On Averaging Null Sequences of Real-Valued Functions

If ξ is a countable ordinal and (fk) a sequence of real-valued functions we define the repeated averages of order ξ of (fk). By using a partition theorem of Nash-Williams for families of finite subsets of positive integers it is proved that if ξ is a countable ordinal then every sequence (fk) of real-valued functions has a subsequence (f'k) such that either every sequence of repeated averages of order ξ of (f'k) converges uniformly to zero or no sequence of repeated averages of order ξ of (f'k) converges uniformly to zero. By the aid of this result we obtain some results stronger than Mazur’s theorem.

A kínai reformfolyamat politikai gazdaságtani logikája (The politico-economic logic of the Chinese reform process)

Kína az elmúlt több mint három évtizedben szegény, elmaradott országból a világgazdaság egyik legfontosabb szereplője lett. Szocialista rendszerét egy sajátos kapitalista rendszer váltotta fel, miközben politikai struktúrája lényegében változatlan maradt. A folyamatok során a vezetés mindvégig ügyelt arra, hogy a kommunista párt egyeduralmát semmi se veszélyeztethesse, ugyanakkor megfelelő források álljanak rendelkezésre hatalma megtartásához. A tanulmány a kínai reformfolyamatot politikai gazdaságtani szempontból vizsgálja, különös figyelmet szentelve az intézményi változásoknak. Bemutatja, milyen okok és tényezők álltak a reformok elindításának hátterében, milyen változások következtek be a szereplők érdekviszonyaiban a reformok előrehaladtával, és mire lehet számítani a reformok jövőjét illetően. Úgy tűnik, hogy a jelenlegi rendszer érdekviszonyai a reformok folytatása ellen hatnak, ellehetetlenítve a piacgazdaság intézményrendszerének további kiépítését. A járadékok és privilégiumok az elitet abban sem teszik érdekeltté, hogy komolyabb politikai reformokat hajtson végre, így a kialakuló csapdahelyzet megakadályozza az átmenet kiteljesedését. ____ In the last three decades China has risen from being a poor and underdeveloped country to being one of the most important players in the world economy. Its planned economy has been replaced by a capitalist system, but its political structure has remained essentially unchanged. The leaders during the reform process have sought constantly to avert dangers to the rule of the Communist Party and gain access to valuable resources that allow power to be retained. The study approaches the Chinese reform process from a politico-economic point of view, focusing primarily on institutional changes. It reveals the main factors behind the various phases of reform, the constantly changing interests of the players, and the possible future of the process. It seems that under the current authoritarian regime, there are vested interests working against a continuation of the reforms and precluding full establishment of the institutional framework of a market economy. The elite is also deterred from implementing serious political reforms by the current rents and privileges. This leads to a trap that prevents completion of the transition process.

Rethinking Professional Practice: The Logic of Competition and the Crisis of Identity in Housing Practice

The relationship between professionalism, education and housing practice has become increasingly strained following the introduction of austerity measures and welfare reforms across a range of countries. Focusing on the development of UK housing practice, this article considers how notions of professionalism are being reshaped within the context of welfare retrenchment and how emerging tensions have both affected the identity of housing professionals and impacted on the delivery of training and education programmes. The article analyses the changing knowledges and skills valued in contemporary housing practice and considers how the sector has responded to the challenges of austerity. The central argument is that a dominant logic of competition has culminated in a crisis of identity for the sector. Although the focus of the article is on UK housing practice, the processes identified have a wider relevance for the analysis of housing and welfare delivery in developed economies.

Mental logic and its difficulties with disjunction

The mental logic theory does not accept the disjunction introduction rule of standard propositional calculus as a natural schema of the human mind. In this way, the problem that I want to show in this paper is that, however, that theory does admit another much more complex schema in which the mentioned rule must be used as a previous step. So, I try to argue that this is a very important problem that the mental logic theory needs to solve, and claim that another rival theory, the mental models theory, does not have these difficulties.

Behavioral equivalence of hidden k-logics: an abstract algebraic approach

This work advances a research agenda which has as its main aim the application of Abstract Algebraic Logic (AAL) methods and tools to the specification and verification of software systems. It uses a generalization of the notion of an abstract deductive system to handle multi-sorted deductive systems which differentiate visible and hidden sorts. Two main results of the paper are obtained by generalizing properties of the Leibniz congruence — the central notion in AAL. In this paper we discuss a question we posed in [1] about the relationship between the behavioral equivalences of equivalent hidden logics. We also present a necessary and sufficient intrinsic condition for two hidden logics to be equivalent.

The development of planar high-K/III-V p-channel MOSFETs for post-silicon CMOS

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of In_x≥0.53Ga_1-xAs/In_0.52Al_0.48As and In_x≥0.1Ga_1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm²/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In_0.85Ga_0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (L_side) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH₄)₂S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al₂O₃/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×10¹²cm^-2eV^-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (I_d,sat=1.14mA/mm), double peaked transconductance (g_m=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (R_on=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of I_d,sat (11×), g_m (5.5×) and R_on (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (L_side) from 1μm down to 70nm improved I_d,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In_0.3Ga_0.7Sb-channel (I_d,sat=49.4mA/mm, g_m=12.3mS/mm, R_on=31.7kΩ.μm) and In_0.4Ga_0.6Sb-channel (I_d,sat=38mA/mm, g_m=11.9mS/mm, R_on=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.

Towards a single crystal Raman spectrum of kaolinite at 77 K

The Raman spectra at 77 K of the hydroxyl stretching of kaolinite were obtained along the three axes perpendicular to the crystal faces. Raman bands were observed at 3616, 3658 and 3677 cm−1 together with a distinct band observed at 3691 cm−1 and a broad profile between 3695 and 3715 cm−1. The band at 3616 cm−1 is assigned to the inner hydroxyl. The bands at 3658 and 3677 cm−1 are attributed to the out-of-phase vibrations of the inner surface hydroxyls. The Raman spectra of the in-phase vibrations of the inner-surface hydroxyl-stretching region are described in terms of transverse and longitudinal optic splitting. The band at 3691 cm−1 is assigned to the transverse optic and the broad profile to the longitudinal optic mode. This splitting remained even at liquid nitrogen temperature. The transverse optic vibration may be curve resolved into two or three bands, which are attributed to different types of hydroxyl groups in the kaolinite.