Test results of fault current limiter using YBCO tapes with shunt protection

A Fault Current Limiter (FCL) based on high temperature superconducting elements with four tapes in parallel were designed and tested in 220 V line for a fault current peak between 1 kA to 4 kA. The elements employed second generation (2G) HTS tapes of YBCO coated conductor with stainless steel reinforcement. The tapes were electrically connected in parallel with effective length of 0.4 m per element (16 elements connected in series) constituting a single-phase unit. The FCL performance was evaluated through over-current tests and its recovery characteristics under load current were analyzed using optimized value of the shunt protection. The projected limiting ratio achieved a factor higher than 4 during fault of 5 cycles without degradation. Construction details and further test results will be shown in the paper. © 2010 IOP Publishing Ltd.

Tetragonal to monoclinic phase transition observed during Zr anodisation

Plasma electrolytic oxidation (PEO) is a coating procedure that utilises anodic oxidation in aqueous electrolytes above the dielectric breakdown voltage to produce oxide coatings that have specific properties. These conditions facilitate oxide formation under localised high temperatures and pressures that originate from short-lived microdischarges at sites over the metal surface and have fast oxide volume expansion. Anodic ZrO2 films were prepared by subjecting metallic zirconium to PEO in acid solutions (H2C 2O4 and H3PO4) using a galvanostatic DC regime. The ZrO2 microstructure was investigated in films that were prepared at different charge densities. During the anodic breakdown, an important change in the amplitude of the voltage oscillations at a specific charge density was observed (i.e., the transition charge density (Q T)). We verified that this transition charge is a monotonic function of both the current density and temperature applied during the anodisation, which indicated that Q T is an intrinsic response of this system. The oxide morphology and microstructure were characterised using SEM and X-ray diffraction experiments (XRD) techniques. X-ray diffraction analysis revealed that the change in voltage oscillation was correlated with oxide microstructure changes during the breakdown process. © 2012 Springer-Verlag Berlin Heidelberg.

Fault current limiter using transformer and modular device of YBCO coated conductor

In this work, we report on the evaluation of a superconducting fault current limiter (SFCL). It is consisted of a modular superconducting device combined with a short-circuited transformer with a primary copper winding connected in series to the power line and the secondary side short-circuited by the superconducting device. The basic idea is adding a magnetic component to contribute to the current limitation by the impedance reflected to the line after transition of the superconducting device. The evaluation tests were performed with a prospective current up to 2 kA, with the short-circuited transformer of 2.5 kVA, 220 V/660 V connected to a test facility of 100 kVA power capacity. The resistive SFCL using a modular superconducting device was tested without degradation for a prospective fault current of 1.8 kA, achieving the limiting factor 2.78; the voltage achieved 282 V corresponding to an electric field of 11 V/m. The test performed with the combined SFCL (xsuperconducting device + transformer) using series and toroidal transformers showed current limiting factor of 3.1 and 2 times, respectively. The test results of the combined SFCL with short-circuited transformer showed undesirable influence of the transformer impedance, resulting in reduction of the fault current level. © 2002-2011 IEEE.

The effects of pinning on critical currents of superconducting films

Using molecular dynamics simulations, we analyze the effects of artificial periodic arrays of pinning sites on the critical current of superconducting thin films as a function of vortex density. We analyze two types of periodic pinning array: hexagonal and Kagomé. For the Kagome pinning network we make calculations using two directions of transport current: along and perpendicular to the main axis of the lattice. Our results show that the hexagonal pinning array presents higher critical currents than the Kagomé and random pinning configuration for all vortex densities. In addition, the Kagomé networks show anisotropy in their transport properties. © 2012 Springer Science+Business Media, LLC.

