Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

Organic heterostructure approach for multifunctional light-emitting field-effect transistors

The possibility of combining different functionalities in a single device is of great relevance for further development of organic electronics in integrated components and circuitry. Organic light-emitting transistors (OLETs) have been demonstrated to be able to combine in a single device the electrical switching functionality of a field-effect transistor and the capability of light generation. A novel strategy in OLET realization is the tri-layer vertical hetero-junction. This configuration is similar to the bi-layer except for the presence of a new middle layer between the two transport layers. This “recombination” layer presents high emission quantum efficiency and OLED-like (Organic Light-Emitting Diode) vertical bulk mobility value. The key idea of the vertical tri-layer hetero-junction approach in realizing OLETs is that each layer has to be optimized according to its specific function (charge transport, energy transfer, radiative exciton recombination). Clearly, matching the overall device characteristics with the functional properties of the single materials composing the active region of the OFET, is a great challenge that requires a deep investigation of the morphological, optical and electrical features of the system. As in the case of the bi-layer based OLETs, it is clear that the interfaces between the dielectric and the bottom transport layer and between the recombination and the top transport layer are crucial for guaranteeing good ambipolar field-effect electrical characteristics. Moreover interfaces between the bottom transport and the recombination layer and between the recombination and the top transport layer should provide the favourable conditions for the charge percolation to happen in the recombination layer and form excitons. Organic light emitting transistor based on the tri-layer approach with external quantum efficiency out-performing the OLED state of the art has been recently demonstrated [Capelli et al., Nat. Mater. 9 (2010) 496-503] widening the scientific and technological interest in this field of research.

Immobilizing bacteriorhodopsin on a single electron transistor

As awareness of potential human and environmental impacts from toxins has increased, so has the development of innovative sensors. Bacteriorhodopsin (bR) is a light activated proton pump contained in the purple membrane (PM) of the bacteria Halobacterium salinarum. Bacteriorhodopsin is a robust protein which can function in both wet and dry states and can withstand extreme environmental conditions. A single electron transistor(SET) is a nano-scale device that exploits the quantum mechanical properties of electrons to switch on and off. SETs have tremendous potential in practical applications due to their size, ultra low power requirements, and electrometer-like sensitivity. The main goal of this research was to create a bionanohybrid device by integrating bR with a SET device. This was achieved by a multidisciplinary approach. The SET devices were created by a combination of sputtering, photolithography, and focused ion beam machining. The bionanomaterial bacteriorhodopsin was created through oxidative fermentation and a series of transmembrane purification processes. The bR was then integrated with the SET by electrophoretic deposition, creating a bionanohybrid device. The bionanohybrid device was then characterized using a semiconductor parametric analyzer. Characterization demonstrated that the bR modulated the operational characteristics of the SET when bR was activated with light within its absorbance spectrum. To effectively integrate bacteriorhodopsin with microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS), it is critical to know the electrical properties of the material and to understand how it will affect the functionality of the device. Tests were performed on dried films of bR to determine if there is a relationship between inductance, capacitance, and resistance (LCR) measurements and orientation, light-on/off, frequency, and time. The results indicated that the LCR measurements of the bR depended on the thickness and area of the film, but not on the orientation, as with other biological materials such as muscle. However, there was a transient LCR response for both oriented and unoriented bR which depended on light intensity. From the impedance measurements an empirical model was suggested for the bionanohybrid device. The empirical model is based on the dominant electrical characteristics of the bR which were the parallel capacitance and resistance. The empirical model suggests that it is possible to integrate bR with a SET without influencing its functional characteristics.

