Changes in nitrogen and phosphorus and their effects on phytoplankton in the Bohai Sea

Systematic studies of the changes in dissolved inorganic nitrogen (DIN) and dissolved inorganic phosphorus (DIP) and their effects on phytoplankton over the last 30 years in the Bohai Sea are presented. The amount of sewage disposal, use of fertilizer and the Huanghe River runoff were found to have a significant influence on the DIN or DIP concentrations in the Bohai Sea over the last 30 years. Moreover, the changes in DIN and DIP resulted in changes in the limiting nutrients of phytoplankton in the Bohai Sea from nitrogen in the early 1980s to nitrogen-phosphorus in the late 1980s, and then to phosphorus after the 1990s. In addition, changes in nitrogen and phosphorus had a significant effect on the phytoplankton community structure. The half saturation constant (K (s)) was used to evaluate the effect of nutrients on the phytoplankton community structure in the Bohai Sea over the last 30 years. Cell abundance percentages of dominant phytoplankton species with high K (s) values for phosphorus and low K (s) values for nitrogen have decreased since the 1980s, while those of dominant phytoplankton species with low K (s) values for phosphorus and high K (s) values for nitrogen increased during this period.

大兴安岭北段晚中生代火山岩地球化学特征及其地质意义

This thesis mainly concentrates on the geochronology, prtrology, elemental geochemistry and Sr-Nd-Pb-Hf isotopic geochemistry of the volcanic rocks in north Da’Hinggan Mountain. By analyzing the data obtained in this study and data from other people, this thesis explored the age distribution, petrology and mineralogy and geochemistry characteristics of the volcanic rocks in north Da’Hinggan Mountain. Furthermore, this thesis speculated upon the source characteristics of these volcanic rocks and their implications for the tectonic evolution and crust accretion. According to the twenty Ar-Ar ages, four zircon U-Pb SHRIMP ages and two Zircon U-Pb LA-ICP-MS ages, the duration of the eruption of the Late Mesozoic volcanic rocks in north Da’Hing Mountain was about 160Ma-106Ma. Most of these volcanic rocks belong to early Cretaceous and the late Jurassic volcanic rocks are only restricted in Manzhouli. The bulk of the late Mesozoic volcanic rocks are high-K calc-alkaline rocks. Only a small portion of these volcanic rocks are shoshonites. These rocks are mainly intermediate or acid and the basic rocks usually have higher alkaline contents. Rock types are very complex in this region. These volcanic rocks have a large TiO2 variation and the Al2O3 and alkaline contents are high. From the point of mineralogy, the plagioclases in these volcanic rocks are oligoclases, andesines and labradorites, and the labradorites are more common. Most pyroxenes in these volcanic rocks are augites which belong to clinopyroxene. The source of the Late Mesozoic volcanic rocks was an enriched lithospheric mantle. When the magma en route to the surface it was contaminated by crust material slightly and had some fractional crystallization. These rocks which mainly belong to high-K calc-alkaline series were one of the results of postorogenic tectonic-magmatic activities. The upwelling in late Mesozoic supplied heat to melt the enriched lithospheric mantle which was resulted from the subduction of paleo-Asian Ocean and/or Mengol-Okhotsk ocean. These late Mesozoic volcanic rocks are also important to the upper crustal accretion of north Da’Hinggan Mountain since the late Mesozoic. These volcanics and the contemporary emplacement of granites and the basaltic underplating in combination fulfilled the crust accretion history in north Da’Hinggan Mountain in Late Mesozoic.