Obtenção de filmes finos supercondutores do sistema BSCCO dopados com prata

Pós-graduação em Ciência dos Materiais - FEIS

Influência dos defeitos cristalinos nas propriedades dielétricas e não-ôhmicas do 'CA' 'CU IND.3' 'TI IND.4' 'O IND.12'(CCTO)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Análise eletromagnética de cabos OPGW utilizando métodos numérico e analítico

Este trabalho apresenta o estudo eletromagnético de cabos OPGW (Optical Ground Wire) os quais têm dupla função: de pára-raios para linhas de transmissão de alta tensão e de canal de comunicação através de fibras ópticas embutidas na estrutura do cabo. Descargas atmosféricas ou curtos-circuitos podem comprometer a integridade do cabo, devido ao aquecimento nas regiões onde há maior concentração de corrente. Para a análise deste problema foram feitos cálculos eletromagnéticos relacionando-os aos efeitos térmicos no cabo. Nesta análise foram consideradas três diferentes geometrias: o modelo de cabo real, o modelo de cabo com camadas homogêneas e o modelo de cabo com uma camada modificada; esta modificação está relacionada à forma geométrica dos fios da armação do cabo. As ferramentas utilizadas em tal estudo foram o software comercial FEMLAB Multiphysics, baseado no método dos elementos finitos, e um método analítico desenvolvido a partir das equações de Maxwell no domínio da freqüência, que foi implementado utilizando o software MATLAB. Os principais resultados deste trabalho são gráficos de distribuição de densidade de corrente na seção reta do cabo para diferentes freqüências, estudo do efeito pelicular e do efeito de proximidade entre os condutores do cabo.

Estudo das propriedades de pastilhas e fios supercondutores do sistema BSCCO dopados com compostos nanoparticulados de cálcio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

INVESTIGATION INTO CURRENT EFFICIENCY FOR PULSE ELECTROCHEMICAL MACHINING OF NICKEL ALLOY

INVESTIGATION INTO CURRENT EFFICIENCY FOR PULSE ELECTROCHEMICAL MACHINING OF NICKEL ALLOY Yu Zhang, M.S. University of Nebraska, 2010 Adviser: Kamlakar P. Rajurkar Electrochemical machining (ECM) is a nontraditional manufacturing process that can machine difficult-to-cut materials. In ECM, material is removed by controlled electrochemical dissolution of an anodic workpiece in an electrochemical cell. ECM has extensive applications in automotive, petroleum, aerospace, textile, medical, and electronics industries. Improving current efficiency is a challenging task for any electro-physical or electrochemical machining processes. The current efficiency is defined as the ratio of the observed amount of metal dissolved to the theoretical amount predicted from Faraday’s law, for the same specified conditions of electrochemical equivalent, current, etc [1]. In macro ECM, electrolyte conductivity greatly influences the current efficiency of the process. Since there is a certain limit to enhance the conductivity of the electrolyte, a process innovation is needed for further improvement in current efficiency in ECM. Pulse electrochemical machining (PECM) is one such approach in which the electrolyte conductivity is improved by electrolyte flushing in pulse off-time. The aim of this research is to study the influence of major factors on current efficiency in a pulse electrochemical machining process in macro scale and to develop a linear regression model for predicting current efficiency of the process. An in-house designed electrochemical cell was used for machining nickel alloy (ASTM B435) by PECM. The effects of current density, type of electrolyte, and electrolyte flow rate, on current efficiency under different experimental conditions were studied. Results indicated that current efficiency is dependent on electrolyte, electrolyte flow rate, and current density. Linear regression models of current efficiency were compared with twenty new data points graphically and quantitatively. Models developed were close enough to the actual results to be reliable. In addition, an attempt has been made in this work to consider those factors in PECM that have not been investigated in earlier works. This was done by simulating the process by using COMSOL software. However, it was found that the results from this attempt were not substantially different from the earlier reported studies.

Electronic transport in the heavy fermion superconductors UPd 2 Al 3 and UNi 2 Al 3

This work addresses the electronical properties of the superconductors UPd2Al3 and UNi2Al3 on the basis of thin film experiments. These isotructural compounds are ideal candiates to study the interplay of magnetism and superconductivity due to the differences of their magnetically ordered states, as well as the experimental evidence for a magnetic pairing mechanism in UPd2Al3. Epitaxial thin film samples of UPd2Al3 and UNi2Al3 were prepared using UHV Molecular Beam Epitaxy (MBE). For UPd2Al3, the change of the growth direction from the intrinsic (001) to epitaxial (100) was predicted and sucessfully demonstrated using LaAlO3 substrates cut in (110) direction. With optimized deposition process parameters for UPd2Al3 (100) on LaAlO3 (110) superconducting samples with critical temperatures up to Tc = 1.75K were obtained. UPd2Al3-AlOx-Ag mesa junctions with superconducting base electrode were prepared and shown to be in the tunneling regime. However, no signatures of a superconducting density of states were observed in the tunneling spectra. The resistive superconducting transition was probed for a possible dependence on the current direction. In contrast to UNi2Al3, the existence of such feature was excluded in UPd2Al3 (100) thin films. The second focus of this work is the dependence of the resisitive transition in UNi2Al3 (100) thin films on the current direction. The experimental fact that the resisitive transition occurs at slightly higher temperatures for I║a than for I║c can be explained within a model of two weakly coupled superconducting bands. Evidence is presented for the key assumption of the two-band model, namely that transport in and out of the ab-plane is generated on different, weakly coupled parts of the Fermi surface. Main indications are the angle dependence of the superconducting transition and the dependence of the upper critical field Bc2 on current and field orientation. Additionally, several possible alternative explanations for the directional splitting of the transition are excluded in this work. An origin due to scattering on crystal defects or impurities is ruled out, likewise a relation to ohmic heating or vortex dynamics. The shift of the transition temperature as function of the current density was found to behave as predicted by the Ginzburg-Landau theory for critical current depairing, which plays a significant role in the two-band model. In conclusion, the directional splitting of the resisitive transition has to be regarded an intrinsic and unique property of UNi2Al3 up to now. Therefore, UNi2Al3 is proposed as a role model for weakly coupled multiband superconductivity. Magnetoresistance in the normalconducting state was measured for UPd2Al3 and UNi2Al3. For UNi2Al3, a negative contribution was observed close to the antiferromagnetic ordering temperature TN only for I║a, which can be associated to reduced spin-disorder scattering. In agreement with previous results it is concluded that the magnetic moments have to be attributed to the same part of the Fermi surface which generates transport in the ab-plane.

Adiabatic and local approximations for the kohn-sham potential in the hubbard model

We obtain the exact time-dependent Kohn-Sham potentials Vks for 1D Hubbard chains, driven by a d.c. external field, using the time-dependent electron density and current density obtained from exact many-body time-evolution. The exact Vxc is compared to the adiabatically-exact Vad-xc and the “instantaneous ground state” Vigs-xc. The effectiveness of these two approximations is analyzed. Approximations for the exchange-correlation potential Vxc and its gradient, based on the local density and on the local current density, are also considered and both physical quantities are observed to be far outside the reach of any possible local approximation. Insight into the respective roles of ground-state and excited-state correlation in the time-dependent system, as reflected in the potentials, is provided by the pair correlation function.

In-situ electrical, mechanical and electrochemical characterizations of one-dimensional nanostructures