Functional Characterization and Comparison of Intercellular Communication in Stem Cell-Derived Cardiomyocytes

One novel treatment strategy for the diseased heart focuses on the use of pluripotent stem cell-derived cardiomyocytes (SC-CMs) to overcome the heart's innate deficiency for self-repair. However, targeted application of SC-CMs requires in-depth characterization of their true cardiogenic potential in terms of excitability and intercellular coupling at cellular level and in multicellular preparations. In this study, we elucidated the electrical characteristics of single SC-CMs and intercellular coupling quality of cell pairs, and concomitantly compared them with well-characterized murine native neonatal and immortalized HL-1 cardiomyocytes. Firstly, we investigated the electrical properties and Ca2+ signaling mechanisms specific to cardiac contraction in single SC-CMs. Despite heterogeneity of the new cardiac cell population, their electrophysiological activity and Ca2+ handling were similar to native cells. Secondly, we investigated the capability of paired SC-CMs to form an adequate subunit of a functional syncytium and analyzed gap junctions and signal transmission by dye transfer in cell pairs. We discovered significantly diminished coupling in SC-CMs compared with native cells, which could not be enhanced by a coculture approach combining SC-CMs and primary CMs. Moreover, quantitative and structural analysis of gap junctions presented significantly reduced connexin expression levels compared with native CMs. Strong dependence of intercellular coupling on gap junction density was further confirmed by computational simulations. These novel findings demonstrate that despite the cardiogenic electrophysiological profile, SC-CMs present significant limitations in intercellular communication. Inadequate coupling may severely impair functional integration and signal transmission, which needs to be carefully considered for the prospective use of SC-CMs in cardiac repair.

Room temperature photoluminescence of InGaAs Surface Quantum Dots

Self-assembled InGaAs quantum dots show unique physical properties such as three dimensional confinement, high size homogeneity, high density and low number of dislocations. They have been extensively used in the active regions of laser devices for optical communications applications [1]. Therefore, buried quantum dots (BQDs) embedded in wider band gap materials have been normally studied. The wave confinement in all directions and the stress field around the dot affect both optical and electrical properties [2, 3]. However, surface quantum dots (SQDs) are less affected by stress, although their optical and electrical characteristics have a strong dependence on surface fluctuation. Thus, they can play an important role in sensor applications

Impact of N2 plasma power and duration on AlGaN/GaN HEMT

urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.

Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras

Esta memoria está basada en el crecimiento y caracterización de heteroestructuras Al(Ga)N/GaN y nanocolumnas ordenadas de GaN, y su aplicación en sensores químicos. El método de crecimiento ha sido la epitaxia de haces moleculares asistida por plasma (PAMBE). En el caso de las heteroestructuras Al(Ga)N/GaN, se han crecido barreras de distinto espesor y composición, desde AlN de 5 nm, hasta AlGaN de 35 nm. Además de una caracterización morfológica, estructural y eléctrica básica de las capas, también se han fabricado a partir de ellas dispositivos tipo HEMTs. La caracterización eléctrica de dichos dispositivos (carga y movilidad de en el canal bidimensional) indica que las mejores heteroestructuras son aquellas con un espesor de barrera intermedio (alrededor de 20 nm). Sin embargo, un objetivo importante de esta Tesis ha sido verificar las ventajas que podían tener los sensores basados en heteroestructuras AlN/GaN (frente a los típicos basados en AlGaN/GaN), con espesores de barrera muy finos (alrededor de 5 nm), ya que el canal de conducción que se modula por efecto de cambios químicos está más cerca de la superficie en donde ocurren dichos cambios químicos. De esta manera, se han utilizado los dispositivos tipo HEMTs como sensores químicos de pH (ISFETs), y se ha comprobado la mayor sensibilidad (variación de corriente frente a cambios de pH, Ids/pH) en los sensores basados en AlN/GaN frente a los basados en AlGaN/GaN. La mayor sensibilidad es incluso más patente en aplicaciones en las que no se utiliza un electrodo de referencia. Se han fabricado y caracterizado dispositivos ISFET similares utilizando capas compactas de InN. Estos sensores presentan peor estabilidad que los basados en Al(Ga)N/GaN, aunque la sensibilidad superficial al pH era la misma (Vgs/pH), y su sensibilidad en terminos de corriente de canal (Ids/pH) arroja valores intermedios entre los ISFET basados en AlN/GaN y los valores de los basados en AlGaN/GaN. Para continuar con la comparación entre dispositivos basados en Al(Ga)N/GaN, se fabricaron ISFETs con el área sensible más pequeña (35 x 35 m2), de tamaño similar a los dispositivos destinados a las medidas de actividad celular. Sometiendo los dispositivos a pulsos de voltaje en su área sensible, la respuesta de los dispositivos de AlN presentaron menor ruido que los basados en AlGaN. El ruido en la corriente para dispositivos de AlN, donde el encapsulado no ha sido optimizado, fue tan bajo como 8.9 nA (valor rms), y el ruido equivalente en el potencial superficial 38.7 V. Estos valores son más bajos que los encontrados en los dispositivos típicos para la detección de actividad celular (basados en Si), y del orden de los mejores resultados encontrados en la literatura sobre AlGaN/GaN. Desde el punto de vista de la caracterización electro-química de las superficies de GaN e InN, se ha determinado su punto isoeléctrico. Dicho valor no había sido reportado en la literatura hasta el momento. El valor, determinado por medidas de “streaming potential”, es de 4.4 y 4 respectivamente. Este valor es una importante característica a tener en cuenta en sensores, en inmovilización electrostática o en la litografía coloidal. Esta última técnica se discute en esta memoria, y se aplica en el último bloque de investigación de esta Tesis (i.e. crecimiento ordenado). El último apartado de resultados experimentales de esta Tesis analiza el crecimiento selectivo de nanocolumnas ordenadas de GaN por MBE, utilizando mascaras de Ti con nanoagujeros. Se ha estudiado como los distintos parámetros de crecimiento (i.e. flujos de los elementos Ga y N, temperatura de crecimiento y diseño de la máscara) afectan a la selectividad y a la morfología de las nanocolumnas. Se ha conseguido con éxito el crecimiento selectivo sobre pseudosustratos de GaN con distinta orientación cristalina o polaridad; templates de GaN(0001)/zafiro, GaN(0001)/AlN/Si, GaN(000-1)/Si y GaN(11-20)/zafiro. Se ha verificado experimentalmente la alta calidad cristalina de las nanocolumnas ordenadas, y su mayor estabilidad térmica comparada con las capas compactas del mismo material. Las nanocolumnas ordenadas de nitruros del grupo III tienen una clara aplicación en el campo de la optoelectrónica, principalmente para nanoemisores de luz blanca. Sin embargo, en esta Tesis se proponen como alternativa a la utilización de capas compactas o nanocolumnas auto-ensambladas en sensores. Las nanocolumnas auto-ensambladas de GaN, debido a su alta razón superficie/volumen, son muy prometedoras en el campo de los sensores, pero su amplia dispersión en dimensiones (altura y diámetro) supone un problema para el procesado y funcionamiento de dispositivos reales. En ese aspecto, las nanocolumnas ordenadas son más robustas y homogéneas, manteniendo una alta relación superficie/volumen. Como primer experimento en el ámbito de los sensores, se ha estudiado como se ve afectada la emisión de fotoluminiscencia de las NCs