Obtenção e caracterização de filmes SnO2 depositados em vidro borosilicato por silk-screen modificado: SnCl2.2H2O como precursor

O presente trabalho tem como objetivo investigar as características de filmes de SnO2 depositados em substrato de vidro borosilicato por um processo de silk-screen modificado para obtenção de espessura fina compatível com a aplicação em células solares policristalinas de baixo custo. O filme de SnO2 é um dos mais apropriados para obtenção de vidro TCO (transparent conductive oxide) para uso em células solares devido a sua baixa resistividade elétrica e alta transmitância, sendo quimicamente inerte, mecanicamente duro e tem resistência a altas temperaturas, o que facilita então a calcinação das amostras entre 500º C a 550º C. Os filmes foram obtidos a partir de uma solução precursora básica, preparada pela dissolução de SnCl2.2H2O em Etanol (99,5 %). Foi realizado um planejamento fatorial 2(3-1) para analisar a influência dos parâmetros concentração da solução precursora (CETN), temperatura de calcinação (TC) e taxa de aquecimento (tX) na calcinação, sendo a concentração CETN o parâmetro que apresentou maior efeito sobre os parâmetros de respostas investigados: espessura do filme (ω), resistividade de superfície (ρ) e a transmitância relativa (θ). Foi possível obter com a metodologia utilizada, filmes com espessuras da ordem de 1 Nm com resistividade de superfície de 10 / e transmitância relativa entre 70 e 80 %.

Interface Formation and Electrical Transport in SnO2:Eu3+/GaAs Heterojunction Deposited by Sol-Gel Dip-Coating and Resistive Evaporation

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Schottky emission in nanoscopically crystallized Ce-doped SnO2 thin films deposited by sol-gel-dip-coating

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da corrosão de cadinhos de SnO2-ZnO, na fusão de vidros contendo metais pesados

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dependence of the nonlinear electrical behavior of SnO2-based varistors on Cr2O3 addition

Tin dioxide varistors doped with Coo, ZnO, Ta2O5 and Cr2O3 were prepared by the mixed oxide method. Temperature dependent impedance spectroscopy revealed two different activation energies, one at low frequencies and the other at high frequencies. These activation energies were associated with the adsorption and reaction of O-2 species at the grain boundary interface. We show that Cr2O3 improves the varistor properties, generating sites for the adsorption of O' and O at the grain boundary region. The O' and O defects are truly responsible for the barrier formation at the grain boundary interface. (c) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Nanopore size growth and ultrafiltration performance of SnO2 ceramic membranes prepared by sol-gel route

Supported ceramic membranes have been produced by the sol-casting procedure from aqueous colloidal suspensions prepared by the sol-gel route. Coatings on a tubular alumina support have been successfully performed leading to crack free layers. Samples have been sintered at 400, 500 and 600 degreesC, and the effect of heating treatment on the nanostructure and on the ultrafiltration properties are analyzed. The characterization has been done by high resolution scanning electron microscopy, nitrogen adsorption-desorption isotherms, water permeation and cut-off determination using polyethylene glycol standard solutions. The micrographs have revealed that grains and pore size increase with the temperature, whereas their shape remains invariant. This results is in agreements with N-2 adsorption-desorption analyses, which have revealed that the mean pore size diameter increases from 4 to 10 nm as the sintering temperature increases from 400 to 600 degreesC, while the total porosity remains constant. Furthermore, the tortuosity, calculated from water permeability, is essentially invariant with the sintering temperatures. The membranes cut-off, determined with a retention rate equal to 95%, are 3500, 6500 and 9000 g . mol(-1) for 400, 500 and 600 degreesC, respectively, showing that the permeation properties of SnO2 ultrafiltration membranes can easily be controlled by sintering condition.

The effect of preparation method and Sb content on SnO2-CuO sintering

The sintering behavior of SnO2-CuO system has been investigated for two preparation methods and as a function of antimony concentration. A chemical preparation (Pechini's method) resulted in powders with smaller particle sizes than for a conventional oxide mixture. This led to smaller grain sizes in Pechini's method ceramics. The microstructures were heterogeneous in both systems, showing grain coarsening. The densification was aided by liquid phase formation, due to copper, in both systems, but the temperature of maximum shrinkage rate was larger for the Pechini's method ceramic because copper had to diffuse to the grain surface. Independently of the preparation method, antimony did not aid densification, and increasing its concentration led to a higher densification temperature and lower shrinkage rate. (C) 2003 Kluwer Academic Publishers.

Surface equilibrium angle for anisotropic grain growth in SnO2 systems

Usually, the kinetic models used in the study of sintered ceramic are performed by means of indirect physical tests, such as, results obtained from data of linear shrinkage and mass loss. This fact is justified by the difficulty in the determinations of intrinsic parameters of ceramic materials along every sintering process. In this way, the technique of atomic force microscopy (AFM) was used in order to determine the importance and the evolution of the dihedral angle in the sintering of 0.5 mol% MnO2-doped tin dioxide obtained by the polymeric precursor method.

SnO2 nanocrystals synthesized by microwave-assisted hydrothermal method: towards a relationship between structural and optical properties

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Relationship between grain-boundary capacitance and bulk shallow donors in SnO2 polycrystalline semiconductor

The relationship between grain-boundary capacitance and extrinsic shallow donors caused by Nb addition to SnO2 center dot COO binary polycrystalline system has been investigated by means of combined techniques such as I-V characteristic response, complex impedance and capacitance analysis and electrostatic force microscopy. The estimated role of the Nb doping is to increase the concentration of shallow donors that are capable of enhancing the electronic donation to grain-boundary acceptors. This effect leads to the formation of potential barriers at grain boundaries with a simultaneous increase of grain-boundary capacitance and non-Ohmic features of the polycrystalline device doped with Nb atoms.

Impedance spectroscopy analysis of SnO2 thick-films gas sensors

A careful analysis of the impedance response of SnO2 thick films under vacuum and air atmosphere is reported in the present work. The AC electrical resistance was analyzed and it was shown that it is highly frequency dependent. Different models and its equivalent circuit representation were proposed and carefully analyzed based on the microstructure features of the device. Basically, an interpretation of the frequency dependent resistance was proposed based on the fact that different grains characteristics and junctions exist. These different grains and junctions are the main source of resistance dependent feature. An equivalent circuit model, considering different grain sizes associated with different grain boundary junctions characteristics, was introduced so that a consistent interpretation of the results was possible.

SnO2 nanoparticles functionalized in amorphous silica and glass

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Preparação e caracterização do complexo sólido de estanho(II)-EDTA e influência do tratamento térmico sobre a morfologia do resíduo SnO2

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Vidros recobertos com camadas delgadas transparentes de SnO2

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Analysis of Er3+ incorporation in SnO2 by optical investigation

Er3+ emission in the wide bandgap matrix SnO2 is observed either through a direct Er ion excitation process as well as by an indirect process, through energy transfer in samples codoped with Yb3+ ions. Electron-hole generation in the tin dioxide matrix is also used to promote rare-earth ion excitation. Photoluminescence spectra as function of temperature indicate a slight decrease in the emission intensity with temperature increase, yielding low activation energy, about 3.8meV, since the emission even at room temperature is rather considerable.