945 resultados para Alignment.
Resumo:
There has been a recent surge of enthusiasm icithin tlie automotive industry to build closer supplier relationships idthin the area of product development. One concept deemed central to these relationships is the alignment of development processes between the collaborating organizations, an area that is expanded upon idthin this paper. We suggest that synchronization can be achieved through the four key steps of process standardization, knowledge sliaring, alignment of existing practices, and continuous elimination oftcaste idthin the joint development cycles. A methodology for implementing these stages is presented along idth the underlying prindples on which it is based - the importance of joint teamworking and multi-company involvement idthin the alignment process is higlilighted. © MCB University Press.
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A bottom-up technique for synthesizing transversely suspended zinc oxide nanowires (ZnO NWs) under a zinc nitrate (Zn(NO 3) 2· 6H 2O) and hexamethylenetetramine (HMTA, (CH 2) 6·N 4) solution within a microfabricated device is reported in this paper. The device consists of a microheater which is used to initially create an oxidized ZnO seed layer. ZnO NWs are then locally synthesized by the microheater and electrodes embedded within the devices are used to drive electric field directed horizontal alignment of the nanowires within the device. The entire process is carried out at low temperature. This approach has the potential to considerably simplify the fabrication and assembly of ZnO nanowires on CMOS compatible substrates, allowing for the chemical synthesis to be carried out under near-ambient conditions by locally defining the conditions for nanowire growth on a silicon reactor chip. © 2012 IEEE.
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The geometric alignment of turbulent strain-rate structures with premixed flames greatly influences the results of the turbulence-flame interaction. Here, the statistics and dynamics of this alignment are experimentally investigated in turbulent premixed Bunsen flames using high-repetition-rate stereoscopic particle image velocimetry. In all cases, the statistics showed that the most extensive principal strain-rate associated with the turbulence preferentially aligned such that it was more perpendicular than parallel to the flame surface normal direction. The mean turbulence-flame alignment differed between the flames, with the stronger flames (higher laminar flame speed) exhibiting stronger preferential alignment. Furthermore, the preferential alignment was greatest on the reactant side of the mean flame brush. To understand these differences, individual structures of fluid-dynamic strain-rate were tracked through time in a Lagrangian manner (i.e., by following the fluid elements). It was found that the flame surface affected the orientation of the turbulence structures, with the majority of structures rotating as they approached the flame such that their most extensive principal strain-rate was perpendicular to the flame normal. The maximum change in turbulent structure orientation was found to decrease with the strength of the structure, increase with the strength of the flame, and exhibit similar trends when the structure strength and flame strength were represented by a Karlovitz number. The mean change in orientation decreased from the unburnt to burnt side of the flame brush and appears to be influenced by the overall flame shape. © 2011 The Combustion Institute.
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Using in-plane electric fields, the electrical induction of the uniform lying helix (ULH) alignment in chiral nematic liquid crystals is reported. This process permits spontaneous induction of the ULH alignment to give an in-plane optic axis, without the need for complex processing. Flexoelectro-optic switching is subsequently obtained by holding the in-plane electrodes at a common voltage and addressing via a third, plane-parallel electrode on a second, or upper, substrate to give a field across the device in the viewing direction. For this device, in optimized bimesogenic materials, we demonstrate full intensity modulation and sub-millisecond response times at typical device temperatures. © 2012 American Institute of Physics.
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Calibration of a camera system is a necessary step in any stereo metric process. It correlates all cameras to a common coordinate system by measuring the intrinsic and extrinsic parameters of each camera. Currently, manual calibration of a camera system is the only way to achieve calibration in civil engineering operations that require stereo metric processes (photogrammetry, videogrammetry, vision based asset tracking, etc). This type of calibration however is time-consuming and labor-intensive. Furthermore, in civil engineering operations, camera systems are exposed to open, busy sites. In these conditions, the position of presumably stationary cameras can easily be changed due to external factors such as wind, vibrations or due to an unintentional push/touch from personnel on site. In such cases manual calibration must be repeated. In order to address this issue, several self-calibration algorithms have been proposed. These algorithms use Projective Geometry, Absolute Conic and Kruppa Equations and variations of these to produce processes that achieve calibration. However, most of these methods do not consider all constraints of a camera system such as camera intrinsic constraints, scene constraints, camera motion or varying camera intrinsic properties. This paper presents a novel method that takes all constraints into consideration to auto-calibrate cameras using an image alignment algorithm originally meant for vision based tracking. In this method, image frames are taken from cameras. These frames are used to calculate the fundamental matrix that gives epipolar constraints. Intrinsic and extrinsic properties of cameras are acquired from this calculation. Test results are presented in this paper with recommendations for further improvement.
