Electrical characterization of in situ polymerized polyaniline thin films

The alternating conductivity, sigma*(f) = sigma'(f) + i sigma ''(f), of in situ polymerized polyaniline thin films doped with hydrochloric acid, deposited on top of an interdigitated gold line array previously deposited on glass substrates, were measured in the frequency (f) range between 0.1 Hz to 10 MHz and in the temperature range from 100 to 430 K. The results for sigma'(f) are typical of a disordered solid material: for frequencies lower than a certain hopping frequency gamma(hop), log[sigma'(f)] is frequency-independent rising almost linearly for in logf > gamma(hop). A master curve was thus obtained by plotting the real component of the conductivity using normalized scales sigma'(f)/sigma(dc) and f/gamma(hop) which is indicative of a single process operating in the whole frequency range. An expression encompassing the conduction through a disordered structure taken from previous random free energy barrier model for hopping carriers, as well a dielectric function to represent the capacitive behavior of the PAni was employed to fit the experimental results. The dielectric constant and activation energy for hopping carriers were obtained as function of the polymer doping level. (c) 2007 Elsevier B.V. All rights reserved.

Charge-orbital ordering and phase separation in the two-orbital model for manganites: Roles of Jahn-Teller phononic and Coulombic interactions

The main properties of realistic models for manganites are studied using analytic mean-field approximations and computational numerical methods, focusing on the two-orbital model with electrons interacting through Jahn-Teller (JT) phonons and/or Coulombic repulsions. Analyzing the model including both interactions by the combination of the mean-field approximation and the exact diagonalization method, it is argued that the spin-charge-orbital structure in the insulating phase of the purely JT-phononic model with a large Hund couphng J(H) is not qualitatively changed by the inclusion of the Coulomb interactions. As an important application of the present mean-held approximation, the CE-type antiferromagnetic state, the charge-stacked structure along the z axis, and (3x(2) - r(2))/(3y(2) - r(2))-type orbital ordering are successfully reproduced based on the JT-phononic model with large JH for the half-doped manganite, in agreement with recent Monte Carlo simulation results. Topological arguments and the relevance of the Heisenberg exchange among localized t(2g) spins explains why the inclusion of the nearest-neighbor Coulomb interaction does not destroy the charge stacking structure. It is also verified that the phase-separation tendency is observed both in purely JT-phononic (large JH) and purely Coulombic models in the vicinity of the hole undoped region, as long as realistic hopping matrices are used. This highlights the qualitative similarities of both approaches and the relevance of mixed-phase tendencies in the context of manganites. In addition, the rich and complex phase diagram of the two-orbital Coulombic model in one dimension is presented. Our results provide robust evidence that Coulombic and JT-phononic approaches to manganites are not qualitatively different ways to carry out theoretical calculations, but they share a variety of common features.

Electrical percolation during gelation of lithium doped siloxane-poly(oxyethylene) hybrids

Gelation mechanisms of lithium-doped Siloxane-Poly(oxyethylene) (PEO) hybrids containing polymer of two different molecular weight (500 and 1900 g/mol) were investigated through the evolution of the electrical properties during the solgel transition. The results of electrical measurements, performed by in-situ complex impedance spectroscopy, were correlated with the coordination and the dynamical properties of the lithium ions during the process as shown by Li-7 NMR measurements. For both hybrids sols, a decrease of the conductivity is observed at the initial gelation stage, due to the existence of an inverted percolation process consisting of the progressive separation of solvent molecules containing conducting species in isolated islands during the solid network formation. An increase of conductivity occurs at more advanced stages of gelation and aging, attributed to the increasing connectivity between PEO chains promoted by the formation of crosslinks of siloxane particles at their extremities, favoring hopping motions of lithium ions along the chains.

The application of thermally stimulated processes to the study of poly p-phenylene sulfide

The electrical properties of poly p-phenylene sulfide (PPS) samples sandwiched between metallic electrodes are studied as a function of the applied voltage, temperature, time, electrode materials, and sample thickness. Superlinear current-voltage characteristics are observed, which are explained in terms of Schottky effect and space-charge limited currents (SCLC). The conductivity data for variable-range hopping have also been studied, but the calculated values of density of states are approximately one order of magnitude higher than those obtained by SCLC measurements. From thermally stimulated polarization currents we observed a current peak around 80°C that was related with the glass transition temperature of PPS. © 1993.

Vertical and in-plane electrical transport in InAs/InP semiconductor nanostructures

Vertical and in-plane electrical transport in InAs/InP semiconductors wires and dots have been investigated by conductive atomic force microscopy (C-AFM) and electrical measurements in processed devices. Localized I-V spectroscopy and spatially resolved current images (at constant bias), carried out using C-AFM in a controlled atmosphere at room temperature, show different conductances and threshold voltages for current onset on the two types of nanostructures. The processed devices were used in order to access the in-plane conductance of an assembly with a reduced number of nanostructures. On these devices, signature of two-level random telegraph noise (RTN) in the current behavior with time at constant bias is observed. These levels for electrical current can be associated to electrons removed from the wetting layer and trapped in dots and/or wires. A crossover from conduction through the continuum, associated to the wetting layer, to hopping within the nanostructures is observed with increasing temperature. This transport regime transition is confirmed by a temperature-voltage phase diagram. © 2005 Materials Research Society.

