Characterization of the manufacturing processes to grow triple-junction solar cells
Data(s) |
2014
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Resumo |
A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Publicador |
E.T.S.I. Telecomunicación (UPM) |
Relação |
http://oa.upm.es/35680/1/INVE_MEM_2014_182303.pdf http://www.hindawi.com/journals/ijp/2014/836284/ info:eu-repo/semantics/altIdentifier/doi/10.1155/2014/836284 |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
International Journal of Photoenergy, ISSN 1110-662X, 2014, Vol. 2014 |
Palavras-Chave | #Telecomunicaciones |
Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |