Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy

Self-assembled InAs nanostructures on (0 0 1) InP substrate have been grown by molecular beam epitaxy (MBE) and evaluated by transmission electron microscopy (TEM) and photoluminescence (PL). It is found that the morphologies and PL properties of InAs nanostructures depend strongly on the growth condition. For the same buffer layer, elongated InAs quantum wires (QWRs) and no isotropic InAs quantum dots (QDs) can be obtained using different growth conditions. At the same time, for InAs quantum dots, PL spectra also show several emission peaks related to different islands size. Theoretical calculation indicated that there are size quantization effects in InAs islands. (C) 2001 Elsevier Science B.V. All rights reserved.

Residual donors in undoped LEC InP

Undoped liquid encapsulated Czochralski (LEC) InP samples have been studied by Hall effect, glow discharge mass spectroscopy (GDMS) and infrared absorption spectroscopy. A systematic discrepancy has been found between the Han electron concentration and net donor concentration measured by GDMS. The electron concentration is always higher than the net shallow donor concentration by about (3-6)x10(15)cm(-3). A hydrogen indium vacancy complex donor defect VInH4 was detected regularly by infrared absorption spectroscopy in all undoped LEC InP samples. The fact can be explained by taking into account the existence of the donor defect in as-grown undoped LEC-InP.

Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As In0.53Ga0.47As, and (In0.52Al0.48As)(2)/(In(0.53)Ga(0.47)AS)(2)-short-period-lattice matrixes on InP (001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x4 direction in the 2x4 reconstructed (001) surface as revealed with high energy electron diffraction (RHEED). Alignment of quantum wires in a multilayer structure depends on the composition of spacer layers.

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.

Hybrid integration and packaging of grating-coupled silicon photonics

This thesis covers both the packaging of silicon photonic devices with fiber inputs and outputs as well as the integration of laser light sources with these same devices. The principal challenge in both of these pursuits is coupling light into the submicrometer waveguides that are the hallmark of silicon-on-insulator (SOI) systems. Previous work on grating couplers is leveraged to design new approaches to bridge the gap between the highly-integrated domain of silicon, the Interconnected world of fiber and the active region of III-V materials. First, a novel process for the planar packaging of grating couplers with fibers is explored in detail. This technology allows the creation of easy-to-use test platforms for laser integration and also stands on its own merits as an enabling technology for next-generation silicon photonics systems. The alignment tolerances of this process are shown to be well-suited to a passive alignment process and for wafer-scale assembly. Furthermore, this technology has already been used to package demonstrators for research partners and is included in the offerings of the ePIXfab silicon photonics foundry and as a design kit for PhoeniX Software’s MaskEngineer product. After this, a process for hybridly integrating a discrete edge-emitting laser with a silicon photonic circuit using near-vertical coupling is developed and characterized. The details of the various steps of the design process are given, including mechanical, thermal, optical and electrical steps. The interrelation of these design domains is also discussed. The construction process for a demonstrator is outlined, and measurements are presented of a series of single-wavelength Fabry-Pérot lasers along with a two-section laser tunable in the telecommunications C-band. The suitability and potential of this technology for mass manufacture is demonstrated, with further opportunities for improvement detailed and discussed in the conclusion.

Novel processes, test structures and characterisation for future germanium technologies

In order to widely use Ge and III-V materials instead of Si in advanced CMOS technology, the process and integration of these materials has to be well established so that their high mobility benefit is not swamped by imperfect manufacturing procedures. In this dissertation number of key bottlenecks in realization of Ge devices are investigated; We address the challenge of the formation of low resistivity contacts on n-type Ge, comparing conventional and advanced rapid thermal annealing (RTA) and laser thermal annealing (LTA) techniques respectively. LTA appears to be a feasible approach for realization of low resistivity contacts with an incredibly sharp germanide-substrate interface and contact resistivity in the order of 10 -7 Ω.cm2. Furthermore the influence of RTA and LTA on dopant activation and leakage current suppression in n+/p Ge junction were compared. Providing very high active carrier concentration > 1020 cm-3, LTA resulted in higher leakage current compared to RTA which provided lower carrier concentration ~1019 cm-3. This is an indication of a trade-off between high activation level and junction leakage current. High ION/IOFF ratio ~ 107 was obtained, which to the best of our knowledge is the best reported value for n-type Ge so far. Simulations were carried out to investigate how target sputtering, dose retention, and damage formation is generated in thin-body semiconductors by means of energetic ion impacts and how they are dependent on the target physical material properties. Solid phase epitaxy studies in wide and thin Ge fins confirmed the formation of twin boundary defects and random nucleation growth, like in Si, but here 600 °C annealing temperature was found to be effective to reduce these defects. Finally, a non-destructive doping technique was successfully implemented to dope Ge nanowires, where nanowire resistivity was reduced by 5 orders of magnitude using PH3 based in-diffusion process.

