Young’s modulus of silicon nitride used in scanning force microscope cantilevers

The Young’s modulus and Poisson’s ratio of high-quality silicon nitride films with 800 nm thickness, grown on silicon substrates by low-pressure chemical vapor deposition, were determined by measuring the dispersion of laser-induced surface acoustic waves. The Young’s modulus was also measured by mechanical tuning of commercially available silicon nitride cantilevers, manufactured from the same material, using the tapping mode of a scanning force microscope. For this experiment, an expression for the oscillation frequencies of two-media beam systems is derived. Both methods yield a Young’s modulus of 280–290 GPa for amorphous silicon nitride, which is substantially higher than previously reported (E5146 GPa). For Poisson’s ratio, a value of n 50.20 was obtained. These values are relevant for the determination of the spring constant of the cantilever and the effective tip–sample stiffness

Preparation and Characterization ofHigh-k Aluminum Oxide Thin Films by Atomic Layer Deposition for Gate Dielectric Applications

Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

Magnetische Kopplungen in magneto-optischen Speicherschichten

Im Rahmen dieser Arbeit wurden magneto-optische Speicherschichten und ihre Kopplungen untereinander untersucht. Hierzu wurden zum Einen die für die magneto-optische Speichertechnologie "klassischen" Schichten aus RE/TM-Legierungen verwendet, zum Anderen aber auch erfolgreich Granate integriert, die bisher nicht in diesem Anwendungsgebiet verwendet wurden. Einleitend werden die magneto-optischen Verfahren, die resultierenden Anforderungen an die dünnen Schichten und die entsprechenden physikalischen Grundlagen diskutiert. Außerdem wird auf das Hochfrequenz-Sputtern von RE/TM-Legierungen eingegangen und die verwendeten magneto-optischen Messverfahren werden erläutert [Kap. 2 & 3]. Die Untersuchungen an RE/TM-Schichten bestätigen die aus der Literatur bekannten Eigenschaften. Sie lassen sich effektiv, und für magneto-optische Anwendungen geeignet, über RF-Sputtern herstellen. Die unmittelbaren Schicht-Parameter, wie Schichtdicke und Terbium-Konzentration, lassen sich über einfache Zusammenhänge einstellen. Da die Terbium-Konzentration eine Änderung der Kompensationstemperatur bewirkt, lässt sich diese mit Messungen am Kerr-Magnetometer überprüfen. Die für die Anwendung interessante senkrechte magnetische Anisotropie konnte ebenfalls mit den Herstellungsbedingungen verknüpft werden. Bei der Herstellung der Schichten auf einer glatten Glas-Oberfläche (Floatglas) zeigt die RE/TM-Schicht bereits in den ersten Lagen ein Wachstumsverhalten, das eine senkrechte Anisotropie bewirkt. Auf einer Quarzglas- oder Keramik-Oberfläche wachsen die ersten Lagen in einer durch das Substrat induzierten Struktur auf, danach ändert sich das Wachstumsverhalten stetig, bis eine senkrechte Anisotropie erreicht wird. Dieses Verhalten kann auch durch verschiedene Pufferschichten (Aluminium und Siliziumnitrid) nur unwesentlich beeinflusst werden [Kap. 5 & Kap. 6]. Bei der direkten Aufbringung von Doppelschichten, bestehend aus einer Auslese-Schicht (GdFeCo) auf einer Speicherschicht (TbFeCo), wurde die Austausch-Kopplung demonstriert. Die Ausleseschicht zeigt unterhalb der Kompensationstemperatur keine Kopplung an die Speicherschicht, während oberhalb der Kompensationstemperatur eine direkte Kopplung der Untergitter stattfindet. Daraus ergibt sich das für den MSR-Effekt erwünschte Maskierungsverhalten. Die vorher aus den Einzelschichten gewonnen Ergebnisse zu Kompensationstemperatur und Wachstumsverhalten konnten in den Doppelschichten wiedergefunden werden. Als Idealfall erweist sich hier die einfachste Struktur. Man bringt die Speicherschicht auf Floatglas auf und bedeckt diese direkt mit der Ausleseschicht [Kap. 7]. Weiterhin konnte gezeigt werden, dass es möglich ist, den Faraday-Effekt einer Granatschicht als verstärkendes Element zu nutzen. Im anwendungstauglichen, integrierten Schichtsystem konnten die kostengünstig, mit dem Sol-Gel-Verfahren produzierten, Granate die strukturellen Anforderungen nicht erfüllen, da sich während der Herstellung Risse und Löcher gebildet haben. Bei der experimentellen Realisierung mit einer einkristallinen Granatschicht und einer RE/TM-Schicht konnte die prinzipielle Eignung des Schichtsystems demonstriert werden [Kap. 8].

