Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.

Titanium oxide adhesion layer for high temperature annealed Si/Si3N4/TiOx/Pt/LiCoO2 battery structures

This work describes the influence of a high annealing temperature of about 700C on the Si(substrate)/Si3N4/TiOx/Pt/LiCoO2 multilayer system for the fabrication of all-solid-state lithium ion thin film microbatteries. Such microbatteries typically utilize lithium cobalt oxide (LiCoO2) as cathode material with a platinum (Pt) current collector. Silicon nitride (Si3N4) is used to act as a barrier against Li diffusion into the substrate. For a good adherence between Si3N4 and Pt, commonly titanium (Ti) is used as intermediate layer. However, to achieve crystalline LiCoO2 the multilayer system has to be annealed at high temperature. This post-treatment initiates Ti diffusion into the Pt-collector and an oxidation to TiOx, leading to volume expansion and adhesion failures. To solve this adhesion problem, we introduce titanium oxide (TiOx) as an adhesion layer, avoiding the diffusion during the annealing process. LiCoO2, Pt and Si3N4 layers were deposited by magnetron sputtering and the TiOx layer by thermal oxidation of Ti layers deposited by e-beam technique. Asdeposited and annealed multilayer systems using various TiOx layer thicknesses were studied by scanning electron microscopy (SEM) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) and x-ray photoelectron spectroscopy (XPS). The results revealed that an annealing process at temperature of 700C leads to different interactions of Ti atoms between the layers, for various TiOx layer thicknesses (25–45 nm).

Festigkeitsverhalten der Al-Si-Gusslegierung AlSi12CuNiMg bei erhöhten Temperaturen

Magdeburg, Univ., Fak. für Maschinenbau, Diss., 2011

Impact of casting parameters and chemical composition on the solidification behaviour of Al-Si-Cu hypoeutectic alloy

Magdeburg, Univ., Fak. für Maschinenbau, Diss., 2010

Epitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates

Magdeburg, Univ., Fak. für Naturwiss., Diss., 2010

Einstellung der mechanischen Eigenschaften eines Mo-Si-B Werkstoffes durch Optimierung der pulvermetallurgischen Herstellung

Magdeburg, Univ., Fak. für Maschinenbau, Diss., 2011

Polymerabgeleitete Keramiken im System Si-O-C(-N)-Ta

Magdeburg, Univ., Fak. für Maschinenbau, Diss., 2013

Improving TCP Performance on CSMA/CA Connections

In IP networks, most of packets, that have been dropped, are recovered after the expiration of retransmission timeouts. These can result in unnecessary retransmissions and needless reduction of congestion window. An inappropriate retransmission timeout has a huge impact on TCP performance. In this paper we have proved that CSMA/CA mechanism can cause TCP retransmissions due to CSMA/CA effects. For this we have observed three wireless connections that use CSMA/CA: with good link quality, poor link quality and in presence of cross traffic. The measurements have been performed using real devices. Through tracking of each transmitted packet it is possible to analyze the relation between one-way delay and packet loss probability and the cumulative distribution of distances between peaks of OWDs. The distribution of OWDs and the distances between peaks of OWDs are the most important parameters of tuning TCP retransmission timeout on CSMA/CA networks. A new perspective through investigating the dynamical relation between one-way delay and packet loss ratio depending on the link quality to enhance the TCP performance has been provided.

Wachstumsoptimierung und Charakterisierung von MOVPE-basierten GaN Pufferstrukturen auf Si(111) Substraten

Magdeburg, Univ., Fak. für Naturwiss., Diss., 2014

Formular un model de formació professionalitzador adreçada al professorat d’aules de semiimmersió (FOPP-SI)

L’aparició de la demanda d’un nou tipus de professor de primària i secundària, que ha d’afegir a les competències professionals fins ara exigibles de tot bon professor, la capacitat d’ensenyar la seva matèria a través d’una llengua estrangera en aules denominades AICLE (Aprenentatge Integrat de Continguts i Llengua) en Semiimmersió (SI) justifica el treball desenvolupat en el marc del projecte 2006ARIE10011. Els formadors del Màster en Formació Inicial del Professorat de Secundària (FIPS) de la UAB (especialitats d’anglès, ciències socials i ciències naturals) i del Curs de Qualificació Pedagògica (CQP) de la UdL (especialitat d’anglès) han col•laborat en el disseny d’un component formatiu en tècniques d’ensenyament AICLE (CLILC), com a constituent del futur Màster Oficial que habilitarà per al exercici de la professió Professor d’Educació Secundaria Obligatòria i Batxillerat (ORDEN ECI/3858/2007, de 27 desembre; BOE 312)(...)

I si deixem de parlar de preservació digital? Variacions sobre un tema de David Rosenthal, amb un poutpourri final amb la CDLib Orchestra

La preservació digital de la que parla la nostra literatura professional està plena de mites que pensem que s'han d'anar tombant un darrera l'altre, en aquesta presentació us els mencionarem.