The mobility of Nb in rutile-saturated NaCl- and NaF-bearing aqueous fluids from 1-6.5 GPa and 300-800 °C

Rutile (TiO2) is an important host phase for high field strength elements (HFSE) such as Nb in metamorphic and subduction zone environments. The observed depletion of Nb in arc rocks is often explained by the hypothesis that rutile sequesters HFSE in the subducted slab and overlying sediment, and is chemically inert with respect to aqueous fluids evolved during prograde metamorphism in the forearc to subarc environment. However, field observations of exhumed terranes, and experimental studies, indicate that HFSE may be soluble in complex aqueous fluids at high pressure (i.e., >0.5 GPa) and moderate to high temperature (i.e., >300 degrees C). In this study, we investigated experimentally the mobility of Nb in NaCl- and NaF-bearing aqueous fluids in equilibrium with Nb-bearing rutile at pressure-temperature conditions applicable to fluid evolution in arc environments. Niobium concentrations in aqueous fluid at rutile saturation were measured directly by using a hydrothermal diamond-anvil cell (HDAC) and synchrotron X-ray fluorescence (SXRF) at 2.1 to 6.5 GPa and 300-500 degrees C, and indirectly by performing mass loss experiments in a piston-cylinder (PC) apparatus at similar to 1 GPa and 700-800 degrees C. The concentration of Nb in a 10 wt% NaCl aqueous fluid increases from 6 to 11 mu g/g as temperature increases from 300 to 500 degrees C, over a pressure range from 2.1 to 2.8 GPa, consistent with a positive temperature dependence. The concentration of Nb in a 20 wt% NaCl aqueous fluid varies from 55 to 150 mu g/g at 300 to 500 degrees C, over a pressure range from 1.8 to 6.4 GPa; however, there is no discernible temperature or pressure dependence. The Nb concentration in a 4 wt% NaF-bearing aqueous fluid increases from 180 to 910 mu g/g as temperature increases from 300 to 500 degrees C over the pressure range 2.1 to 6.5 GPa. The data for the F-bearing fluid indicate that the Nb content of the fluid exhibits a dependence on temperature between 300 and 500 degrees C at >= 2 GPa, but there is no observed dependence on pressure. Together, the data demonstrate that the hydrothermal mobility of Nb is strongly controlled by the composition of the fluid, consistent with published data for Ti. At all experimental conditions, however, the concentration of Nb in the fluid is always lower than coexisting rutile, consistent with a role for rutile in moderating the Nb budget of arc rocks.

Diatom abundance and paleo-temperature reconstruction for sediment cores from the southeast Norwegian Sea

Although the pulsating nature and the abruptness of the last deglaciation are well documented in marine and land records, very few marine records have so far been able to capture the high-frequency climatic changes recorded in the Greenland ice core Dye 3. We studied high-resolution sediment cores from SE Norwegian Sea, which display a detailed climatic record during the last deglaciation comparable to that of Dye 3. Accelerator mass spectrometry age control of the cores enables us to correlate this record in detail with continental records. The results indicate that the surface waters of the SE Norwegian Sea were seasonally ice free after 13,400 B.P. The Bølling/Allerød interstadial complex (13,200-11,200 B.P.) was a climatically unstable period with changing Arctic-Subarctic conditions. This period was punctuated by four progressively more severe sea surface temperature (SST) minima: between 12,900-12,800 B.P. (BCP I); 12,500-12,400 B.P. (BCP II); 12,300-12,000 B.P. (OD I); and 11,800-11,500 B.P. (OD II). The Younger Dryas (YD) (11,200-10,200 B.P.) represents the severest and most prolonged cold episode of this series of climatic deteriorations. It was bounded by very rapid SST changes and characterized by Arctic-Polar conditions. The first true warm Atlantic water incursion to the SE Norwegian Sea took place around 10,100 B.P., followed by a brief cooler condition between 9900-9600 B.P. (YD II). The early Holocene climatic optimum occurred between 8000-5000 B.P. A conceptual model is proposed where meltwater fluxes are suggested to cause the observed instability in the SST record.