晚中生代松辽盆地形成的大地构造环境及成因机制

Directed by the theory of "Collision Tectonic Facies", the tectonic setting and dynamic mechanism of the formation of Songliao basin in late Mesozoic (J_3-K_1) are studied in the present thesis with the methods of petrology, petrochemistry, geochemistry and isotopic geochronology. The research contents in this paper include as followings. Firstly, the general tectonic frame is made up of different tectonic facies formed from Mid-late Proterozoic to Mesozoic, which are Huabei plate, the Chengde-Siziwangqi melange (Pz_1), the Wenduermiao magmatic arc (Pz_1), the Hegenshan-Chaogenshan melange (Pz_2), the accretion arec (Pz_1-P), the Raohe-Hulin melange (Mz), the magmatic arc (Mz) and the pull-apart basin on the magmatic arc (Mz). Secondly, the volcanic rock assemblages of Songliao basin and its adjacent area in late Mesozoic is the typical calc-alkaline of the magmatic arc. The types of volcanic rocks in the study area include basalts, basaltic andesites, andesites, dacites and rhyolites, and basic-intermediate volcanic rocks have higher alkalinity. The volcanic rock series in this area is the high-K calc-alkaline series. Thirdly, the total REE of volcanic rocks in Songliao basin and its adjacent area is higher than that of the chondrite. The pattern of the REE normalized by the chondrite shows the characteristics similar to that of the typical island arcs or the active continental margins in the earth, that is enrichment of LREE and depletion of Eu. The spider-diagram of the trace element normalized by the primitive mantle also expresses the similar features to that of the typical island arcs or the active continental margins, it has distinctive valleies of Nb, Ta, Sr, P, and Ti, as well as the peaks of La, Ce, Th, U, and K. The incompatible elements show that the high field strength elements, such as Nb, Ta, Ti, and P, are depletion while the low field strength elements, such as K, U, Pb, and Ba, are enrichment. These features are similar to those of orogenic volcanic rocks and imply the formation of the volcanic rocks in this area is related to the subduction. The degrees of both the enrichment of the HFS elements and depletion of the LFS elements become more obvious from basic to acid volcanic rocks, which suggests crustal contamination enhances with the magmatic crystallization and fractionation. The concentration of the compatible elements is W-shape, and anomalies in Cr and Ni suggest there is the contamination during the magmatic crystallization and fractionation. Fourthly, the isotopic age data prove the volcanic activity in the Songliao basin and its adjacent area started in the early-middle Jurassic, and ended in the end of the early Cretaceous-the beginning of the Cretaceous. The volcanism summit was the late Jurassic-the early Cretaceous (100 - 150Ma). Finally, the tectonic setting of volcanism in the late Mesozoic was magmatic arc, which originated the subduction of Raohe-Hulin trench to the northwest Asian plate. The subduction began in the middle Jurassic, and the collision orogenesis between the Sikhote-Alin arc and Asian continent was completed in the end of the early Cretaceous-the beginning of the late Cretaceous. The results of above tectonic processes were finally to format Nadanhada orogenic belt symbolized by the Raohe-Hulin suture or melange belt. The violently oblique movement of the Izanagi plate toward Asian plate in the late Mesozoic was the dynamic mechanism of above tectonic processes. At the same tome, the left-lateral strike-slip shear caused by the oblique movement of the Izanagi plate produced a series of strike-slip faults in east Asian margin, and the large scale displacements of these strike-slip faults then produced the pull-apart basing or grabens on the magmatic arc. Conclusively, the tectonic setting during the formation of the grabens of Songliao basin in the late Mesozoic was magmatic arc, and its dynamic mechanism was the pull-apart. In a word, there was a good coupling relation among the oblique subduction of the oceanic plate, collisional orogene between island arc and continental plate, strike-slip shear of the faults and the formation of the grabens in Songliao basin and its adjacent area in late Mesozoic. These tectonic processes were completed in the unoin dynamic setting and mechanism as above description.

青藏高原东缘新生代富钾碱性岩的年龄与岩石地球化学特征

The Cenozoic high-Potassium alkaline magma rocks are widely distributed in the eastern margin of Qinghai-Xizang (Tibet) plateau, such as Mangkang, Deqin, Jianchuan, Haidong in the western Yunnan Province, Yanyuan, Muli in the western Sichuan province, including syenite, minette and trachyte and lamprophyres, which formaed a large alkaline-rich magmatic rock zone along the Jinshajiang-Ailaoshan fault. Here we present detailed Geochemical and Geochronology study for the Cenozoic high-K alkline magma rocks from Mangkang, Deqin, Jianchuan, Haidong and Muli, Yanyuan, Yanbian, Yaoan (western Yangtze craton). Rocks of our target area include syenite, minette and trachyte. Geochronologic dating and compilation of existing age data suggest magmatism occurred at 32-38Ma and distribute along the Jinsha suture, from Jinping, Daping, Zhenyuan to Haidong, Jianchuan, Deqin, Mangkang, Zaduo to Qiangtang Bandaohu, Zhentouya. They all share same geochemical features such as rich in potassium and alkaline, rich in LREE, slightly negative Eu anomalies, negative anomalies in Nb, Ta, Ti,. These indicate they come from EMU mantle. Geochronologic dating on western Yangtze craton minette surgest minette in Haidong, Yanyuan, Yanbian, Yaoan, Deqin ocurred at 30-37Ma, well minette in Muli ocurred at IMa. Need more detailed geology study to find differece of these two episode magmatism.

