915 resultados para In situ spectroscopy
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The use of a low-cost benchtop time-domain NMR (TD-NMR) spectrometer to monitor copper electrodeposition in situ is presented. The measurements are based on the strong linear correlation between the concentration of paramagnetic ions and the transverse relaxation rates (R-2) of the solvent protons Two electrochemical NMR (EC-NMR) cells were constructed and applied to monitor the Cu2+ concentration during the electrodeposition reaction. The results show that TD-NMR relaxometry using the Carr-Purcell-Meiboom-Gill pulse sequence can be a very fast, simple, and efficient technique to monitor, in real time, the variation in the Cu2+ concentration during an electrodeposition reaction. This methodology can also be applied to monitor the electrodeposition of other paramagnetic ions, such as Ni2+ and Cr3+, which are commonly used in electroplating.
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Zusammenfassung
Die stöchiometrischen Eisennitride Besonderes Interesse besteht in der Aufklärung desMechanismus der Entstehung der Eisennitride bei derUmsetzung von a-Eisen mitAmmoniak. Diese Reaktion wird großtechnisch zurNitridierhärtung von Eisenwerkstücken genutzt. Als Messmethode wurde die57Fe-Mößbauer-Spektroskopiegewählt, die auf Kernspinübergängen von57Fe beruht. Um in situ-Nitridierungen von Eisenproben mit Ammoniak mitder 57Fe-Mößbauer-Spektroskopieverfolgen zu können, wurde eineHochtemperatur-Messzelle entwickelt, die es erlaubt,Messungen bis 1100 K durchzuführen. Die Messzelle wurde durch Messungen an Eisennitriden mitbekannter Stöchiometrie, wie z.B. Neben 57Fe-Mößbauer-Messungen wurdenim Rahmen des DFG-Schwerpunkt-Programms Reaktivitätin Festkörpern weitere Messungen (u.a.Hochtemperatur-Leitfähigkeitsmessungen)durchgeführt. Die experimentellen Methoden wurden durchBandstruktur-Rechnungen ergänzt. Mit Hilfe der TB-LMTO-ASA-Methode erfolgten Rechnungen anÜbergangsmetallnitriden M3N (M = Mn, Fe, Co,Ni, Cu) der 3d-Reihe. Hierbei konnte der experimentell bestimmte strukturelleÜbergang von hexagonalem Ni3N zu kubischemCu3N bestätigt werden.
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Due to the high price of natural oil and harmful effects of its usage, as the increase in emission of greenhouse gases, the industry focused in searching of sustainable types of the raw materials for production of chemicals. Ethanol, produced by fermentation of sugars, is one of the more interesting renewable materials for chemical manufacturing. There are numerous applications for the conversion of ethanol into commodity chemicals. In particular, the production of 1,3-butadiene whose primary source is ethanol using multifunctional catalysts is attractive. With the 25% of world rubber manufacturers utilizing 1,3-butadiene, there is an exigent need for its sustainable production. In this research, the conversion of ethanol in one-step process to 1,3-butadiene was studied. According to the literature, the mechanisms which were proposed to explain the way ethanol transforms into butadiene require to have both acid and basic sites. But still, there are a lot of debate on this topic. Thus, the aim of this research work is a better understanding of the reaction pathways with all the possible intermediates and products which lead to the formation of butadiene from ethanol. The particular interests represent the catalysts, based on different ratio Mg/Si in comparison to bare magnesia and silica oxides, in order to identify a good combination of acid/basic sites for the adsorption and conversion of ethanol. Usage of spectroscopictechniques are important to extract information that could be helpful for understanding the processes on the molecular level. The diffuse reflectance infrared spectroscopy coupled to mass spectrometry (DRIFT-MS) was used to study the surface composition of the catalysts during the adsorption of ethanol and its transformation during the temperature program. Whereas, mass spectrometry was used to monitor the desorbed products. The set of studied materials include MgO, Mg/Si=0.1, Mg/Si=2, Mg/Si=3, Mg/Si=9 and SiO2 which were also characterized by means of surface area measurements.
