非损伤性方法的建立及其在亚洲黑熊分子遗传学研究中的应用

采用Bio-Rad公司“InstaGene Purification Matrix”从遗落于地上的亚洲黑熊单根毛发样品中提取出基因组DNA。此法简便、快速、仅需一个步骤---在该试剂中以100℃裂解细胞。不必再经酚和氯仿抽提。用PCR技术从这种毛发DNA中扩增了线粒体细胞色素b基因片断, 并测定了该片段的DNA。此项工作为开展亚洲黑熊及其他哺乳动物野生群体的分子遗传学研究奠定了基础。

Shroud heat transfer measurements from a rotating cavity with an axial throughflow of air

The paper discusses measurements of heat transfer obtained from the inside surface of the peripheral shroud. The experiments were carried out on a rotating cavity, comprising two 0.985-m-dia disks, separated by an axial gap of 0.065 m and bounded at the circumference by a carbon fiber shroud. Tests were conducted with a heated shroud and either unheated or heated disks. When heated, the disks had the same temperature level and surface temperature distribution. Two different temperature distributions were tested; the surface temperature either increased, or decreased with radius. The effects of disk, shroud, and air temperature levels were also studied. Tests were carried out for the range of axial throughflow rates and speeds: 0.0025 ≤ m ≤ 0.2 kg/s and 12.5 ≤ Ω ≤ 125 rad/s, respectively. Measurements were also made of the temperature of the air inside the cavity. The shroud Nusselt numbers are found to depend on a Grashof number, which is defined using the centripetal acceleration. Providing the correct reference temperature is used, the measured Nusselt numbers also show similarity to those predicted by an established correlation for a horizontal plate in air. The heat transfer from the shroud is only weakly affected by the disk surface temperature distribution and temperature level. The heat transfer from the shroud appears to be affected by the Rossby number. A significant enhancement to the rotationally induced free convection occurs in the regions 2 ≤ Ro ≤ 4 and Ro ≥ 20. The first of these corresponds to a region where vortex breakdown has been observed. In the second region, the Rossby number may be sufficiently large for the central throughflow to affect the shroud heat transfer directly. Heating the shroud does not appear to affect the heat transfer from the disks significantly.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

Vertical CNT-Si photodiode array.

A photodiode consisting of nanopillars of thin-film silicon p-i-n on an array of vertically aligned carbon nanotubes (CNTs) with a noncontinuous cathode electrode is demonstrated. The structure exploits the intrinsic enhancement of the CNTs' electric field, which leads to reduction in the photodiode's operating voltage and response time and enhancement of optical coupling due to better light trapping, as compared with the conventional planar photodiode. These improvements translate to higher resolution and higher frame rate flat-panel imaging systems for a broad range of applications, including computed tomography and particle detection.

Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

Design of a fibre-optic disc accelerometer: theory and experiment

Mechanical principles of fibre-optic disc accelerometers (FODA) different from those assumed in previous calculation methods are presented. An FODA with a high sensitivity of 82 rad/ g and a resonance frequency of 360 Hz is designed and tested. In this system, the minimum measurable demodulation phase of the phase-generated carrier (PGC) is 10(-5) rad, and the minimum acceleration reaches 120 ng theoretically. This kind of FODA, with its high responsivity, all-optic-fibre configuration, small size, light weight and stiff shell housing, ensures effective performance in practice.

