Characterization of the manufacturing processes to grow triple-junction solar cells

A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested.

The segmental approximation in multijunction solar cells

The segmental approach has been considered to analyze dark and light I-V curves. The photovoltaic (PV) dependence of the open-circuit voltage (Voc), the maximum power point voltage (Vm), the efficiency (?) on the photogenerated current (Jg), or on the sunlight concentration ratio (X), are analyzed, as well as other photovoltaic characteristics of multijunction solar cells. The characteristics being analyzed are split into monoexponential (linear in the semilogarithmic scale) portions, each of which is characterized by a definite value of the ideality factor A and preexponential current J0. The monoexponentiality ensures advantages, since at many steps of the analysis, one can use the analytical dependences instead of numerical methods. In this work, an experimental procedure for obtaining the necessary parameters has been proposed, and an analysis of GaInP/GaInAs/Ge triple-junction solar cell characteristics has been carried out. It has been shown that up to the sunlight concentration ratios, at which the efficiency maximum is achieved, the results of calculation of dark and light I-V curves by the segmental method fit well with the experimental data. An important consequence of this work is the feasibility of acquiring the resistanceless dark and light I-V curves, which can be used for obtaining the I-V curves characterizing the losses in the transport part of a solar cell.

Stability threshold approach for complex dynamical systems

Acknowledgments This paper was developed within the scope of the IRTG 1740/TRP 2011/50151-0, funded by the DFG/FAPESP, and supported by the Government of the Russian Federation (Agreement No. 14.Z50.31.0033 with the Institute of Applied Physics RAS). The first author thanks Dr Roman Ovsyannikov for valuable discussions regarding estimation of the mistake probability.

Rapid restoration of visual pigment and function with oral retinoid in a mouse model of childhood blindness

Mutations in the retinal pigment epithelium gene encoding RPE65 are a cause of the incurable early-onset recessive human retinal degenerations known as Leber congenital amaurosis. Rpe65-deficient mice, a model of Leber congenital amaurosis, have no rod photopigment and severely impaired rod physiology. We analyzed retinoid flow in this model and then intervened by using oral 9-cis-retinal, attempting to bypass the biochemical block caused by the genetic abnormality. Within 48 h, there was formation of rod photopigment and dramatic improvement in rod physiology, thus demonstrating that mechanism-based pharmacological intervention has the potential to restore vision in otherwise incurable genetic retinal degenerations.

Le Botaniste.

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The University of Kansas science bulletin.

v.49:no.1-8 (1970-1971)