940 resultados para Niobium carbide


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A new series of austenitic stainless steels-Nb stabilized, without Mo additions, non-susceptible to delta ferrite formation and devoid of intemetallic phases (sigma and chi), without deformation induced martensite is being developed, aiming at high temperature applications as well as for corrosive environments. The base steel composition is a 15Cr-15Ni with normal additions of Nb of 0.5, 1.0 and 2 wt%. Mechanical properties, oxidation and corrosion resistance already have been invetigated in previous papers. In this paper, the effects of Nb on the SFE, strain hardening and recrystallization resistance are evaluated with the help of Adaptive Neural Networks (ANN).

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The studies of niobium after electrochemical polishing EP in sulfuric-methanesulfonic acid mixture were performed. The NbOx/Nb surface was studied by SEM/EDX and XPS methods to find out the chemical composition of the oxygen-induced structures. Specifically the XPS results obtained after EP treatment indicate prevailing part of oxygen with niobium oxides on the sample surface. In order to correctly interpret these structures the photoelectron spectra of main niobium oxides were analyzed, and the spectra of internal Nb 3d and O 1s electronic states and valence band spectra were measured for them. (C) 2012 Elsevier B. V. All rights reserved.

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The effects of cryogenic and stress relief treatments on temper carbide precipitation in the cold work tool steel AISI D2 were studied. For the cryogenic treatment the temperature was −196°C and the holding time was 2, 24 or 30 h. The stress relief heat treatment was carried at 130°C/90 min, when applied. All specimens were compared to a standard thermal cycle. Specimens were studied using metallographic characterisation, X-ray diffraction and thermoelectric power measurements. The metallographic characterisation used SEM (scanning electron microscopy) and SEM-FEG (SEM with field emission gun), besides OM (optical microscopy). No variation in the secondary carbides (micrometre sized) precipitation was found. The temper secondary carbides (nanosized) were found to be more finely dispersed in the matrix of the specimens with cryogenic treatment and without stress relief. The refinement of the temper secondary carbides was attributed to a possible in situ carbide precipitation during tempering.

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During the last decade advances in the field of sensor design and improved base materials have pushed the radiation hardness of the current silicon detector technology to impressive performance. It should allow operation of the tracking systems of the Large Hadron Collider (LHC) experiments at nominal luminosity (1034 cm-2s-1) for about 10 years. The current silicon detectors are unable to cope with such an environment. Silicon carbide (SiC), which has recently been recognized as potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were irradiated with 1 MeV neutrons up to fluence of 1016 cm-2. It is well known that the degradation of the detectors with irradiation, independently of the structure used for their realization, is caused by lattice defects, like creation of point-like defect, dopant deactivation and dead layer formation and that a crucial aspect for the understanding of the defect kinetics at a microscopic level is the correct identification of the crystal defects in terms of their electrical activity. In order to clarify the defect kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different samples irradiated at increasing fluences. The defect evolution was correlated with the transport properties of the irradiated detector, always comparing with the un-irradiated one. The charge collection efficiency degradation of Schottky detectors induced by neutron irradiation was related to the increasing concentration of defects as function of the neutron fluence.

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This thesis analyzes theoretically and computationally the phenomenon of partial ionization of the substitutional dopants in Silicon Carbide at thermal equilibrium. It is based on the solution of the charge neutrality equation and takes into account the following phenomena: several energy levels in the bandgap; Fermi-Dirac statistics for free carriers; screening effects on the dopant ionization energies; the formation of impurity bands. A self-consistent model and a corresponding simulation software have been realized. A preliminary comparison of our calculations with existing experimental results is carried out.

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Basement lavas from Sites 756, 757, and 758 on Ninetyeast Ridge are tholeiitic basalts. Lavas from Sites 756 and 757 appear to be subaerial eruptives, but the lowermost flows from Hole 758A are pillow lavas. In contrast to the compositional variation during the waning stages of Hawaiian volcanism, no alkalic lavas have been recovered from Ninetyeast Ridge and highly evolved lavas were recovered from only one of seven drill sites (DSDP Site 214). All lavas from Site 758 have relatively high MgO contents (8-10 wt%), and they are less evolved than lavas from Sites 756 and 757. Although abundances of alkali metals in these Ninetyeast Ridge basalts were significantly modified by postmagmatic alteration, abundances of other elements reflect magmatic processes. At Site 757 most of the lavas are Plagioclase cumulates, but lava compositions require two compositionally distinct, AhCb-rich parental magmas, perhaps segregated at relatively low mantle pressures. In addition, at both Sites 756 and 758 more than one compositionally distinct parental magma is required. The compositions of these Ninetyeast Ridge lavas, especially those from Site 758, require a source component with a depleted composition; specifically, the abundance ratios Th/Ta, Th/La, Ba/Nb, Ba/La, and La/Ce in these lavas are generally less than the ratios inferred for primitive mantle. Lavas from Ninetyeast Ridge and the Kerguelen Archipelago have very different chondrite-normalized REE patterns, with lower light REE/heavy REE (LREE/HREE) ratios in lavas from Ninetyeast Ridge. However, lavas from Sites 757 and 758 have Pb isotope ratios that overlap with the field defined by lavas from the Kerguelen Archipelago (Weis and Frey, this volume). Therefore, these Ninetyeast Ridge lavas contain more of a component that is relatively depleted in LREE and other highly incompatible elements, but have similar amounts of the component that controls radiogenic Pb isotopes. A model involving mixing between components related to a depleted source and an enriched plume source has been proposed for the oldest Kerguelen Archipelago basalts and Ninetyeast Ridge lavas. Although the incompatible element characteristics of the Ninetyeast Ridge lavas are intermediate between depleted MORB and Kerguelen Archipelago basalts, these data are not consistent with a simple two-component mixing process. A more complex model is required.

