Spectroscopic properties of Nd3+-doped high silica glass prepared by sintering porous glass

A new kind of Nd3+, -doped high silica glass (SiO2 > 96% (mass fraction)) was obtained by sintering porous glass impregnated with Nd3+, ions. The absorption and luminescence properties of high silica glass doped with different Nd3+, concentrations were studied. The intensity parameters Omega(t) (t = 2, 4, 6), spontaneous emission probability, fluorescence lifetime, radiative quantum efficiency, fluorescence branching ratio, and stimulated emission cross section were calculated using the Judd-Ofelt theory. The optimal Nd3+ concentration in high silica glass was 0.27% (mole fraction) because of its high quantum efficiency and emission intensity. By comparing the spectroscopic parameters with other Nd3+ doped oxide glasses and commercial silicate glasses, the Nd3+-doped high silica glasses are likely to be a promising material used for high power and high repetition rate lasers.

High quantum efficiency and high concentration erbium-doped silica glasses fabricated by sintering nanoporous glasses

A new method was used to prepare erbium-doped high silica (SiO2% > 96%) glasses by sintering nanoporous glasses. The concentration of erbium ions in high silica glasses can be considerably more than that in silica glasses prepared by using conventional methods. The fluorescence of 1532 nm has an FWHM (Full Wave at Half Maximum) of 50 nm, wider than 35 nm of EDSFA (erbium-doped silica fiber amplifer), and hence the glass possesses potential application in broadband fiber amplifiers. The Judd-Ofelt theoretical analysis reflects that the quantum efficiency of this erbium-doped glass is about 0.78, although the erbium concentration in this glass (6 x 103) is about twenty times higher than that in silica glass. These excellent characteristics of Er-doped high silica glass will be conducive to its usage in optical amplifiers and microchip lasers.

Effect of La2O3 on microstructure and transmittance of transparent alumina ceramics

Optically transparent alumina ceramics were fabricated by conventional process and sintered without pressure in H-2 atmosphere. The results indicate that relative densities of alumina specimens increase to theoretical densities (T. D.) with increasing content of La2O3. With increasing holding time during sintering, much less pores and larger grains were found in the sintered alumina samples. Higher transmittance was achieved in alumina codoped with MgO and La2O3 as compared with that doped with MgO only. The total-transmittance of alumina sample is up to 86% at a wavelength range of 300 - 800 nm.

Spectral hole-burning of Eu3+: Y2SiO5 crystal at 579.62 mm

By using an Ar+ ion laser, a tunable Rh 6G dye laser(Linewidth : 0.5 cm(-1)) and a Coherent 899-21 dye laser as light sources and using a monochromator and a phase-locking amplifier, the optical properties of Eu3+ : Y2SiO5 crystal were detected. Persistent spectral hole burning (PSHB) were also observed in (5)Do-(7)Fo transition in the crystal at the temperature of 16 K. For 15 mW dye laser (Wavelength : 579.62 nm) burning the crystal for 0.1 s a spectral hole with about 80 MHz hole width were detected and the hole can been keep for longer than 10 h.

Effect of La3+ on microwave dielectric properties of (Pb0.45Ca0.55) (Fe0.5Nb0.5)O-3 ceramics

In this work, microwave dielectric properties of A-site substitution by La3+ in (Pb0.45Ca0.55) (Fe0.5Nb0.5) 03 system were investigated. Microwave dielectric properties of A-site charge unbalance substitution of [(Pb0.45Ca0.55)(1-x) La-x] (Fe0.5Nb0.5)O-3(+) (P45CLFN) were improved because the solid solution of small amount of surplus La3+ with (Pb, Ca)(2+) could eliminate oxygen vacancies, and the formation of secondary phase (pyrochlore) was also caused by surplus La3+. The decreasing of dielectric constant with the increase of La3+ content is due to the formation of pyrochlore. The grain size is changed slightly and Q(f) values (7000 similar to 7300 GHz) are almost unchanged at x = 0.02 similar to 0.10, but the temperature coefficient of resonant frequency (TCF) are increased and changed from negative to positive. TCF is zero at x 0.075 with Q(f) = 7267 GHz and K = 89. TCF of all specimens are within +/- 5 x 10(-6)degrees C-1.

Spectroscopic properties of Ce : YAP scintillation crystal grown by temperature gradient technique

Spectroscopic properties of Ce-doped yttrium orthoaluminate (Ce:YAlO3 or Ce:YAP) crystals grown by temperature gradient technique (TGT) were investigated, and the effects of the growth conditions on the properties were analyzed.. Methods of optical absorption (OA), photoluminescence (PL), photoluminescence decay (PLD), X-ray excited luminescence (XL) and cathodeluminescence (CL) were used in these investigations. The results showed that the absorption band peak at 202, 394 and 532 nm originated from F and F+ color center induced by the weak reducing growth atmosphere, green emission band near 500 ran derived from Ce3+ -Ce3+ pairs and band at 650 similar to 850 run from some unintentional impurity in crystals.