The relationship between self-awareness of attentional status, behavioral performance and oscillatory brain rhythms

High-level cognitive factors, including self-awareness, are believed to play an important role in human visual perception. The principal aim of this study was to determine whether oscillatory brain rhythms play a role in the neural processes involved in self-monitoring attentional status. To do so we measured cortical activity using magnetoencephalography (MEG) and functional magnetic resonance imaging (fMRI) while participants were asked to self-monitor their internal status, only initiating the presentation of a stimulus when they perceived their attentional focus to be maximal. We employed a hierarchical Bayesian method that uses fMRI results as soft-constrained spatial information to solve the MEG inverse problem, allowing us to estimate cortical currents in the order of millimeters and milliseconds. Our results show that, during self-monitoring of internal status, there was a sustained decrease in power within the 7-13 Hz (alpha) range in the rostral cingulate motor area (rCMA) on the human medial wall, beginning approximately 430 msec after the trial start (p < 0.05, FDR corrected). We also show that gamma-band power (41-47 Hz) within this area was positively correlated with task performance from 40-640 msec after the trial start (r = 0.71, p < 0.05). We conclude: (1) the rCMA is involved in processes governing self-monitoring of internal status; and (2) the qualitative differences between alpha and gamma activity are reflective of their different roles in self-monitoring internal states. We suggest that alpha suppression may reflect a strengthening of top-down interareal connections, while a positive correlation between gamma activity and task performance indicates that gamma may play an important role in guiding visuomotor behavior. © 2013 Yamagishi et al.

Impedance-fatigue correlated studies on SrBi2Ta2O9

Ceramic samples of SrBi2Ta2O9 (SBT) were prepared by the solid state reaction method with a view to study their electrical properties. Reasons as to why SBT shows better fatigue endurance than conventional perovskites like Pb(Zr, Ti)O-3 are looked into. Complex impedance spectroscopy (CIS) was used as a tool to do so. CIS data was acquired over the temperature range from room temperature to 500 degrees C over a wide range of frequencies. Electrical conductivity data indicates that the conductivity in SBT is essentially due to oxygen vacancies and the activation energy for conduction in the high temperature region was found to be 0.95 eV. CIS was used to separate out the bulk and the interfacial contributions to complex impedance.

Microemulsion-mediated synthesis of cobalt (pure fcc and hexagonal phases) and cobalt-nickel alloy nanoparticles

By choosing appropriate microemulsion systems, hexagonal cobalt (Co) and cobalt-nickel (1:1) alloy nanoparticles have been obtained with cetyltrimethylammonium bromide as a cationic surfactant at 500 degrees C. This method thus stabilizes the hcp cobalt even at sizes (<10 nm) at which normally fcc cobalt is predicted to be stable. On annealing the hcp cobalt nanoparticles in H-2 at 700 degrees C we could transform them to fcc cobalt nanoparticles. Microscopy studies show the formation of spherical nanoparticles of hexagonal and cubic forms of cobalt and Co-Ni (1:1) alloy nanoparticles with the average size of 4, 8 and 20 nm, respectively. Electrochemical studies show that the catalytic property towards oxygen evolution is dependent on the applied voltage. At low voltage (less than 0.65 V) the Co (hexagonal) nanoparticles are superior to the alloy (Co-Ni) nanoparticles while above this voltage the alloy nanoparticles are more efficient catalysts. The nanoparticles of cobalt (hcp and fcc) and alloy (Co-Ni) nanoparticles show ferromagnetism. The saturation magnetization of Co-Ni nanoparticles is reduced compared to the bulk possibly due to surface oxidation.