Antibody Based Diagnostic for Detection Of Vibrios and their Biological Control using Antagonistic Bacteria in Macrobrachium Rosenbergii Larval Rearing Systems

The main objective of the work undertaken here was to develop an appropriate microbial technology to protect the larvae of M.rosenbergii in hatchery from vibriosis. This technology precisely is consisted of a rapid detection system of vibrios and effective antagonistic probiotics for the management of vibrios. The present work was undertaken with the realizations that to stabilize the production process of commercial hatcheries an appropriate, comprehensive and fool proof technology is required primarily for the rapid detection of Vibrio and subsequently for its management. Nine species of Vibrio have been found to be associated with larvae of M. rosenbergii in hatchery. Haemolytic assay of the Vibrio and Aeromonas on prawn blood agar showed that all isolates of V. alginolyticus and Aeromonas sp., from moribund, necrotized larve were haemolytic and the isolates of V.cholerae, V.splendidus II, V.proteolyticus and V.fluvialis from the larvae obtained from apparently healthy larval rearing systems were non-haemolytic. Hydrolytic enzymes such as lipase, chitinase and gelatinase were widespread amongst the Vibrio and Aeromonas isolates. Dominance of V.alginolyticus among the isolates from necrotic larvae and the failure in isolating them from rearing water strongly suggest that they infect larvae and multiply in the larval body and cause mortality in the hatchery. The observation suggested that the isolate V. alginolyticus was a pathogen to the larvae of M.rosenbergii. To sum up, through this work, nine species of Vibrio and genus Aeromonas associated with M.rosenbergii larval rearing systems could be isolated and segregated based on the haemolytic activity and the antibodies (PA bs) for use in diagnosis or epidemiological studies could be produced, based on a virulent culture of V.alginolyticus. This could possibly replace the conventional biochemical tests for identification. As prophylaxis to vibriosis, four isolates of Micrococcus spp. and an isolate of Pseudomonas sp. could be obtained which could possibly be used as antagonistic probiotics in the larval rearing system of M.rosenbergii.

Un encuentro con John Dewey.

Cuadernos Fies, 1

Profesorado : miradas y espejos.

Cuadernos Fies, 2

Tu futuro profesional. Libro del profesor-tutor.

Contiene dos volúmenes: v. 1, módulos I y II; v. 2, módulos III y IV

Investigation of cadmium alternatives in thin-film coatings - art. no. 62860C

The health risks associated with the inhalation or ingestion of cadmium are well documented([1,2]). During the past 18 years, EU legislation has steadily been introduced to restrict its use, leaving a requirement for the development of replacement materials. This paper looks at possible alternatives to various cadmium II-VI dielectric compounds used in the deposition of optical thin-films for various opto-electronic devices. Application areas of particular interest are for infrared multilayer interference filter fabrication and solar cell industries, where cadmium-based coatings currently find widespread use. The results of single and multilayer designs comprising CdTe, CdS, CdSe and PbTe deposited onto group IV and II-VI materials as interference filters for the mid-IR region are presented. Thin films of SnN, SnO2, SnS and SnSe are fabricated by plasma assisted CVD, reactive RF sputtering and thermal evaporation. Examination of these films using FTIR spectroscopy, SEM, EDX analysis and optical characterisation methods provide details of material dispersion, absorption, composition, refractive index, energy band gap and layer thicknesses. The optimisation of deposition parameters in order to synthesise coatings with similar optical and semiconductor properties as those containing cadmium has been investigated. Results of environmental, durability and stability trials are also presented.

