谷子体细胞无性系变异和抗除草剂基因转化研究

谷子是我国北方具有区域重要性的禾谷类粮食作物。谷子的体细胞无性系变异和外源基因转化相对其它作物研究较少。本研究利用谷子生产的育种中应用的多个优良品种为材料，分析了谷子体细无性系变异发生的影响因素、变异性和频率、DNA分子水平变异和育种应用等问题;采用基因枪法和花粉管通道法，进行了谷子抗除草剂基因转化研究。 主要结果包括： 1. 通过几种外植体的愈伤组织诱导分析,找到了小花分化期前后的谷子幼穗是愈伤组织诱导的最好外植体.提出谷子愈伤组织可按生长状态和结构划分为质密型、松软型和松散型三种基本类型的观点。前两种为胚性愈伤组织并可相互转换，松软型愈伤组织生长状态稳定，可塑性好，是继代培养和因基化的首选类型。供试品种中豫谷1号、高39、郑407和矮宁黄为易培养品种，矮88、豫谷2号、系238、冀14号、C445和青丰谷为相对难培养品种。这些结果为谷子组织培养和生物技术操作提供了基础资料。 2. 首次对多个谷子品种较大群体的无性系变异进行了分析。结果表明，以R_2株系为单位的谷子体细胞无性系表现型变异频率平均为13.0%，不同基因型的变幅为4.3～32.9%;变异涉及株高、抽穗期、穗粒重、出谷率、叶鞘色、育性、抗病性、米色、穗型等多个性状，多数变异为株高和抽穗期等数量性状，少数为矮秆等质量性状：变异的性状多数能在R_3稳定并遗传给后代。从谷子体细胞无性系变异中选出了一批农艺性状得到改良的新品系，其中系103已进入省区域试验，并提供给多家育种单位作为亲本应用。 3. 将RAPD分析技术引入谷子体细胞无性系变异研究。豫谷2号无性系的RAPD多态性变化既有亲本带的缺失，也有新带的产生。用RAPD多态性变化的SMC值度量无性系同亲本相比DNA水平变异的大小，表现型发生变异的无性系,其SMC值分别为0.905～1.0;表现型未发生变异的无性系，RAPD多态性也可能发生变化，其SMC值分布为0.953～1.0。 4. 通过Gus基因瞬时表达单位数的比较，优化了JQ－700基因枪转化谷子松型愈伤组织的操作参数：质粒DNA用量3μg/mg钨粉，CaCl_2农度1.5M，亚精胺浓度40mM，样品室高度7cm，粗弹头为微弹载体，每皿愈伤组织用量1～2g，每次轰击钨粉用量50μg，轰击前4小时和轰击后16～20小时，用含蔗糖150g/l的高渗培养基处理。利用该技术体系，以bar基因为目的基因转化豫谷2号愈伤组织。经选择培养和植株再生，首次获得了抗0.1% bialaphos的正常可育植株，经PCR和Southern blot分析，bar基因已整合到转化体的基因组中，为创造抗除草剂的谷子新种质提供了材料和技术基础。 5. 研究了花粉管通道法转化和花粉介导的基因枪转化谷子的可行性。花粉管通道法转化后代中，获得了抗0.1% bialaphos的抗性植株，经X-gluc组织化学检测，抗性植株叶片的Gus反应为阳性。初步说明该植株可能为转化体，在谷子上为花粉管通道法转化的可行性提供了佐证。花粉介导的基因枪转化未获得转化体。 本文对体细胞无性系变异形成的原因和应用、无性系变异的分子生物学分析、以及谷子的外源基因转化方法等问题进行了讨论。