山东西部中生代碳酸岩和火山岩的地球化学特征及其成因研究

On account of some very peculiar features, such as extremely high Sr and Nd contents which can buffer their primary isotopic signatures against crustal contamination, deep-seated origin within mantle, and quick ascent in lithosphere, carbonatites are very suitable for deciphering the nature of sub-continental lithospheric mantle(SCLM) and receiving widespread attentions all around the world. The Mesozoic carbonatites located in western Shandong was comprehensively investigated in this dissertation. The extremely high REE concentrations, similar spider diagrams to most other carbonatites around the world and high Sr. low Mn contents of apatite from carbonatites confirm their igneous origin. The K depletion of carbonatites from this studies reflect the co-existing of carbonatite melts with pargasite+phlogopite lherzolite rather than phlogopite lherzolite. Geological characteristics and their occumng without associated silicate rocks argue against their origin of fractionation of or liquid immisibility with carbonated silicate melts. In contrast to the low S7Sr/86Sr and high l43Nd/l44Nd of other carbonatites in the world, carbonatites of this studies show EMU features with high S7Sr/86Sr and low l4jNd/144Nd ratios, which imply that this enriched nature was formed through metasomatism of enriched mantle preexisted beneath the Sino-korean craton by partial melts of subducted middle-lower crust of Yangtze craton. In addition to carbonatites, the coeval Mesozoic volcanic rocks from western Shandong were also studied in this dissertation. Mengyin and Pingyi volcanic rocks, which located in the south parts of western Shandong are shoshonite geochemically. while volcanic rocks cropped out in other places are high-K calc-alkaline series. All these volcanic rocks enriched in LREE and LILE. depleted in HFSE, and show TNT(strong negative anomalies in Ta, Nb. Ti) patterns in spider diagrams which are common phenomena in arc-related volcanic rocks. The Sr-Nd-Pb isotopic systematics reveal that the volcanic rocks decrease gradually in 87Sr/86Sr, 206Pb/204Pb, 20SPb/204Pb and increase in TDM from south to north, suggesting the distinction of SCLM beneath Shandong in Mesozoic is more explicit in south-north trending than in east-west trending. The variable features of SCLM can be attributed to the subduction of Yangtze craton beneath Sino-Korean craton, and subsequent metasomatism of SCLM by partial melts of Yangtze lower crust in different extent.

