Contrastive study of two SESAMs for passive mode-locking in Nd:YVC>4 laser with low pump power

Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW

Comparative study of the mode-locking of Nd:GdVO4 and Nd:YAG lasers with semiconductor saturable absorber mirrors

Stable continuous-wave passive mode-locking of diode-end-pumped Nd:GdVO4 and Nd:YAG lasers withsemiconductor saturable absorber mirrors (SESAMs) are reported. The comparative study shows that theNd:GdVO4 crystal is efficient to decrease the Q-switched mode-locking tendency, and easier to continuous-wave (CW) mode lock than Nd:YAG.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

LD Side-Pumped Passive Mode-Locked TEM00 Nd:YAG Laser Based on SESAM

We report an LD side-pumped continuous-wave passive mode-locked Nd:YAG laser with a Z-type folded cavity based on a semiconductor saturable absorber mirror (SESAM). The average output power 2.95 W of mode-locked laser with electro-optical conversion efficiency of 1.3% and high beam quality (M-x(2) = 1.25 and M-y(2) = 1.22) is achieved. The repetition rate of mode-locked pulse of 88 MHz with pulse energy of 34 nJ is obtained.

Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film

The large-size domain and continuous para-sexiphenyl (p-6P) ultrathin film was fabricated successfully on silicon dioxide (SiO2) substrate and investigated by atomic force microscopy and selected area electron diffraction. At the optimal substrate temperature of 180 degrees C, the first-layer film exhibits the mode of layer growth, and the domain size approaches 100 mu m(2). Its saturated island density (0.018 mu m(-2)) is much smaller than that of the second-layer film (0.088 mu m(-2)), which begins to show the Volmer-Weber growth mode.

Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs

This PhD covers the development of planar inversion-mode and junctionless Al2O3/In0.53Ga0.47As metal-oxidesemiconductor field-effect transistors (MOSFETs). An implant activation anneal was developed for the formation of the source and drain (S/D) of the inversionmode MOSFET. Fabricated inversion-mode devices were used as test vehicles to investigate the impact of forming gas annealing (FGA) on device performance. Following FGA, the devices exhibited a subthreshold swing (SS) of 150mV/dec., an ION/IOFF of 104 and the transconductance, drive current and peak effective mobility increased by 29%, 25% and 15%, respectively. An alternative technique, based on the fitting of the measured full-gate capacitance vs gate voltage using a selfconsistent Poisson-Schrödinger solver, was developed to extract the trap energy profile across the full In0.53Ga0.47As bandgap and beyond. A multi-frequency inversion-charge pumping approach was proposed to (1) study the traps located at energy levels aligned with the In0.53Ga0.47As conduction band and (2) separate the trapped charge and mobile charge contributions. The analysis revealed an effective mobility (μeff) peaking at ~2850cm2/V.s for an inversion-charge density (Ninv) = 7*1011cm2 and rapidly decreasing to ~600cm2/V.s for Ninv = 1*1013 cm2, consistent with a μeff limited by surface roughness scattering. Atomic force microscopy measurements confirmed a large surface roughness of 1.95±0.28nm on the In0.53Ga0.47As channel caused by the S/D activation anneal. In order to circumvent the issue relative to S/D formation, a junctionless In0.53Ga0.47As device was developed. A digital etch was used to thin the In0.53Ga0.47As channel and investigate the impact of channel thickness (tInGaAs) on device performance. Scaling of the SS with tInGaAs was observed for tInGaAs going from 24 to 16nm, yielding a SS of 115mV/dec. for tInGaAs = 16nm. Flat-band μeff values of 2130 and 1975cm2/V.s were extracted on devices with tInGaAs of 24 and 20nm, respectively

Is observed variability in the long-term results of the Continuous Plankton Recorder survey a response to climate change?

In the more than 50 years that the Continuous Plankton Recorder (CPR) survey has operated on a regular monthly basis in the north-east Atlantic and North Sea, large changes have been witnessed in the planktonic ecosystem. These changes have taken the form of long-term trends in abundance for certain species or stepwise changes for others, and in many cases are correlated with a mode of climatic variability in the North Atlantic, either: (1) the North Atlantic Oscillation (NAO), a basin-scale atmospheric alteration of the pressure field between the Azores high pressure cell and the Icelandic Low; or (2) the Gulf Stream Index (GSI), which measures the latitudinal position of the north wall of the Gulf Stream. Recent work has shown that the changes in the GSI are coupled with the NAO and Pacific Southern Oscillation with a 2 year lag. The plankton variability is also possibly linked to changes observed in the distribution and flux of water masses in the surface, intermediate and deep waters of the North Atlantic. For example, in the last two decades, the extent and location of the formation of North Atlantic Deep Water, Labrador Sea Intermediate Water and Norwegian Sea intermediate and upper-layer water has altered considerably. This paper discusses the extent to which observed changes in plankton abundance and distribution may be linked to this basin-scale variability in hydrodynamics. The results are also placed within the context of global climate warming and the possible effects of the observed melting of Arctic permafrost and sea ice on the subpolar North Atlantic.

Quantum teleportation via mixed two-mode squeezed states in the coherent-state representation

Quantum teleportation for continuous variables is generally described in phase space by using the Wigner functions. We study quantum teleportation via a mixed two-mode squeezed state in Hilbert-Schmidt space by using the coherent-state representation and operators. This shows directly how the teleported state is related to the original state.

