Microstructure and mechanical properties of squeeze-cast copper

Demand for cost-effective manufacturing techniques led to the development of near-net-shape processes. Squeeze casting is one such established effort. This process enjoys the combined merits of casting and forging. Squeeze casting imparts soundness comparable to that of wrought products while maintaining isotropic nature. Aluminum alloys and zinc alloys have been successfully processed through squeeze casting, but copper and copper alloys do not seem to have been attempted. Considering the capability of squeeze casting process, it is reasonable to expect properties different from that of conventionally cast copper. This paper presents the details of a systematic investigation wherein optimum process parameters for the squeeze casting of pure copper were established. Microstructure of squeeze-cast copper has been found to be significantly different from that of conventionally cast copper, and the dendrite arm spacing is much smaller. In addition to the room temperature mechanical properties, elevated temperature properties of copper are also appreciably improved by squeeze casting.

Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol-gel method

ZnO:Al thin films were prepared on glass and silicon substrates by the sol-gel spin coating method. The x-ray diffraction (XRD) results showed that a polycrystalline phase with a hexagonal structure appeared after annealing at 400 degrees C for 1 h. The transmittance increased from 91 to about 93% from pure ZnO films to ZnO film doped with 1 wt% Al and then decreased for 2 wt% Al. The optical band gap energy increased as the doping concentration was increased from 0.5 wt% to 1 wt% Al. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased and the leakage current increased with an increase of annealing temperature. The dielectric constant was found to be 3.12 measured at 1 MHz. The dissipation value for the film annealed at 300 degrees C was found to be 3.1 at 5 V. (C) 2011 Elsevier Ltd. All rights reserved.

Composites of Graphene and Other Nanocarbons with Organogelators Assembled through Supramolecular Interactions

Carbon nanomaterials (CNMs), such as exfoliated graphene (EG), long-chain functionalized EG, single-walled carbon nanotubes (SWNTs), and fullerene (C-60), have been investigated for their interaction with two structurally different gelators based on all-trans tri-p-phenylenevinylene bis-aldoxime (1) and n-lauroyl-L-alanine (2) both in solution and in supramolecular organogels. Gelation occurs in toluene through hydrogen bonding and van der Waals interactions for 1 and 2 in addition to pp stacking specifically in the case of 1. These nanocomposites provide a thorough understanding in terms of molecular-level interactions of dimensionally different CNMs with structurally different gelators. The presence of densely wrapped CNMs encapsulated fibrous network in the resulting composites is evident from various spectroscopic and microscopic studies, indicating the presence of supramolecular interactions. Concentration- and temperature-dependent UV/Vis and fluorescence spectra show that CNMs promote aggregation of the gelator molecules, leading to hypochromism and quenching of the fluorescence intensity. Thermotropic mesophases of 1 are altered by the inclusion of a small amount of CNMs. The gelCNM composites show increased electrical conductivity compared with that of the native organogel. Rheological studies of the composites demonstrate the formation of rigid and viscoelastic solidlike assembly due to reinforced aggregation of the gelators on CNMs. Synergistic behavior is observed in case of the composite gel of 1, containing a mixture of EG and SWNT, when compared with other mixtures of CNMs in all combinations with EG. This affords new nanocomposites with interesting optical, thermal, electrical, and mechanical properties.

Bioactivity and mechanical properties of nickel-incorporated hydrogenated carbon nanocomposite thin films

In this paper, the influence of nickel incorporation on the mechanical properties and the in vitro bioactivity of hydrogenated carbon thin films were investigated in detail. Amorphous hydrogenated carbon (a-C : H) and nickel-incorporated hydrogenated carbon (Ni/a-C : H) thin films were deposited onto the Si substrates by using reactive biased target ion beam deposition technique. The films' chemical composition, surface roughness, microstructure and mechanical properties were investigated by using XPS, AFM, TEM, nanoindentation and nanoscratch test, respectively. XPS results have shown that the film surface is mainly composed of nickel, nickel oxide and nickel hydroxide, whereas at the core is nickel carbide (Ni3C) only. The presence of Ni3C has increased the sp(2) carbon content and as a result, the mechanical hardness of the film was decreased. However, Ni/a-C : H films shows very low friction coefficient with higher scratch-resistance behavior than that of pure a-C : H film. In addition, in vitro bioactivity study has confirmed that it is possible to grow dense bone-like apatite layer on Ni/a-C : H films. Thus, the results have indicated the suitability of the films for bone-related implant coating applications. Copyright (C) 2011 John Wiley & Sons, Ltd.