鲁西临朐地区中生代铁寨杂岩体的岩石化学与地球化学特征及其成因研究

The Tiezhai intrusive complex is located in the north of the Luxi block, Shandong province, eastern China. It lies ～30 km west of the Tanlu fault, and is at the cross of the Wujing and Jiushan faults. The Tiezhai complex was formed about 120～130 Ma, when large-scale magmatism was active in eastern part of North China. This paper carries out petrochemical and geochemical study on the Tiezhai intrusive complex, and discusses its genesis in detail. The Tiezhai intrusive complex can be subdivided into three rock series. The first is the gabbro-diorite series formed in early stage. Its composition variation shows 01 and Cpx fractional crystallization trend. The second is the porphyritic diorite and monzonite series, showing dominating Hb fractional differentiation. Their composition variation shows Hb fractional crystallization trend. The third is the porphyritic quartz monzonite with K-feldspar megacrysts, showing weakly Hb and Bi fractional crystallization trend. All types of rocks in the Tiezhai complex are belonging to the high-K cac-alkaline series. They have elevated Sr (450-1660 ppm), Ba (210-1780 ppm) and relatively low Rb (30-100 ppm). For the gabbro-dioritic rocks in the early stage, the abundances of Ni (20-250 ppm), Cr (50-350 ppm), V(l30-250 ppm) and Co (20-40 ppm) are high, indicating a mantle origin. All rocks have negative anormalies of Nb, Ta, Ti and P, and enriched LREE and strong differentiated REE patterns. The porphyritic monzonites and quartz monzonites have very low HREE, Yb and Y contents and positive Eu anormalies, similar to adakite. Most rocks have lowε_(Nd)(t) of-1.5～-10.9, and high (~(87)Sr/~(86)Sr)_i of 0.704～0.709. The data have characters of enriched lithosphere mantle (EMI). In summary, the Tiezhai intrusive complex was inferred to be generated by a mantle derived magma through fractional crystallization. When the primary magma gathered in some place between crust and mantle, the crystallization started and causing magma evolution. The remaining / evolved magma ascended and emplaced again and again in the upper crust in Tiezhai area. Then Tiezhai complex formed. The porphyritic monzonites and quartz monzonites have major and trace element characters of typical adakite, but they are likely to be generated by Hb fractional crystallization.

A study of silicon and germanium junctionless transistors

Technology boosters, such as strain, HKMG and FinFET, have been introduced into semiconductor industry to extend Moore’s law beyond 130 nm technology nodes. New device structures and channel materials are highly demanded to keep performance enhancement when the device scales beyond 22 nm. In this work, the properties and feasibility of the proposed Junctionless transistor (JNT) have been evaluated for both Silicon and Germanium channels. The performance of Silicon JNTs with 22 nm gate length have been characterized at elevated temperature and stressed conditions. Furthermore, steep Subthreshold Slopes (SS) in JNT and IM devices are compared. It is observed that the floating body in JNT is relatively dynamic comparing with that in IM devices and proper design of the device structure may further reduce the VD for a sub- 60 mV/dec subthreshold slope. Diode configuration of the JNT has also been evaluated, which demonstrates the first diode without junctions. In order to extend JNT structure into the high mobility material Germanium (Ge), a full process has been develop for Ge JNT. Germanium-on-Insulator (GeOI) wafers were fabricated using Smart-Cut with low temperature direct wafer bonding method. Regarding the lithography and pattern transfer, a top-down process of sub-50-nm width Ge nanowires is developed in this chapter and Ge nanowires with 35 nm width and 50 nm depth are obtained. The oxidation behaviour of Ge by RTO has been investigated and high-k passivation scheme using thermally grown GeO2 has been developed. With all developed modules, JNT with Ge channels have been fabricated by the CMOScompatible top-down process. The transistors exhibit the lowest subthreshold slope to date for Ge JNT. The devices with a gate length of 3 μm exhibit a SS of 216 mV/dec with an ION/IOFF current ratio of 1.2×103 at VD = -1 V and DIBL of 87 mV/V.

First principles modelling of nucleation and growth during atomic layer deposition onto III-V substrates

Atomic layer deposition (ALD) is now used in semiconductor fabrication lines to deposit nanometre-thin oxide films, and has thus enabled the introduction of high-permittivity dielectrics into the CMOS gate stack. With interest increasing in transistors based on high mobility substrates, such as GaAs, we are investigating the surface treatments that may improve the interface characteristics. We focus on incubation periods of ALD processes on III-V substrates. We have applied first principles Density Functional Theory (DFT) to investigate detailed chemistry of these early stages of growth, specifically substrate and ALD precursor interaction. We have modelled the ‘clean-up’ effect by which organometallic precursors: trimethylaluminium (TMA) or hafnium and titanium amides clean arsenic oxides off the GaAs surface before ALD growth of dielectric commences and similar effect on Si3N4 substrate. Our simulations show that ‘clean-up’ of an oxide film strongly depends on precursor ligand, its affinity to the oxide and the redox character of the oxide. The predominant pathway for a metalloid oxide such as arsenic oxide is reduction, producing volatile molecules or gettering oxygen from less reducible oxides. An alternative pathway is non-redox ligand exchange, which allows non-reducible oxides (e.g. SiO2) to be cleaned-up. First principles study shows also that alkylamides are more susceptible to decomposition rather than migration on the oxide surface. This improved understanding of the chemical principles underlying ‘clean-up’ allows us to rationalize and predict which precursors will perform the reaction. The comparison is made between selection of metal chlorides, methyls and alkylamides precursors.

