Analytical calculation of far infrared spectra of ice in terms of a molecular model

Wideband far infrared (FIR) spectra of complex permittivity e(p) of ice are calculated in terms of a simple analytical theory based on the method of dipolar autocorrelation functions. The molecular model represents a revision of the model recently presented for liquid water in Adv. Chem. Phys. 127 (2003) 65. A composite two-fractional model is proposed. The model is characterised by three phenomenological potential wells corresponding to the three FIR bands observed in ice. The first fraction comprises dipoles reorienting in a rather narrow and deep hat-like well; these dipoles generate the librational band centred at the frequency approximate to 880 cm(-1). The second fraction comprises elastically interacting particles; they generate two nearby bands placed around frequency 200 cm(-1). For description of one of these bands the harmonic oscillator (HO) model is used, in which translational oscillations of two charged molecules along the H-bond are considered. The other band is produced by the H-bond stretch, which governs hindered rotation of a rigid dipole. Such a motion and its dielectric response are described in terms of a new cut parabolic (CP) model applicable for any vibration amplitude. The composite hat-HO-CP model results in a smooth epsilon(nu) ice spectrum, which does not resemble the noise-like spectra of ice met in the known literature. The proposed theory satisfactorily agrees with the experimental ice spectrum measured at - 7 degrees C. The calculated longitudinal optic-transverse optic (LO-TO) splitting occurring at approximate to 250 cm(-1) qualitatively agrees with the measured data. (c) 2004 Elsevier B.V. All rights reserved.

Nonharmonic transverse vibration of the H-bonded molecules and the THz spectra in ice and water

A nonlinear equation of motion is found for the dimer comprising two charged H2O molecules. The THz dielectric response to nonharmonic vibration of a nonrigid dipole, forming the hydrogen bond (HB), is found in the direction transverse to this bond. An explicit expression is derived for the autocorrelator that governs the spectrum generated by transverse vibration (TV) of such a dipole. This expression is obtained by analytical solution of the truncated set of recurrence equations. The far infrared (FIR) spectra of ice at the temperature - 7 degrees C are calculated. The wideband, in the wavenumber (frequency) v range 0... 100.0 cm(-1), spectra are obtained for liquid water at room temperature and for supercooled water at -5.6 degrees C. All spectra are represented in terms of the complex permittivity epsilon(v) and the absorption coefficient alpha(v). The obtained analytical formula for epsilon comprises the term epsilon(perpendicular to) pertinent to the studied TV mechanism with three additional terms Delta epsilon(q), Delta epsilon(mu), and epsilon(or) arising, respectively, from: elastic harmonic vibration of charged molecules along the H-bond; elastic reorientation of HB permanent dipoles; and rather free libration of permanent dipoles in 'defects' of water/ice structure. The suggested TV-dielectric relaxation mechanism allows us: (a) to remove the THz 'deficit' of loss epsilon" inherent in previous theoretical studies; (b) to explain the THz loss and absorption spectra in supercooled (SC) water; and (c) to describe, in agreement with the experiment, the low- and high-frequency tails of the two bands of ice H2O located in the range 10...300 cm(-1). Specific THz dielectric properties of SC water are ascribed to association of water molecules, revealed in our study by transverse vibration of HB charged molecules. (C) 2006 Published by Elsevier B.V.

Changes in functional behavior of 93 % Pb(Mg1/3Nb2/3)O-3-7 % PbTiO3 thin films induced by ac electric fields

The dielectric properties of Au/[93%Pb(Mg1/3Nb2/3)O-3-7%PbTiO3] (PMN-PT)/(La0.5Sr0.5)CoO3/MgO thin-film capacitor heterostructures, made using pulsed laser deposition, have been investigated, with particular emphasis on the changes in response associated with increasing the magnitude of the ac measuring field. It was found that increasing the ac field caused a change in the frequency spectrum of relaxators, increasing the speed of response of "slow" relaxators, with an associated decrease in the freezing temperature (T-f) of the relaxor system; in addition, other characteristic parameters relating to polar relaxation (activation energy E-a and attempt frequency 1/tau(0)), described by fitting of the dielectric response to a Vogel-Fulcher expression, were found to change continuously as ac field levels were increased.