Investigação do efeito magnetocalórico convencional e anisotrópico no sistema Er(1-y)Ho(y)N

O efeito magnetocalórico, base da refrigeração magnética, é caracterizado por duas quantidades: a variação isotérmica da entropia (ΔST) e a variação adiabática da temperatura (ΔTad) as quais podem ser obtidas sob variações na intensidade de um campo magnético aplicado. Em sistemas que apresentam anisotropia magnética, pode‐se definir o efeito magnetocalórico anisotrópico, o qual, por definição, é calculado através da variação na direção de aplicação de um campo magnético cuja intensidade se mantém fixa. Nos materiais de nosso interesse, o efeito magnetocalórico é estudado teoricamente partindo de um hamiltoniano modelo que leva em conta a rede magnética (que pode ser composta por diversas sub-redes magnéticas acopladas), rede cristalina e a dinâmica dos elétrons de condução. No hamiltoniano magnético são consideradas as interações de troca, Zeeman e campo cristalino (esta ultima responsável pela anisotropia magnética). Recentemente, estudamos o efeito magnetocalórico convencional e o efeito magnetocalórico anisotrópico nos compostos mononitretos com terras-raras, a saber: Ho(y)Er(1-y)N para as concentrações y= 0,1,0.5 e 0.75. Comparações entre nossos resultados teóricos e os dados experimentais para o EMC foram bastante satisfatórias [3,9]. Além disso, diversas predições teóricas como a existência de uma fase ferrimagnética no sistema Ho(y)Er(1-y)N (para a concentração y=0.5) e reorientações de spin nas sub-redes do Ho e Er foram feitas [25].

新疆紫草细胞悬浮培养生产紫草宁衍生物的动态测定机理化因子调控

本文在本实验室提供的新疆紫草愈伤组织高产系A1的基础上，采用二步培养法，进行摇瓶悬浮培养，分别在生长及生产培养基中测定了细胞生长，次生产物合成，培养基的C源（蔗糖）消耗，溶氧，电导率和pH值的动态变化曲线，确定了各动态曲线之间的关系，为进一步的放大培养提供了参考依据。同时，还测定了与细胞生长密切相关的过氧化物酶及与产物合成密切相关的苯丙氨酸解氨酶(PAL)的活性的动态变化曲线，进一步将宏观参数的动态变化与微观参数的动态变化联系起来。 本文还对不同理化因子对生产培养基中悬浮培养的细胞的生长及紫草宁衍生物合成的影响进行了研究。结果表明：过高或过低的供氧水平均不利于细胞的生长及产物的合成;C源及N源有较好的协同作用，适当地提高C源及N源的水平能明显提高紫草宁衍生物的产量：接种前往培养基里加入一定量的前体苯丙氨酸( Phe)，能明显提高紫草宁衍生物的产量，而在培养中期添加则有一定的负致应;一定量的拜土及琼脂(agar)的添加，对产物的合成均具有正效应，并且作用大小和细胞的生理状态有关。高密度培养的研究表明，在合适的接种量和培养基浓度下，适当提高溶氧，较大幅度地提高产量是有可能的，这还有待于进一步的研究验证。

稀土元素生物效应的蛋白质组学研究

蛋白质组学是研究细胞内全部蛋白的动态表达及其相互关系的新兴学科，是功能基因组学研究的重要组成部分和战略制高点，广泛应用于生命科学的各个领域，研究对象涵盖微生物、动物和植物等。 　　稀土元素（rare earth elements），亦称镧系元素（lanthanides），是性质相似的15种金属元素。随着稀土元素在工业、农牧业和医疗等领域的应用日益深入，它们对生物体的作用机制亟待研究。生物固氮作用为生命世界提供75%的绿色氮源，根瘤菌是重要的固氮微生物，具有基因组结构简单、培养周期短等特点。酿酒酵母是与人类关系最密切的一种酵母，不仅因为传统上其用于制作食品及酿酒，而且是现代分子生物学和细胞生物学中的真核模式生物。为了全面地了解稀土元素对细胞的作用，我们运用高分辨率的蛋白质双向电泳分离技术和高通量的蛋白质质谱分析手段以及生物信息学等方法，分析了稀土元素钆（Gadolinium，Gd）在原核生物费氏中华根瘤菌（Sinorhizobium fredii）USDA205和真核生物酿酒酵母（Saccharomyces cerevisiae）YM4271的生物效应。 　　结果表明，经1mM Gd(NO3)3处理12小时后，费氏中华根瘤菌USDA205中 22个蛋白质表达有差异。这些蛋白质可根据功能分为8类，包括转运蛋白、胁迫相关蛋白、代谢相关蛋白等。其中13个蛋白质表达量增加，9个蛋白质表达量下降。膜蛋白在差异蛋白中占有很大比重。另外，我们分析了不同浓度的钆处理后蛋白质表达的变化情况，发现蛋白质组的变化是与处理浓度密切相关的。研究中还发现同种浓度的钆与另一种稀土元素铒（Erbium，Er）相比，离子半径较小的铒离子对根瘤菌的抑制作用更加明显。 　　比较不同浓度的钆对酿酒酵母YM4271的影响，发现酵母对稀土元素的反应不及根瘤菌敏感，对数生长初期的酵母经钆处理12小时或24小时后均无显著变化。 　　本研究首次用蛋白质组学的方法研究稀土元素对微生物的作用，鉴定了一些有价值的蛋白质，并得到了它们的表达特点和相关数据，为更好地理解稀土元素的生物效应提供了有力的分子生物学证据。 　　

Electrical properties and electroluminescence of 4H-SiC p-n junction diodes

Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal air-cooled quartz tube at around 1500 degreesC and 1.33 x 10(4) Pa by employing SiH4 + C2H4 + H-2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm(2) (.) V-1 (.) s(-1) with a carrier concentration of similar to 10(16) cm(-3) and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 x 10(21) cm(-3) with a mobility of 0.75 cm(2) (.) V-1 (.) s(-1). SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Al-doped 4H-SiC substrates. The C - V characteristics of the diodes were linear in the 1/C-3 - V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 degreesC, which provides a potential for high-temperature applications.

Growth of ZnO single crystal by chemical vapor transport method

ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.

Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template

The surface morphology of GaN grown by MOCVD on GaN/Si template was studied. Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature. The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template. The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects. The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.

Growth and characterization of semi-insulating GaN films grown by MOCVD

High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.