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Knowledge of the time interval from death (post-mortem interval, PMI) has an enormous legal, criminological and psychological impact. Aiming to find an objective method for the determination of PMIs in forensic medicine, 1H-MR spectroscopy (1H-MRS) was used in a sheep head model to follow changes in brain metabolite concentrations after death. Following the characterization of newly observed metabolites (Ith et al., Magn. Reson. Med. 2002; 5: 915-920), the full set of acquired spectra was analyzed statistically to provide a quantitative estimation of PMIs with their respective confidence limits. In a first step, analytical mathematical functions are proposed to describe the time courses of 10 metabolites in the decomposing brain up to 3 weeks post-mortem. Subsequently, the inverted functions are used to predict PMIs based on the measured metabolite concentrations. Individual PMIs calculated from five different metabolites are then pooled, being weighted by their inverse variances. The predicted PMIs from all individual examinations in the sheep model are compared with known true times. In addition, four human cases with forensically estimated PMIs are compared with predictions based on single in situ MRS measurements. Interpretation of the individual sheep examinations gave a good correlation up to 250 h post-mortem, demonstrating that the predicted PMIs are consistent with the data used to generate the model. Comparison of the estimated PMIs with the forensically determined PMIs in the four human cases shows an adequate correlation. Current PMI estimations based on forensic methods typically suffer from uncertainties in the order of days to weeks without mathematically defined confidence information. In turn, a single 1H-MRS measurement of brain tissue in situ results in PMIs with defined and favorable confidence intervals in the range of hours, thus offering a quantitative and objective method for the determination of PMIs.
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We have studied Au(55 nm)@SiO2 nanoparticles (NPs) on two low-index phases of gold and platinum single crystal electrodes in ClO4– and SO42– ion-containing electrolytes by both electrochemical methods and in-situ shell-isolated nanoparticle enhanced Raman spectroscopy (SHINERS). We showed the blocking of the electrode with surfactants originating from the synthesis of as-prepared SHINERS NPs. We introduce an efficient procedure to overcome this problem, which provides a fundamental platform for the application of SHINERS in surface electrochemistry and beyond. Our method is based on a hydrogen evolution treatment of the SHINERS-NP-modified single-crystal surfaces. The reliability of our preparation strategy is demonstrated in electrochemical SHINERS experiments on the potential-controlled adsorption and phase formation of pyridine on Au(hkl) and Pt(hkl). We obtained high-quality Raman spectra on these well-defined and structurally carefully characterized single-crystal surfaces. The analysis of the characteristic A1 vibrational modes revealed perfect agreement with the interpretation of single-crystal voltammetric and chronoamperometric experiments. Our study demonstrates that the SHINERS protocol developed in this work qualifies this Raman method as a pioneering approach with unique opportunities for in situ structure and reactivity studies at well-defined electrochemical solid/liquid interfaces.
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The redox property of ceria is a key factor in the catalytic activity of ceria-based catalysts. The oxidation state of well-defined ceria nanocubes in gas environments was analysed in situ by a novel combination of near-ambient pressure X-ray Photoelectron Spectroscopy (XPS) and high-energy XPS at a synchrotron X-ray source. In situ high-energy XPS is a promising new tool to determine the electronic structure of matter under defined conditions. The aim was to quantitatively determine the degree of cerium reduction in a nano-structured ceria-supported platinum catalyst as a function of the gas environment. To obtain a non-destructive depth profile at near-ambient pressure, in situ high-energy XPS analysis was performed by varying the kinetic energy of photoelectrons from 1 to 5 keV, and, thus, the probing depth. In ceria nanocubes doped with platinum, oxygen vacancies formed only in the uppermost layers of ceria in an atmosphere of 1 mbar hydrogen and 403 K. For pristine ceria nanocubes, no change in the cerium oxidation state in various hydrogen or oxygen atmospheres was observed as a function of probing depth. In the absence of platinum, hydrogen does not dissociate and, thus, does not lead to reduction of ceria.