活性氧自由基与嘧啶碱基及其核苷反应的ESP研究

本文以MNP（2-methyl-2-nitrosopropane）为捕捉剂，利用自旋捕捉技术和ESR方法，室温条件下，研究了活性氧自由基与嘧啶碱基及其核苷在水溶液中的反应。确定了所产生的自由基类别，讨论了自由基的形成机制。在本工作中，我们在下列三种体系中，研究了活性氧自由基与嘧啶碱基及其核苷的反应。1.核黄素（B_2）水溶液中，O_2~-与嘧啶碱基及其核苷的反应。2.H_2O_2水溶液中，OH与嘧啶碱基及其核苷的反应。3.γ射线辐照水溶液过程中，OH与嘧啶碱基及其核苷的反应。在核黄素（B_2）水溶液中，通过U.V.光辐照，我们得到了活性氧自由基与尿嘧啶、胞嘧啶、胞苷、脱氧胞苷、胸腺嘧啶、胸腺核苷反应所产生的自由基，及由这些自由基与MNP自旋加合物的ESR谱。确认了自由基Ⅰ，Ⅱ，Ⅲ，Ⅳ，Ⅴ，Ⅵ的存在。为了判别与嘧啶碱基或嘧啶核苷反应的活性氧自由基的种类，我们在下列三种条件下进行了测试：（1）加入适量DETAPAC（2）通N_2或Ar除O_2；（3）加入H_2O_2酶，均未得到ESR信号。据此，我们排除了O_2~-与嘧啶碱基或嘧啶核革直接反应的可能性。确认与嘧啶碱基或嘧啶核苷发生直接反应的是OH，其形成是Fenton反应的结果。 Fe~(2+) ＋ O_2~- → H_2O_2 ＋ Fe~(3+) （a） Fe~(2+) ＋ H_2O_2 → ·OH ＋ OH~- ＋ Fe~(3+) （b）Fe~(3+) ＋ O_2~- → Fe~(2+)＋O_2 （c）通过Fenton反应，O_2~-转化成·OH，间接与嘧啶或核苷发生了反应。U.V.光照含有MNP和1％H_2O_2的样品水溶液，我们确定了·OH与嘧啶碱基及其核苷反应所产生的自由基Ⅰ，Ⅱ，Ⅲ，Ⅳ，Ⅴ，Ⅵ，Ⅶ，Ⅷ，Ⅸ，Ⅹ。发现，·OH与尿嘧啶及其核苷，胞嘧啶及其核苷的反应，主要有二种形式：其一，·OH加合到嘧啶环的C_5－C_6双键上，形成C_5位或C_6位自由基；其二，·OH夺取C_5位上的H，开成C_5'位自由基。·OH不与胸腺核苷的糖单元发生反应，仅与其嘧啶环反应，形成Nu位和C_5位自基。γ射线辐照过程中，·OH与嘧啶碱基及其核苷的反应与H_2O_2体系中的情况类似。辐照剂量则对反应的影响较大，低于1.0 * 10~4 rad，不发生反应；1.0 * 10~6 rad，则发生交联反应，只有1.0 * 10~5 rad的辐照剂量比较适宜。

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc-blende GaN/Ga0.85Al0.15N strained quantum well (100 Angstrom well width) have been investigated using a 6 X 6 Hamiltonian model including the heavy hole, Light hole, and spin-orbit split-off bands. At the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin-orbit split-off hole. Optical transitions between the valence subbands and the conduction subbands obey the Delta n=0 selection rule. At the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. The optical transitions do not obey the Delta n=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 10(19) cm(-3), there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5 X 10(18) cm(-3), which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J(rad) is 0.53 kA/cm(2) for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors. (C) 1996 American Institute of Physics.

Michelson干涉仪式光纤空气声传感器

介绍了一种用于直升机等低空目标探测的光纤空气声传感器.该传感器基于光纤Michelson干涉仪的原理,结合弹性盘片的应力应变理论分析和光纤粘接的工艺设计,采用相位载波解调技术进行信号解调.对比实验测试验证了这种声音探测技术可行性.传感器理论灵敏度为2.38 rad/Pa,实测灵敏度为1.5 rad/Pa,采用PGC相位解调理论最小可探测的最小声信号为6.7 μPa,即9.5 dB.传感器在20～300 Hz范围内响应基本平坦.结合声音传播规律分析并肯定其在实用中的可行性.