Entanglement transfer from continuous variables to qubits

We show that two qubits can be entangled by local interactions with an entangled two-mode continuous variable state. This is illustrated by the evolution of two two-level atoms interacting with a two-mode squeezed state. Two modes of the squeezed field are injected respectively into two spatially separate cavities and the atoms are then sent into the cavities to interact resonantly with the cavity field. We find that the atoms may be entangled even by a two-mode squeezed state which has been decohered while penetrating into the cavity.

Towards variance-matrix characterization of complementarity relations in a continuous variable system

We discuss complementarity relations in a bipartite continuous variable system. Building up from the work done on discrete d-dimensional systems, we prove that for symmetric two-mode states, quantum complementarity relations can be put in a simple relation with the elements of the variance matrix. When this condition is not satisfied, such a connection becomes non-trivial. Our investigation is the first step towards an operative characterization of the complementarity in a scenario that has not been investigated so far.

Passing quantum correlations to qubits using any two-mode state

We draw an explicit connection between the statistical properties of an entangled two-mode continuous variable (CV) resource and the amount of entanglement that can be dynamically transferred to a pair of noninteracting two-level systems. More specifically, we rigorously reformulate entanglement-transfer process by making use of covariance matrix formalism. When the resource state is Gaussian, our method makes the approach to the transfer of quantum correlations much more flexible than in previously considered schemes and allows the straightforward inclusion of the effects of noise affecting the CV system. Moreover, the proposed method reveals that the use of de-Gaussified two-mode states is almost never advantageous for transferring entanglement with respect to the full Gaussian picture, despite the entanglement in the non-Gaussian resource can be much larger than in its Gaussian counterpart. We can thus conclude that the entanglement-transfer map overthrows the

Testing quantum contextuality of continuous-variable states

We investigate the violation of noncontextuality by a class of continuous-variable states, including variations of entangled coherent states and a two-mode continuous superposition of coherent states. We generalize the Kochen-Specker (KS) inequality discussed by Cabello [A. Cabello, Phys. Rev. Lett. 101, 210401 (2008)] by using effective bidimensional observables implemented through physical operations acting on continuous-variable states, in a way similar to an approach to the falsification of Bell-Clauser-Horne-Shimony-Holt inequalities put forward recently. We test for state-independent violation of KS inequalities under variable degrees of state entanglement and mixedness. We then demonstrate theoretically the violation of a KS inequality for any two-mode state by using pseudospin observables and a generalized quasiprobability function.

Measurement of single mode imprint in laser ablative drive of a thin Al foil by extreme ultraviolet laser radiography

The temporal development of laser driven single mode perturbations in thin A1 foils has been measured using extreme ultraviolet (XUV) laser radiography. 15, 30, 70 and 90 mu m single modes were imprinted on 2 mu m thick A1 foils with an optical driver laser at 527 nm for intensities in the range 5 x 10(12) to 1.5 x 10(13) W cm(-2). The magnitude of the imprinted perturbation at the time of shock break out was determined by fitting to the data estimated curves of growth of the Rayleigh-Taylor instability after shock break out. The efficiency of imprinting is independent of perturbation wavelength in the parameter range of this experiment, suggesting little influence of thermal conduction smoothing. The results are of interest for directly driven inertially confined fusion. (C) 1998 American Institute of Physics.

Microwave-assisted Cu-catalyzed Ullmann ether synthesis in a continuous-flow milli-plant

The combination of milli-scale processing and microwave heating has been investigated for the Cu-catalyzed Ullmann etherification in fine-chemical synthesis, providing improved catalytic activity and selective catalyst heating. Wall-coated and fixed-bed milli-reactors were designed and applied in the Cu-catalyzed Ullmann-type CO coupling of phenol and 4-chloropyridine. In a batch reactor the results show clearly increased yields for the microwave heated process at low microwave powers, whereas high powers and catalyst loadings reduced the benefits of microwave heating. Slightly higher yields were found in the Cu/ZnO wall-coated as compared to the Cu/TiO fixed-bed flow-reactor. The benefit here is that the reaction occurs at the surface of the metal nanoparticles confined within a support film making the nano-copper equally accessible. Catalyst deactivation was mainly caused by Cu oxidation and coke formation; however, at longer process times leaching played a significant role. Catalyst activity could partially be recovered by removal of deposited by-product by means of calcination. After 6h on-stream the reactor productivities were 28.3 and 55.1kgprod/(mR3h) for the fresh Cu/ZnO wall-coated and Cu/TiO fixed-bed reactor, respectively. Comparison of single- and multimode microwaves showed a threefold yield increase for single-mode microwaves. Control of nanoparticles size and loading allows to avoid high temperatures in a single-mode microwave field and provides a novel solution to a major problem for combining metal catalysis and microwave heating. Catalyst stability appeared to be more important and provided twofold yield increase for the CuZn/TiO catalyst as compared to the Cu/TiO catalyst due to stabilized copper by preferential oxidation of the zinc. For this catalyst a threefold yield increase was observed in single-mode microwaves which, to the best of our knowledge, led to a not yet reported productivity of 172kgprod/(mR3h) for the microwave and flow Ullmann CO coupling. © 2012 Elsevier B.V.

Three-mode entanglement by interlinked nonlinear interactions in optical chi((2)) media

We address the generation of fully inseparable three-mode entangled states of radiation by interlinked nonlinear interactions in chi((2)) media. We show how three-mode entanglement can be used to realize symmetric and asymmetric telecloning machines, which achieve optimal fidelity for coherent states. An experimental implementation involving a single nonlinear crystal in which the two interactions take place simultaneously is suggested. Preliminary experimental results showing the feasibility and the effectiveness of the interaction scheme with a seeded crystal are also presented. (C) 2004 Optical Society of America.