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GaInP nucleation on Ge(100) often starts by annealing of the Ge(100) substrates under supply of phosphorus precursors. However, the influence on the Ge surface is not well understood. Here, we studied vicinal Ge(100) surfaces annealed under tertiarybutylphosphine (TBP) supply in MOVPE by in situ reflection anisotropy spectroscopy (RAS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). While XPS reveals a P termination and the presence of carbon on the Ge surface, LEED patterns indicate a disordered surface probably due to by-products of the TBP pyrolysis. However, the TBP annealed Ge(100) surface exhibits a characteristic RA spectrum, which is related to the P termination. RAS allows us to in situ control phosphorus desorption dependent on temperature.
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We investigated the preparation of single domain Ge(100):As surfaces in a metal-organic vapor phase epitaxy reactor. In situ reflection anisotropy spectra (RAS) of vicinal substrates change when arsenic is supplied either by tertiarybutylarsine or by background As4 during annealing. Low energy electron diffraction shows mutually perpendicular orientations of dimers, scanning tunneling microscopy reveals distinct differences in the step structure, and x-ray photoelectron spectroscopy confirms differences in the As coverage of the Ge(100): As samples. Their RAS signals consist of contributions related to As dimer orientation and to step structure, enabling precise in situ control over preparation of single domain Ge(100): As surfaces.
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Si(100) and Ge(100) substrates essential for subsequent III-V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. Reflectance anisotropy spectroscopy (RAS) enabled us to distinguish characteristic configurations of vicinal Si(100) in situ: covered with oxide, cleaned by thermal removing in H2, and terminated with monohydrides when cooling in H2 ambient. RAS measurements during cooling in H2 ambient after the oxide removal process revealed a transition from the clean to the monohydride terminated Si(100) surface dependent on process temperature. For vicinal Ge(100) we observed a characteristic RA spectrum after annealing and cooling in H2 ambient. According to results from X-ray photo electron spectroscopy and Fourier-transform infrared spectroscopy the spectrum corresponds to the monohydride terminated Ge(100) surface.
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Molecular hydrogen strongly interacts with vicinal Ge(100) surfaces during preparation in a metal organic vapor phase epitaxy reactor. According to X-ray photoemission spectroscopy and Fourier-transform infrared spectroscopy results, we identify two characteristic reflection anisotropy (RA) spectra for H-free and monohydride-terminated vicinal Ge(100) surfaces. RAS allows in situ monitoring of the surface termination and enables spectroscopic hydrogen kinetic desorption studies on the Ge(100) surface. Comparison of evaluated values for the activation energy and the pre-exponential factor of H desorption evaluated at different photon energies reflects that H unevenly affects the shape of the RA spectrum.
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In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.
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Vicinal Ge(100) is the common substrate for state of the art multi-junction solar cells grown by metal-organic vapor phase epitaxy (MOVPE). While triple junction solar cells based on Ge(100) present efficiencies mayor que 40%, little is known about the microscopic III-V/Ge(100) nucleation and its interface formation. A suitable Ge(100) surface preparation prior to heteroepitaxy is crucial to achieve low defect densities in the III-V epilayers. Formation of single domain surfaces with double layer steps is required to avoid anti-phase domains in the III-V films. The step formation processes in MOVPE environment strongly depends on the major process parameters such as substrate temperature, H2 partial pressure, group V precursors [1], and reactor conditions. Detailed investigation of these processes on the Ge(100) surface by ultrahigh vacuum (UHV) based standard surface science tools are complicated due to the presence of H2 process gas. However, in situ surface characterization by reflection anisotropy spectroscopy (RAS) allowed us to study the MOVPE preparation of Ge(100) surfaces directly in dependence on the relevant process parameters [2, 3, 4]. A contamination free MOVPE to UHV transfer system [5] enabled correlation of the RA spectra to results from UHV-based surface science tools. In this paper, we established the characteristic RA spectra of vicinal Ge(100) surfaces terminated with monohydrides, arsenic and phosphorous. RAS enabled in situ control of oxide removal, H2 interaction and domain formation during MOVPE preparation.