Atomic Layer Deposition of Multicomponent Oxide Materials

Atomic layer deposition (ALD) is a method for thin film deposition which has been extensively studied for binary oxide thin film growth. Studies on multicomponent oxide growth by ALD remain relatively few owing to the increased number of factors that come into play when more than one metal is employed. More metal precursors are required, and the surface may change significantly during successive stages of the growth. Multicomponent oxide thin films can be prepared in a well-controlled way as long as the same principle that makes binary oxide ALD work so well is followed for each constituent element: in short, the film growth has to be self-limiting. ALD of various multicomponent oxides was studied. SrTiO3, BaTiO3, Ba(1-x)SrxTiO3 (BST), SrTa2O6, Bi4Ti3O12, BiTaO4 and SrBi2Ta2O9 (SBT) thin films were prepared, many of them for the first time by ALD. Chemistries of the binary oxides are shown to influence the processing of their multicomponent counterparts. The compatibility of precursor volatilities, thermal stabilities and reactivities is essential for multicomponent oxide ALD, but it should be noted that the main reactive species, the growing film itself, must also be compatible with self-limiting growth chemistry. In the cases of BaO and Bi2O3 the growth of the binary oxide was very difficult, but the presence of Ti or Ta in the growing film made self-limiting growth possible. The application of the deposited films as dielectric and ferroelectric materials was studied. Post-deposition annealing treatments in different atmospheres were used to achieve the desired crystalline phase or, more generally, to improve electrical properties. Electrode materials strongly influenced the leakage current densities in the prepared metal insulator metal (MIM) capacitors. Film permittivities above 100 and leakage current densities below 110-7 A/cm2 were achieved with several of the materials.

Structural Investigation of Activated Lattice Oxygen in Ce1-xSnxO2 and Ce1-x-ySnxPdyO2-delta by EXAFS and DFT calculation

Substitution of Sn4+ ion in CeO2 creates activated oxygen in Ce0.8Sn0.2O2 leading to higher oxygen storage capacity compared to Ce0.8Zr0.2O2. With Pd ion substitution in Ce0.8Sn0.2O2,activation of oxygen is further enhanced as observed from the H-2/TPR study. Both EXAFS analysis and DFT calculation reveal that in the solid solution Ceexhibits 4 + 4 coordination, Sri exhibits 4 + 2 + 2 coordination and Pd has 4 + 3 coordination. While the oxygen in the First four coordination with short M-O bonds are strongly held in the lattice, the oxygens in the second and higher coordinations with long M-O bonds are weakly bound, and they are the activated oxygen ill the lattice. Bond valence analysis shows that oxygen with valencies as low its 1.65 are created by the Sn and Pd ion Substitution. Another interesting observation is that H-2/TPR experiment of Ce1-xSnxO2 shows a broad peak starting from 200 to 500 degrees C, while the same reduction is achieved in a single step at similar to 110 degrees C in presence Pd2+ on. Substitution of Pd2+ ion thus facilitates synergistic reduction of the catalyst at lower temperature. We have shown that simultaneous reduction of the Ce4+ and Sr4+ ions by Pd-0 is the synergistic interaction leading to high oxygen storage capacity at low temperature.

Compact fiber Bragg grating dynamic strain sensor cum broadband thermometer for thermally unstable ambience

An instrument for simultaneous measurement of dynamic strain and temperature in a thermally unstable ambience has been proposed, based on fiber Bragg grating technology. The instrument can function as a compact and stand-alone broadband thermometer and a dynamic strain gauge. It employs a source wavelength tracking procedure for linear dependence of the output on the measurand, offering high dynamic range. Two schemes have been demonstrated with their relative merits. As a thermometer, the present instrumental configuration can offer a linear response in excess of 500 degrees C that can be easily extended by adding a suitable grating and source without any alteration in the procedure. Temperature sensitivity is about 0.06 degrees C for a bandwidth of 1 Hz. For the current grating, the upper limit of strain measurement is about 150 mu epsilon with a sensitivity of about 80 n epsilon Hz(-1/2). The major source of uncertainty associated with dynamic strain measurement is the laser source intensity noise, which is of broad spectral band. A low noise source device or the use of optical power regulators can offer improved performance. The total harmonic distortion is less than 0.5% up to about 50 mu epsilon, 1.2% at 100 mu epsilon and about 2.3% at 150 mu epsilon. Calibrated results of temperature and strain measurement with the instrument have been presented. Traces of ultrasound signals recorded by the system at 200 kHz, in an ambience of 100-200 degrees C temperature fluctuation, have been included. Also, the vibration spectrum and engine temperature of a running internal combustion engine has been recorded as a realistic application of the system.