Multi-scale modelling of atomic layer deposition

High-permittivity ("high-k") dielectric materials are used in the transistor gate stack in integrated circuits. As the thickness of silicon oxide dielectric reduces below 2 nm with continued downscaling, the leakage current because of tunnelling increases, leading to high power consumption and reduced device reliability. Hence, research concentrates on finding materials with high dielectric constant that can be easily integrated into a manufacturing process and show the desired properties as a thin film. Atomic layer deposition (ALD) is used practically to deposit high-k materials like HfO2, ZrO2, and Al2O3 as gate oxides. ALD is a technique for producing conformal layers of material with nanometer-scale thickness, used commercially in non-planar electronics and increasingly in other areas of science and technology. ALD is a type of chemical vapor deposition that depends on self-limiting surface chemistry. In ALD, gaseous precursors are allowed individually into the reactor chamber in alternating pulses. Between each pulse, inert gas is admitted to prevent gas phase reactions. This thesis provides a profound understanding of the ALD of oxides such as HfO2, showing how the chemistry affects the properties of the deposited film. Using multi-scale modelling of ALD, the kinetics of reactions at the growing surface is connected to experimental data. In this thesis, we use density functional theory (DFT) method to simulate more realistic models for the growth of HfO2 from Hf(N(CH3)2)4/H2O and HfCl4/H2O and for Al2O3 from Al(CH3)3/H2O.Three major breakthroughs are discovered. First, a new reaction pathway, ’multiple proton diffusion’, is proposed for the growth of HfO2 from Hf(N(CH3)2)4/H2O.1 As a second major breakthrough, a ’cooperative’ action between adsorbed precursors is shown to play an important role in ALD. By this we mean that previously-inert fragments can become reactive once sufficient molecules adsorb in their neighbourhood during either precursor pulse. As a third breakthrough, the ALD of HfO2 from Hf(N(CH3)2)4 and H2O is implemented for the first time into 3D on-lattice kinetic Monte-Carlo (KMC).2 In this integrated approach (DFT+KMC), retaining the accuracy of the atomistic model in the higher-scale model leads to remarkable breakthroughs in our understanding. The resulting atomistic model allows direct comparison with experimental techniques such as X-ray photoelectron spectroscopy and quartz crystal microbalance.

Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs

This PhD covers the development of planar inversion-mode and junctionless Al2O3/In0.53Ga0.47As metal-oxidesemiconductor field-effect transistors (MOSFETs). An implant activation anneal was developed for the formation of the source and drain (S/D) of the inversionmode MOSFET. Fabricated inversion-mode devices were used as test vehicles to investigate the impact of forming gas annealing (FGA) on device performance. Following FGA, the devices exhibited a subthreshold swing (SS) of 150mV/dec., an ION/IOFF of 104 and the transconductance, drive current and peak effective mobility increased by 29%, 25% and 15%, respectively. An alternative technique, based on the fitting of the measured full-gate capacitance vs gate voltage using a selfconsistent Poisson-Schrödinger solver, was developed to extract the trap energy profile across the full In0.53Ga0.47As bandgap and beyond. A multi-frequency inversion-charge pumping approach was proposed to (1) study the traps located at energy levels aligned with the In0.53Ga0.47As conduction band and (2) separate the trapped charge and mobile charge contributions. The analysis revealed an effective mobility (μeff) peaking at ~2850cm2/V.s for an inversion-charge density (Ninv) = 7*1011cm2 and rapidly decreasing to ~600cm2/V.s for Ninv = 1*1013 cm2, consistent with a μeff limited by surface roughness scattering. Atomic force microscopy measurements confirmed a large surface roughness of 1.95±0.28nm on the In0.53Ga0.47As channel caused by the S/D activation anneal. In order to circumvent the issue relative to S/D formation, a junctionless In0.53Ga0.47As device was developed. A digital etch was used to thin the In0.53Ga0.47As channel and investigate the impact of channel thickness (tInGaAs) on device performance. Scaling of the SS with tInGaAs was observed for tInGaAs going from 24 to 16nm, yielding a SS of 115mV/dec. for tInGaAs = 16nm. Flat-band μeff values of 2130 and 1975cm2/V.s were extracted on devices with tInGaAs of 24 and 20nm, respectively

