Reactivity of sub 1 nm supported clusters: (TiO2)(n) clusters supported on rutile TiO2 (110)

Metal oxide clusters of sub-nm dimensions dispersed on a metal oxide support are an important class of catalytic materials for a number of key chemical reactions, showing enhanced reactivity over the corresponding bulk oxide. In this paper we present the results of a density functional theory study of small sub-nm TiO2 clusters, Ti2O4, Ti3O6 and Ti4O8 supported on the rutile (110) surface. We find that all three clusters adsorb strongly with adsorption energies ranging from -3 eV to -4.5 eV. The more stable adsorption structures show a larger number of new Ti-O bonds formed between the cluster and the surface. These new bonds increase the coordination of cluster Ti and O as well as surface oxygen, so that each has more neighbours. The electronic structure shows that the top of the valence band is made up of cluster derived states, while the conduction band is made up of Ti 3d states from the surface, resulting in a reduction of the effective band gap and spatial separation of electrons and holes after photon absorption, which shows their potential utility in photocatalysis. To examine reactivity, we study the formation of oxygen vacancies in the cluster-support system. The most stable oxygen vacancy sites on the cluster show formation energies that are significantly lower than in bulk TiO2, demonstrating the usefulness of this composite system for redox catalysis.

Decay of Cystalline Order and Equilibration during the Solid-to-Plasma Transition Induced by 20-fs Microfocused 92-eV Free-Electron-Laser Pulses

We have studied a solid-to-plasma transition by irradiating Al foils with the FLASH free electron laser at intensities up to 10(16) W/cm(2). Intense XUV self-emission shows spectral features that are consistent with emission from regions of high density, which go beyond single inner-shell photoionization of solids. Characteristic features of intrashell transitions allowed us to identify Auger heating of the electrons in the conduction band occurring immediately after the absorption of the XUV laser energy as the dominant mechanism. A simple model of a multicharge state inverse Auger effect is proposed to explain the target emission when the conduction band at solid density becomes more atomiclike as energy is transferred from the electrons to the ions. This allows one to determine, independent of plasma simulations, the electron temperature and density just after the decay of crystalline order and to characterize the early time evolution.

Electronic structure of a neutral oxygen vacancy in SrTiO3

The electronic structure of an isolated oxygen vacancy in SrTiO3 has been investigated with a variety of ab initio quantum mechanical approaches. In particular we compared pure density functional theory (DFT) approaches with the Hartree-Fock method, and with hybrid methods where the exchange term is treated in a mixed way. Both local cluster models and periodic calculations with large supercells containing up to 80 atoms have been performed. Both diamagnetic (singlet state) and paramagnetic (triplet state) solutions have been considered. We found that the formation of an O vacancy is accompanied by the transfer of two electrons to the 3d(z2) orbitals of the two Ti atoms along the Ti-Vac-Ti axis. The two electrons are spin coupled and the ground state is diamagnetic. New states associated with the defect center appear in the gap just below the conduction band edge. The formation energy computed with respect to an isolated oxygen atom in the triplet state is 9.4 eV.

Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation

Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C2xB1−xN1−x alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate substitution of C (x < 0.25); and (b) the electronic structure of C2xB1−xN1−x can be further tuned not only with composition x, but also with the configuration adopted by C substituents in the BN matrix. Our analysis, based on accurate screened hybrid functional calculations, provides a clear understanding of the correlation found between the bandgap and the level of aggregation of C atoms: the bandgap decreases most when the C atoms are maximally isolated, and increases with aggregation of C atoms due to the formation of bonding and anti-bonding bands associated with hybridization of occupied and empty defect states. We determine the location of valence and conduction band edges relative to vacuum and discuss the implications on the potential use of 2D C2xB1−xN1−x alloys in photocatalytic applications. Finally, we assess the thermodynamic limitations on the formation of these alloys using a cluster expansion model derived from first-principles.

