A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

A new idea of power device, which contains highly nitrogen-doped CVD diamond and Schottky contact, is proposed to actualise a power device with diamond. Two-dimensional simulation is conducted using ISE TCAD device simulator. While comparably high current is obtained in a transient simulation as expected, this current does not contribute to the drain-source current because of the symmetry of the device. Using an asymmetric structure or bias conditions, the device has high potential as an electric device for extremely high power, high frequency and high temperature. © 2003 Elsevier Science B.V. All rights reserved.

Mechanical and tribological properties of epitaxial cubic boron nitride thin films grown on diamond

电子邮箱nataliya.deyneka@uni-ulm.de

Effect of heavily doped boron on bandgap narrowing of strained SiGe layers

Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical Jain-Roulston (J-R) model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors.

Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.

Sensitive determination of Cd and Pb by differential pulse stripping voltammetry with in situ bismuth-modified zeolite doped carbon paste electrodes

Here we investigated the analytical performances of the bismuth-modified zeolite doped carbon paste electrode (BiF-ZDCPE) for trace Cd and Pb analysis. The characteristics of bismuth-modified electrodes were improved greatly via addition of synthetic zeolite into carbon paste. To obtain high reproducibility and sensitivity, optimum experimental conditions for bismuth deposition Were Studied.

Solid-state sodium-selective sensors based on screen-printed Ag/AgCl reference electrodes

The potentiometric and AC impedance characteristics of all solid-state sodium-selective electrodes based on planar screen-printed Ag/AgCl electrodes are described. Two solid-state designs have been investigated. The first was based on the deposition of a sodium-selective PVC membrane directly on top of a screen-printed Ag/AgCl electrode, The second design included a NaCl doped hydrogel layer, between the PVC and Ag\AgCl layers. The hydrogel provides a mechanism to relieve any blockage to charge transfer occurring when PVC membranes are used directly on top of Ag/AgCl and also improves adhesion between the two layers. Results suggest the electrodes display Fast ion exchange kinetics, low noise and drift. The performance compares favorably to that of a conventional ion-selective electrode with internal filling solution.