987 resultados para Presión de vapor


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We report a detailed study of surface-bound chemical vapor deposition of carbon nanotubes and nanofibers from evaporated transition metal catalysts exposed to ammonia diluted acetylene. We show that a reduction of the Fe/Co catalyst film thickness below 3 nm results into a transition from large diameter (> 40 nm), bamboo-like nanofibers to small diameter (similar to 5 nm) multi-walled carbon nanotubes. The nanostructuring of ultrathin catalyst films critically depends on the gas atmosphere, with the resulting island distribution initiating the carbon nucleation. Compared to purely thermal chemical vapor deposition, we find that, for small diameter nanotube growth, DC plasma assistance is detrimental to graphitization and sample homogeneity and cannot prevent an early catalyst poisoning. (c) 2006 Elsevier B.V. All rights reserved.

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Vertically aligned carbon nanotubes were synthesized by plasma enhanced chemical vapor deposition using nickel as a metal catalyst. High resolution transmission electron microscopy analysis of the particle found at the tip of the tubes reveals the presence of a metastable carbide Ni3C. Since the carbide is found to decompose upon annealing at 600 degreesC, we suggest that Ni3C is formed after the growth is stopped due to the rapid cooling of the Ni-C interstitial solid solution. A detailed description of the tip growth mechanism is given, that accounts for the composite structure of the tube walls. The shape and size of the catalytic particle determine the concentration gradient that drives the diffusion of C atoms across and though the metal. (C) 2004 American Institute of Physics.

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This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.

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The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.

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Classical theories have successfully provided an explanation for convection in a liquid layer heated from below without evaporation. However, these theories are inadequate to account for the convective instabilities in an evaporating liquid layer, especially in the case when it is cooled from below. In the present paper, we study the onset of Marangoni convection in a liquid layer being overlain by a vapor layer.A new two-sided model is put forward instead of the one-sided model in previous studies. Marangoni-Bénard instabilities in evaporating liquid thin layers are investigated with a linear instability analysis. We define a new evaporation Biot number, which is different from that in previous studies and discuss the influences of reference evaporating velocity and evaporation Biot number on the vapor-liquid system. At the end, we explain why the instability occurs even when an evaporating liquid layer is cooled from below.

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Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

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El estudio se realizó con la participación de representantes de 15 comunidades del municipio de El Castillo, Río San Juan. Este estudio es parte del Programa de Fortalecimiento al Desarrollo Integral del Departamento de Río San Juan, impulsado por la Facultad de Recursos Naturales y el Ambiente de la Universidad Nacional Agraria. Considerando que en este municipio se observa un avance acelerado de la frontera agrícola, se planteó la necesidad de analizar las principales causas sociales, económicas y tecnológicas que influyen en el avance de la frontera agrícola y proponer alternativas que contribuyan a disminuir su avance. La metodología implementada fue de carácter descriptivo y con técnicas cualitativas de grupos focales y entrevistas individuales. El procesamiento de los datos se realizó a través una matriz de ordenamiento de la información; para determinar el grado de involucramiento e interacción de las entidades estatales y organismos no gubernamentales se elaboró un diagrama de actores. Las causas se delimitaron mediante la implementación del diagrama de Ishikawa (causaefecto). Los factores que inciden en el área son de dos tipos, aquellos que implican fuerzas de presión sobre el avance de la frontera agrícola (sociales y económicos) y los que presentan limitantes (tecnológicos y políticos) en el proceso de contribuir a su reducción. Se consideró la necesidad de hacer cambios en los mecanismos de gobernanza de los bosques de manera integral, basados en un enfoque social y tomando en cuenta las condiciones de la población, la conservación y protección de la Reserva Biológica Indio Maíz y finalmente la cohesión con las entidades de carácter público y privado.

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[ES] Uno de los motivos de mayor peso que inducen a las organizaciones a la implantación de sistemas de gestión medioambiental es la presión ejercida por los grupos de interés. La investigación aporta resultados sobre cuál es la influencia de los grupos de interés sobre la gestión medioambiental. Con este fin hemos analizado 142 centros de negocio españoles, poseedores de los certificados ISO 14000 y/o EMAS, estableciendo la relación de los grupos de interés y su influencia con el modo en que se realiza en dichas organizaciones la gestión medioambiental.

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Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

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A space experiment on bubble behavior and heat transfer in subcooled pool boiling phenomenon has been performed utilizing the temperature-controlled pool boiling (TCPB) device both in normal gravity in the laboratory and in microgravity aboard the 22(nd) Chinese recoverable satellite. The fluid is R113 at 0.1 MPa and subcooled by 26 degrees C nominally. A thin platinum wire of 60 mu m in diameter and 30mm in length is simultaneously used as heater and thermometer. Only the lateral motion and the departure of discrete vapor bubbles in nucleate pool boiling are reported and analyzed in the present paper. A scale analysis on the Marangoni convection surrounding a bubble in the process of subcooled nucleate pool boiling leads to formulas of the characteristic velocity of the lateral motion and its observability. The predictions consist with the experimental observations. Considering the Marangoni effect, a new qualitative model is proposed to reveal the mechanism underlying the bubble departure processes and a quantitative agreement can also be acquired.

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La hipertensión arterial es un problema de salud pública de gran dimensión, constituyendo el factor de riesgo cardiovascular más frecuente en nuestro país. Su alta prevalencia y la posibilidad de ejercer un buen control tanto de la patología en sí misma, como de sus consecuencias derivadas, la convierten en un problema de gran interés sociosanitario. Por todo ello, el propósito de este proyecto de investigación es investigar la eficacia de la respiración controlada y de las técnicas de relajación por respiración en la disminución y el control de las cifras de presión arterial, ya que puede servir de instrumento para mejorar la atención sanitaria a la persona hipertensa.