Interfacial Electron Transfer Dynamics Following Laser Flash Photolysis of [Ru(bpy)(2)((4,4 `-PO(3)H(2))(2)bpy)](2+) in TiO(2) Nanoparticle Films in Aqueous Environments

Nanosecond laser flash photolysis has been used to investigate injection and back electron transfer from the complex [(Ru-(bpy)(2)(4,4`-(PO(3)H(2))(2)bpy)](2+) surface-bound to TiO(2) (TiO(2)-Ru(II)). The measurements were conducted under conditions appropriate for water oxidation catalysis by known single-site water oxidation catalysts. Systematic variations in average lifetimes for back electron transfer, - were observed with changes in pH, surface coverage, incident excitation intensity, and applied bias. The results were qualitatively consistent with a model involving rate-limiting thermal activation of injected electrons from trap sites to the conduction band or shallow trap sites followed by site-to-site hopping and interfacial electron transfer, TiO(2)(e(-))-Ru(3+) -> TiO(2)-Ru(2+). The appearance of pH-dependent decreases in the efficiency of formation of TiO(2)-Ru(3+) and in incident-photon-to-current efficiencies with the added reductive scavenger hydroquinone point to pH-dependent back electron transfer processes on both the sub-nanosecond and millisecond-microsecond time scales, which could be significant in limiting long-term storage of multiple redox equivalents.

Strain- and electric field-induced band gap modulation in nitride nanomembranes

The hexagonal nanomembranes of the group III-nitrides are a subject of interest due to their novel technological applications. In this paper, we investigate the strain- and electric field-induced modulation of their band gaps in the framework of density functional theory. For AlN, the field-dependent modulation of the bandgap is found to be significant whereas the strain-induced semiconductor-metal transition is predicted for GaN. A relatively flat conduction band in AlN and GaN nanomembranes leads to an enhancement of their electronic mobility compared to that of their bulk counterparts. © 2013 IOP Publishing Ltd.

Synthesis and characterization of nanostructured TiO2-SnO2 composite

Nanostructured composites based on titanium dioxide have been studied in order to improve optical and photo-catalytic properties, as well as their performance in gas sensors. In this work, titanium and tin dioxides were simultaneously synthesized by the polyol method resulting in TiO2 platelet coated with SnO2 nanoparticles as was observed by scanning electron microscopy. The thermal analysis showed that the combined synthesis promotes more easily the crystallization of the TiO2 rutile phase. The composite obtained after heat treatment at 500 degrees C showed to be formed of almost only rutile phases of both oxides. The optical properties analyzed by UV-Vis spectroscopy showed that the combined oxides have higher absorbance, which reinforces a model found in the literature based on the flow of photo-generated electrons to the conduction band of SnO2 delaying the recombination of charges.

Synthesis and characterization of nanostructured TiO2-SnO2 composite

Nanostructured composites based on titanium dioxide have been studied in order to improve optical and photo-catalytic properties, as well as their performance in gas sensors. In this work, titanium and tin dioxides were simultaneously synthesized by the polyol method resulting in TiO2 platelet coated with SnO2 nanoparticles as was observed by scanning electron microscopy. The thermal analysis showed that the combined synthesis promotes more easily the crystallization of the TiO2 rutile phase. The composite obtained after heat treatment at 500 °C showed to be formed of almost only rutile phases of both oxides. The optical properties analyzed by UV-Vis spectroscopy showed that the combined oxides have higher absorbance, which reinforces a model found in the literature based on the flow of photo-generated electrons to the conduction band of SnO2 delaying the recombination of charges.