Influence of annealing on oxidation, microstructure and mechanical properties of Ni-49Ti films

Thin films of Ni-49 at.% Ti were deposited by DC magnetron sputtering on silicon substrates at 300 degrees C. The as-deposited amorphous films were annealed at a vacuum of 10(-6) mbar at various temperatures between 300 and 650 degrees C to study the effect of annealing on microstructure and mechanical properties. The as-deposited films showed partial crystallization on annealing at 500 degrees C. At 500 degrees C, a distinct oxidation layer, rich in titanium but depleted in Ni, was seen on the film surface. A gradual increase in thickness and number of layers of various oxide stoichiometries as well as growth of triangular shaped reaction zones were seen with increase in annealing temperature up to 650 degrees C. Nanoindentation studies showed that the film hardness values increase with increase in annealing temperature up to 600 degrees C and subsequently decrease at 650 degrees C. The results were explained on the basis of the change in microstructure as a result of oxidation on annealing.

Effect of Pt on interdiffusion and mechanical properties of the gamma and gamma ` phases in the Ni-Pt-Al system

The effect of Pt on the growth kinetics of the gamma'-Ni(Pt)](3)Al ordered intermetallic phase and the gamma- Ni(Pt, Al) solid solution diffusion rates of the species, hardness and elastic modulus was examined by employing the diffusion couple experimental technique. Experiments were conducted by using the beta-Ni(Pt)Al phase and Ni(Pt) alloy couples, each of which had a fixed amount of Pt (5, 10 and 15 at. %) in both the end members so that the Pt content is more or less constant throughout the interdiffusion zone. The results suggest that the growth kinetics of both phases and the average effective interdiffusion coefficients of Ni and Al increase with the increase in Pt content. Nanoindentation studies across the compositional gradients show that the mechanical properties of the intermetallic phase in the superalloy are relatively insensitive to the presence of Pt but are more sensitive to the Ni/Al ratio. In contrast, the marked variation in the hardness of the gamma phase were noted, increasing markedly with Al concentration in a given couple and also increasing with increasing Pt content. Possible causes for the observed variations are discussed.

Effect of Multiwall Carbon Nanotubes on Electrical and Structural Properties of Polyaniline

Polyaniline (PANI) and PANI/CNT (multiwall carbon nanotubes, CNT) composites were prepared using an oxidative chemical polymerization method with ammonium persulfate and dodecyl benzene sulfonic acid as the oxidizing agent and surfactant, respectively. Fourier-transform infrared spectroscopy spectra illustrate the presence of PANI in the composite and show that some interaction exists between PANI and CNT. Embedding of CNT in the PANI matrix is confirmed by scanning electron micrography. Conductivity of the PANI/CNT composites was higher than that of pure PANI, and the maximum conductivity obtained was 4.44 S/cm at 20 wt.% CNT.

Asymmetric and symmetric rolling of magnesium: Evolution of microstructure, texture and mechanical properties

In the present study, asymmetric rolling was carried out for incorporating a shear component during the rolling at different temperatures, and was compared with conventional (symmetric) rolling. The microstructures were investigated using electron back-scatter diffraction (EBSD). The strain incorporated was compared with the help of grain orientation spread (GOS). GOS was eventually used as a criterion to partition the microstructure for separating the deformed and the dynamically recrystallized (DRX) grains. The texture of the partitioned DRX grains was shifted by similar to 30 degrees along the c-axis from the deformed grains. The mechanism of dynamic recrystallization (DRX) has been identified as continuous dynamic recovery and recrystallization (CDRR). The partitioned deformed grains for the higher temperature rolled specimens exhibited a texture similar to the room temperature rolled specimen. The asymmetric rolling introduces a shear component which shifts the texture fibre by similar to 5-10 degrees from the conventional rolling texture. This led to an increase in ductility with little compromise on strength. (c) 2012 Elsevier B.V. All rights reserved.