ordenadas al estar expuestas al aire o al vacio. Se observa una fuerte caída en la intensidad de la fotoluminiscencia cuando las nanocolumnas están expuestas al aire (probablemente por la foto-adsorción de oxigeno en la superficie), como ya había sido documentado anteriormente en nanocolumnas auto-ensambladas. Este experimento abre el camino para futuros sensores basados en nanocolumnas ordenadas. Abstract This manuscript deals with the growth and characterization of Al(Ga)N/GaN heterostructures and GaN ordered nanocolumns, and their application in chemical sensors. The growth technique has been the plasma-assisted molecular beam epitaxy (PAMBE). In the case of Al(Ga)N/GaN heterostructures, barriers of different thickness and composition, from AlN (5 nm) to AlGaN (35 nm) have been grown. Besides the basic morphological, structural and electrical characterization of the layers, HEMT devices have been fabricated based on these layers. The best electrical characteristics (larger carriers concentration and mobility in the two dimensional electron gas) are those in AlGaN/GaN heterostructures with a medium thickness (around 20 nm). However, one of the goals of this Thesis has been to verify the advantages that sensors based on AlN/GaN (thickness around 7 nm) have compared to standard AlGaN/GaN, because the conduction channel to be modulated by chemical changes is closer to the sensitive area. In this way, HEMT devices have been used as chemical pH sensors (ISFETs), and the higher sensitivity (conductance change related to pH changes, Ids/pH) of AlN/GaN based sensors has been proved. The higher sensibility is even more obvious in application without reference electrode. Similar ISFETs devices have been fabricated based on InN compact layers. These devices show a poor stability, but its surface sensitivity to pH (Vgs/pH) and its sensibility (Ids/pH) yield values between the corresponding ones of AlN/GaN and AlGaN/GaN heterostructures. In order to a further comparison between Al(Ga)N/GaN based devices, ISFETs with smaller sensitive area (35 x 35 m2), similar to the ones used in cellular activity record, were fabricated and characterized. When the devices are subjected to a voltage pulse through the sensitive area, the response of AlN based devices shows lower noise than the ones based on AlGaN. The noise in the current of such a AlN based device, where the encapsulation has not been optimized, is as low as 8.9 nA (rms value), and the equivalent noise to the surface potential is 38.7 V. These values are lower than the found in typical devices used for cellular activity recording (based on Si), and in the range of the best published results on AlGaN/GaN. From the point of view of the electrochemical characterization of GaN and InN surfaces, their isoelectric point has been experimentally determined. Such a value is the first time reported for GaN and InN surfaces. These values are determined by “streaming potential”, being pH 4.4 and 4, respectively. Isoelectric point value is an important characteristic in sensors, electrostatic immobilization or in colloidal lithography. In particular, colloidal lithography has been optimized in this Thesis for GaN surfaces, and applied in the last part of experimental results (i.e. ordered growth). The last block of this Thesis is focused on the selective area growth of GaN nanocolumns by MBE, using Ti masks decorated with nanoholes. The effect of the different growth parameters (Ga and N fluxes, growth temperature and mask design) is studied, in particular their impact in the selectivity and in the morphology of the nanocolumns. Selective area growth has been successful performed on GaN templates with different orientation or polarity; GaN(0001)/sapphire, GaN(0001)/AlN/Si, GaN(000- 1)/Si and GaN(11-20)/sapphire. Ordered nanocolumns exhibit a high crystal quality, and a higher thermal stability (lower thermal decomposition) than the compact layers of the same material. Ordered nanocolumns based on III nitrides have a clear application in optoelectronics, mainly for white light nanoemitters. However, this Thesis proposes them as an alternative to compact layers and self-assembled nanocolumns in sensor applications. Self-assembled GaN nanocolumns are very appealing for sensor applications, due to their large surface/volume ratio. However, their large dispersion in heights and diameters are a problem in terms of processing and operation of real devices. In this aspect, ordered nanocolumns are more robust and homogeneous, keeping the large surface/volume ratio. As first experimental evidence of their sensor capabilities, ordered nanocolumns have been studied regarding their photoluminiscence on air and vacuum ambient. A big drop in the intensity is observed when the nanocolumns are exposed to air (probably because of the oxygen photo-adsortion), as was already reported in the case of self-assembled nanocolumns. This opens the way to future sensors based on ordered III nitrides nanocolumns.