Development of hybrid UV VCSEL with organic active material and dielectric DBR mirrors for medical, sensoric and data storage applications

Lasers play an important role for medical, sensoric and data storage devices. This thesis is focused on design, technology development, fabrication and characterization of hybrid ultraviolet Vertical-Cavity Surface-Emitting Lasers (UV VCSEL) with organic laser-active material and inorganic distributed Bragg reflectors (DBR). Multilayer structures with different layer thicknesses, refractive indices and absorption coefficients of the inorganic materials were studied using theoretical model calculations. During the simulations the structure parameters such as materials and thicknesses have been varied. This procedure was repeated several times during the design optimization process including also the feedback from technology and characterization. Two types of VCSEL devices were investigated. The first is an index coupled structure consisting of bottom and top DBR dielectric mirrors. In the space in between them is the cavity, which includes active region and defines the spectral gain profile. In this configuration the maximum electrical field is concentrated in the cavity and can destroy the chemical structure of the active material. The second type of laser is a so called complex coupled VCSEL. In this structure the active material is placed not only in the cavity but also in parts of the DBR structure. The simulations show that such a distribution of the active material reduces the required pumping power for reaching lasing threshold. High efficiency is achieved by substituting the dielectric material with high refractive index for the periods closer to the cavity. The inorganic materials for the DBR mirrors have been deposited by Plasma- Enhanced Chemical Vapor Deposition (PECVD) and Dual Ion Beam Sputtering (DIBS) machines. Extended optimizations of the technological processes have been performed. All the processes are carried out in a clean room Class 1 and Class 10000. The optical properties and the thicknesses of the layers are measured in-situ by spectroscopic ellipsometry and spectroscopic reflectometry. The surface roughness is analyzed by atomic force microscopy (AFM) and images of the devices are taken with scanning electron microscope (SEM). The silicon dioxide (SiO2) and silicon nitride (Si3N4) layers deposited by the PECVD machine show defects of the material structure and have higher absorption in the ultra violet range compared to ion beam deposition (IBD). This results in low reflectivity of the DBR mirrors and also reduces the optical properties of the VCSEL devices. However PECVD has the advantage that the stress in the layers can be tuned and compensated, in contrast to IBD at the moment. A sputtering machine Ionsys 1000 produced by Roth&Rau company, is used for the deposition of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3) and zirconium dioxide (ZrO2). The chamber is equipped with main (sputter) and assisted ion sources. The dielectric materials were optimized by introducing additional oxygen and nitrogen into the chamber. DBR mirrors with different material combinations were deposited. The measured optical properties of the fabricated multilayer structures show an excellent agreement with the results of theoretical model calculations. The layers deposited by puttering show high compressive stress. As an active region a novel organic material with spiro-linked molecules is used. Two different materials have been evaporated by utilizing a dye evaporation machine in the clean room of the department Makromolekulare Chemie und Molekulare Materialien (mmCmm). The Spiro-Octopus-1 organic material has a maximum emission at the wavelength λemission = 395 nm and the Spiro-Pphenal has a maximum emission at the wavelength λemission = 418 nm. Both of them have high refractive index and can be combined with low refractive index materials like silicon dioxide (SiO2). The sputtering method shows excellent optical quality of the deposited materials and high reflection of the multilayer structures. The bottom DBR mirrors for all VCSEL devices were deposited by the DIBS machine, whereas the top DBR mirror deposited either by PECVD or by combination of PECVD and DIBS. The fabricated VCSEL structures were optically pumped by nitrogen laser at wavelength λpumping = 337 nm. The emission was measured by spectrometer. A radiation of the VCSEL structure at wavelength 392 nm and 420 nm is observed.