Structure and mechanical properties of Ti-C films deposited using combination of pulsed DC and normal DC magnetron co-sputtering

Titanium-carbon (Ti-C) thin films of different compositions were prepared by a combination of pulsed DC (for Ti target) and normal DC (for graphite target) magnetron co-sputtering on oxidized silicon and fused quartz substrates. At 33.7 at.% of C content, pure hcp Ti transforms into fcc-TiC with a preferential orientation of (2 2 0) along with (1 1 1) and (2 0 0). A clear transformation in the preferential orientation from (2 2 0) to (1 1 1) has been observed when the C content was increased to 56 at.%. At 62.5 at.% of C, TiC precipitates in an amorphous carbon matrix whereas further increase in C leads to X-ray amorphous films. The cross-sectional scanning electron microscope images reveal that the films with low carbon content consists of columnar grains, whereas, randomly oriented grains are in an amorphous carbon matrix at higher carbon content. A dramatic variation was observed in the mechanical properties such as hardness, H, from 30 to 1 GPa and in modulus, E, from 255 to 25 GPa with varying carbon content in the films. Resistance to plastic deformation parameter was observed as 0.417 for films containing 62.5 at.% of C. Nanoscratch test reveals that the films are highly scratch resistant with a coefficient of friction ranging from 0.15 to 0.04. (C) 2012 Elsevier B.V. All rights reserved.

Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

We present an extensive study on the structural, electrical and optical properties of InN thin films grown on c-Al2O3, GaN(130 nm)/Al2O3, GaN(200 nm)/Al2O3 and GaN(4 mu m)/Al2O3 by using plasma-assisted molecular beam epitaxy. The high resolution X-ray diffraction study reveals better crystalline quality for the film grown on GaN(4 mu m)/Al2O3 as compared to others. The electronic and optical properties seem to be greatly influenced by the structural quality of the films, as can be evidenced from Hall measurement and optical absorption spectroscopy. Kane's k.p model was used to describe the dependence of optical absorption edge of InN films on carrier concentration by considering the non-parabolic dispersion relation for carrier in the conduction band. Room temperature Raman spectra for the InN films grown on GaN show the signature of residual tensile stress in contrast to the compressive stress observed for the films grown directly on c-Al2O3. (C) 2012 Elsevier B.V. All rights reserved.

Microstructure and mechanical properties of oxidation resistant suction cast Nb-Si-Al alloy

In this paper, we report a significant improvement in mechanical and oxidation properties of near eutectic Nb-Si alloys by the addition of aluminum (Al) and control of microstructural length scale. A comparative study of two alloys Nb-18.79at%Si and Nb-12.3at%Si-9at%Al were carried out. The processing for microstructure refinements were carried out by vacuum suction casting in water cooled thick copper mould. It is shown that addition of Al suppresses Nb3Si phase and promotes beta Nb5Si3 phase under nonequilibrium solidification condition. The microstructural length scale and in particular eutectic spacing reduces significantly to 50-100 nm in suction cast ternary alloy. A detailed TEM study shows the presence of delta-Nb11Si4 phase in Nb matrix. The hardness of Nb solid solution can be increased as a consequence to a level observed in Nb3Si intermetallic due to the well oriented precipitates. Compression test yields the ultimate strength of 1.8 +/- 0.1 GPa and engineering strain of 2.3 +/- 0.03%. In comparison, the binary Nb-18.79 at% Si alloy possesses an ultimate strength of 1.35 +/- 0.1 GPa and strain of 0.2 +/- 0.01% when processed under identical conditions. The latter exhibits coarser microstructural length scale (300-400 nm) and a brittle behavior. The indentation fracture toughness of Al containing suction cast alloy shows a value of 20.2 +/- 0.5 MPa root m which represents a major improvement over bulk Nb-Si eutectic alloy. The detailed thermal studies confirm a multifold improvement in oxidation resistance up to 1000 degrees C. (C) 2012 Elsevier B.V. All rights reserved.

