Implementação de processador banda base ofdma para downlink lte em fpga

This work treats of an implementation OFDMA baseband processor in hardware for LTE Downlink. The LTE or Long Term Evolution consist the last stage of development of the technology called 3G (Mobile System Third Generation) which offers an increasing in data rate and more efficiency and flexibility in transmission with application of advanced antennas and multiple carriers techniques. This technology applies in your physical layer the OFDMA technical (Orthogonal Frequency Division Multiple Access) for generation of signals and mapping of physical resources in downlink and has as base theoretical to OFDM multiple carriers technique (Orthogonal Frequency Division Multiplexing). With recent completion of LTE specifications, different hardware solutions have been developed, mainly, to the level symbol processing where the implementation of OFDMA processor in base band is commonly considered, because it is also considered a basic architecture of others important applications. For implementation of processor, the reconfigurable hardware offered by devices as FPGA are considered which shares not only to meet the high requirements of flexibility and adaptability of LTE as well as offers possibility of an implementation quick and efficient. The implementation of processor in reconfigurable hardware meets the specifications of LTE physical layer as well as have the flexibility necessary for to meet others standards and application which use OFDMA processor as basic architecture for your systems. The results obtained through of simulation and verification functional system approval the functionality and flexibility of processor implemented

Theoretical study of the structure and stability of NbxOy, and NbxOy+ (x = 1-3; y = 2-5, 7, 8) clusters

Geometric, thermodynamic and electronic properties of cluster neutrals NbxOy and cations NbxOy+ (x = 1-3; y = 2-5, 7, 8) have been characterized theoretically. A DFT calculation using a hybrid combination of B3LYP with contracted Huzinaga basis sets. Numerical results of the relative stabilities, ionization potentials and band gaps of different clusters are in agreement with experiment. Analysis of dissociation channels supports the more stable building blocks as formed by NbO2, NbO2+ NbO3 and NbO3+ stoichiometries. The net atomic charges suggest that oxygen donor molecules can interact more favorably on central niobium atoms of cluster cations, while the interaction with oxygen acceptor molecules is more favorable on the terminal oxygen atoms of neutral clusters. A topological analysis of the electron localization function gradient field indicates that the clusters may be described as having a strong ionic interaction between Nb and O atoms. Published by Elsevier B.V. B.V.

CYTOGENETIC STUDIES ON THE SUBFAMILY HYPOPTOPOMATINAE (PISCES, SILURIFORMES, LORICARIIDAE) .3. ANALYSIS OF 7 SPECIES

Cytogenetic studies carried out on nine species belonging to five genera of the subfamily Hypoptopomatinae showed that this group has a relatively constant diploid number, 2n = 54, with only one species having 2n = 72 chromosomes. Nevertheless, the karyotypic formulae, NOR position and C-band pattern are very different among species and sometimes among local populations, with species having undifferentiated sex chromosomes and species having the XX/XY or the ZZ/ZW mechanisms. The population structure of species belonging to the subfamily Hypoptopomatinae suggests that many chromosome rearrangements have been fixed in the different species and populations due to their geographic isolation and these karyotypic differences may be very important today for species definition.