Modification and Analysis of Group-13-Nitride Semiconductor Surfaces: Influence of Adsorbates on Device Characteristics and Processing

Im Rahmen dieser interdisziplinären Doktorarbeit wird eine (Al)GaN Halbleiteroberflächenmodifikation untersucht, mit dem Ziel eine verbesserte Grenzfläche zwischen dem Material und dem Dielektrikum zu erzeugen. Aufgrund von Oberflächenzuständen zeigen GaN basierte HEMT Strukturen üblicherweise große Einsatzspannungsverschiebungen. Bisher wurden zur Grenzflächenmodifikation besonders die Entfernung von Verunreinigungen wie Sauerstoff oder Kohlenstoff analysiert. Die nasschemischen Oberflächenbehandlungen werden vor der Abscheidung des Dielektrikums durchgeführt, wobei die Kontaminationen jedoch nicht vollständig entfernt werden können. In dieser Arbeit werden Modifikationen der Oberfläche in wässrigen Lösungen, in Gasen sowie in Plasma analysiert. Detaillierte Untersuchungen zeigen, dass die inerte (0001) c-Ebene der Oberfläche kaum reagiert, sondern hauptsächlich die weniger polaren r- und m- Ebenen. Dies kann deutlich beim Defektätzen sowie bei der thermischen Oxidation beobachtet werden. Einen weiteren Ansatz zur Oberflächenmodifikation stellen Plasmabehandlungen dar. Hierbei wird die Oberflächenterminierung durch eine nukleophile Substitution mit Lewis Basen, wie Fluorid, Chlorid oder Oxid verändert, wodurch sich die Elektronegativitätsdifferenz zwischen dem Metall und dem Anion im Vergleich zur Metall-Stickstoff Bindung erhöht. Dies führt gleichzeitig zu einer Erhöhung der Potentialdifferenz des Schottky Kontakts. Sauerstoff oder Fluor besitzen die nötige thermische Stabilität um während einer Silicium-nitridabscheidung an der (Al)GaN Oberfläche zu bleiben. Sauerstoffvariationen an der Oberfläche werden in NH3 bei 700°C, welches die nötigen Bedingungen für die Abscheidung darstellen, immer zu etwa 6-8% reduziert – solche Grenzflächen zeigen deswegen auch keine veränderten Ergebnisse in Einsatzspannungsuntersuchungen. Im Gegensatz dazu zeigt die fluorierte Oberfläche ein völlig neues elektrisches Verhalten: ein neuer dominanter Oberflächendonator mit einem schnellen Trapping und Detrapping Verhalten wird gefunden. Das Energieniveau dieses neuen, stabilen Donators liegt um ca. 0,5 eV tiefer in der Bandlücke als die ursprünglichen Energieniveaus der Oberflächenzustände. Physikalisch-chemische Oberflächen- und Grenzflächenuntersuchung mit XPS, AES oder SIMS erlauben keine eindeutige Schlussfolgerung, ob das Fluor nach der Si3N4 Abscheidung tatsächlich noch an der Grenzfläche vorhanden ist, oder einfach eine stabilere Oberflächenrekonstruktion induziert wurde, bei welcher es selbst nicht beteiligt ist. In beiden Fällen ist der neue Donator in einer Konzentration von 4x1013 at/cm-2 vorhanden. Diese Dichte entspricht einer Oberflächenkonzentration von etwa 1%, was genau an der Nachweisgrenze der spektroskopischen Methoden liegt. Jedoch werden die elektrischen Oberflächeneigenschaften durch die Oberflächenmodifikation deutlich verändert und ermöglichen eine potentiell weiter optimierbare Grenzfläche.