Structural and mechanical properties of room temperature sputter deposited CrN coatings

Chromium nitride (CrN) thin films were deposited at room temperature on silicon and glass substrates using DC reactive magnetron sputtering in Ar + N-2 plasma. Structure and mechanical properties of these films were examined by using XRD, FESEM and nanoindentation techniques. XRD studies revealed that films are of mixed phase at lower nitrogen partial pressure (P-N2) and single phase at higher (P-N2). Microscopy results show that the films were composed of non-equiaxed columns with nanocrystallite morphology. The hardness and elastic modulus of the films increase with increasing nitrogen partial pressure (P-N2). A maximum hardness of similar to 29 GPa and elastic modulus of 341 GPa were obtained, which make these films useful for several potential applications. (C) 2012 Elsevier Ltd. All rights reserved.

The effect of minor addition of Ni on the microstructural evolution and mechanical properties of suction cast Al-0.14 at. pct Sc binary alloy

Aluminum scandium binary alloys represent a promising precipitation-hardening alloy system. However, the hardness of the binary alloys decreases with the rapid coarsening of Al3Sc precipitate during high-temperature aging. In the current study, we report a new approach to compensate for the loss of mechanical properties by combining rapid solidification with very small ternary addition of transition metal Ni. This addition yields dispersion, and at a critical concentration improves the mechanical properties. We explore additions of a maximum of 0.06 at. pct of Nickel to a binary Al-0.14 at. pct Sc alloy, which yield nickel-rich dispersions. We report two kinds of biphasic dispersions containing AlNi2Sc/Al9Ni2 and alpha-Al/Al9Ni2 phase combinations. The maximum improvement in mechanical properties occurs with the addition of 0.045 at. pct Ni with a yield strength of 239 +/- A 7 MPa for an aging treatment at 583 K (310 A degrees C) for 15 hours. DOI: 10.1007/s11661-013-1624-z (C) The Minerals, Metals & Materials Society and ASM International 2013

Structural, electrical and dielectric properties of sputtered TiO2 films for Al/TiO2/Si capacitors

Metal-oxide semiconductor capacitors based on titanium dioxide (TiO2) gate dielectrics were prepared by RF magnetron sputtering technique. The deposited films were post-annealed at temperatures in the range 773-1173 K in air for 1 hour. The effect of annealing temperature on the structural properties of TiO2 films was investigated by X-ray diffraction and Raman spectroscopy, the surface morphology was studied by atomic force microscopy (AFM) and the electrical properties of Al/TiO2/p-Si structure were measured recording capacitance-voltage and current-voltage characteristics. The as-deposited films and the films annealed at temperatures lower than 773 K formed in the anatase phase, while those annealed at temperatures higher than 973 K were made of mixtures of the rutile and anatase phases. FTIR analysis revealed that, in the case of films annealed at 1173 K, an interfacial layer had formed, thereby reducing the dielectric constant. The dielectric constant of the as-deposited films was 14 and increased from 25 to 50 with increases in the annealing temperature from 773 to 973 K. The leakage current density of as-deposited films was 1.7 x 10(-5) and decreased from 4.7 X 10(-6) to 3.5 x 10(-9) A/cm(2) with increases in the annealing temperature from 773 to 1173 K. The electrical conduction in the Al/TiO2/p-Si structures was studied on the basis of the plots of Schottky emission, Poole-Frenkel emission and Fowler-Nordheim tunnelling. The effect of structural changes on the current-voltage and capacitance-voltage characteristics of Al/TiO2/p-Si capacitors was also discussed.

Effect of TiO2 on electrical and magnetic properties of Ni0.35Cu0.12Zn0.35Fe2O4 synthesized by the microwave-hydrothermal method

The nanocomposites of xTiO(2)+(1-x)Ni0.53Cu0.12Zn0.35Fe2O4 (where 0 <= x >= 1) were prepared using microwave hydrothermal (M H) method at 165 degrees C/45 min. The as-synthesized powders were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FTIR). The particle size of the powder varies from 18 to 35 nm. The as prepared powders were densified at 500 degrees C/30 min using microwave sintering method. The sintered composites were characterized by XRD and scanning electron microscopy (SEM). The bulk densities of the present composites were increasing with the addition of TiO2. The grain sizes of all the composite vary between 65 nm and 90 nm. The addition of TiO2 to ferrite increased the dielectric properties (epsilon' and epsilon `') also the resonant frequency of all the composites was found to be greater than 1 GHz. The imaginary part of permeability mu `' was found to increase with an increase of TiO2.