Electromagnetic pulse compression and energy localization in quantum plasmas

The evolution of the intensity of a relativistic laser beam propagating through a dense quantum plasma is investigated, by considering different plasma regimes. A cold quantum fluid plasma and then a thermal quantum description(s) is (are) adopted, in comparison with the classical case of reference. Considering a Gaussian beam cross-section, we investigate both the longitudinal compression and lateral/longitudinal localization of the intensity of a finite-radius electromagnetic pulse. By employing a quantum plasma fluid model in combination with Maxwell's equations, we rely on earlier results on the quantum dielectric response, to model beam-plasma interaction. We present an extensive parametric investigation of the dependence of the longitudinal pulse compression mechanism on the electron density in cold quantum plasmas, and also study the role of the Fermi temperature in thermal quantum plasmas. Our numerical results show pulse localization through a series of successive compression cycles, as the pulse propagates through the plasma. A pulse of 100 fs propagating through cold quantum plasma is compressed to a temporal size of approximate to 1.35 attosecond and a spatial size of approximate to 1.08 10(-3) cm. Incorporating Fermi pressure via a thermal quantum plasma model is shown to enhance localization effects. A 100 fs pulse propagating through quantum plasma with a Fermi temperature of 350 K is compressed to a temporal size of approximate to 0.6 attosecond and a spatial size of approximate to 2.4 10(-3) cm. (c) 2010 Elsevier B.V. All rights reserved.

Tip-enhanced Raman microscopy: practicalities and limitations

The feasibility of apertureless scanning near-field Raman microscopy, exploiting the local enhancement in Raman scattering in the vicinity of a silver or gold tip, was investigated. Using the finite difference time domain method we calculated the enhancement of electric field strength, and hence Raman scattering, achieved through the resonant excitation of local modes in the tip. By modelling the frequency-dependent dielectric response of the metal tip we were able to highlight the resonant nature of the tip-enhancement and determine the excitation wavelength required for the strongest electric field enhancement, and hence Raman scattering intensity, which occurs for the excitation of modes localized at the tip apex. It is demonstrated that a peak Raman enhancement of 10(7)-fold should be achievable with <5 nm spatial resolution. We show that surface-enhanced Raman scattering from carbon contamination on a silver or gold tip can be significant. However, we find for a tip of radius of curvature 20 nm that the Raman enhancement should decay totally within 20 nm from the tip. Hence withdrawal of the tip by this distance should lead to the disappearance of the tip-enhanced signal, leaving only that from carbon contamination on the tip itself and the intrinsic signal from the sample. Copyright (C) 2003 John Wiley Sons, Ltd.

Epitaxial ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films on La0.7Sr0.3MnO3 bottom electrode

Epitaxial (001)-oriented 0.7Pb(Mg_0.33Nb_0.67)O₃-0.3PbTiO₃ (PMN-PT) thin films were deposited by pulsed laser deposition on vicinal SrTiO₃ (001) substrates using La_0.7Sr_0.3MnO₃ as bottom electrode. Detailed microstructural investigations of these films were carried out using X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). Polarization-field hysteresis curves were measured at room temperature. Spontaneous polarization P s , remnant polarization P r and coercive voltage V c were found to be 25 μC/cm², 15 μC/cm² and 0.81 V, respectively. Field dependent dielectric constant measurements exhibited butterfly shaped curves, indicating the true ferroelectric nature of these films at room temperature. The dielectric constant and the dielectric loss at 100 kHz were found to be 238 and 0.14, respectively. The local piezoelectric properties of PMN-PT films were investigated by piezoelectric force microscopy and were found to exhibit a local piezoelectric coefficient of 7.8 pm/V.