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Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O 5 were obtained, where the electrodes consist of materials with low to high work function (Φ m, v a c from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study. © 2013 American Institute of Physics.
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Electron and hole conducting 10-nm-wide polymer morphologies hold great promise for organic electro-optical devices such as solar cells and light emitting diodes. The self-assembly of block-copolymers (BCPs) is often viewed as an efficient way to generate such materials. Here, a functional block copolymer that contains perylene bismide (PBI) side chains which can crystallize via π-π stacking to form an electron conducting microphase is patterned harnessing hierarchical electrohydrodynamic lithography (HEHL). HEHL film destabilization creates a hierarchical structure with three distinct length scales: (1) micrometer-sized polymer pillars, containing (2) a 10-nm BCP microphase morphology that is aligned perpendicular to the substrate surface and (3) on a molecular length scale (0.35-3 nm) PBI π-π-stacks traverse the HEHL-generated plugs in a continuous fashion. The good control over BCP and PBI alignment inside the generated vertical microstructures gives rise to liquid-crystal-like optical dichroism of the HEHL patterned films, and improves the electron conductivity across the film by 3 orders of magnitude. © 2013 American Chemical Society.
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Vector control provides stability and performance when applied to the brushless doubly-fed machine, however cross-coupling effects can arise between inputs and outputs. To address these effects, a procedure is proposed to both visualize and minimize the cross-coupling by means of steady-state mapping and a re-alignment of the dq reference frame. With this method implemented, gain-response tests show improved decoupling across the operating region. © 2013 EUCA.
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The development of infrastructure in major cities often involves tunnelling, which can cause damage to existing structures. Therefore, these projects require a careful prediction of the risk of settlement induced damage. The simplified approach of current methods cannot account for three-dimensional structural aspects of buildings, which can result in an inaccurate evaluation of damage. This paper investigates the effect of the building alignment with the tunnel axis on structural damage. A three-dimensional, phased, fully coupled finite element model with non-linear material properties is used as a tool to perform a parametric study. The model includes the simulation of the tunnel construction process, with the tunnel located adjacent to a masonry building. Three different type of settlements are included (sagging, hogging and a combination of them), with seven different increasing angles of the building with respect to the tunnel axis. The alignment parameter is assessed, based on the maximum occurring crack width, measured in the building. Results show a significant dependency of the final damage on the building and tunnel alignment.
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The valence band offset (VBO) of the InN/GaAs heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.94 +/- 0.23 eV. The conduction band offset is deduced from the known VBO value to be 1.66 +/- 0.23 eV, and a type-II band alignment forms at the InN/GaAs heterojunction. (C) 2008 American Institute of Physics.
Resumo:
Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitting diodes based on ZnO heterojunctions, but little is known of the band offsets of SiO2/ZnO. In this letter, energy band alignment of SiO2/ZnO interface was determined by x-ray photoelectron spectroscopy. The valence band offset Delta E-V of SiO2/ZnO interface is determined to be 0.93 +/- 0.15 eV. According to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V Delta E-C=E-g(SiO2)-E-g(ZnO)-Delta E-V, and taking the room-temperature band-gaps of 9.0 and 3.37 eV for SiO2 and ZnO, respectively, a type-I band-energy alignment of SiO2/ZnO interface with a conduction band offset of 4.70 +/- 0.15 eV is found. The accurate determination of energy band alignment of SiO2/ZnO is helpful for designing of SiO2/ZnO hybrid devices and is also important for understanding their carrier transport properties. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3204028]
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A 32-channel 50-GHz spaced arrayed-waveguide grating with our innovative configuration has been designed and fabricated. The performance of the device has been fully tested by using a tunable laser light source, optical power meter, and polarization controller. The insertion loss (IS) of the device is 4.2 similar to 7.4 dB. The crosstalk is about -28 clB. The IS uniformity is less than 3.2 dB. With our configuration, the performance of the device has been enhanced effectively and the difficulty in alignment process has been decreased obviously. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
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Time-resolved Kerr rotation measurement in the (Ga,Mn)As diluted magnetic semiconductor allows direct observation of the dynamical properties of the spin system of the magnetic ions and the spin-polarized holes. Experimental results show that the magnetic ions can be aligned by the polarized holes, and the time scales of spin alignment and relaxation take place in tens and hundreds of picoseconds, respectively. The Larmor frequency and effective g factor obtained in the Voigt geometry show an unusual temperature dependence in the vicinity of the Curie temperature due to the exchange coupling between the photoexcited holes and magnetic ions. Such a spin coherent precession can be amplified or destructed by two sequential excitation pulses with circularly copolarized or oppositely polarized helicity, respectively. (c) 2006 American Institute of Physics.