Efficient laser oscillation of Yb : Y3Al5O12 single crystal grown by temperature gradient technique

Low-threshold and highly efficient continuous-wave laser performance of Yb:Y3Al5O12 (Yb:YAG) single crystal grown by a temperature gradient technique (TGT) was achieved at room temperature. The laser can be operated at 1030 and 1049 nm by varying the transmission of the output coupler. Slope efficiencies of 57% and 68% at 1049 and 1030 nm, respectively, were achieved for 10 at. % Yb:YAG sample in continuous-wave laser-diode pumping. The effect of pump power on the laser emission spectrum of both wavelengths is addressed. The near-diffraction-limited beam quality for different laser cavities was achieved. The excellent laser performance indicates that TGT-grown Yb:YAG crystals have very good optical quality and can be potentially used in high-power solid-state lasers.

Efficient tunable diode-pumped Yb : LYSO laser

We demonstrated efficient laser action of a new ytterbium-doped oxyorthosilicate crystal Yb:LuYSiO5 ( Yb: LYSO) under high-power diode-pumping. The spectroscopic features and laser performance of the alloyed oxyorthosilicate crystal are compared with those of ytterbium-doped lutetium and yttrium oxyorthosilicates. In the continuous-wave laser operation of Yb: LYSO, a maximal slope efficiency of 96% and output power of 7.8 W were respectively achieved with different pump sources. The Yb: LYSO laser exhibits not only little sensitivity to the pump wavelength drift but also a broad tunability. By using a dispersive prism as the intracavity tuning element, we demonstrated that the continuous-wave Yb: LYSO laser exhibit a continuous tunability in the spectral range of 1014-1091 nm. (c) 2006 Optical Society of America.

Low-threshold and continuously tunable Yb : Gd2SiO5 laser

Yb:Gd2SiO5 (Yb:GSO) exhibits a large fundamental manifold splitting. Its long-wavelength emission band around 1088 nm, which has the largest emission cross section, encounters the lowest reabsorption losses caused by thermal population of the terminal laser level. As a result, low-threshold and tunable continuous-wave Yb:GSO lasers were demonstrated. A slope efficiency up to 86% and a pumping threshold as low as 127 mW were achieved for a continuous-wave Yb:GSO laser at 1092.5 nm under the pump of a high-brightness laser diode. A continuous tunability between 1000 and 1120 nm was realized with an SF14 prism as the intracavity tuning element. (c) 2006 American Institute of Physics.

Characterization of diode-pumped laser operation of a novel Yb : GSO crystal

We report what is believed to be the first demonstration of the laser action of Yb3+ -doped Gd2SiO5 (Yb:GSO) crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm(2), which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm(2)). The laser wavelength is 1090 mn. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5 W. By using the SESAM, the Q-switched mode locking and CW mode-locked operations are demonstrated.

Efficient diode-pumped Tm : YALO(3) laser with a pump recycling scheme

By using a pump recycling configuration, the maximum power of 8.1 W in the wavelength range 1.935-1.938 mu m is generated by a 5-mm long Tm:YAlO3 (4 at. %) laser operating at 18 degrees C with a pump power of 24 W. The highest slope efficiency of 42% is attained, and the pump quantum efficiency is up to 100%. The Tm:YAlO3 laser is employed as a pumping source of singly-doped Ho(l%):GdVO4 laser operating at room temperature, in which continuous wave output power of greater than 0.2 W at 2.05 mu m is achieved with a slope efficiency of 9%.

Judd-Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal

This paper reports that the TM3+:Lu2SiO5 (Tm:LSO) crystal is grown by Czochralski technique. The room-temperature absorption spectra of Tm:LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Omega(2)=9.3155 x 10(-20) cm(2), Omega(4)=8.4103 x 10(-20) cm(2), Omega(6)=1.5908 x 10(-20) cm(2), the fluorescence lifetime is calculated to be 2.03 ms for F-3(4) -> H-3(6) transition, and the integrated emission cross section is 5.81 x 10(-18) cm(2). Room-temperature laser action near 2 mu m under diode pumping is experimentally evaluated in Tm:LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuous-wave maximum output power of 0.67 W. The emission wavelengths of Tm:LSO laser are centred around 2.06 mu m with spectral bandwidth of similar to 13.6 nm.

Room-temperature cw and pulsed operation of a diode-end-pumped Tm:YAP laser

We report the continuous-wave and acousto-optical Q-switched operation of a diode-end-pumped Tm:YAP laser. Continuous-wave output power of 3.5 W at 1.99 mu m was obtained under the absorbed pump power of 14 W. Under Q-switched laser operation, the average output power increased from 1.57 W to 2.0 W, with an absorbed pump power of 12.6 W, as the repetition rate increased from 1 kHz to 10 kHz. The maximum Q-switched pulse energy was 1.57 mJ with a repetition rate of 1 kHz. The minimum pulse width was measured to be about 80 ns, corresponding to a peak power of 19.6 kW.

Holmium laser in-band pumped by a thulium laser in the same host of YAlO3

We report on the room-temperature continuous-wave (CW) operation of a Ho:YAlO3 laser that is resonantly end pumped at 1.94 mu m by a diode-pumped thulium-doped laser in the same host. Through the use of a 1 at % Ho3+-doped 20-mm-long YAlO3 crystal (b cut), the Ho:YAlO3 laser generated 1 W of linearly polarized (E//c) output at 2118 nm and 0.55 W of E//a output at 2128.5 nm for an incident pump power of 5 W, with an output coupler transmission of 14 and 3%, respectively. An optical-to-optical conversion efficiency of 20% and a slope efficiency of 33% were achieved at 2118 nm corresponding to an incident pump power.