高赖氨酸蛋白基因的克隆及其转基因水稻植株的获得

水稻、玉米、小麦和大麦等许多主要禾本科作物的第一限制性氨基酸是赖氨酸。本文将一个来源于四棱豆的高赖氨酸蛋白基因导入水稻，以研究通过转基因改善蛋白质的可能，获得有经济价值和社会意义的转基因作物。 构建了含有高赖氨酸蛋白基因（Lys）、gus基因及植物选择标记潮霉素磷酸转移酶基因（hpt）的植物表达载体pBRLys;在pBRLys中，该高赖氨酸蛋白基因由目前已知最强的单子叶植物启动子玉米Ubiquitin 1启动子调控。用基因枪轰击法将pBRLys导入水稻幼胚或幼胚诱导的愈伤组织。共得到36株潮霉素抗性再生植株，经分子检测有22株为转基因植株。 实验中对影响水稻转化、再生和移栽一些条件进行了研究。从潮霉素筛选浓度、愈伤组织干燥处理、光照对分化的影响、多效唑的影响和移栽环境等做了一些简化和改善。 PCR检测、PCR-Southern杂交和Southern杂交表明潮霉素基因和Lys基因已经整合到转基因水稻的基因组中，外源基因在转基因水稻基因组中以1个拷贝以上的形式存在。同时，GUS组织化学染色表明转基因水稻植株的叶、茎和根中都有gus基因的表达。 初步对5株转基因植株进行赖氨酸含量测定，结果表明：与非转化对照相比，有两棵植株赖氨酸含量提高，分别增加6.0%和12.4%。对更多抗性转化植株的分子检测、GUS分析和赖氨酸含量测定正在进行之中。

Effect of deposition conditions on the chemical bonding in sputtered carbon nitride films

A balanced planar r.f. powered magnetron sputter source has been used to deposit carbon nitride films from a graphite target under various conditions. Sample temperature, bias voltage and nitrogen content in the gas mixture were varied. The effects of oxygen, methane and ammonia on the film growth were also studied. Special attention was paid to the effects of the deposition parameters on the structure of the films, in particular the hybridisation of the carbon and nitrogen bonding. The chemical bonding of the carbon and nitrogen atoms was studied by electron energy loss spectroscopy (EELS). The chemical composition was evaluated by Rutherford back-scattering. The intensity of transitions to π antibonding orbitals, as revealed by EELS, was found to increase with the nitrogen content in the films. Ion bombardment of the films during growth and the addition of oxygen or hydrogen-rich gases further increased the proportion of π bonds of both the carbon and nitrogen atoms. It is suggested that the increase in the transitions to μ antibond orbitals is to be explained by increased sp2 or possibly sp hybridisation of the carbon and nitrogen. Also, the effect of annealing on the bonding of nitrogen rich films after deposition was tested. The changes caused by nitrogen and deposition conditions are consistent with previous reports on the formation of paracyanogen structures.

Deposition of diamond-like carbon films by photon-enhanced chemical vapour deposition of methane using a windowless hydrogen lamp

Thin films of diamond-like carbon (DLC) have been deposited using a novel photon-enhanced chemical vapour deposition (photo-CVD) method. This low energy method may be a way to produce better interfaces in electronic devices by reducing damage due to ion bombardment. Methane requires high energy photons for photolysis to take place and these are not transmitted in most photo-CVD methods owing to the presence of a window between the lamp and the deposition environment. In our photo-CVD system there is no window and all the high energy photons are transmitted into the reaction gas. Initial work has proved promising and this paper presents recent results. Films have been characterized by measuring electron energy loss spectra, by ellipsometry and by fabricating and testing diode structures. Results indicate that the films are of a largely amorphous nature and are semiconducting. Diode structures have on/off current ratios of up to 106.

Plasma enhancement of current from carbon cathodes for field emission displays

This paper examines the possibility of using a background gas medium to enhance the current available from low threshold carbon cathodes. The field emission current is used to initiate a plasma in the gas medium, and thereby achieve a current multiplication effect. Results on the variation of anode current as a function of electric field and gas pressure are presented. These are compared with model calculations to verify the principles of operation. The influence of ion bombardment on the long term performance thin film carbon cathodes is examined for He and Ar multiplication plasmas. A measure of the influence of current multiplication on display quality is presented by examining light output from two standard low voltage phosphors. Also studied are the influence of doping the carbon with N to lower the threshold voltage for emission as well as the consequent impact on anode current from the plasma.

Room-temperature remote-plasma sputtering of c-axis oriented zinc oxide thin films

Highly c-axis oriented ZnO films have been deposited at room temperature with high rates (∼50 nm·min -1) using an innovative remote plasma sputtering configuration, which allows independent control of the plasma density and the sputtering ion energy. The ZnO films deposited possess excellent crystallographic orientation, high resistivity (>10 9 Ω·m), and exhibit very low surface roughness. The ability to increase the sputtering ion energy without causing unwanted Ar + bombardment onto the substrate has been shown to be crucial for the growth of films with excellent c-axis orientation without the need of substrate heating. In addition, the elimination of the Ar + bombardment has facilitated the growth of films with very low defect density and hence very low intrinsic stress (100 MPa for 3 μm-thick films). This is over an order of magnitude lower than films grown with a standard magnetron sputtering system. © 2012 American Institute of Physics.