Tm and Tm-Tb-doped germanate glasses for S-band amplifiers

The mechanism involved in the Tm(3+)((3)F(4)) -> Tb(3+)((7)F(0,1,2)) energy transfer as a function of the Tb concentration was investigated in Tm:Tb-doped germanate (GLKZ) glass. The experimental transfer rate was determined from the best fit of the (3)F(4) luminescence decay due to the Tm -> Tb energy transfer using the Burshtein model. The result showed that the 1700 nm emission from (3)F(4) can be completely quenched by 0.8 mol% of Tb(3+). As a consequence, the (7)F(3) state of Tb(3+) interacts with the (3)H(4) upper excited state of TM(3+) slighting decreasing its population. The effective amplification coefficient beta(cm(-1)) that depends on the population density difference Delta n = n((3)H(4))-n((3)F(4)) involved in the optical transition of Tm(3+) (S-band) was calculated by solving the rate equations of the system for continuous pumping with laser at 792 nm, using the Runge-Kutta numerical method including terms of fourth order. The population density inversion An as a function of Tb(3+) concentration was calculated by computational simulation for three pumping intensities, 0.2, 2.2 and 4.4 kWcm(-2). These calculations were performed using the experimental Tm -> Tb transfer rates and the optical constants of the Tm (0.1 mol%) system. It was demonstrated that 0.2 mol% of Tb(3+) propitiates best population density inversion of Tin(3+) maximizing the amplification coefficient of Tm-doped (0.1 mol%) GLKZ glass when operating as laser intensity amplification at 1.47 mu m. (C) 2007 Elsevier B.V. All rights reserved.

Simulação e avaliação das tecnologias LTE e DSL como backhaul utilizando software OPNET

A crescente demanda por capacidade vem levando os padrões de comunicação sem-fio a prover suporte para a coexistência de macro e pico células. O backhaul, conexão entre a rede de acesso e o núcleo da rede, é de grande interesse neste contexto devido aos diversos desafios técnicos e financeiros envolvidos ao tentar satisfazer o crescente tráfego dos usuários. Fibra óptica e micro-ondas com linha de visada são as opções mais amplamente adotadas para o backhaul de macro-células. Contudo, em muitas situações de interesse prático, estas não são factíveis devido aos altos custos e logística envolvidos. Este trabalho avalia o backhaul de pico-células, focando primeiramente na utilização de cobre como backhaul. O simulador OPNET foi utilizado para avaliar os requerimentos de backhaul para redes móveis em cenários específicos considerando garantir qualidade de serviço para os diversos tipos de tráfego envolvidos. Assumindo demandas de tráfego para LTE e LTE-Advanced, as tecnologias VDSL2 e G.fast são avaliadas e os resultados mostram que mesmo com uma grande demanda de aplicações de vídeo de alta definição, estas tecnologias podem acomodar o tráfego no backhaul de pico-células. VDSL2 é capaz de prover as taxas requeridas para cenários de pico-células LTE, mas não é capaz de acomodar tráfego LTE-Advanced típico. Por outro lado, considerando as taxas atingidas com a tecnologia G.fast, o tráfego backhaul para pico-células LTE-Advanced pode ainda ser entregue com garantias de qualidade de serviço. Neste trabalho também é proposta uma solução para simulação de cenários contendo redes de acesso heterogêneas considerando backhaul LTE sem linha de visada. São demonstrados também os resultados de simulações no OPNET com o backhaul LTE proposto para validar a solução proposta como capaz de caracterizar o tráfego de ambas as tecnologias WiFi e LTE na rede de acesso de acordo com o tipo de serviço.

Estudo da interferência entre sistemas LTE e de TV digital em canal adjacente na faixa dos 700 MHz

Este trabalho tem como objetivo analisar o impacto da interferência mútua entre os sistemas de Televisão Digital (DTV) e Long Term Evolution (LTE) em canal adjacente na faixa dos 700 MHz. Durante a análise, são determinadas mínimas distâncias de separação e bandas de guarda adequadas para garantir a coexistência dos sistemas nesta faixa de frequências. O impacto da interferência é avaliado em um cenário onde a Televisão digital e o LTE operam nos canais 51 e 52 respetivamente. Para obtenção dos resultados, este trabalho foi feito através de simulações de Monte Carlo. Quatro classes de Televisão Digital foram consideradas durante as simulações: classe Especial, classe A, classe B e classe C. Os resultados mostram que, as classes Especial, A e B causam interferência no LTE e que o impacto desta interferência depende da banda de guarda e também da distância de separação entre os dois sistemas. Além disso, os resultados mostram também que o aumento da largura de banda do sistema LTE só tem maior impacto se o LTE for o sistema interferido. Entretanto, os resultados mostraram que é possível a coexistência dos sistemas LTE e TVD nesta faixa desde que distâncias de isolamento e bandas de guarda adequadas sejam respeitadas.

