Reynolds number effects on scalar dissipation rate transport and its modeling in turbulent premixed combustion

The effects of turbulent Reynolds number, Ret, on the transport of scalar dissipation rate of reaction progress variable in the context of Reynolds averaged Navier-Stokes simulations have been analyzed using three-dimensional simplified chemistry-based direct numerical simulation (DNS) data of freely propagating turbulent premixed flames with different values of Ret. Scaling arguments have been used to explain the effects of Ret on the turbulent transport, scalar-turbulence interaction, and the combined reaction and molecular dissipation terms. Suitable modifications to the models for these terms have been proposed to account for Ret effects, and the model parameters include explicit Ret dependence. These expressions approach expected asymptotic limits for large values of Ret. However, turbulent Reynolds number Ret does not seem to have any major effects on the modeling of the term arising from density variation. Copyright © Taylor and Francis Group, LLC.

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility. © 2008 American Institute of Physics.

Application of scalar dissipation rate model to siemens DLE combustors

The standard design process for the Siemens Industrial Turbomachinery, Lincoln, Dry Low Emissions combustion systems has adopted the Eddy Dissipation Model with Finite Rate Chemistry for reacting computational fluid dynamics simulations. The major drawbacks of this model have been the over-prediction of temperature and lack of species data limiting the applicability of the model. A novel combustion model referred to as the Scalar Dissipation Rate Model has been developed recently based on a flamelet type assumption. Previous attempts to adopt the flamelet philosophy with alternative closure models have failed, with the prediction of unphysical phenomenon. The Scalar Dissipation Rate Model (SDRM) was developed from a physical understanding of scalar dissipation rate, signifying the rate of mixing of hot and cold fluids at scales relevant to sustain combustion, in flames and was validated using direct numerical simulations data and experimental measurements. This paper reports on the first industrial application of the SDRM to SITL DLE combustion system. Previous applications have considered ideally premixed laboratory scale flames. The industrial application differs significantly in the complexity of the geometry, unmixedness and operating pressures. The model was implemented into ANSYS-CFX using their inbuilt command language. Simulations were run transiently using Scale Adaptive Simulation turbulence model, which switches between Large Eddy Simulation and Unsteady Reynolds Averaged Navier Stokes using a blending function. The model was validated in a research SITL DLE combustion system prior to being applied to the actual industrial geometry at real operating conditions. This system consists of the SGT-100 burner with a glass square-sectioned combustor allowing for detailed diagnostics. This paper shows the successful validation of the SDRM against time averaged temperature and velocity within measurement errors. The successful validation allowed application of the SDRM to the SGT-100 twin shaft at the relevant full load conditions. Limited validation data was available due to the complexity of measurement in the real geometry. Comparison of surface temperatures and combustor exit temperature profiles showed an improvement compared to EDM/FRC model. Furthermore, no unphysical phenomena were predicted. This paper presents the successful application of the SDRM to the industrial combustion system. The model shows a marked improvement in the prediction of temperature over the EDM/FRC model previously used. This is of significant importance in the future applications of combustion CFD for understanding of hardware mechanical integrity, combustion emissions and dynamics of the flame. Copyright © 2012 by ASME.

Local strain rate and curvature dependences of scalar dissipation rate transport in turbulent premixed flames: A direct numerical simulation analysis

The statistical behaviours of the instantaneous scalar dissipation rate Nc of reaction progress variable c in turbulent premixed flames have been analysed based on three-dimensional direct numerical simulation data of freely propagating statistically planar flame and V-flame configurations with different turbulent Reynolds number Ret. The statistical behaviours of N c and different terms of its transport equation for planar and V-flames are found to be qualitatively similar. The mean contribution of the density-variation term T1 is positive, whereas the molecular dissipation term (-D2) acts as a leading order sink. The mean contribution of the strain rate term T2 is predominantly negative for the cases considered here. The mean reaction rate contribution T3 is positive (negative) towards the unburned (burned) gas side of the flame, whereas the mean contribution of the diffusivity gradient term (D) assumes negative (positive) values towards the unburned (burned) gas side. The local statistical behaviours of Nc, T1, T2, T 3, (-D2), and f(D) have been analysed in terms of their marginal probability density functions (pdfs) and their joint pdfs with local tangential strain rate aT and curvature km. Detailed physical explanations have been provided for the observed behaviour. © 2014 Y. Gao et al.