High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films

Hafnium oxide (HfOx) is a high dielectric constant (k) oxide which has been identified as being suitable for use as the gate dielectric in thin film transistors (TFTs). Amorphous materials are preferred for a gate dielectric, but it has been an ongoing challenge to produce amorphous HfOx while maintaining a high dielectric constant. A technique called high target utilization sputtering (HiTUS) is demonstrated to be capable of depositing high-k amorphous HfOx thin films at room temperature. The plasma is generated in a remote chamber, allowing higher rate deposition of films with minimal ion damage. Compared to a conventional sputtering system, the HiTUS technique allows finer control of the thin film microstructure. Using a conventional reactive rf magnetron sputtering technique, monoclinic nanocrystalline HfOx thin films have been deposited at a rate of ∼1.6nmmin-1 at room temperature, with a resistivity of 1013Ωcm, a breakdown strength of 3.5MVcm-1 and a dielectric constant of ∼18.2. By comparison, using the HiTUS process, amorphous HfOx (x=2.1) thin films which appear to have a cubic-like short-range order have been deposited at a high deposition rate of ∼25nmmin-1 with a high resistivity of 1014Ωcm, a breakdown strength of 3MVcm-1 and a high dielectric constant of ∼30. Two key conditions must be satisfied in the HiTUS system for high-k HfOx to be produced. Firstly, the correct oxygen flow rate is required for a given sputtering rate from the metallic target. Secondly, there must be an absence of energetic oxygen ion bombardment to maintain an amorphous microstructure and a high flux of medium energy species emitted from the metallic sputtering target to induce a cubic-like short range order. This HfOx is very attractive as a dielectric material for large-area electronic applications on flexible substrates. A remote plasma sputtering process (high target utilization sputtering, HiTUS) has been used to deposit amorphous hafnium oxide with a very high dielectric constant (∼30). X-ray diffraction shows that this material has a microstructure in which the atoms have a cubic-like short-range order, whereas radio frequency (rf) magnetron sputtering produced a monoclinic polycrystalline microstructure. This is correlated to the difference in the energetics of remote plasma and rf magnetron sputtering processes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CYCLIC PEPTIDE HEPATOTOXINS FROM FRESH-WATER CYANOBACTERIAL (BLUE-GREEN-ALGAE) WATERBLOOMS COLLECTED IN CENTRAL CHINA

Toxic cyanobacteria (blue-green algae) waterblooms have been found in several Chinese water bodies since studies began there in 1984. Waterbloom samples for this study contained Anabaena circinalis, Microcystis aeruginosa and Oscillatoria sp. Only those waterblooms dominated by Microcystis aeruginosa were toxic by the intraperitoneal (i.p.) mouse bioassay. Signs of poisoning were the same as with known hepatotoxic cyclic peptide microcystins. One toxic fraction was isolated from each Microcystis aeruginosa sample. Two hepatotoxic peptides were purified from each of the fractions by high-performance liquid chromatography and identified by amino acid analysis followed by low and high resolution fast-atom bombardment mass spectrometry (FAB-MS). LD50 i.p. mouse values for the two toxins were 245-mu-g/kg (Toxin A) and 53-mu-g/g (Toxin B). Toxin content in the cells was 0.03 to 3.95 mg/g (Toxin A) and 0.18 to 3.33 mg/kg (Toxin B). The amino acid composition of Toxin A was alanine [1], arginine [2], glutamic acid [1] and beta-methylaspartic acid [1]; for Toxin B it was the same, except one of the arginines was replaced with a leucine. Low- and high-resolution FAB-MS showed that the molecular weights were 1,037 m/z (Toxin A) and 994 m/z (Toxin B), with formulas of C49H76O12N13 (Toxin A) and C49H75O12N10 (Toxin B). It was concluded that Toxin A is microcystin-RR and Toxin B is microcystin-LR, both known cyclic heptapeptide hepatotoxins isolated from cyanobacteria in other parts of the world. Sodium borohydride reduction of microcystin-RR yielded dihydro-microcystin-RR (m/z = 1,039), an important intermediate in the preparation of tritium-labeled toxin for metabolism and fate studies.

Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)

Cubic boron nitride (c-BN) films were deposited on Si(001) substrates in an ion beam assisted deposition (IBAD) system under various conditions, and the growth parameter spaces and optical properties of c-BN films have been investigated systematically. The results indicate that suitable ion bombardment is necessary for the growth of c-BN films, and a well defined parameter space can be established by using the P/a-parameter. The refractive index of BN films keeps a constant of 1.8 for the c-BN content lower than 50%, while for c-BN films with higher cubic phase the refractive index increases with the c-BN content from 1.8 at chi(c) = 50% to 2.1 at chi(c) = 90%. Furthermore, the relationship between n and rho for BN films can be described by the Anderson-Schreiber equation, and the overlap field parameter gamma is determined to be 2.05.

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.

The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering

The microstructures of hydrogenated microcrystalline silicon (tic-Si: H) thin films, prepared by plasma-enhanced chemical vapor deposition (PECVD), hot wire CVD(HWCVD) and plasma assisted HWCVD (PE-HWCVD), have been analyzed by the small angle x-ray scattering(SAXS) measurement. The SAXS data show that the microstructures of the μ c-Si: H films display different characteristics for different deposition techniques. For films deposited by PECVD, the volume fraction of micro-voids and mean size are smaller than those in HWCVD sample. Aided by suitable ion-bombardment, PE-HWCVD samples show a more compact structure than the HWCVD sample. The microstructure parameters of the μ c-Si: H thin films deposited by two-steps HWCVD and PE-HWCVD with Ar ions are evidently improved. The result of 45° tilting SAXS measurement indicates that the distribution of micro-voids in the film is anisotropic. The Fouriertransform infrared spectra confirm the SAXS data.

Evidence of ultrafast energy exchange-induced soft'mode of phonons and lattice instability: a nanotime effect

With a series of supportive experimental phenomena as induced by ion beam bombardment, energetic beaminduced athermal activation process in Si is demonstrated. This is correlated with phenomena induced by ultrafast energy exchange in condensed matter in general. A critical modelling is presented on the above process and a universal concept: the ultrafast energy exchange-induced soft mode of phonons and the lattice instability in condensed matter are proposed.

Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si

Nanocrystalline diamond films were grown by a two-step process on Si(1 0 0) substrate, which was first pretreated by pure carbon ions bombardment. The bombarded Si substrate was then transformed into a hot-filament chemical vapor deposition (HFCVD) system for further growth. Using the usual CH4/H-3 feed gas ratio for micro crystalline diamond growth, nanodiamond crystallites were obtained. The diamond nucleation density is comparable to that obtained by biasing the substrate. The uniformly distributed lattice damage is proposed to be responsible for the formation of the nanodiamond. (C) 2002 Elsevier Science B.V. All rights reserved.

Impurity-free vacancy diffusion technique for InGaAsP/InP multiple quantum well laser structure

Bandgap tuning of the InGaAsP/InP multiple quant um well (MQW) laser structure by the impurity-free vacancy diffusion (IFVD) is investigated using photoluminescence. It has been demonstrated that the effects of the plasma bombardment to the:sample surface involved in the IFVD technique can enhance the intermixing of the InGaAsP/InP MQW laser structure. The reliability of the IFVD technique, particularly the effects of the surface decomposition and the intrinsic defects formed in the growth or preparation of the wafer, has been discussed.

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grown by molecular-beam epitaxy using a dc plasma as the N source. It was found that RTA at low temperature (LT, 650 degrees C) and high temperature (HT, 900 degrees C) could both improve the QW quality significantly. To clarify the mechanism of quality improvement by RTA, a magnetic field perpendicular to the path of the N plasma flux was applied during the growth of the GaInNAs layers for the sake of comparison. It was found that LT-RTA mainly removed dislocations at interfaces related to the ion bombardment, whereas, HT-RTA further removed dislocations originating from the growth. LT-RTA caused only a slight blueshift of photoluminescence peak wavelength, probably due to defect-assisted interdiffusion of In-Ga at the QW interfaces. The blueshift caused by HT-RTA, on the other hand, was much larger. It is suggested that this is due to the fast defect-assisted diffusion of N-As at the QW interfaces. As defects are removed by annealing, the diffusion of In-Ga at interfaces would be predominant. (C) 2000 American Institute of Physics. [S0003- 6951(00)01535-7].