Nature-Inspired Framework for Hyperspectral Band Selection

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Inorganic Graphenylene: A Porous Two-Dimensional Material With Tunable Band Gap

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Cumulative long-term safety, efficacy and patient-reported outcomes in children with juvenile idiopathic arthritis treated with intravenous abatacept: up to 7 years of treatment

The long-term efficacy and safety of intravenous abatacept in patients (pts) with juvenile idiopathic arthritis (JIA) have been reported previously from the Phase III AWAKEN trial ([1, 2]). Here, we report efficacy, safety and pt-reported outcomes from the open-label, long-term extension (LTE) of AWAKEN, with up to 7 years of follow-up. Pts entered the LTE if they were JIA ACR 30 non-responders (NR) at the end of the 4-month lead-in period (abatacept only), or if they received abatacept or placebo (pbo) in the 6-month double-blind (DB) period. The Child Health Questionnaire was used to evaluate health-related quality of life (HRQoL); physical (PhS) and psychosocial (PsS) summary and pain scores were analyzed. Pain was assessed by parent global assessment using a 100 mm visual analog scale. Efficacy and HRQoL evaluations are reported up to Day 1765 (~ Year 5.5). Safety is presented for the cumulative period (lead-in, DB and LTE), for all pts who received abatacept during the LTE. Of the 153 pts entering the LTE (58 from DB abatacept group, 59 from DB pbo group, 36 NR), 69 completed the trial (29 abatacept, 27 pbo, 13 NR). For pts treated in the LTE, mean (range) exposure to abatacept was 53.6 (5.6–85.6) months. During the LTE, incidence rates of AEs and serious AEs per 100 pt-years were 209.1 and 5.6. Thirty pts (19.6%) had serious AEs; most were unrelated and were musculoskeletal (8.5%) or infectious events (6.5%). No malignancy was reported. There was one death (accidental; unrelated). At Day 169, JIA ACR 50 and 70 response rates were 79.3% and 55.2% in the abatacept group, and 52.5% and 30.5% in the pbo group; 31.0% and 10.2% of pts in the abatacept and pbo groups, respectively, had inactive disease. By Day 1765, JIA ACR 50 and 70 response rates were 93.9% and 78.8% in the abatacept group, and 80.0% and 63.3% in the pbo group; 51.5% and 33.3% had inactive disease. In the NR group, 69.2% and 53.8% of pts achieved JIA ACR 50 and 70 responses at Day 1765, and 30.8% had inactive disease. In pts who entered the LTE, mean baseline PhS scores were below the range for healthy children (abatacept 30.2, pbo 31.0, NR 29.5). At Day 169, 38.3% of pts had reached a PhS score >50 ((1). By the end of the LTE, 43.5% of pts had reached a PhS score >50. At baseline, mean PsS scores for those who entered the LTE were slightly lower than the mean for healthy children (abatacept 43.5, pbo 44.2, NR 47.0). At Day 169, 54.9% of pts had a PsS score >50 (1). By Day 1765, 58.1% of pts had reached a PsS score >50. At baseline, the mean pain score was 42.9. By Day 169, 13.9% of pts were considered pain free (pain score = 0); this was maintained over the LTE (1).

Polymer Light Emitting Diode Using PFT-Poly(9,9 `-n-dihexil-2,7-fluorenodiilvinylene-alt-2,5thiophene)

The development of new electroluminescence polymers for specific colour tuning in Polymer Light Emitting Devices (PLEDs) is currently one of the most important fields for organic electronics. This work reports a synthesis of a new electroluminescent polymer and the concomitant test as PLED emissive layer. The polymer, synthesised from fluorene, is poly(9,9`-n-dihexil-2,7-fluorenodiilvinylene-alt-2,5thiophene) or PFT The luminescence shows large bands with maxima around 480 nm in absorption and 560 nm in emission. The device was made in a three layer structure, with PEDOT:PSS as hole transport layer, PFT as emissive layer and butyl-PBD as electron transport layer. The electroluminescence spectrum shows a strong band peaked at 540 nm. For an applied voltage of 12 Volt, the brightness at normal angle of viewing is near 10 cd/m(2) and the luminous efficiency is of 0.01 lm/W. A discussion about carrier transport and the electroluminescence properties is made.