Dielectric anomaly in Li-doped zinc oxide thin films grown by sol-gel route

Sol-gel route was employed to grow polycrystalline thin films of Li-doped ZnO thin films (Zn1-xLixO, x=0.15). Polycrystalline films were obtained at a growth temperature of 400-500 degrees C. Ferroelectricity in Zn0.85Li0.15O was verified by examining the temperature variation of the real and imaginary parts of dielectric constant, and from the C-V measurements. The phase transition temperature was found to be 330 K. The room-temperature dielectric constant and dissipation factor were 15.5 and 0.09 respectively, at a frequency of 100 kHz. The films exhibited well-defined hysteresis loop, and the values of spontaneous polarization (P-s) and coercive field were 0.15 mu C/cm(2) and 20 kV/cm, respectively, confirming the presence of ferroelectricity.

Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation

Li-doped ZnO thin films (Zn1-xLixO, x=0.05-0.15) were grown by pulsed-laser ablation technique. Highly c-axis-oriented films were obtained at a growth temperature of 500 degrees C. Ferroelectricity in Zn1-xLixO was found from the temperature-dependent dielectric constant and from the polarization hysteresis loop. The transition temperature (T-c) varied from 290 to 330 K as the Li concentration increased from 0.05 to 0.15. It was found that the maximum value of the dielectric constant at T-c is a function of Li concentration. A symmetric increase in memory window with the applied gate voltage is observed for the ferroelectric thin films on a p-type Si substrate. A ferroelectric P-E hysteresis loop was observed for all the compositions. The spontaneous polarization (P-s) and coercive field (E-c) of 0.6 mu C/cm(2) and 45 kV/cm were obtained for Zn0.85Li0.15O thin films. These observations reveal that partial replacement of host Zn by Li ions induces a ferroelectric phase in the wurtzite-ZnO semiconductor. The dc transport studies revealed an Ohmic behavior in the lower-voltage region and space-charge-limited conduction prevailed at higher voltages. The optical constants were evaluated from the transmission spectrum and it was found that Li substitution in ZnO enhances the dielectric constant.

Influence of Substrate Temperature and Deposition Rate on Structural and Mechanical Properties of Shape Memory NiTi Films

NiTi thin films deposited by DC magnetron sputtering of an alloy (Ni/Ti:45/55) target at different deposition rates and substrate temperatures were analyzed for their structure and mechanical properties. The crystalline structure, phase-transformation and mechanical response were characterized by X-ray diffraction (XRD), Differential Scanning Calorimetry (DSC) and Nano-indentation techniques, respectively. The films were deposited on silicon substrates maintained at temperatures in the range 300 to 500 degrees C and post-annealed at 600 degrees C for four hours to ensure film crystallinity. Films deposited at 300 degrees C and annealed for 600 degrees C have exhibited crystalline behavior with Austenite phase as the prominent phase. Deposition onto substrates held at higher deposition temperatures (400 and 500 degrees C) resulted in the co-existence of Austenite phase along with Martensite phase. The increase in deposition rates corresponding to increase in cathode current from 250 to 350 mA has also resulted in the appearance of Martensite phase as well as improvement in crystallinity. XRD analysis revealed that the crystalline film structure is strongly influenced by process parameters such as substrate temperature and deposition rate. DSC results indicate that the film deposited at 300 degrees C had its crystallization temperature at 445 degrees C in the first thermal cycle, which is further confirmed by stress temperature response. In the second thermal cycle the Austenite and Martensite transitions were observed at 75 and 60 degrees C respectively. However, the films deposited at 500 degrees C had the Austenite and Martensite transitions at 73 and 58 degrees C, respectively. Elastic modulus and hardness values increased from 93 to 145 GPa and 7.2 to 12.6 GPa, respectively, with increase in deposition rates. These results are explained on the basis of change in film composition and crystallization. (C) 2010 Published by Elsevier Ltd

(Ba3MTiMO9)-Ti-III-O-V (M-III = Fe, Ga, Y, Lu, M-V = Nb, Ta, Sb) perovskite oxides Synthesis, structure and dielectric properties