Germanium MOS Capacitors with Hafnium Dioxide and Silicon Dioxide Dielectrics

Germanium (Ge) does not grow a suitable oxide for MOS devices. The Ge/dielectric interface is of prime importance to the operation of photo-detectors and scaled MOSTs. Therefore there is a requirement for deposited or bonded dielectric materials. MOS capacitors have been formed on germanium substrates with three different dielectric materials. Firstly, a thermally grown and bonded silicon dioxide (SiO2) layer, secondly, SiO2 deposited by atmospheric pressure CVD ‘silox’, and thirdly a hafnium oxide (HfO2) high-k dielectric deposited by atomic layer deposition (ALD). Ge wafers used were p-type 1 0 0 2 O cm. C–V measurements have been made on all three types of capacitors to assess the interface quality. ALD HfO2 and silox both display acceptable C–V characteristics. Threshold voltage and maximum and minimum capacitance values closely match expected values found through calculation. However, the bonded SiO2 has non-ideal C–V characteristics, revealing the presence of a high density of interface states. A H2/N2 post metal anneal has a detrimental effect on C–V characteristics of HfO2 and silox dielectrics, causing a shift in the threshold voltage and rise in the minimum capacitance value. In the case of hafnium dioxide, capacitor properties can be improved by performing a plasma nitridation of the Ge surface prior to dielectric deposition.

Isolation and preliminary biological assessment of AADGAPLIRFamide and SVPGVLRFamide from Caenorhabditis elegans

To date, 9 FMRFamide-related peptides (FaRPs) have been structurally characterised from Caenorhabditis elegans. Radioimmunometrical screening of an ethanolic extract of C. elegans revealed the presence of two additional FaRPs that were purified by reverse-phase HPLC and subjected to Edman degradation analysis and gas-phase sequencing. Unequivocal primary structures for the two FaRPs were determined as Ala-Ala-Asp-Gly-Ala-Pro-Leu-Ile-Arg-Phe-NH2 and Ser-Val-Pro-Gly-Val-Leu-Arg-Phe-NH2. Using MALDI-TOF mass. spectrometry, the molecular masses of the peptides were found to be 1032 Da (MH) and 875 Da (MH)(+), respectively. Two copies of AADGAPLIRFamide are predicted to be encoded on the precursor gene termed flp-13, while one copy of SVPGVLRFamide is located on flp-18. Synthetic replicates of the peptides were tested on Ascaris suum somatic muscle to assess bioactivity. ADDGAPLIRFamide had inhibitory effects on A. suum muscle strips, which occurred over a range of concentrations from a threshold for activity of 10 nM to 10 muM. SVPGVLRFamide was excitatory on A. suum somatic musculature from a threshold concentration for activity of 1 nM to 10 muM. The inhibitory and excitatory effects of AADGAPLIRFamide and SVPGVLRFamide, respectively, were the same for dorsal and ventral muscle strips as well as innervated and denervated preparations, suggesting that these physiological effects are not nerve cord dependent. Addition of ADDGAPLIRFamide (10 muM) to muscle strips preincubated in high-K+ and -Ca2+-free medium resulted in a normal inhibitory response. Peptide addition to muscle strips preincubated in Cl--free medium showed no inhibitory response, suggesting that the inhibitory response of the peptide may be chloride mediated. A normal excitatory response was noted following the addition of 10 muM SVPGVLRFamide to muscle strips preincubated in high-K+, Ca2+- and Cl--free media. (C) 2001 Academic Press.