GaMnAs: Position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations

Among all magnetic semiconductors, GaMnAs seems to be the most important one. In this work, we present accurate first-principles calculations of GaMnAs within the GGA-1/2 approach: We concentrate our efforts in obtaining the position of the peak of Mn-d levels in the valence band and also the majority spin band gap. For the position of the Mn-d peak, we find a value of 3.3 eV below the Fermi level, in good agreement with the most recent experimental results of 3.5 and 3.7 eV. An analytical expression that fits the calculated E-g(x) for majority spin is derived in order to provide ready access to the band gap for the composition range from 0 to 0.25. We found a value of 3.9 eV for the gap bowing parameter. The results agree well with the most recent experimental data. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718602]

Galaxy triplets in Sloan Digital Sky Survey Data Release 7: II. A connection with compact groups?

We analyse a sample of 71 triplets of luminous galaxies derived from the work of O’Mill et al. We compare the properties of triplets and their members with those of control samples of compact groups, the 10 brightest members of rich clusters and galaxies in pairs. The triplets are restricted to have members with spectroscopic redshifts in the range 0.01 ≤ z ≤ 0.14 and absolute r-band luminosities brighter than Mr = −20.5. For these member galaxies, we analyse the stellar mass content, the star formation rates, the Dn(4000) parameter and (Mg − Mr) colour index. Since galaxies in triplets may finally merge in a single system, we analyse different global properties of these systems. We calculate the probability that the properties of galaxies in triplets are strongly correlated. We also study total star formation activity and global colours, and define the triplet compactness as a measure of the percentage of the system total area that is filled by the light of member galaxies. We concentrate in the comparison of our results with those of compact groups to assess how the triplets are a natural extension of these compact systems. Our analysis suggests that triplet galaxy members behave similarly to compact group members and galaxies in rich clusters. We also find that systems comprising three blue, star-forming, young stellar population galaxies (blue triplets) are most probably real systems and not a chance configuration of interloping galaxies. The same holds for triplets composed of three red, non-star-forming galaxies, showing the correlation of galaxy properties in these systems. From the analysis of the triplet as a whole, we conclude that, at a given total stellar mass content, triplets show a total star formation activity and global colours similar to compact groups. However, blue triplets show a high total star formation activity with a lower stellar mass content. From an analysis of the compactness parameter of the systems we find that light is even more concentrated in triplets than in compact groups. We propose that triplets composed of three luminous galaxies, should not be considered as an analogous of galaxy pairs with a third extra member, but rather they are a natural extension of compact groups.

Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

Photovoltaics from discotic liquid crystalline HBCs & poly(2,7-carbazole)s

In this study, the use of the discotic liquid crystalline HBCs and conjugated polymers based on 2,7-carbazole were investigated in detail as donor materials in organic bulk-heterojunction solar cells. It has been shown that they perform efficiently in photovoltaic devices in combination with suitable acceptors. The efficiency was found to depend strongly dependent on the morphology of the film. By investigation of a series of donor materials with similar molecular structures based on both discotic molecules and conjugated polymers, a structure-performance relation was established, which is not only instructive for these materials but also serves as a guideline for improved molecular design. For the series of HBCs used in this study, it is found that the device efficiency decreases with increasing length of the alkyl substituents in the HBC. Thus, the derivative with the smallest alkyl mantle, being more crystalline compared to the HBCs with longer alkyl chains, gave the highest EQE of 12%. A large interfacial separation was found in the blend of HBC-C6,2 and PDI, since the crystallization of the acceptor occurred in a solid matrix of HBC. This led to small dispersed organized domains and benefited the charge transport. In contrast, blends of HBC-C10,6/PDI or HBC-C14,10/PDI revealed a rather homogeneous film limiting the percolation pathways due to a mixed phase. For the first time, poly(2,7-carbazole) was incorporated as a donor material in solar cells using PDI as an electron acceptor. The good fit in orbital energy levels and absorption spectra led to high efficiency. This result indicates that conjugated polymers with high band-gap can also be applied as materials to build efficient solar cells if appropriate electron acceptors are chosen. In order to enhance the light absorption ability, new ladder-type polymers based on pentaphenylene and hexaphenylene with one and three nitrogen bridges per repeat unit have been synthesized and characterized. The polymer 2 with three nitrogen bridges showed more red-shifted absorbance and emission and better packing in the solid-state than the analogous polymer 3 with only one nitrogen bridge per monomer unit. An overall efficiency as high as 1.3% under solar light was obtained for the device based on 1 and PDI, compared with 0.7% for the PCz based device. Therefore, the device performance correlates to a large extent with the solar light absorption ability and the lateral distance between conjugated polymer chains. Since the lateral distance is determined by the length and number of attached alkyl side chains, it is possible to assume that these substituents insulate the charge carrier pathways and decrease the device performance. As an additional consequence, the active semiconductor is diluted in the insulating matrix leading to a lower light absorption. This work suggests ways to improve device performance by molecular design, viz. maintaining the HOMO level while bathochromically shifting the absorption by adopting a more rigid ladder-type structure. Also, a high ratio of nitrogen bridges with small alkyl substituents was a desirable feature both in terms of adjusting the absorption and maintaining a low lateral inter-chain separation, which was necessary for obtaining high current and efficiency values.

Band structure of Heusler compounds studied by photoemission and tunneling spectroscopy

Heusler compounds are key materials for spintronic applications. They have attracted a lot of interest due to their half-metallic properties predicted by band structure calculations.rnThe aim of this work is to evaluate experimentally the validity of the predictions of half metallicity by band structure calculations for two specific Heusler compounds, Co2FeAl0.3Si0.7 and Co2MnGa. Two different spectroscopy methods for the analysis of the electronic properties were used: Angular Resolved Ultra-violet Photoemission Spectroscopy (ARUPS) and Tunneling Spectroscopy.rnHeusler compounds are prepared as thin films by RF-sputtering in an ultra-high vacuum system. rnFor the characterization of the samples, bulk and surface crystallographic and magnetic properties of Co2FeAl0.3Si0.7 and Co2MnGa are studied. X-ray and electron diffraction reveal a bulk and surface crossover between two different types of sublattice order (from B2 to L21) with increasing annealing temperature. X-ray magnetic circular dichroism results show that the magnetic properties in the surface and bulk are identical, although the magnetic moments obtained are 5% below from the theoretically predicted.rnBy ARUPS evidence for the validity of the predicted total bulk density of states (DOS) was demonstrated for both Heusler compounds. Additional ARUPS intensity contributions close to the Fermi energy indicates the presence of a specific surface DOS. Moreover, it is demonstrated that the crystallographic order, controlled by annealing, plays an important role on brodening effects of DOS features. Improving order resulted in better defined ARUPS features.rnTunneling magnetoresistance measurements of Co2FeAl0.3Si0.7 and Co2MnGa based MTJ’s result in a Co2FeAl0.3Si0.7 spin polarization of 44%, which is the highest experimentally obtained value for this compound, although it is lower than the 100% predicted. For Co2MnGa no high TMR was achieved.rnUnpolarized tunneling spectroscopy reveals contribution of interface states close to the Fermi energy. Additionally magnon excitations due to magnetic impurities at the interface are observed. Such contributions can be the reason of a reduced TMR compared to the theoretical predictions. Nevertheless, for energies close to the Fermi energy and for Co2MnGa, the validity of the band structure calculations is demonstrated with this technique as well.