Caracterización e instrumentación de sensores de ultrasonidos

El propósito de este proyecto de �fin de carrera es la caracterización e instrumentación de un sensor de ultrasonidos modelado por el tutor de este proyecto: Don César Briso Rodrí��guez. Una vez realizado el modelado de dicho sensor, simulando tanto sus caracter�í�sticas f�í�sicas, como sus caracterí��sticas eléctricas, se procede a la intrumentación y uso del mismo. La parte de intrumentaci�ón incluye tanto la electrónica que ser��á necesaria para la excitación del piezoeléctrico, en el modo de emisi�ón, como para la recepción de los pulsos el�éctricos generados por el sensor, como respuesta a los ecos recibidos, y su adecuación a niveles de señal correctos para la adquisici�ón, en el modo de escucha. Tras la adecuaci�ón de las señales para la adquisici�ón, éstas ser�án digitalizadas, tratadas y representadas por pantalla en un PC, a trav�es de una tarjeta de adquisición de datos por puerto USB encargada del muestreo de las señales de respuesta ya tratadas y su posterior enví��o al software de control y representaci�ón desarrollado en este proyecto. El entorno de usuario, el software de control de la tarjeta de adquisición y el software de tratamiento y representaci�ón se ha desarrollado con Visual Basic 2008 y las utilidades gr�áfi�cas de las librer��ías OpenGL. ABSTRACT The purpose of this project is to limit the characterization and implementation of an ultrasonic sensor modeled by Mr. C�ésar Briso Rodr��íguez. Once the sensor modeling by simulating physical characteristics and electrical characteristics, we proceed to the instrumentation and use. This section includes electronic instrumentation that would be necessary for the piezoelectric excitation in the emission mode and for receiving electrical pulses generated by the sensor in response to the received echoes, and matching signal levels right to acquire, in the reception mode. After the adjustment of the signals for the acquisition, these signals will be digitalized, processed and represented on the screen on a PC through a data acquisition card by USB port. Acquisition card is able to sample the response signals and transmit the samples to representation and control software developed in this project. The user interface, the acquisition card control software and processing and representation software has been developed with Visual Basic 2008 and OpenGL graphical libraries.

Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance

The effects of power and time conditions of in situ N2 plasma treatment, prior to silicon nitride (SiN) passivation, were investigated on an AlGaN/GaN high-electron mobility transistor (HEMT). These studies reveal that N2 plasma power is a critical parameter to control the SiN/AlGaN interface quality, which directly affects the 2-D electron gas density. Significant enhancement in the HEMT characteristics was observed by using a low power N2 plasma pretreatment. In contrast, a marked gradual reduction in the maximum drain-source current density (IDS max) and maximum transconductance (gm max), as well as in fT and fmax, was observed as the N2 plasma power increases (up to 40% decrease for 210 W). Different mechanisms were proposed to be dominant as a function of the discharge power range. A good correlation was observed between the device electrical characteristics and the surface assessment by atomic force microscopy and Kelvin force microscopy techniques.

Application and modeling of GaN FET in 1MHz large signal bandwidth power supply for radio frequency power amplifier

In this paper, implementation and testing of non- commercial GaN HEMT in a simple buck converter for envelope amplifier in ET and EER transmission techn iques has been done. Comparing to the prototypes with commercially available EPC1014 and 1015 GaN HEMTs, experimentally demonstrated power supply provided better thermal management and increased the switching frequency up to 25MHz. 64QAM signal with 1MHz of large signal bandw idth and 10.5dB of Peak to Average Power Ratio was gener ated, using the switching frequency of 20MHz. The obtaine defficiency was 38% including the driving circuit an d the total losses breakdown showed that switching power losses in the HEMT are the dominant ones. In addition to this, some basic physical modeling has been done, in order to provide an insight on the correlation between the electrical characteristics of the GaN HEMT and physical design parameters. This is the first step in the optimization of the HEMT design for this particular application.

Nuevas arquitecturas de transpondedores de microondas = New transponder architectures at microwave frequencies = Nouvelles architectures des transpondeurs d’hyperfréquences