抗辐射128kb PDSOI静态随机存储器

介绍在部分耗尽绝缘体上硅(PD SOI)衬底上形成的抗辐射128kb静态随机存储器.在设计过程中,利用SOI器件所具有的特性,对电路进行精心的设计和层次化版图绘制,通过对关键路径和版图后全芯片的仿真,使得芯片一次流片成功.基于部分耗尽SOI材料本身所具有的抗辐射特性,通过采用存储单元完全体接触技术和H型栅晶体管技术,不仅降低了芯片的功耗,而且提高了芯片的总体抗辐射水平.经过测试,芯片的动态工作电流典型值为20mA@10MHz,抗总剂量率水平达到500krad(Si),瞬态剂量率水平超过2.45×10~(11) rad(Si)/s.这些设计实践必将进一步推动PD SOI CMOS工艺的研发,并为更大规模抗辐射电路的加固设计提供更多经验.

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

An Ameliorated Phase Generated Carrier Demodulation Algorithm With Low Harmonic Distortion and High Stability

A novel ameliorated phase generated carrier (PGC) demodulation algorithm based on arctangent function and differential-self-multiplying (DSM) is proposed in this paper. The harmonic distortion due to nonlinearity and the stability with light intensity disturbance (LID) are investigated both theoretically and experimentally. The nonlinearity of the PGC demodulation algorithm has been analyzed and an analytical expression of the total-harmonic-distortion (THD) has been derived. Experimental results have confirmed the low harmonic distortion of the ameliorated PGC algorithm as expected by the theoretical analysis. Compared with the traditional PGC-arctan and PGC-DCM algorithm, the ameliorated PGC algorithm has a much lower THD as well as a better signal-to-noise-and-distortion (SINAD). A THD of below 0.1% and a SINAD of 60 dB have been achieved with PGC modulation depth (value) ranges from 1.5 to 3.5 rad. The stability performance with LID has also been studied. The ameliorated PGC algorithm has a much higher stability than the PGC-DCM algorithm. It can keep stable operations with LID depth as large as 26.5 dB and LID frequency as high as 1 kHz. The system employing the ameliorated PGC demodulation algorithm has a minimum detectable phase shift of 5 mu rad/root Hz @ 1 kHz, a large dynamic range of 120 dB @ 100 Hz, and a high linearity of better than 99.99%.

辐射基因治疗黑色素瘤的实验研究

研究低剂量辐射结合腺病毒(AdCMV)载体介导的p53基因转导对人黑色素瘤A375细胞系基因转移效率和辐射敏感性的影响。用复制缺陷的重组腺病毒载体(AdCMV-p53)介导人p53基因转染1GyX-射线预辐照的A375细胞系,RT-PCR检测mRNA水平,流式细胞仪测定细胞周期阻滞及外源性P53蛋白表达情况,克隆形成率测定辐射后细胞存活率。用携带报道基因的复制缺陷重组腺病毒载体AdCMV-GFP作为对照。实验结果表明,1GyX-射线辐照可较高地增加AdCMV-p53对A375细胞的基因转导效率,转导的外源性野生型p53可在A375(wtp53)细胞中高效表达,并诱导细胞周期G1期阻滞;单纯转导p53对A375细胞无明显诱导凋亡和生长抑制效应;而转导p53后给予X-射线辐射,当剂量达到4Gy及其以上时,48h后AdCMV-p53感染组细胞开始出现明显形态改变,克隆存活率明显低于AdCMV-GFP感染组和未感染组,显示存活曲线下移,4Gy时细胞存活率就减少了1个量级。小剂量辐射既可有效增加AdCMV-p53介导的p53转导,又不会对患者产生明显副作用;转导野生型p53的人黑色素瘤A375细胞系显示P53过表达;过表达的P53蛋白虽然对A375细胞无明显生长抑制及凋亡诱导作用,但可明显增加其辐射敏感性。这表明p53是基因治疗黑色素瘤较好的侯选基因,也为临床上放疗联合基因治疗黑色素瘤提供了实验室依据,即减轻临床上对于辐射敏感性差的肿瘤单纯大剂量照射或单纯基因疗法中rAd-p53制品用量过大而给病人造成的毒副作用。