Paving the way to nanoionics: atomic origin of barriers for ionic transport through interfaces

The blocking of ion transport at interfaces strongly limits the performance of electrochemical nanodevices for energy applications. The barrier is believed to arise from space-charge regions generated by mobile ions by analogy to semiconductor junctions. Here we show that something different is at play by studying ion transport in a bicrystal of yttria (9% mol) stabilized zirconia (YSZ), an emblematic oxide ion conductor. Aberration-corrected scanning transmission electron microscopy (STEM) provides structure and composition at atomic resolution, with the sensitivity to directly reveal the oxygen ion profile. We find that Y segregates to the grain boundary at Zr sites, together with a depletion of oxygen that is confined to a small length scale of around 0.5 nm. Contrary to the main thesis of the space-charge model, there exists no evidence of a long-range O vacancy depletion layer. Combining ion transport measurements across a single grain boundary by nanoscale electrochemical strain microscopy (ESM), broadband dielectric spectroscopy measurements, and density functional calculations, we show that grain-boundary-induced electronic states act as acceptors, resulting in a negatively charged core. Ultimately, it is this negative charge which gives rise to the barrier for ion transport at the grain boundary

Microstructure design of Titanate-based electroceramics

Electrocerâmicos são uma classe de materiais avançados com propriedades eléctricas valiosas para aplicações. Estas propriedades são geralmente muito dependentes da microestrutura dos materiais. Portanto, o objectivo geral deste trabalho é investigar o desenho da resposta dieléctrica de filmes espessos obtidos por Deposição Electroforética (EPD) e cerâmicos monolíticos, através do controlo da evolução da microestrutura durante a sinterização de electrocerâmicos à base de titanatos. Aplicações sem fios na indústria microelectrónica e de comunicações, em rápido crescimento, tornaram-se um importante mercado para os fabricantes de semicondutores. Devido à constante necessidade de miniaturização, redução de custos e maior funcionalidade e integração, a tecnologia de filmes espessos está a tornar-se uma abordagem de processamento de materiais funcionais cada vez mais importante. Uma técnica adequada neste contexto é EPD. Os filmes espessos resultantes necessitam de um passo subsequente de sinterização que é afectada pelo substrato subjacente, tendo este um forte efeito sobre a evolução da microestrutura. Relacionado com a miniaturização e a discriminação do sinal, materiais dieléctricos usados como componentes operando a frequências das microondas em aplicações na industria microelectrónica de comunicações devem apresentar baixas perdas dieléctricas e elevadas permitividade dieléctrica e estabilidade com a temperatura. Materiais do sistema BaO-Ln2O3- TiO2 (BLnT: Ln = La ou Nd), como BaLa4Ti4O15 (BLT) e Ba4.5Nd9Ti18O54 (BNT), cumprem esses requisitos e são interessantes para aplicações, por exemplo, em estações de base para comunicações móveis ou em ressonadores para telefones móveis, onde a miniaturização dos dispositivos é muito importante. Por sua vez, o titanato de estrôncio (SrTiO3, STO) é um ferroeléctrico incipiente com constante dieléctrica elevada e baixas perdas, que encontra aplicação em, por exemplo, condensadores de camada interna, tirando partido de fronteiras de grão altamente resistivas. A dependência da permitividade dieléctrica do campo eléctrico aplicado torna este material muito interessante para aplicações em dispositivos de microondas sintonizáveis. Materiais à base de STO são também interessantes para aplicações termoeléctricas, que podem contribuir para a redução da actual dependência de combustíveis fósseis por meio da geração de energia a partir de calor desaproveitado. No entanto, as mesmas fronteiras de grão resistivas são um obstáculo relativamente à eficiência do STO para aplicações termoeléctricas. Para além do efeito do substrato durante a sinterização constrangida, outros factores, como a presença de fase líquida, a não-estequiometria ou a temperatura de sinterização, afectam significativamente não apenas a microestrutura dos materiais funcionais, mas também a sua resposta dieléctrica. Se adequadamente compreendidos, estes factores podem ser intencionalmente usados para desenhar a microestrutura dos electrocerâmicos e, desta forma, as suas propriedades dieléctricas. O efeito da não-estequiometria (razão Sr/Ti 0.995-1.02) no crescimento de grão e resposta dieléctrica de cerâmicos de STO foi investigado neste trabalho. A mobilidade das fronteiras de grão aumenta com a diminuição da razão Sr/Ti. A resistividade do interior dos grãos e das fronteiras de grão é sistematicamente diminuída em amostras não-estequiométricas de STO, em comparação com o material estequiométrico. O efeito é muito mais forte para as fronteiras de grão do que para o seu interior. Dependências sistemáticas da não-estequiometria foram também observadas relativamente à dependência da condutividade da temperatura (muito mais afectada no caso da contribuição das fronteiras de grão), à capacitância do interior e