镱、钠共掺的氟化钙晶体在1050nm的可饱和吸收作用

通过在稳定连续波运转的Yb:YAG激光器中插入不同掺杂浓度的新型钠、镱共掺的氟化钙晶体的对比性实验,证明了镱、钠共掺的氟化钙晶体在1050nm具有明显的可饱和吸收作用,从而解释了该晶体作为增益介质在该波段总是趋于自调Q运转的原因.Yb3+离子是该晶体可饱和吸收作用的主要因素,但是共掺入适当的Na离子可以明显改善晶体的调Q效果.优化共掺镱、钠离子的浓度和比例后的氟化钙晶体能够作为1050nm波段激光器的被动Q开关.

Effects of CO2 laser conditioning of the antireflection Y2O3/SiO2 coatings at 351 nm

Y2O3/SiO2 coatings were deposited on fused silica by electron beam evaporation. A continuous wave CO2 laser was used to condition parts of the prepared samples at different scanning speeds in the air. LAMBDA 900 spectrometer was used to investigate the changes of the transmittance and residual reflection spectrum. A Nomarski microscope under dark field was used to examine the changes of the micro defect density. The changes of the surface roughness and the microstructure of the film before and after conditioning were investigated by AFM and X-ray diffraction, respectively. We found that laser-induced damage threshold (LIDT) of the films conditioning at 30 mm/s scanning speed was increased by more than a factor of 3 over the thresholds of the as-deposited films. The conditioning effect was correlated with an irradiation-induced decrease of the defect density and absorption of the films. (c) 2005 Elsevier B.V. All rights reserved.

Influences of CO2 laser annealing on mechanical and laser-induced damage properties of ZrO2 thin films

Zirconium dioxide (ZrO2) thin films were deposited on BK7 glass substrates by the electron beam evaporation method. A continuous wave CO2 laser was used to anneal the ZrO2 thin films to investigate whether beneficial changes could be produced. After annealing at different laser scanning speeds by CO2 laser, weak absorption of the coatings was measured by the surface thermal lensing (STL) technique, and then laser-induced damage threshold (LIDT) was also determined. It was found that the weak absorption decreased first, while the laser scanning speed is below some value, then increased. The LIDT of the ZrO2 coatings decreased greatly when the laser scanning speeds were below some value. A Nomarski microscope was employed to map the damage morphology, and it was found that the damage behavior was defect-initiated both for annealed and as-deposited samples. The influences of post-deposition CO2 laser annealing on the structural and mechanical properties of the films have also been investigated by X-ray diffraction and ZYGO interferometer. It was found that the microstructure of the ZrO2 films did not change. The residual stress in ZrO2 films showed a tendency from tensile to compressive after CO, laser annealing, and the variation quantity of the residual stress increased with decreasing laser scanning speed. The residual stress may be mitigated to some extent at proper treatment parameters. (c) 2007 Elsevier GmbH. All rights reserved.

Trapped charge dynamics in a sol-gel based TiO(2) high- k gate dielectric silicon metal-oxide-semiconductor field effect transistor.

We have studied the response of a sol-gel based TiO(2), high k dielectric field effect transistor structure to microwave radiation. Under fixed bias conditions the transistor shows frequency dependent current fluctuations when exposed to continuous wave microwave radiation. Some of these fluctuations take the form of high Q resonances. The time dependent characteristics of these responses were studied by modulating the microwaves with a pulse signal. The measurements show that there is a shift in the centre frequency of these high Q resonances when the pulse time is varied. The measured lifetime of these resonances is high enough to be useful for non-classical information processing.

Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.

Beam propagation modelling of tapered waveguide lasers

A dynamic beam propagation model allows design optimization of high power low divergence tapered waveguide lasers. The model is extended to include spatially-resolved temperature profiles and a temperature dependent gain. Using this model, design parameters such as the optimum facet reflectivity, taper angle, and waveguide dimension can be calculated for low far-field divergence and high continuous wave power.

Plume attenuation under high power Nd:yttritium-aluminum-garnet laser welding

During high-power continuous wave (cw) Nd:yttritium-aluminum-garnet (YAG) laser welding a vapor plume is formed containing vaporized material ejected from the keyhole. The gas used as a plume control mechanism affects the plume shape but not its temperature, which has been found to be less than 3000 K, independent of the atmosphere and plume control gases. In this study high-power (up to 8 kW) cw Nd:YAG laser welding has been performed under He, Ar, and N2 gas atmospheres, extending the power range previously studied. The plume was found to contain very small evaporated particles of diameter less than 50 nm. Rayleigh and Mie scattering theories were used to calculate the attenuation coefficient of the incident laser power by these small particles. In addition the attenuation of a 9 W Nd:YAG probe laser beam, horizontally incident across the plume generated by the high-power Nd:YAG laser, was measured at various positions with respect to the beam-material interaction point. Up to 40% attenuation of the probe laser power was measured at positions corresponding to zones of high concentration of vapor plume, shown by high-speed video measurements. These zones interact with the high-power Nd:YAG laser beam path and, can result in significant laser power attenuation. © 2004 Laser Institute of America.