2 discusses the influence of parameters like gain, noise figure, gain saturation, gain and phase dynamics, and alpha-factor. In Sect. 12.3, the application of a linear SOA as a reach extender in future access networks is addressed. The input power dynamic range is introduced, and measurements for on-off keying and phase shift keying signals are shown. Section 12.4 presents the state of the art for commercially available SOA and includes a treatment of reflective SOAs (RSOA) as well. © 2012 Springer-Verlag Berlin Heidelberg.

How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors

We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.

Optical bistability in InP/GaInAsP equilateral-triangle-resonator microlasers

Optical bistability is reported in InP/GaInAsP equilateral-triangle-resonator (ETR) microlasers, which are fabricated by planar technology. For a 30 mu m side ETR microlaser with a 2-mu m-wide output waveguide connected to one of the vertices of the ETR, hysteresis loops are observed for the output power versus the injection current from 215 to 235 K. The laser output spectra are measured in the upper and lower states of the hysteresis loop, which show strong mode competition among transverse modes. The hysteresis loops are demonstrated by two-mode rate equations with asymmetric cross gain saturation and different output efficiencies. (C) 2009 Optical Society of America

Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers

We report an experimental and theoretical study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers. The maximum modal gain of the QD laser with five stacks of QDs is as high as 17.5 cm(-1) which is the same as that of the undoped laser with identical structures. The expression of the maximum modal gain is derived and it is indicated that p-doping has no effect to the maximum modal gain. We theoretically calculated the maximum modal gain of the QD lasers and the result is in a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial to achieving a greater maximum modal gain that leads to lower threshold current density and higher differential modal gain, which is good for the application of p-doped 1.3 mu m InAs/GaAs QD lasers in optical communications systems.