Structural and dielectric properties of relaxor Sr0.5Ba 0.5Bi2Nb2O9 ceramic

Sr0.5Ba0.5Bi2Nb2O 9 ceramic was prepared by a conventional solid state reaction method and studied using X-ray powder diffraction and dielectric measurements. At room temperature, an orthorhombic structure was confirmed and their parameters were obtained using the Rietveld method. Dielectric properties were studied in a broad range of temperatures and frequencies. Typical relaxor behaviour was observed with strong dispersion of the complex relative dielectric permittivity. The temperature of the maximum dielectric constant Tm decreases with increasing frequency, and shifts towards higher temperature side. The activation energy Ea≈0·194±0·03 eV and freezing temperature Ta≈371±2 K values were found using the Vogel-Fulcher relationship. Conduction process in the material may be due to the hopping of charge carriers at low temperatures and small polarons and/or singly ionised oxygen vacancies at higher temperatures. © 2010 Maney Publishing.

Nanoscale effects and polaronic relaxation in CaCu3Ti 4O12 compounds

In the present communication, by using dielectric spectroscopy measurement, the correlations between Nanosized Barrier Layer Capacitance (NBLC) (Bueno et al. (2009) [7]) and the high frequency polaronic near-Debye dipolar relaxation found in CaCu3Ti4O12 compounds was discussed. The polaronic process was confirmed to be closely associated with the ultrahigh dielectric features of CaCu3Ti4O12 materials and its concomitant dielectric loss. Herein, the shift in relaxation frequency as a function of temperature was used for calculating the activation energy for hopping electronic conduction. The value obtained was 33 meV, an energy whose magnitude is compatible and confirmed the hypothesis of polaronic features for this high frequency dipolar relaxation process. Furthermore, it is shown that the nanosized barrier inferred from the NBLC model has a polaronic feature with dielectric permittivity exiting orthogonally to dielectric loss, a phenomenological pattern that contradicts the normally observed behavior for traditional dielectrics but explain the dielectric and conductivity feature of CaCu3Ti4O12 compounds. © 2010 Elsevier Ltd. All rights reserved.

Effect of structural anisotropy on electrical and magnetic properties of polyaniline conducting films

It is shown that highly conducting films of polyaniline protonated with di-esters of sulfosuccinic and sulfophthalic acids which contain alkyl- or alkoxy-type substituents exhibit highly anisotropic structural, electrical and magnetic properties. The layered-like structure of these films can be described as consisting of polyaniline chains which are mainly oriented parallel to the plane of the film and form regular out-of-plane stacks. These stacks are separated by bilayers of the dopant anions. Accordingly, the main anisotropy observed for solution cast films implies in-plane and out-of-plane measurements. An electrical anisotropy of about 80 is found for the in-plane and out-of-plane electronic conductivities at 5 K. The temperature dependences of the in-plane and out-of-plane conductivities are qualitatively similar and have been fitted as a series combination of variable-range-hopping-type and power law contributions. A maximum is observed in the temperature dependence of the electrical anisotropy at low temperature. The films also show a clear anisotropy of magnetization whose temperature and field characteristics depend on the chemical structure of the dopant anion. © 2013 Elsevier B.V.

The effects of water molecules on the electronic and structural properties of peptide nanotubes

The self-assembly of short amino acid chains appears to be one of the most promising strategies for the fabrication of nanostructures. Their solubility in water and the possibility of chemical modification by targeting the amino or carboxyl terminus give peptide-based nanostructures several advantages over carbon nanotube nanostructures. However, because these systems are synthesized in aqueous solution, a deeper understanding is needed on the effects of water especially with respect to the electronic, structural and transport properties. In this work, the electronic properties of l-diphenylalanine nanotubes (FF-NTs) have been studied using the Self-Consistent Charge Density-Functional-based Tight-Binding method augmented with dispersion interaction. The presence of water molecules in the central hydrophilic channel and their interaction with the nanostructures are addressed. We demonstrate that the presence of water leads to significant changes in the electronic properties of these systems decreasing the band gap which can lead to an increase in the hopping probability and the conductivity. © the Owner Societies 2013.

Ergodic crossover in partially self-avoiding stochastic walks

Consider a one-dimensional environment with N randomly distributed sites. An agent explores this random medium moving deterministically with a spatial memory μ. A crossover from local to global exploration occurs in one dimension at a well-defined memory value μ1=log2N. In its stochastic version, the dynamics is ruled by the memory and by temperature T, which affects the hopping displacement. This dynamics also shows a crossover in one dimension, obtained computationally, between exploration schemes, characterized yet by the trajectory size (Np) (aging effect). In this paper we provide an analytical approach considering the modified stochastic version where the parameter T plays the role of a maximum hopping distance. This modification allows us to obtain a general analytical expression for the crossover, as a function of the parameters μ, T, and Np. Differently from what has been proposed by previous studies, we find that the crossover occurs in any dimension d. These results have been validated by numerical experiments and may be of great value for fixing optimal parameters in search algorithms. © 2013 American Physical Society.

Simulação computacional de materiais com elétrons fortemente interagentes: DMRG aplicado a super-redes Hubbard com modulação de condução entre camadas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Modelo estatístico de rede de resistores para o estudo de processos de condução em nanocompósitos poliméricos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da correlação entre propriedades não-ôhmicas, processos de relaxação dielétrica e microestrutura de cerâmicas policristalinas do tipo (Ca IND. 1/4 Cu IND. 3/4)TiO IND. 3

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Proposta de uma abordagem de análise para a implantação de plataformas logísticas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)