One-dimensional nanostructures initiated new aspects to the materials applications due to their superior properties compared to the bulk materials. Properties of nanostructures have been characterized by many techniques and used for various device applications. However, simultaneous correlation between the physical and structural properties of these nanomaterials has not been widely investigated. Therefore, it is necessary to perform in-situ study on the physical and structural properties of nanomaterials to understand their relation. In this work, we will use a unique instrument to perform real time atomic force microscopy (AFM) and scanning tunneling microscopy (STM) of nanomaterials inside a transmission electron microscopy (TEM) system. This AFM/STM-TEM system is used to investigate the mechanical, electrical, and electrochemical properties of boron nitride nanotubes (BNNTs) and Silicon nanorods (SiNRs). BNNTs are one of the subjects of this PhD research due to their comparable, and in some cases superior, properties compared to carbon nanotubes. Therefore, to further develop their applications, it is required to investigate these characteristics in atomic level. In this research, the mechanical properties of multi-walled BNNTs were first studied. Several tests were designed to study and characterize their real-time deformation behavior to the applied force. Observations revealed that BNNTs possess highly flexible structures under applied force. Detailed studies were then conducted to understand the bending mechanism of the BNNTs. Formations of reversible ripples were observed and described in terms of thermodynamic energy of the system. Fracture failure of BNNTs were initiated at the outermost walls and characterized to be brittle. Second, the electrical properties of individual BNNTs were studied. Results showed that the bandgap and electronic properties of BNNTs can be engineered by means of applied strain. It was found that the conductivity, electron concentration and carrier mobility of BNNTs can be tuned as a function of applied stress. Although, BNNTs are considered to be candidate for field emission applications, observations revealed that their properties degrade upon cycles of emissions. Results showed that due to the high emission current density, the temperature of the sample was increased and reached to the decomposition temperature at which the B-N bonds start to break. In addition to BNNTs, we have also performed in-situ study on the electrochemical properties of silicon nanorods (SiNRs). Specifically, lithiation and delithiation of SiNRs were studied by our STM-TEM system. Our observations showed the direct formation of Li22Si5 phases as a result of lithium intercalation. Radial expansion of the anode materials were observed and characterized in terms of size-scale. Later, the formation and growth of the lithium fibers on the surface of the anode materials were observed and studied. Results revealed the formation of lithium islands inside the ionic liquid electrolyte which then grew as Li dendrite toward the cathode material.

Porous silicon technology for integrated microsystems

With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2µm to 6µm have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (~200 degrees C) and thick/soft bonding layers (~6µm) have been achieved by In-Au bondi ng technology, which is able to compensate the potentially rough surface on the porous silicon sample without introducing significant thermal stress. The application of the porous silicon material in micro systems has been demonstrated in a micro gas chromatograph system by two indispensable components: an integrated vapor source and an inlet filter, wherein porous silicon performs the basic functions of porous media: wicking and filtration. By utilizing a macro porous silicon wick, the calibration vapor source was able to produce a uniform and repeatable vapor generation for n-decane with less than a 0.1% variation in 9 hours, and less than a 0.5% variation in rate over 7 days. With engineered porous silicon membranes the inlet filter was able to show a depth filtration with nearly 100% collection efficiency for particles larger than 0.3µm in diameter, a low pressure-drop of 523Pa at 20sccm flow rate, and a filter capacity of 500µg/cm2.

Maximum principle preserving high order schemes for convection-dominated diffusion equations

The maximum principle is an important property of solutions to PDE. Correspondingly, it's of great interest for people to design a high order numerical scheme solving PDE with this property maintained. In this thesis, our particular interest is solving convection-dominated diffusion equation. We first review a nonconventional maximum principle preserving(MPP) high order finite volume(FV) WENO scheme, and then propose a new parametrized MPP high order finite difference(FD) WENO framework, which is generalized from the one solving hyperbolic conservation laws. A formal analysis is presented to show that a third order finite difference scheme with this parametrized MPP flux limiters maintains the third order accuracy without extra CFL constraint when the low order monotone flux is chosen appropriately. Numerical tests in both one and two dimensional cases are performed on the simulation of the incompressible Navier-Stokes equations in vorticity stream-function formulation and several other problems to show the effectiveness of the proposed method.

The Effect of the Fe2: Fe3 Ratio upon the Current Efficiency in the Electrolysis of a Copper Sulfate Solution Containing Iron Sulfate

In the treatment of copper ores by hydro-electro-metallurgical methods, not only is copper deposited, but other metals are also dissolved. In practice it has been found* that iron, under certain conditions, causes the copper to deposit on the cathode as a nonadherent precipitate and also that the iron in solution causes a great decrease in current efficiency, es­pecially when the electrolysis is conducted by operating with a higher current density at the cathode than at the anode. The present investigation deals with the effects of the two valences of iron on the current efficiency and endeavors to determine whether or not there is a ratio of the two at which point the efficiency becomes zero or approaches it.