Characterization of a picosecond laser generated 4.5 keV TiK-alpha source for pulsed radiography

K alpha radiation generated by interaction of an ultrashort (1 ps) laser with thin (25 mu m) Ti foils at high intensity (2x10(16) W/cm(2)) is analyzed using data from a spherical Bragg crystal imager and a single hit charge-coupled device spectrometer together with Monte Carlo simulations of K alpha brightness. Laser to K alpha and electron conversion efficiencies have been determined. We have also measured an effective crystal reflectivity of 3.75 +/- 2%. Comparison of imager data with data from the relatively broadband single hit spectrometer has revealed a reduction in crystal collection efficiency for high K alpha yield. This is attributed to a shift in the K-shell spectrum due to Ti ionization. (c) 2005 American Institute of Physics.

Physiological effects of platyhelminth RFamide peptides on muscle-strip preparations of Fasciola hepatica (Trematoda: Digenea)

The effects of each of the known platyhelminth neuropeptides were determined on muscle-strip preparations from the liver fluke, Fasciola hepatica. The activity of synthetic replicates of the C-terminal nonapeptide of neuropeptide F (NPF9, Moniezia expansa), and the FMRFamide-related peptides (FaRPs), GNFFRFamide, RYIRFamide, GYIRFamide and YIRFamide, were examined. Muscle-strip activity was recorded from 1 mm segments of muscle prepared from 28 to 32-day-old worms, using a photo-optic transducer system. None of the peptides (less than or equal to 10 mu M) altered baseline tension significantly; however, each of the peptides increased the amplitude and frequency of muscle contraction. The threshold for activity of each of the peptides examined was, respectively, 1 nM (RYIRFamide), 0.3 mu M (GYIRFamide and YIRFamide), and 10 mu M (GNFFRFamide and NPF9). All of the effects were reversible and repeatable, following wash-out. Muscle-strip integrity was tested following experimentation, using arecoline (10 mu M) and high-K+ bathing medium (90 mM K+).

Early Holocene M similar to 6 explosive eruption from Plosky volcanic massif (Kamchatka) and its tephra as a link between terrestrial and marine paleoenvironmental records

We report tephrochronological and geochemical data on early Holocene activity from Plosky volcanic massif in the Kliuchevskoi volcanic group, Kamchatka Peninsula. Explosive activity of this volcano lasted for similar to 1.5 kyr, produced a series of widely dispersed tephra layers, and was followed by profuse low-viscosity lava flows. This eruptive episode started a major reorganization of the volcanic structures in the western part of the Kliuchevskoi volcanic group. An explosive eruption from Plosky (M similar to 6), previously unstudied, produced tephra (coded PL2) of a volume of 10-12 km(3) (11-13 Gt), being one of the largest Holocene explosive eruptions in Kamchatka. Characteristic diagnostic features of the PL2 tephra are predominantly vitric sponge-shaped fragments with rare phenocrysts and microlites of plagioclase, olivine and pyroxenes, medium- to high-K basaltic andesitic bulk composition, high-K, high-Al and high-P trachyandesitic glass composition with SiO2 = 57.5-59.5 wt%, K2O = 2.3-2.7 wt%, Al2O3 = 15.8-16.5 wt%, and P2O5 = 0.5-0.7 wt%. Other diagnostic features include a typical subduction-related pattern of incompatible elements, high concentrations of all REE (> 10x mantle values), moderate enrichment in LREE (La/Yb similar to 5.3), and non-fractionated mantle-like pattern of LILE. Geochemical fingerprinting of the PL2 tephra with the help of EMP and LA-ICP-MS analyses allowed us to map its occurrence in terrestrial sections across Kamchatka and to identify this layer in Bering Sea sediment cores at a distance of > 600 km from the source. New high-precision C-14 dates suggest that the PL2 eruption occurred similar to 10,200 cal BP, which makes it a valuable isochrone for early Holocene climate fluctuations and permits direct links between terrestrial and marine paleoenvironmental records. The terrestrial and marine C-14 dates related to the PL2 tephra have allowed us to estimate an early Holocene reservoir age for the western Bering Sea at 1,410 +/- A 64 C-14 years. Another important tephra from the early Holocene eruptive episode of Plosky volcano, coded PL1, was dated at 11,650 cal BP. This marker is the oldest geochemically characterized and dated tephra marker layer in Kamchatka to date and is an important local marker for the Younger Dryas-early Holocene transition. One more tephra from Plosky, coded PL3, can be used as a marker northeast of the source at a distance of similar to 110 km.