High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth

High density, uniform GaN nanodot arrays with controllable size have been synthesized by using template-assisted selective growth. The GaN nanodots with average diameter 40nm, 80nm and 120nm were selectively grown by metalorganic chemical vapor deposition (MOCVD) on a nano-patterned SiO2/GaN template. The nanoporous SiO2 on GaN surface was created by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) template as a mask. This selective regrowth results in highly crystalline GaN nanodots confirmed by high resolution transmission electron microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode.

Influence of aluminum hydroxide on potassium release from two Colombian soils

The effect of sesquioxides on the mechanisms of chemical reactions that govern the transformation between exchangeable potassium (Kex) and non-exchangeable K (Knex) was studied on acid tropical soils from Colombia: Caribia with predominantly 2 : 1 clay minerals and High Terrace with predominantly 1 : 1 clay minerals and sesquioxides. Illite and vermiculite are the main clay minerals in Caribia followed by kaolinite, gibbsite, and plagioclase, and kaolinite is the major clay mineral in High Terrace followed by hydroxyl-Al interlayered vermiculite, quartz, and pyrophyllite. The soils have 1.8 and 0.5% of K2O, respectively. They were used either untreated or prepared by adding AlCl3 and NaOH, which produced aluminum hydroxide. The soils were percolated continuously with 10mM NH4OAc at pH 7.0 and 10 mM CaCl2 at pH 5.8 for 120 h at 6 mL h(-1) to examine the release of Kex and Knex. In the untreated soils, NH4+ and Ca-2(+) released the same amounts of Kex from Caribia, whereas NH4+ released about twice as much Kex as Ca2+ from High Terrace. This study proposes that the small ionic size of NH4+ (0.54nm) enables it to enter more easily into the K sites at the broken edges of the kaolinite where Ca2+ (0.96 nm) cannot have access. As expected for a soil dominated by 2 : 1 clay minerals, Ca2+ caused Knex to be released from Caribia with no release by NH4+. No Knex was released by either ion from High Terrace. After treatment with aluminum hydroxide, K release from the exchangeable fraction was reduced in Caribia due to the blocking of the exchange sites but release of Knex was not affected. The treatment increased the amount of Kex released from the High Terrace soil and the release of Knex remained negligible although with Ca2+ the distinction between Kex and Knex was unclear. The increase in Kex was attributed to the initially acidic conditions produced by adding AlCl3 which may have dissolved interlayered aluminum hydroxide from the vermiculite present, thus exposing trapped K as exchangeable K. The subsequent precipitation of aluminum hydroxide when NaOH was added did not interfere with the release of this K, and so was probably formed mostly on the surface of the dominant kaolinite. Measurement of availability of K by standard methods using NH4 salts could result in overestimates in High Terrace and this may be a more general shortcoming of the methods in kaolinitic soils.

Molecular aluminum hydrides identified by inelastic neutron scattering during H-2 regeneration of catalyst-doped NaAlH4

Catalyst-doped sodium aluminum hydrides have been intensively studied as solid hydrogen carriers for onboard proton-exchange membrane (PEM) fuel cells. Although the importance of catalyst choice in enhancing kinetics for both hydrogen uptake and release of this hydride material has long been recognized, the nature of the active species and the mechanism of catalytic action are unclear. We have shown by inelastic neutron scattering (INS) spectroscopy that a volatile molecular aluminum hydride is formed during the early stage of H-2 re-eneration of a depleted, catalyst-doped sodium aluminum hydride. Computational modeling of the INS spectra suggested the formation of AlH3 and oligomers (AlH3)(n) (Al2H6, Al3H9, and Al4H12 clusters), which are pertinent to the mechanism of hydrogen storage. This paper demonstrates, for the first time, the existence of these volatile species.