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Eocene-Oligocene volcanic rocks drilled at Site 786 in the Izu-Bonin forearc cover a wide range of compositions from primitive boninites to highly evolved rhyolites. K-Ar dating reveals at least two distinct episodes of magmatism; one at 41 Ma and a later one at 35 Ma. The early episode produced low-Ca boninites and bronzite andesites that form an oceanic basement of pillow lavas and composite intrusive sheets, overlain by flows and intrusive sheets of intermediate-Ca boninites and bronzite-andesites and a fractionated series of andesites, dacites, and rhyolites. The later episode produced high-Ca boninites and intermediate-Ca boninites, exclusively as intrusive sheets.

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Statistical analysis of X-ray fluorescence data acquired during Leg 135 indicates that this instrument produces data of comparable precision to good land-based laboratories. We also examined contamination of certain elements caused by crushing during the use of the tungsten carbide apparatus. Although the concentrations of most elements are not altered during crushing, the powders prepared on the ship should not be used in subsequent studies where key elements of the investigation include W, Co, Ta, Pb, and low levels of Nb.

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The present thesis has been devoted to the synthesis and investigation of functional properties of silicon carbide thin films and nanowires. The work took profit from the experience of the research group in the synthesis of 3C-SiC from vapour phase. 3C-SiC thin films Thin films heteroepitaxy on silicon substrates was carried out in a vapour phase epitaxy reactor. The initial efforts were committed to the process development in order to enhance the crystal quality of the epi-layer. The carbonization process and a buffer layer procedure were optimized in order to obtain good quality monocrystalline 3C-SiC layers. The films characterization was used not only to improve the entire process, but also to assess the crystalline quality and to identify the defects. Methyltrichlorosilane (MTS) was introduced during the synthesis to increase the growth rate and enhance crystalline quality. The effect of synthesis parameters such as MTS flow and process temperature was studied in order to promote defect density reduction and the release of the strain due to lattice mismatch between 3C-SiC and silicon substrate. In-growth n-type doping was implemented using a nitrogen gas line and the effect of different synthesis parameters on doping level was studied. Raman measurements allowed a contactless characterization and evaluation of electrically active dopant. The effect of MTS on nitrogen incorporation was investigated and a promotion of dopant concentration together with a higher growth rate were demonstrated. This result allows to obtain higher doping concentrations without deteriorating crystal quality in 3C-SiC and, to the best of our knowledge, it has never been demonstrated before. 3C-SiC nanowires Core-shell SiC-SiO2 nanowires were synthesized using a chemical vapour deposition technique in an open tube configuration reactor on silicon substrates. Metal catalyst were used to promote a uniaxial growth and a dense bundle of nanowires 100 µm long and 60 nm thick was obtained. Substrate preparation was found to be fundamental in order to obtain a uniform nanowire density. Morphological characterization was carried out using scanning electron microscopy and the analysis of structural, compositional, optical properties is reported.

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A novel polymer/TiC nanocomposites “PPA/TiC, poly(PA-co-ANI)/TiC and PANI/TiC” was successfully synthesized by chemical oxidation polymerization at room temperature using p-anisidine and/or aniline monomers and titanium carbide (TiC) in the presence of hydrochloric acid as a dopant with ammonium persulfate as oxidant. These nanocomposites obtained were characterized by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and thermogravimetric analysis (TGA). XRD indicated the presence of interactions between polymers and TiC nanoparticle and the TGA revealed that the TiC nanoparticles improve the thermal stability of the polymers. The electrical conductivity of nanocomposites is in the range of 0.079–0.91 S cm−1. The electrochemical behavior of the polymers extracted from the nanocomposites has been analyzed by cyclic voltammetry. Good electrochemical response has been observed for polymer films; the observed redox processes indicate that the polymerisation on TiC nanoparticles produces electroactive polymers. These nanocomposite microspheres can potentially used in commercial applications as fillers for antistatic and anticorrosion coatings.