Links between energy dissipation and wear mechanisms in solid epoxy/epoxy sliding contact

This paper covers wear and energy dissipation of solid epoxy induced by the alternative rubbing between two samples of identical thermosetting polymer. Varying normal load, sliding velocity and sliding distance, the authors were able to define and discuss wear and friction laws and associated energy dissipation. Moreover, traces of several wear mechanisms were distinguished on the worn surfaces and associated with applied conditions. Observed under higher velocity, polymer softening and local state transition were explained by surface temperature estimate and confirmed by infra-red spectroscopy measurements. To conclude this study, all observed phenomena are classified into two wear scenarios according to sliding velocity. © 2014 Elsevier Ltd.

Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact

Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 x 10(-4) Omega cm(2) is obtained at annealing temperature of 550 degrees C.

Dynamics of quantum dissipation systems interacting with fermion and boson grand canonical bath ensembles: Hierarchical equations of motion approach

A hierarchical equations of motion formalism for a quantum dissipation system in a grand canonical bath ensemble surrounding is constructed on the basis of the calculus-on-path-integral algorithm, together with the parametrization of arbitrary non-Markovian bath that satisfies fluctuation-dissipation theorem. The influence functionals for both the fermion or boson bath interaction are found to be of the same path integral expression as the canonical bath, assuming they all satisfy the Gaussian statistics. However, the equation of motion formalism is different due to the fluctuation-dissipation theories that are distinct and used explicitly. The implications of the present work to quantum transport through molecular wires and electron transfer in complex molecular systems are discussed. (c) 2007 American Institute of Physics.

Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be similar to 0.2 and 200 cm(-1), respectively, for the InGaN QDs. (c) 2006 American Institute of Physics.

A 5.6-mW Power Dissipation CMOS Frequency Synthesizer for L1/L2 Dual-Band GPS Application

This paper presents a wide tuning range CMOS frequency synthesizer for dual-band GPS receiver, which has been fabricated in a standard 0.18-um RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45GHz and 3.14GHz in case of process corner or temperature variation, with a current consumption varying accordingly from 0.8mA to 0.4mA, from a 1.8V supply voltage. The measurement results show that the whole frequency synthesizer costs a very low power consumption of 5.6mW working at L I band with in-band phase noise less than -82dBc/Hz and out-of-band phase noise about -112 dBc/Hz at 1MHz offset from a 3.142GHz carrier.

Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation

A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100 similar to 200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current voltage (I-V) curves revealed the contact properties. After annealing in N-2 at 700 degrees C, good linear property was shown with contact resistance of 33 Omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.

INDIUM OHMIC CONTACTS TO N-ZNSE

The reaction between an indium over layer and high purity MBE grown n-ZnSe chlorine doped (2x 10(18) cm-3) epilayers has been investigated using X-ray diffraction, Rutherford backscattering spectroscopy, X-ray photoelectron and Auger electron spectroscopy, and by electrical function tests (I-V and C-V). Good ohmic contacts were formed after annealing at 250 or 300-degrees-C for a few minutes in forming gas. Annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. The data show that no compounds were formed at the interface; instead In appeared to diffuse into the ZnSe. High surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in the formation of the contact. These effects must be considered for successful formation of the ohmic contact.

Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealing

A low resistance and shallow ohmic contact to n-GaAs is performed by using Ge/Pd/GaAs trilayer structure and rapid thermal annealing process. The dependence of specific contact resistivity on the temperature of rapid thermal annealing is investigated. A good ohmic contact is formed after annealing at 400-500 degrees C for 60 s. The best specific contact resistivity is 1.4 x 10(-6) Omega cm(2). Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM) are used to analyze the interfacial microstructure. A strong correlation between the contact resistance and the film microstructure is observed.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.