En la última década, los sistemas de telecomunicación de alta frecuencia han evolucionado tremendamente. Las bandas de frecuencias, los anchos de banda del usuario, las técnicas de modulación y otras características eléctricas están en constante cambio de acuerdo a la evolución de la tecnología y la aparición de nuevas aplicaciones. Las arquitecturas de los transceptores modernos son diferentes de las tradicionales. Muchas de las funciones convencionalmente realizadas por circuitos analógicos han sido asignadas gradualmente a procesadores digitales de señal, de esta manera, las fronteras entre la banda base y las funcionalidades de RF se difuminan. Además, los transceptores inalámbricos digitales modernos son capaces de soportar protocolos de datos de alta velocidad, por lo que emplean una elevada escala de integración para muchos de los subsistemas que componen las diferentes etapas. Uno de los objetivos de este trabajo de investigación es realizar un estudio de las nuevas configuraciones en el desarrollo de demostradores de radiofrecuencia (un receptor y un transmisor) y transpondedores para fines de comunicaciones y militares, respectivamente. Algunos trabajos se han llevado a cabo en el marco del proyecto TECRAIL, donde se ha implementado un demostrador de la capa física LTE para evaluar la viabilidad del estándar LTE en el entorno ferroviario. En el ámbito militar y asociado al proyecto de calibración de radares (CALRADAR), se ha efectuado una actividad importante en el campo de la calibración de radares balísticos Doppler donde se ha analizado cuidadosamente su precisión y se ha desarrollado la unidad generadora de Doppler de un patrón electrónico para la calibración de estos radares. Dicha unidad Doppler es la responsable de la elevada resolución en frecuencia del generador de “blancos” radar construido. Por otro lado, se ha elaborado un análisis completo de las incertidumbres del sistema para optimizar el proceso de calibración. En una segunda fase se han propuesto soluciones en el desarrollo de dispositivos electro-ópticos para aplicaciones de comunicaciones. Estos dispositivos son considerados, debido a sus ventajas, tecnologías de soporte para futuros dispositivos y subsistemas de RF/microondas. Algunas demandas de radio definida por software podrían cubrirse aplicando nuevos conceptos de circuitos sintonizables mediante parámetros programables de un modo dinámico. También se ha realizado una contribución relacionada con el diseño de filtros paso banda con topología “Hairpin”, los cuales son compactos y se pueden integrar fácilmente en circuitos de microondas en una amplia gama de aplicaciones destinadas a las comunicaciones y a los sistemas militares. Como importante aportación final, se ha presentado una propuesta para ecualizar y mejorar las transmisiones de señales discretas de temporización entre los TRMs y otras unidades de procesamiento, en el satélite de última generación SEOSAR/PAZ. Tras un análisis exhaustivo, se ha obtenido la configuración óptima de los buses de transmisión de datos de alta velocidad basadas en una red de transceptores. ABSTRACT In the last decade, high-frequency telecommunications systems have extremely evolved. Frequency bands, user bandwidths, modulation techniques and other electrical characteristics of these systems are constantly changing following to the evolution of technology and the emergence of new applications. The architectures of modern transceivers are different from the traditional ones. Many of the functions conventionally performed by analog circuitry have gradually been assigned to digital signal processors. In this way, boundaries between baseband and RF functionalities are diffused. The design of modern digital wireless transceivers are capable of supporting high-speed data protocols. Therefore, a high integration scale is required for many of the components in the block chain. One of the goals of this research work is to investigate new configurations in the development of RF demonstrators (a receiver and a transmitter) and transponders for communications and military purposes, respectively. A LTE physical layer demonstrator has been implemented to assess the viability of LTE in railway scenario under the framework of the TECRAIL project. An important activity, related to the CALRADAR project, for the calibration of Doppler radars with extremely high precision has been performed. The