fronteiras de grão e à espessura das fronteiras de grão. Uma anomalia no crescimento de grão em cerâmicos de STO ricos em Ti foi também observada e sistematicamente analisada. Foram detectadas três descontinuidades na dependência do tipo Arrhenius do crescimento de grão relativamente à temperatura com diminuições no tamanho de grão a temperaturas em torno de 1500, 1550 e 1605 °C. Além disso, descontinuidades semelhantes foram também observadas na dependência da energia de activação relativamente à condutividade das fronteiras de grão e na espessura das fronteiras de grão, avaliadas por Espectroscopia de Impedância. Estas notáveis coincidências suportam fortemente a formação de diferentes complexos de fronteira de grão com transições entre os regimes de crescimento de grão observados, que podem ser correlacionados com diferentes mobilidades de fronteira de grão e propriedades dieléctricas. Um modelo é sugerido, que se baseia na diminuição da fase líquida localizada nas fronteiras de grão, como o aumento da temperatura de sinterização, um cenário compatível com um fenómeno de solubilidade retrógrada, observado anteriormente em metais e semicondutores, mas não em cerâmicos. A EPD de filmes espessos de STO em substratos de folha de Pt e a sinterização constrangida dos filmes fabricados foram também preliminarmente tratadas. Filmes espessos de STO foram depositados com êxito por EPD sobre substratos de Pt e, depois de sinterizados, atingiram densidades elevadas. Um aumento da densificação e do tamanho de grão assim como o alargamento da distribuição de tamanho do grão foram observados com a diminuição da razão Sr/Ti, tal como anteriormente observado em amostras cerâmicas. Grãos equiaxiados foram observados para todas as composições, mas um certo grau de anisotropia na orientação dos poros foi detectado: os poros revelaram uma orientação vertical preferencial. Este trabalho focou-se também na sinterização constrangida do sistema BLnT (Ln = La ou Nd), nomeadamente de filmes espessos de BLT e BNT sobre substratos de folha de platina, e na relação do desenvolvimento de anisotropia microestrutural com as propriedades dieléctricas. As observações durante a sinterização constrangida foram comparadas com cerâmicos monolíticos equivalentes sinterizados livremente. Filmes espessos de BLnT (Ln = La ou Nd) com elevada densidade foram obtidos por EPD e subsequente sinterização constrangida. A anisometria cristalográfica do material em conjunto com um passo de sinterização constrangida resultou em grãos alongados e microestruturas anisotrópicas. O efeito do stress do substrato durante a sinterização constrangida originou graus mais elevados de anisotropia (grãos e poros alongados e orientação preferencial, bem como textura cristalográfica) nos filmes sinterizados relativamente aos cerâmicos equivalentes sinterizados livremente, não obstante o estado equivalente das amostras em verde. A densificação dos filmes de BLnT (Ln = La ou Nd) é retardada em comparação com os cerâmicos, mas depois de longos tempos de sinterização densidades semelhantes são obtidas. No entanto, em oposição a observações na sinterização constrangida de outros sistemas, o crescimento do grão em filmes de BLnT (Ln = La ou Nd) é favorecido pelo constrangimento causado pelo substrato. Além disso, grãos e poros alongados orientados paralelamente ao substrato foram desenvolvidos durante a sinterização constrangida de filmes espessos. Verificou-se uma forte correlação entre a evolução de grãos e poros, que começou assim que o crescimento do grão se iniciou. Um efeito da tensão do substrato no aumento do crescimento de grão, bem como um forte “Zener pinning”, origina microestruturas altamente texturizadas, o que também é observado a nível cristalográfico. Efeitos marcantes da anisotropia microestrutural foram também detectados nas propriedades dieléctricas dos filmes de BLnT (Ln = La ou Nd). Juntamente com o aumento da razão de aspecto dos grãos, do factor de orientação e do grau de textura cristalográfica, a permitividade relativa é ligeiramente diminuída e o coeficiente de temperatura da permitividade evolui de negativo para positivo com o aumento do tempo isotérmico de sinterização. Este trabalho mostra que a não-estequiometria pode ser usada para controlar a mobilidade das fronteiras de grão e, portanto, desenhar a microestrutura e as propriedades dieléctricas de electrocerâmicos à base de STO, com ênfase nas propriedades das fronteiras de grão. O papel da não-estequiometria no STO e dos complexos de fronteira de grão no desenvolvimento microestrutural é discutido e novas oportunidades para desenhar as propriedades de materiais funcionais são abertas. As observações relativamente à sinterização constrangida apontam para o efeito de tensões mecânicas desenvolvidas devido ao substrato subjacente no desenvolvimento da microestrutura de materiais funcionais. É assim esperado que a escolha adequada de substrato permitia desenhar a microestrutura de filmes espessos funcionais com desempenho optimizado. “Stress Assisted Grain Growth” (SAGG) é então proposto como uma técnica potencial para desenhar a microestrutura de materiais funcionais, originando microestruturas anisotrópicas texturizadas com propriedades desejadas.