Histomorphologic evaluation of Ti-13Nb-13Zr alloys processed via powder metallurgy. A study in rabbits

This study presents the in-vivo evaluation of Ti-13Nb-13Zr alloy implants obtained by the hydride route via powder metallurgy. The cylindrical implants were processed at different sintering and holding times. The implants` were characterized for density, microstructure (SEM), crystalline phases (XRD), and bulk (EDS) and surface composition (XPS). The implants were then sterilized and surgically placed in the central region of the rabbit`s tibiae. Two double fluorescent markers were applied at 2 and 3 weeks, and 6 and 7 weeks after implantation. After an 8-week healing period, the implants were retrieved, non-decalcified section processed, and evaluated by electron, UV light (fluorescent labeling), and light microscopy (toluidine blue). BSE-SEM showed close contact between bone and implants. Fluorescent labeling assessment showed high bone activity levels at regions close to the implant surface. Toluidine blue staining revealed regions comprising osteoblasts at regions of newly forming/formed bone close to the implant surface. The results obtained in this study support biocompatible and osseoconductive properties of Ti-13Nb-13Zr processed through the hydride powder route. (c) 2007 Published by Elsevier B.V.

Construção do teste de aptidão criativa - TAC: forma experimental

Este trabalho tem por finalidade a construção de um instrumento psicológico de medida de comportamentos criativos, o Teste de Aptidão Criativa - TAC. A construção do TAC é justificada de um lado, por sua utilidade; sobretudo para o orientador profissional e psicólogo escolar e de outro; pela inexistência no Brasil; em particular no Nordeste, de instrumentos de medida similar. A formulação do problema e seu contexto são descritos logo no início do trabalho, bem como, a fundamentação teórica. Neste particular, enfatizou-se o enfoque psicológico da criatividade v em suas abordagens personológica e cognitiva. Atenção especial foi dada ao estudo do "modelo da estrutura do intelecto" de J. P. Guilford, suporte teórico do TAC. O teste de Aptidão Criativa é apresentado em todas as etapas de sua construção , desde a forma pré-piloto ç à piloto e à experimental, salientando-se seus respectivos subtestes figural e verbal. Ilustrações dos itens, bem como, das formas do teste são também apresentadas para melhor compreensão do texto. Em prosseguimento descreve- se uma pesquisa empírica realizada com o TAC, cujas hipóteses operacionais visam comprovar sua validade de constrito sua fidedignidade. A população foi constituída de alunos, de ambos os sexos, que cursaram em 1977 a 8a. série do 1º grau, de escolas públicas ou particulares; do município do Recife. O trabalho descreve detalhadamente a determinação da amostra, os instrumentos utilizados bem como os critérios de avaliação dos dados. O tratamento estatístico consistiu em medidas de tendência ceutra e de variabilidade; análise fatorial (técnica dos componentes principais-solução Varimax) para verificação da validade de construto. Os resultados obtidos, pela análise fatorial, demonstraram a presença de três fatores: um denominado C e interpretado como Convergente e dois, mensuráveis pelo TAC (conforme mostram as cargas fatoriais) que foram chamados de F (Fluência e Flexibilidade) e 0 Originalidade. O índice de homogeneidade calculado pelo “ de Cronbach" da característica originalidade entendida como essencial para a criatividade foi de 0,72. Tal resultado permite afirmar que na amostra testada o TAC , neste aspecto, apresenta fidedignidade significativa. Uma análise de regressão múltipla por passos foi levada a efeito, visando a identificação dos itens que mais contribuíram para explicação do escore total. Os resultados permitiram apontar uma melhor forma para o TAC figural constituída pelos itens I , II, V, VI , VII e VIII, os quais comporão a forma definitiva do TAC. Calculou-se também o estatístico Z do "Teste de urna Amostra de Kolmogorou para verificação da normalidade da distribuição das três características que o de medir: Fluência, Flexibilidade e Originalidade. Explicita-se ainda uma crítica à técnica de computação das respostas do TAC em face do índice de flexibilidade e propõe-se a realização de estudos, que permitam a formulação de novos procedimentos para um tratamento mais adequado das respostas aos estímulos do teste. Sugere-se também um estudo teórico sistemático de maior profundidade sobre os pontos de convergência entre as teorias psicológicas que tratam o tema para uma melhor compreensão da natureza e dinâmica do comportamento criativa. Propõe-se ainda a continuidade da pesquisa empírica que deu origem a este trabalho, tendo por objetivo imediato a padronização do TAC, de modo a poder ser ele instrumento útil ao psicólogo, na prática da psicologia aplicada.

Procoagulant state after raloxifene therapy in postmenopausal women

AZEVEDO, George Dantas de et al. Procoagulant state after raloxifene therapy in postmenopausal women. Fertility and Sterility, Estados Unidos, v.84, n.6, p.1680-1684, 2005

On the release of metronidazole from natural rubber latex membranes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)