DFT and synchrotron radiation study of Eu2+ doped BaAl2O4

The structural distortions resulting from the size mismatch between the Eu2+ luminescent centre and the host Ba2+ cation as well as the electronic structure of BaAl2O4:Eu2+(,Dy3+) were studied using density functional theory (DFT) calculations and synchrotron radiation (SR) luminescence spectroscopy. The modified interionic distances as well as differences in the total energies indicate that Eu2+ prefers the smaller of the two possible Ba sites in the BaAl2O4 host. The calculated Eu2+ 4f(7) and 4f(6)5d(1) ground level energies confirm that the excited electrons can reach easily the conduction band for subsequent trapping. In addition to the green luminescence, a weak blue emission band was observed in BaAl2O4:Eu2+,Dy3+ probably due to the creation of a new Ba2+ site due to the effect of water exposure on the host. (C) 2012 Optical Society of America

Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

Einzelmolekülspektroskopische Studien an Farbstoff-markierten Chlorophyll-a/b-Lichtsammlerkomplexen und Untersuchungen zur Integration der Komplexe in elektrochemische Solarzellen

Die zentrale Funktion des Hauptlichtsammlerkomplexes des Photosystems II, LHCII, besteht in der Absorption von Sonnenlicht und der Bereitstellung von Energie für die photosynthetische Ladungstrennung im Reaktionszentrum des Photosystems. Auch in der Regulation der Photosynthese spielt der LHCII eine wichtige Rolle, da die Energieverteilung zwischen Photosystem I und Photosystem II im Rahmen des sog. „State Transition“-Prozesses über die Verteilung der Lichtsammlerkomplexe zwischen den beiden Photosystemen gesteuert wird. Im Blickfeld des ersten Teils dieser Arbeit stand die konformative Dynamik der N-terminalen Domäne des LHCII, die wahrscheinlich in die Regulation der Lichtsammlung involviert ist. Gemeinsam mit Mitarbeitern des 3. Physikalischen Instituts der Universität Stuttgart wurde an der Etablierung einer Methode zur einzelmolekülspektroskopischen Untersuchung der Dynamik des N-Terminus gearbeitet. Als Messgröße diente der Energietransfer zwischen einem Fluoreszenzfarbstoff, der an die N-terminale Domäne gekoppelt war, und den Chlorophyllen des Komplexes. Die Funktion des LHCII als effiziente Lichtantenne bildete die Grundlage für den zweiten Teil dieser Arbeit. Hier wurde untersucht, in wie weit LHCII als Lichtsammler in eine elektrochemische Solarzelle integriert werden kann. In der potentiellen Solarzelle sollte die Anregungsenergie des LHCII auf Akzeptorfarbstoffe übertragen werden, die in der Folge Elektronen in das Leitungsband einer aus Titandioxid oder Zinndioxid bestehenden porösen Halbleiterelektrode injizierten, auf der Komplexe und Farbstoffe immobilisiert waren.

Surface-functionalized latex particles as additives in the mineralization of zinc oxide

Polystyrene latex particles modified at the surface with different hydrophilic functional groups were prepared by miniemulsion polymerization and applied to control the crystallization of zinc oxide in aqueous medium. The effects of both latex structure and concentration on the crystal growth, morphology, crystalline structure, and properties of the resulting zinc oxide were analyzed. Depending on the latex additive used, micro- and submicrosized crystals with a broad variety of morphologies were obtained. Among the studied latexes, the carboxyl-derived particles were shown to be a convenient system for further quantitative investigations. In this case, as the additive concentration increases, the aspect ratio of the crystals decreases systematically. Latex particles are assumed to adsorb preferentially onto the fast growing {001} faces of ZnO, interacting with the growth centers and reducing the growth rate in [001]. When zinc oxide is precipitated in the presence of latex, the polymer particles become incorporated into the growing crystals and polymer–inorganic hybrid materials are obtained. These materials are composed of an inorganic and largely undisturbed crystalline matrix in which organic latex particles are embedded. Increasing amounts of latex become incorporated into the growing crystals at increasing overall concentration in the crystallizing system. Photoluminescence (PL) spectra were measured to obtain information on defect centers. Emission spectra of all samples showed a narrow UV peak and a broad band in the green-yellow spectral region. The former emission is attributed to exciton recombination, whereas the latter seems to be related with deep-level donors. Latex appears to be a quencher of the visible emission of zinc oxide. Thus, compared to pure zincite, ZnO–latex hybrid materials show a significantly lower PL intensity in the visible range of the spectrum. Under continuous photoexcitation, a noticeable dynamic behavior of the PL is observed, which can be related to a photodesorption of adsorbed oxygen. These surface-adsorbed oxygen species seem to play a crucial role for the optical properties of the materials and may mediate the tunneling of electrons from the conduction band to preexisting deep-level traps, probably related to intrinsic defects (oxygen vacancies or interstitial zinc). The polymer particles can block the sites where oxygen adsorbs, and the disappearance of the “electron-shuttle” species leads to the observed quenching of the visible emission. Electron paramagnetic resonance (EPR) provided additional information about crystal defects with unpaired electrons. Spectra of all samples exhibit a single signal at g ≈ 1.96, typical for shallow donors. Contrary to the results of other authors, no correlation was possible between the EPR signal and the visible range of PL spectra, which suggests that centers responsible for the visible emission and the EPR signal are different.