Investigation of Frustrated Quasi-One-Dimensional Quantum Spin-Chain Materials

Copper arsenite CuAs2O4 and Copper antimonite CuSb2O4 are S=1/2 (Cu2+ 3d9 electronic configuration) quasi-one-dimensional quantum spin-chain compounds. Both compounds crystallize with tetragonal structures containing edge sharing CuO6 octahedra chains which experience Jahn-Teller distortions. The basal planes of the octahedra link together to form CuO2 ribbon-chains which harbor Cu2+ spin-chains. These compounds are magnetically frustrated with competing nearest-neighbour and next-nearest-neighbour intrachain spin-exchange interactions. Despite the similarities between CuAs2O4 and CuSb2O4, they exhibit very different magnetic properties. In this thesis work, the physical properties of CuAs2O4 and CuSb2O4 are investigated using a variety of experimental techniques which include x-ray diffraction, magnetic susceptibility measurements, heat capacity measurements, Raman spectroscopy, electron paramagnetic resonance, neutron diffraction, and dielectric capacitance measurements. CuAs2O4 exhibits dominant ferromagnetic nearest-neighbour and weaker antiferromagnetic next-nearest-neighbour intrachain spin-exchange interactions. The ratio of the intrachain interactions amounts to Jnn/Jnnn = -4.1. CuAs2O4 was found to order with a ferromagnetic groundstate below TC = 7.4 K. An extensive physical characterization of the magnetic and structural properties of CuAs2O4 was carried out. Under the effect of hydrostatic pressure, CuAs2O4 was found to undergo a structural phase transition at 9 GPa to a new spin-chain structure. The structural phase transition is accompanied by a severe alteration of the magnetic properties. The high-pressure phase exhibits dominant ferromagnetic next-nearest-neighbour spin-exchange interactions and weaker ferromagnetic nearest-neighbour interactions. The ratio of the intrachain interactions in the high-pressure phase was found to be Jnn/Jnnn = 0.3. Structural and magnetic characterizations under hydrostatic pressure are reported and a relationship between the structural and magnetic properties was established. CuSb2O4 orders antiferromagnetically below TN = 1.8 K with an incommensurate helicoidal magnetic structure. CuSb2O4 is characterized by ferromagnetic nearest-neighbour and antiferromagnetic next-nearest-neighbour spin-exchange interactions with Jnn/Jnnn = -1.8. A (H, T) magnetic phase diagram was constructed using low-temperature magnetization and heat capacity measurements. The resulting phase diagram contains multiple phases as a consequence of the strong intrachain magnetic frustration. Indications of ferroelectricity were observed in the incommensurate antiferromagnetic phase.