We describe the synthesis structures and dielectric properties of new perovskite oxides of the formula (Ba3MTiMO9)-Ti-III-O-V for M-III = Fe Ga Y Lu and M-V = Nb Ta Sb While M-V = Nb and Ta oxides adopt disordered/partially ordered 3C perovskite structures where M-III/Ti/M-V metal-oxygen octahedra are corner connected the M-V = Sb oxides show a distinct preference for the 6H structure where Sb-V/Ti-IV metal-oxygen octahedra share a common face forming (Sb Ti)O-9 dimers that are corner-connected to the (MO6)-O-III octahedra The preference of antimony oxides (Sb-V 4d(10)) for the 6H structure which arises from a special Sb-V-O chemical bonding that tends to avoid linear Sb-O-Sb linkages unlike Nb-V/Ta-V d(0) atoms which prefer similar to 180 degrees Nb/Ta-O-Nb/Ta linkages - is consistent with the crystal chemistry of M-V-O oxides in general The dielectric properties reveal a significant difference among Mill members All the oxides with the 3C structure excepting those with Mill = Fe show a normal low loss dielectric behaviour with epsilon = 20-60 in the temperature range 50-400 degrees C the M-III = Fe members with this structure (M-V = Nb Ta) display a relaxor-like ferroelectric behaviour with large E values at frequencies <= 1 MHz (50-500 degrees C) (C) 2010 Elsevier Masson SAS All rights reserved

Characteristics of superplasticity domain in the processing map for hot working of an Al alloy 2014---20vol.%Al2O3 metal matrix composite

The processing map for hot working of Al alloy 2014-20vol.%Al2O3 particulate-reinforced cast-plus-extruded composite material has been generated covering the temperature range 300-500 degrees C and the strain rate range 0.001-10 s(-1) based on the dynamic materials model. The efficiency eta of power dissipation given by 2m/(m + 1), where m is the strain rate sensitivity, is plotted as a function of temperature and strain rate to obtain a processing map. A domain of superplasticity has been identified, with a peak efficiency of 62% occurring at 500 degrees C and 0.001 s(-1). The characteristics of this domain have been studied with the help of microstructural evaluation and hot-ductility measurements. Microstructural instability is predicted at higher strain rates above (ls(-1)) and lower temperatures (less than 350 degrees C).

Controlled combustion synthesis and properties of fine-particle NASICON materials

Fine-particle NASICON materials, Na1+xZr2P3-xSixO12 (where x = 0.0, 0.5, 1.0, 1.5, 2.0 and 2.5), have been prepared by controlled combustion of an aqueous solution containing stoicthiometric amounts of sodium nitrate, zirconyl nitrate, ammonium perchlorate, diammonium hydrogen phosphate, fumed silica and carbonohydrazide. Formation of NASICON has been confirmed by powder XRD, Si-29 NMR and IR spectroscopy. These NASICON powders are fine (average agglomerate size 5-12 mum) with a surface area varying from 8 to 30 m2 g-1. NASICON powders pelletized and sintered at 1100-1200-degrees-C for 5 h achieved 90-95% theoretical density and show fine-grain microstructure. The coefficient of thermal expansion of sintered NASICON compact was measured up to 500-degrees-C and changes f rom -3.4 x 10(-6) to 4.1 x 10(-6) K-1. The conductivity of Sintered Na3Zr2PSi2O12 compact at 300-degrees-C is 0.236 OMEGA-1 cm-1.

Synthesis and properties of tialite, beta-AL2TIO5

Tialite, beta-Al2TiO5, a low expansion material, has been synthesised by the combustion of corresponding metal nitrates and carbohydrazide (CH) or urea redox mixtures at 500-degrees-C. As prepared powders contained tialite, rutile, and corundum in the mole ratios of 50:25:25 (CH) and 20:40:40 (urea). The combustion derived powders, when calcined 30 min at 1300-degrees-C, gave single phase beta-tialite having a surface area of 20-25 m2 g-1 and a particle size of 0.79-1.03 mum.