Ab-initio determination of x-ray absorption near edge structure (xanes) spectra in an ultrasoft and norm conserving pseudopotentials scheme

X-ray absorption spectroscopy (XAS) is a powerful means of investigation of structural and electronic properties in condensed -matter physics. Analysis of the near edge part of the XAS spectrum, the so – called X-ray Absorption Near Edge Structure (XANES), can typically provide the following information on the photoexcited atom: - Oxidation state and coordination environment. - Speciation of transition metal compounds. - Conduction band DOS projected on the excited atomic species (PDOS). Analysis of XANES spectra is greatly aided by simulations; in the most common scheme the multiple scattering framework is used with the muffin tin approximation for the scattering potential and the spectral simulation is based on a hypothetical, reference structure. This approach has the advantage of requiring relatively little computing power but in many cases the assumed structure is quite different from the actual system measured and the muffin tin approximation is not adequate for low symmetry structures or highly directional bonds. It is therefore very interesting and justified to develop alternative methods. In one approach, the spectral simulation is based on atomic coordinates obtained from a DFT (Density Functional Theory) optimized structure. In another approach, which is the object of this thesis, the XANES spectrum is calculated directly based on an ab – initio DFT calculation of the atomic and electronic structure. This method takes full advantage of the real many-electron final wavefunction that can be computed with DFT algorithms that include a core-hole in the absorbing atom to compute the final cross section. To calculate the many-electron final wavefunction the Projector Augmented Wave method (PAW) is used. In this scheme, the absorption cross section is written in function of several contributions as the many-electrons function of the finale state; it is calculated starting from pseudo-wavefunction and performing a reconstruction of the real-wavefunction by using a transform operator which contains some parameters, called partial waves and projector waves. The aim of my thesis is to apply and test the PAW methodology to the calculation of the XANES cross section. I have focused on iron and silicon structures and on some biological molecules target (myoglobin and cytochrome c). Finally other inorganic and biological systems could be taken into account for future applications of this methodology, which could become an important improvement with respect to the multiscattering approach.

Photokathoden mit internem DBR-Reflektor als Quellen hochintensiver spinpolarisierter Elektronenstrahlen

