Optical properties of zirconia-titania-ORMOSIL films for temperature tuning distributed feedback waveguide lasers

The zirconia-titania-ORMOSIL waveguide thin films with considerable optical quality were prepared by the sol-gel process. The refractive index (n) and the extinction coefficient (k) were determined by a scanning ellipsometer. Wavelength tunable output of distributed feedback waveguide lasing was demonstrated in Rhodamine 6G doped ZrO2 TiO2-ORMOSIL thin films by varying the temperature, and about 5.5 nm wavelength tuning range was achieved around the emission wavelength of 599 nm. The thermal-optic coefficient (dn/dT) of the active ZrO2-TiO2-ORMOSIL films was deduced. (c) 2005 Elsevier B.V. All rights reserved.

Ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass produced by He+ ion implantation combined with Ar+ ion beam etching

This paper reports on the fabrication and characterization of a ridge optical waveguide in an Er3+/Yb3+ co-doped phosphate glass. The He+ ion implantation (at energy of 2.8 MeV) is first applied onto the sample to produce a planar waveguide substrate, and then Ar+ ion beam etching (at energy of 500 eV) is carried out to construct rib stripes on the sample surface that has been deposited by a specially designed photoresist mask. According to a reconstructed refractive index profile of the waveguide cross section, the modal distribution of the waveguide is simulated by applying a computer code based on the beam propagation method, which shows reasonable agreement with the experimentally observed waveguide mode by using the end-face coupling method. Simulation of the incident He ions at 2.8 MeV penetrating into the Er3+/Yb3+ co-doped phosphate glass substrate is also performed to provide helpful information on waveguide formation.

Low loss waveguide in Nd3+-doped silicate glass fabricated by carbon ion implantation

Low loss index enhanced planar waveguides in Nd3+-doped silicate glass were fabricated by 3.0 MeV C+ ion implantation. The enhancement of the refractive index confined the light propagating in the waveguide. The prism-coupling method was used to measure dark modes in the waveguide. The effective refractive indices of the waveguide were obtained based on the dark modes. The moving fiber method was applied to measure the waveguide propagation loss. Loss measured in non-annealed samples is about 0.6 dB/cm. And the waveguide mode optical near-field output at 633 nm was presented. (c) 2005 Elsevier B.V. All rights reserved.

Characterization of Er3+-doped Na2O-WO3-TeO2 glass for ion-exchanged waveguide amplifiers and lasers

Er^(3+)-doped Na2O-WO3-TeO2 glass consistent with standard ion-exchange technology has been fabricated and characterized. The measured absorption and emission spectra of the glass were analyzed by the Judd-Ofelt and McCumber theories. The intensity parameters are Ω2 = 7.01

Gain and noise figure of a double-pass waveguide amplifier based on Er/Yb-doped phosphate glass

A waveguide amplifier is fabricated by Ag+-Na+ two-step ion exchange on Er/Yb-doped phosphate glass. The spectroscopic performance of glass and the properties of channel waveguide are characterized. A double-pass configuration is adopted to measure the gain and noise figure (NF) of the waveguide amplifier, and the comparison of gain and NF for the single and double-pass configuration of the waveguide amplifier is presented. The results show that the double-pass configuration can make the gain increase from 8.8dB (net gain 2.2dB/cm) of the single-pass one to 14.6 dB (net gain 3.65 dB/cm) for small input power at 1534 nm, and the NF are all lower than 5.5dB for both the configurations.

Waveguide lasers in Er:Yb-doped phosphate glass fabricated by femtosecond laser writing

Advanced waveguide lasers, operating both in continuous wave and pulsed regimes, have been realized in an active phosphate glass by direct writing with femtosecond laser pulses. Stable single mode operation was obtained; the laser provided more than 50 m W in single longitudinal and transverse mode operation with 21% slope efficiency. Furthermore, by combining a high gain waveguide and an innovated fiber-pigtailed saturable absorber based on carbon nanotubes, a mode-locked ring laser providing transform limited 1.6 ps pulses was demonstrated. © 2007 IEEE.

Mode-locked and single-longitudinal-mode waveguide lasers fabricated by femtosecond laser pulses in Er:Yb-doped phosphate glass

Mode-locked and single-longitudinal-mode waveguide lasers, manufactured by femtosecond laser writing in Er-Yb-doped phosphate glasses, are presented. Transform-limited 1.6-ps pulses and a cw output power exceeding 50 mW have been obtained in the two regimes. © 2007 Optical Society of America.

Q-switched modelocking using carbon nanotubes in an ultrafast laser inscribed ytterbium doped bismuthate glass waveguide laser

Passive modelocking using carbon nanotubes is achieved in a linear cavity waveguide laser realized by ultrafast laser inscription in ytterbium doped bismuthate glass. The pulses observed under a Q-switched envelope have a repetition rate of 1.5 GHz. © 2012 OSA.

Mode-locked and single-longitudinal-mode waveguide lasers fabricated by femtosecond laser pulses in Er: Yb-doped phosphate glass

Mode-locked and single-longitudinal-mode waveguide lasers, manufactured by femtosecond laser writing in Er-Yb-doped phosphate glasses, are presented. Transform-limited 1.6-ps pulses and a cw output power exceeding 50 mW have been obtained in the two regimes. © 2007 Optical Society of America.

SiO2 nanoparticles as scatterers for random organic laser action in red fluorescent dye 4-(dicyanomethylene)-2-tert-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran doped polystyrene films

Random multimode lasers are achieved in 4-(dicyanomethylene)-2-tert-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polystyrene thin films by introducing silicon dioxide (SiO2) nanoparticles as scatterers. The devices emit a resonance multimode peak at a center wavelength of 640 nm with a mode linewidth less than 0.87 nm. The threshold excitation intensity is as low as 0.25 mJ pulse(-1) cm(-2). It can be seen that the microscopic random resonance cavities can be formed by multiple scattering of SiO2 nanoparticles.

Effect of doped dye on the charge-carrier transport and electroluminescent performance in molecularly doped polymer light-emitting diodes

The effects of the concentration of 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-(1)-benzopyropyrano(6, 78-i,j)quinolizin-11-one (C545T) as dopant in polyfluorene (PFO) on the charge-carrier transport and electroluminescence (EL) performance were investigated by steady-state and transient EL measurements. A fully green emission from C545T was observed and the EL performance depends strongly on the C545T concentration. The mobility in the C545T-doped PFO film was determined by transient EL. The dopant concentration dependence of the current-voltage relationship indicated clearly the carrier trapping by the C545T molecules. The mobility in C545T:PFO changed significantly with the C545T concentration, and showed a nontrivial dependence on the doping level. The behavior may be understood in terms of the formation of an additional energy disorder due to potential fluctuation caused by the Coulomb interaction of the randomly distributed doping molecules.

Effects of doped dye on the charge carrier injection, transport, and electroluminescent performance in polymeric light-emitting diodes

The effects of doped fluorescent dye 4-(dicyanomethylene)-2-i-propyl-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTI) on the charge carrier injection, transport and electroluminescence (EL) performance in polyfluorene (PFO)-based polymer light-emitting diodes (PLEDs) were investigated by steady-state current-voltage (I-V) characteristics and transient EL measurements. A red EL from DCJTI was observed and the EL performance depended strongly on the DCJTI concentration. The analysis of the steady-state I-V characteristics at different DCJTI concentrations found that three regions was shown in the I-V characteristics, and each region was controlled by different processes depending on the applied electric field. The effect of the dopant concentration on the potential-barrier height of the interface is estimated using the Fowler-Nordheim model. The dopant concentration dependence of the current-voltage relationship indicated clearly the carrier trapping by the DCJTI molecules. The mobility in DCJTI: PFO changed significantly with the DCJTI concentration, and showed a nontrivial dependence on the doping level. The behavior may be understood in terms of the formation of an additional energy disorder due to potential fluctuation caused by the Coulomb interaction of the randomly distributed doping molecules.

Effect of dye concentration on the charge carrier transport in molecularly doped organic light-emitting diodes

The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant in tris(8-quinolinolato) aluminum (Alq(3)) on the charge carrier transport in Alq(3):DCJTB was investigated by measuring the steady current-voltage characteristics and the transient electroluminescence. The dopant concentration dependence of the current-voltage relationship clearly indicates the carrier trapping by the DCJTB molecule. The DCJTB concentration significantly affects the electron mobility in Alq(3):DCJTB. The mobility has a nontrivial dependence on the doping level. For relatively low doping levels, less than 1%, the electron mobility of Alq(3):DCJTB decreases with the doping level. An increasing mobility is then observed if the dopant concentration is further increased, followed by a decrease for doping levels larger than similar to2%. The change of the electron mobility with the DCJTB concentration in Alq(3) is attributed to the additional energetic disorder due to potential fluctuations caused by the dipole-dipole interaction of random distribution dopant at the relatively low doping concentration, and to the phase separation at the high doping concentration.

Bright blue electroluminescent devices utilizing poly (N-vinylcarbazole) doped with fluorescent dye

Bright blue electroluminescent devices have been fabricated using poly (N-vinylcarbazole) (PVK) doped with perylene as the emissive layer, poly(p-phenylenevinylene) (PPV) as the hole-transporting layer, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), tris(8-hydroxyquinoline)aluminum (Alq(3)) as the electron-transporting layer, and Al as the cathode. A luminance of 700 cd/m(2) and a luminescent efficiency of 0.8% are achieved at a drive voltage of 36 V. In the experiment, it is found that the introduction of electron-transporting layer PBD has a great effect on the emissive color of the electroluminescent devices prepared by PVK doped with perylene. Yellow-green emission is observed from the device structure of glass substrate/indium-tin-oxide/PVK:perylene/Al. The possible emissive mechanisms are given. The effect of the transporting layer on the electroluminescence is also discussed. (C) 1997 Elsevier Science S.A.