968 resultados para N×N mechanical optical switch


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In this paper, the evolution of the gradient force pattern, focal shift, and focal switch induced by a three-portion pure phase-shifting apodizer is numerically investigated in detail. The results show that the proposed apodizer may induce tunable gradient force on the particles in the focal region, focal shift, and focal switch. By adjusting the geometrical parameters of the phase-shifting apodizer, multiple traps may occur with changeable distance between them, and the shape of the optical trap also evolves evidently. More interestingly, for certain geometrical parameters of the proposed apodizer, by changing the phase shift of inner annular portion, the considerable focal shift may occur with focal switch accompanying, which is discussed to show that this kind of apodizer may be a very promising method of transporting trapped particles. © 2005 Elsevier GmbH. All rights reserved.

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We propose a novel semiconductor optical amplifier (SOA) based switch architecture for analog applications. Proof-of-principle experiments show that the system is very linear with an SFDR of approximately 100dB·Hz 2/3 for a switching time of 50μs. The port number of this switch is scalable and can be expanded to 80 × 80.

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A Mode Selective Switch based around an LCoS Spatial Light Modulator is demonstrated to optically demultiplex modes with the same propagation constants to the same output fibres, using a common phase mask for all channels. © 2012 IEEE.

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We propose a low latency optical data center top of rack switch using recirculation buffering and a hybrid MZ/SOA switch architecture to reduce the network power dissipated on future optically connected server chips by 53%. © OSA 2014.

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A folding nonblocking 4 X 4 optical matrix switch in simplified-tree architecture was designed and fabricated on a silicon-on-insulator wafer. To compress chip size, switch elements (SEs) were connected by total internal reflection mirrors instead of conventional S-bends. For obtaining smooth interfaces, potassium hydroxide (KOH) anisotropic chemical etching of silicon was employed. The device has a compact size of 20 X 3.2 mm(2) and a fast response of 8 +/- 1 mu s. Power consumption of 2 x 2 SE and excess loss per mirror were 145 mW and -1.1 dB, respectively. (c) 2005 Society of Photo-Optical Instrumentation Engineers.