Die Erzeugung von Elektronenstrahlen hoher Intensität (I$geq$2,mA) und hoher Spinpolarisation (P$geq$85%) ist für die Experimente an den geplanten glqq Linac Ringgrqq Electron--Ion--Collidern (z.B. eRHIC am Brookhaven National Laboratory) unabdingbar, stellt aber zugleich eine enorme Herausforderung dar. Die Photoemission aus ce{GaAs}--basierten Halbleitern wie z.B. den in dieser Arbeit untersuchten GaAlAs/InGaAlAs Quanten--Übergittern zeichnet sich zwar durch eine hohe Brillanz aus, die geringe Quantenausbeute von nur ca. 1% im Bereich maximaler Polarisation erfordert jedoch hohe Laserintensitäten von mehreren Watt pro $text{cm}^{2}$, was erhebliche thermische Probleme verursacht. rnrnIn dieser Arbeit konnte zunächst gezeigt werden, dass die Lebensdauer einer Photokathode mit steigender Laserleistung bzw. Temperatur exponentiell abnimmt. Durch Einbringen eines DBR--Spiegels zwischen die aktive Zone der Photokathode und ihr Substrat wird ein Großteil des ungenutzten Laserlichts wieder aus dem Kristall herausreflektiert und trägt somit nicht zur Erwärmung bei. Gleichzeitig bildet der Spiegel zusammen mit der Grenzfläche zum Vakuum eine Resonator--Struktur aus, die die aktive Zone umschließt. Dadurch kommt es für bestimmte Wellenlängen zu konstruktiver Interferenz und die Absorption in der aktiven Zone erhöht sich. Beide Effekte konnten durch vergleichenden Messungen an Kathoden mit und ohne DBR--Spiegel nachgewiesen werden. Dabei ergibt sich eine gute Übereinstimmung mit der Vorhersage eines Modells, das auf der dielektrischen Funktion der einzelnen Halbleiterstrukturen beruht. Von besonderer praktischer Bedeutung ist, dass die DBR--Kathode für einen gegebenen Photoemissions-strom eine um einen Faktor $geq$,3{,}5 kleinere Erwärmung aufweist. Dies gilt über den gesamten Wellenlängenbereich in dem die Kathode eine hohe Strahlpolarisation (P$>$80%) produzieren kann, auch im Bereich der Resonanz.rnAus zeitaufgelösten Messungen der Ladungsverteilung und Polarisation lassen sich sowohl Rückschlüsse über die Transportmechanismen im Inneren einer Kathode als auch über die Beschaffenheit ihrer Oberfläche ziehen. Im Rahmen dieser Dissertation konnte die Messgeschwindigkeit der verwendeten Apparatur durch den Einbau eines schnelleren Detektors und durch eine Automatisierung der Messprozedur entscheidend vergrößert und die resultierende Zeitauflösung mit jetzt 1{,}2 Pikosekunden annähernd verdoppelt werden.rnrnDie mit diesen Verbesserungen erhaltenen Ergebnisse zeigen, dass sich der Transport der Elektronen in Superlattice--Strukturen stark vom Transport in den bisher untersuchten Bulk--Kristallen unterscheidet. Der Charakter der Bewegung folgt nicht dem Diffusionsmodell, sondern gibt Hinweise auf lokalisierte Zustände, die nahe der Leitungsbandunterkante liegen und Elektronen für kurze Zeit einfangen können. Dadurch hat die Impulsantwort einer Kathode neben einem schnellen Abfall des Signals auch eine größere Zeitkonstante, die selbst nach 30,ps noch ein Signal in der Größenordnung von ca. 5textperthousand der Maximalintensität erzeugt.

Electronic band dispersion of graphene nanoribbons via Fourier-transformed scanning tunneling spectroscopy

The electronic structure of atomically precise armchair graphene nanoribbons of width N=7 (7-AGNRs) are investigated by scanning tunneling spectroscopy (STS) on Au(111). We record the standing waves in the local density of states of finite ribbons as a function of sample bias and extract the dispersion relation of frontier electronic states by Fourier transformation. The wave-vector-dependent contributions from these states agree with density functional theory calculations, thus enabling the unambiguous assignment of the states to the valence band, the conduction band, and the next empty band with effective masses of 0.41±0.08me,0.40±0.18me, and 0.20±0.03me, respectively. By comparing the extracted dispersion relation for the conduction band to corresponding height-dependent tunneling spectra, we find that the conduction band edge can be resolved only at small tip-sample separations and has not been observed before. As a result, we report a band gap of 2.37±0.06 eV for 7-AGNRs adsorbed on Au(111).