The effects of mass loading the ossicles with a floating mass transducer on middle ear transfer function

Hypothesis: The aim of this study was to measure the mass loading effect of an active middle-ear implant (the Vibrant Soundbridge) in cadaver temporal bones. Background: Implantable middle ear hearing devices such as Vibrant Soundbridge have been used as an alternative to conventional hearing aids for the rehabilitation of sensorineural hearing loss. Other than the obvious disadvantage of requiring implantation middle ear surgery, it also applies a direct weight on the ossicular chain which, in turn, may have an impact on residual hearing. Previous studies have shown that applying a mass directly on the ossicular chain has a damping effect on its response to sound. However, little has been done to investigate the magnitude and the frequency characteristics of the mass loading effect in devices such as the Vibrant Soundbridge. Methods: Five fresh cadaver temporal bones were used. The stapes displacement was measured using laser Doppler vibrometry before and after the placement of a Vibrant Sound-bridge floating mass transducer. The effects of mass and attachment site were compared with the unloaded response. Measurements were obtained at frequencies between 0.1 and 10 kHz and at acoustic input levels of 100 dB sound pressure level. Each temporal bone acted as its own control. Results: Placement of the floating mass transducer caused a reduction of the stapes displacement. There were variations between the bones. The change of the stapes displacement varied from 0 dB to 28 dB. The effect was more prominent at frequencies above 1,000 Hz. Placing the floating mass transducer close to the incudostapedial joint reduced the mass loading effect. Conclusion: The floating mass transducer produces a measurable reduction of the stapes displacement in the temporal bone model. The effect is more prominent at high frequencies.

Towards a THz osmometer

This work discusses the use of a THz-transient spectrometer for the measurement of tissue water content. The relation of both mammalian- and plant-cell water content to the osmotic potential is discussed. The process of equilibration of tissue water potential with the water potential of water vapor in an osmometer cuvette is described. Observation of the THz transmittance through the water vapor provides a measure of the water activity and water potential in the sample. The possibility of performing dielectric relaxation measurements of the liquid water in the tissue at THz frequencies directly and the use of proline as marker of water stress in tissue are discussed.

Microcontroller-based peak current mode control using digital slope compensation

Microcontroller-based peak current mode control of a buck converter is investigated. The new solution uses a discrete time controller with digital slope compensation. This is implemented using only a single-chip microcontroller to achieve desirable cycle-by-cycle peak current limiting. The digital controller is implemented as a two-pole, two-zero linear difference equation designed using a continuous time model of the buck converter and a discrete time transform. Subharmonic oscillations are removed with digital slope compensation using a discrete staircase ramp. A 16 W hardware implementation directly compares analog and digital control. Frequency response measurements are taken and it is shown that the crossover frequency and expected phase margin of the digital control system match that of its analog counterpart.

Phase-transition studies of Ba(0.90)Ca(0.10)(Ti(1-x)Zr(x))O(3) ferroelectric ceramic compounds

Perovskite-structured Ba(0.90)Ca(0.10)(Ti(1-x)Zr(x))O(3) ceramics were prepared in this work and subsequently studied in terms of composition-dependent dielectric and high-resolution long-range order structural properties from 30 to 450 K. The dielectric response of these materials was measured at several frequencies in the range from 1 kHz to 1 MHz. Combining both techniques, including Rietveld refinement of the X-ray diffraction data, allowed observing that, when increasing Zr(4+) content, the materials change from conventional to diffuse and relaxor ferroelectric compounds, the transition occurring spontaneously at the x = 0.18 composition. Interestingly, this spontaneous transition turned out to be prevented for a further increase of Zr(4+). On the basis of all the dielectric and structural results processed, a phase diagram of this system is presented. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Electromechanical properties of 0-3 vegetable based polyurethane and lead zirconate titanate composite.

Composite made of Lead Zirconate Titranate (PZT) ceramic powder and castor oil based polyurethane (PU) were prepared in the thin film form with 0-3 connectivity by spin coating. The composite films were obtained in the thickness range of 100 mum to 300 mum using 33-vol.% of ceramic. The samples mechanical resistance. The material was characterised by dielectric spectroscopy, thermally stimulated discharge current (TSDC), hysteresis measurements and laser-intensity-modulation method (LIMM). The pyroelectric coefficient at 343 K was 7x10(-5) C.m(-2) K-1 for the sample poled with 10 MV/m at 373 K for Ih. The results show that this new composite can be used as suitable piezo and pyroelectric sensors.

Ionized oxygen vacancy-related electrical conductivity in (Pb(1-x)La(x)) (Zr(0.90)Ti(0.10))(1-x/4)O(3) ceramics

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)