Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 muJ 52 ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEM00-mode.

An investigation on the pressure-induced phase transition of nanocrystalline ZnS

An in situ energy dispersive x-ray diffraction study on nanocrystalline ZnS was carried out under high pressure up to 30.8 GPa by using a diamond anvil cell. The phase transition from the wurtzite to the zinc-blende structure occurred at 11.5 GPa, and another obvious transition to a new phase with rock-salt structure also appeared at 16.0 GPa-which was higher than the value for the bulk material. The bulk modulus and the pressure derivative of nanocrystalline ZnS were derived by fitting the Birch-Murnaghan equation. The resulting modulus was higher than that of the corresponding bulk material, indicating that the nanomaterial has higher hardness than the bulk material.

Pressure-induced phase transition of nanocrystalline zinc sulfide

In situ energy dispersive X-ray diffraction measurements on nanocrystalline zinc sulfide have been performed by using diamond anvil cell with synchrotron radiation. There is a phase transition which the ultimate structure is rocksalt when the pressure is up to 16.0GPa. Comparing the structure of body materials, the pressure of the phase transition of nano zinc sulfide is high. We fit the: Birch-Murnaghan equation of state and obtained its ambient pressure bulk modulus and its pressure derivative. The bulk modulus of nanocrystalline zinc sulfide is higher than that of body materials, it indicate that the rigidity of nanocrystalline zinc sulfide is high.

Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN

Both Fourier transform infrared (FTIR) grazing incidence reflectivity and FTIR transmission methods have been used to study GaN films grown on alpha-Al2O3 (0001) substrates by atmospheric pressure metal-organic chemical vapor deposition and low pressure metal-organic chemical vapor deposition. The results show that in the frequency range from 400 to 3500 cm(-1) the signal-to-noise ratio of the FTIR grazing incidence measurement is far higher than that of the FTIR transmission measurement. Some new vibrational structures appearing in the former measurement have been discussed. The features around 1460 and 1300 cm(-1) are tentatively assigned to scissoring and wagging local vibrational modes of CH2 in GaN, respectively. (C) 1999 American Institute of Physics. [S0021-8979(99)06509-3].

Study on the oxygen concentration reduction in heavily Sb-doped silicon

It was determined that oxygen concentration in heavily Sb-doped silicon was about 40% lower than that in the lightly doped Czochralski grown silicon and decreased with increasing content of Sb by means of coincident elastic recoil detection analysis. Through thermodynamic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of SiO, and Sb2O3 evaporation can be neglected. The basic reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when element Sb with larger radius doped degenerately into silicon crystal. (C) 1999 Elsevier Science B.V. All rights reserved.

镉、铅对东北典型地区不同品种大白菜胁迫效应研究

随着工农业的快速发展，土壤重金属污染问题日益严重，在我国东北，大面积的蔬菜种植地受到Cd、Pb的污染。大白菜在东北地区一直得到广泛种植，然而，Cd、Pb单一及复合污染对这一地区大白菜的胁迫效应仍然缺乏系统的研究。本研究以辽宁省普遍种植的四种大白菜（抗病金春KB、东洋春夏DY、青绿王QL、强势QS）为对象，用发芽实验、砂培实验和盆栽实验，研究了Cd、Pb单一及复合胁迫下大白菜的生理生化变化。 在发芽阶段，Cd、Pb单一及复合胁迫下，重金属浓度与根长、芽长和生物量抑制率间呈极显著线性相关，根伸长对Cd、Pb的毒害最敏感。KB对Cd毒害的抗性最强，DY对Pb单一和Cd、Pb复合胁迫的抗性最强，而QS对Cd、Pb单一及复合胁迫的抗性最弱。Cd、Pb复合胁迫时，对根伸长、芽伸长和生物量抑制的联合作用类型都为相加作用。 砂培实验中，在Cd、Pb浓度较低时，4种大白菜超氧化物歧化酶（SOD）、过氧化物酶（POD）和过氧化氢酶（CAT）活性及丙二醛（MDA）、可溶性蛋白（SP）、脯氨酸（PRO）含量都不同程度提高，但是随Cd、Pb浓度的提高，各生理过程受到抑制。KB和QS中PRO的含量约是DY和QL中的2-3倍，高PRO累积量很可能是Cd、Pb耐性大白菜品种所具有的特点。 盆栽实验中，在各生长时期，抗氧化酶活性、抗坏血酸（AsA）和还原型谷胱甘肽（GSH），及可溶性糖和SP的含量随Cd、Pb浓度的提高先升高后下降。硝态氮的含量基本随Cd、Pb浓度的提高而上升。在整个实验期间，KB和QS中MDA都保持较低的水平，KB对Cd、Pb的耐性主要是由于其体内PRO及AsA、GSH等抗氧化剂的累积；而GSH和可溶性糖对QS的Cd、Pb耐性起重要作用。QL和DY中MDA的含量要高于KB和QS，它们体内的抗氧化酶活性，及PRO、AsA和GSH含量在某个生长时期会达到较高的水平，但是与KB和QS相比，这些变化并不稳定，所以比KB和QS对Cd、Pb的耐性要弱。