contribution is the Doppler unit of the radar target generator developed that reveals a high frequency resolution. In order to assure the accuracy of radar calibration process, a complete analysis of the uncertainty in the above mentioned procedure has been carried out. Another important research topic has been the development of photonic devices that are considered enabling technologies for future RF and microwave devices and subsystems. Some Software Defined Radio demands are addressed by the proposed novel circuit concepts based on photonically tunable elements with dynamically programmable parameters. A small contribution has been made in the field of Hairpin-line bandpass filters. These filters are compact and can also be easily integrated into microwave circuits finding a wide range of applications in communication and military systems. In this research field, the contributions made have been the improvements in the design and the simulations of wideband filters. Finally, an important proposal to balance and enhance transmissions of discrete timing signals between TRMs and other processing units into the state of the art SEOSAR/PAZ Satellite has been carried out obtaining the optimal configuration of the high-speed data transmission buses based on a transceiver network. RÉSUMÉ Les systèmes d'hyperfréquence dédiés aux télécommunications ont beaucoup évolué dans la dernière décennie. Les bandes de fréquences, les bandes passantes par utilisateur, les techniques de modulation et d'autres caractéristiques électriques sont en constant changement en fonction de l'évolution des technologies et l'émergence de nouvelles applications. Les architectures modernes des transcepteurs sont différentes des traditionnelles. Un grand nombre d’opérations normalement effectuées par les circuits analogiques a été progressivement alloué à des processeurs de signaux numériques. Ainsi, les frontières entre la bande de base et la fonctionnalité RF sont floues. Les transcepteurs sans fils numériques modernes sont capables de transférer des données à haute vitesse selon les différents protocoles de communication utilisés. C'est pour cette raison qu’un niveau élevé d'intégration est nécessaire pour un grand nombre de composants qui constitue les différentes étapes des systèmes. L'un des objectifs de cette recherche est d'étudier les nouvelles configurations dans le développement des démonstrateurs RF (récepteur et émetteur) et des transpondeurs à des fins militaire et de communication. Certains travaux ont été réalisés dans le cadre du projet TECRAIL, où un démonstrateur de la couche physique LTE a été mis en place pour évaluer la faisabilité de la norme LTE dans l'environnement ferroviaire. Une contribution importante, liée au projet CALRADAR, est proposée dans le domaine des systèmes d’étalonnage de radar Doppler de haute précision. Cette contribution est le module Doppler de génération d’hyperfréquence intégré dans le système électronique de génération de cibles radar virtuelles que présente une résolution de fréquence très élevée. Une analyse complète de l'incertitude dans l'étalonnage des radars Doppler a été effectuée, afin d'assurer la précision du calibrage. La conception et la mise en oeuvre de quelques dispositifs photoniques sont un autre sujet important du travail de recherche présenté dans cette thèse. De tels dispositifs sont considérés comme étant des technologies habilitantes clés pour les futurs dispositifs et sous-systèmes RF et micro-ondes grâce à leurs avantages. Certaines demandes de radio définies par logiciel pourraient être supportées par nouveaux concepts de circuits basés sur des éléments dynamiquement programmables en utilisant des paramètres ajustables. Une petite contribution a été apportée pour améliorer la conception et les simulations des filtres passe-bande Hairpin à large bande. Ces filtres sont compacts et peuvent également être intégrés dans des circuits à micro-ondes compatibles avec un large éventail d'applications dans les systèmes militaires et de communication. Finalement, une proposition a été effectuée visant à équilibrer et améliorer la transmission des signaux discrets de synchronisation entre les TRMs et d'autres unités de traitement dans le satellite SEOSAR/PAZ de dernière génération et permettant l’obtention de la configuration optimale des bus de transmission de données à grande vitesse basés sur un réseau de transcepteurs.

Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks

Electronic systems that use rugged lightweight plastics potentially offer attractive characteristics (low-cost processing, mechanical flexibility, large area coverage, etc.) that are not easily achieved with established silicon technologies. This paper summarizes work that demonstrates many of these characteristics in a realistic system: organic active matrix backplane circuits (256 transistors) for large (≈5 × 5-inch) mechanically flexible sheets of electronic paper, an emerging type of display. The success of this effort relies on new or improved processing techniques and materials for plastic electronics, including methods for (i) rubber stamping (microcontact printing) high-resolution (≈1 μm) circuits with low levels of defects and good registration over large areas, (ii) achieving low leakage with thin dielectrics deposited onto surfaces with relief, (iii) constructing high-performance organic transistors with bottom contact geometries, (iv) encapsulating these transistors, (v) depositing, in a repeatable way, organic semiconductors with uniform electrical characteristics over large areas, and (vi) low-temperature (≈100°C) annealing to increase the on/off ratios of the transistors and to improve the uniformity of their characteristics. The sophistication and flexibility of the patterning procedures, high level of integration on plastic substrates, large area coverage, and good performance of the transistors are all important features of this work. We successfully integrate these circuits with microencapsulated electrophoretic “inks” to form sheets of electronic paper.

Multiple conduction paths in boron δ-doped diamond structures

Impedance spectroscopy has been used to investigate conductivity within boron-doped diamond in an intrinsic/delta-doped/intrinsic (i-d-i) multilayer structure. For a 5 nm thick delta layer, three conduction pathways are observed, which can be assigned to transport within the delta layer and to two differing conduction paths in the i-layers adjoining the delta layer. For transport in the i-layers, thermal trapping/detrapping processes can be observed, and only at the highest temperature investigated (673 K) can transport due to a single conduction process be seen. Impedance spectroscopy is an ideal nondestructive tool for investigating the electrical characteristics of complex diamond structures.

Enhanced zinc oxide and graphene nanostructures for electronics and sensing applications

Zinc oxide and graphene nanostructures are important technological materials because of their unique properties and potential applications in future generation of electronic and sensing devices. This dissertation investigates a brief account of the strategies to grow zinc oxide nanostructures (thin film and nanowire) and graphene, and their applications as enhanced field effect transistors, chemical sensors and transparent flexible electrodes. Nanostructured zinc oxide (ZnO) and low-gallium doped zinc oxide (GZO) thin films were synthesized by a magnetron sputtering process. Zinc oxide nanowires (ZNWs) were grown by a chemical vapor deposition method. Field effect transistors (FETs) of ZnO and GZO thin films and ZNWs were fabricated by standard photo and electron beam lithography processes. Electrical characteristics of these devices were investigated by nondestructive surface cleaning, ultraviolet irradiation treatment at high temperature and under vacuum. GZO thin film transistors showed a mobility of ∼5.7 cm2/V·s at low operation voltage of <5 V and a low turn-on voltage of ∼0.5 V with a sub threshold swing of ∼85 mV/decade. Bottom gated FET fabricated from ZNWs exhibit a very high on-to-off ratio (∼106) and mobility (∼28 cm2/V·s). A bottom gated FET showed large hysteresis of ∼5.0 to 8.0 V which was significantly reduced to ∼1.0 V by the surface treatment process. The results demonstrate charge transport in ZnO nanostructures strongly depends on its surface environmental conditions and can be explained by formation of depletion layer at the surface by various surface states. A nitric oxide (NO) gas sensor using single ZNW, functionalized with Cr nanoparticles was developed. The sensor exhibited average sensitivity of ∼46% and a minimum detection limit of ∼1.5 ppm for NO gas. The sensor also is selective towards NO gas as demonstrated by a cross sensitivity test with N2, CO and CO2 gases. Graphene film on copper foil was synthesized by chemical vapor deposition method. A hot press lamination process was developed for transferring graphene film to flexible polymer substrate. The graphene/polymer film exhibited a high quality, flexible transparent conductive structure with unique electrical-mechanical properties; ∼88.80% light transmittance and ∼1.1742Ω/sq k sheet resistance. The application of a graphene/polymer film as a flexible and transparent electrode for field emission displays was demonstrated.

Low resistivity Pt interconnects developed by electron beam assisted deposition using novel gas injector system

Electron beam-induced deposition (EBID) is a direct write process where an electron beam locally decomposes a precursor gas leaving behind non-volatile deposits. It is a fast and relatively in-expensive method designed to develop conductive (metal) or isolating (oxide) nanostructures. Unfortunately the EBID process results in deposition of metal nanostructures with relatively high resistivity because the gas precursors employed are hydrocarbon based. We have developed deposition protocols using novel gas-injector system (GIS) with a carbon free Pt precursor. Interconnect type structures were deposited on preformed metal architectures. The obtained structures were analysed by cross-sectional TEM and their electrical properties were analysed ex-situ using four point probe electrical tests. The results suggest that both the structural and electrical characteristics differ significantly from those of Pt interconnects deposited by conventional hydrocarbon based precursors, and show great promise for the development of low resistivity electrical contacts.