Efficiency and purity control in the preparation of pure and/or aluminum-doped barium ferrites by hydrothermal methods using ferrous ions as reactants

The synthesis of hexagonal barium ferrite (BaFe12O19) was studied under hydrothermal conditions by a method in which a significant amount of ferrous chloride was introduced along side ferric chloride among the starting materials. Though all of the Fe2+ ions in the starting material were converted to Fe3+ ions in the final product, Fe2+ was confirmed to participate differently from the Fe3+ used in the conventional method in the mechanism of forming barium ferrite. Indeed the efficiency of the synthesis and the quality of the product and the lack of impurities such as Fe2O3 and BaFe2O4 were improved when Fe2+ was included. However, the amount of ferrous ions that could be included to obtain the desired product was limited with an optimum ratio of 2:8 for FeCl2/FeCl3 when only 2h of reaction time were needed. It was also found that the role of trivalent Fe3+ could be successfully replaced by Al3+. Up to 50% of their on could be replaced by Al3+ in the reactants to produce Al- doped products. It was also found that the ratio of Fe2+/M3+ could be increased in the presence of Al3+ to produce high quality barium ferrite.

Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation

Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C2xB1−xN1−x alloys via both compositional and configurational modification. We start from the BN end-member, which already has a large bandgap, and then show that (a) the bandgap can in principle be reduced to about 2 eV with moderate substitution of C (x < 0.25); and (b) the electronic structure of C2xB1−xN1−x can be further tuned not only with composition x, but also with the configuration adopted by C substituents in the BN matrix. Our analysis, based on accurate screened hybrid functional calculations, provides a clear understanding of the correlation found between the bandgap and the level of aggregation of C atoms: the bandgap decreases most when the C atoms are maximally isolated, and increases with aggregation of C atoms due to the formation of bonding and anti-bonding bands associated with hybridization of occupied and empty defect states. We determine the location of valence and conduction band edges relative to vacuum and discuss the implications on the potential use of 2D C2xB1−xN1−x alloys in photocatalytic applications. Finally, we assess the thermodynamic limitations on the formation of these alloys using a cluster expansion model derived from first-principles.

Bond durability in erbium:yttrium-aluminum-garnet laser-irradiated enamel

This study sought to evaluate the influence of thermocycling and water storage on the microtensile bond strength of composite resin bonded to erbium:yttrium-aluminum-garnet (Er:YAG)-irradiated and bur-prepared enamel. Eighty bovine incisors were selected and sectioned. Specimens were ground to produce a flat enamel surface. Samples were randomly assigned according to cavity preparation device: (I) Er:YAG laser and (II) high-speed turbine, and were subsequently restored with composite resin. They were subdivided according to the duration of water storage (WS)/number of thermocycles (TCs): 24 h WS/no TCs; 7 days WS/500 TCs; 1 month WS/2,000 TCs; 6 months WS/12,000 TCs. The teeth were sectioned into 1.0 mm(2)-thick slabs and subjected to tensile stress in a universal testing machine. Data were submitted to two-way analysis of variance (ANOVA) and Tukey`s test at a 0.05 significance level. The different periods of water storage and thermocycling did not influence the microtensile bond strength (A mu TBS) values in the Er:YAG laser-prepared groups. In bur-prepared enamel, the group submitted to 12,000 TCs/6 months` WS (IID) showed a significant decrease in bond strength values when compared to the group stored in water for 24 h and not submitted to thermocycling (IIA), but values were statistically similar to those obtained in all Er:YAG laser groups and in the bur- prepared groups degraded with 500 TCs/1 week WS (IIB) or 2,000 TCs/1 month WS (IIC). It may be concluded that adhesion of an etch-and-rinse adhesive to Er:YAG laser-irradiated enamel was not affected by the methods used to simulate degradation of the adhesive interface and was similar to adhesion in the bur-prepared groups in all periods of water storage and thermocycling.

Aluminum as an endocrine disruptor in female Nile tilapia (Oreochromis niloticus)

The effects of aluminum on plasma ion, lipid, protein and steroid hormone concentration were evaluated in Oreochromis niloticus broodstock females. Lipid and protein concentrations from the gonads and liver were also measured Experiments were performed at neutral and acidic water pH Four groups of fish were tested for 96 h. 1) control conditions at neutral water pH, 2) control conditions at acidic water pH (CTR-Ac). 3) aluminum at neutral water pH (Al-N), and 4) aluminum at acidic water pH (Al-Ac) Aluminum and acidic water pH exposure caused no ionoregulatory disturbances Total lipid concentration increased in the mature gonads and decreased in the liver, suggesting an acceleration of lipid mobilization to the ovaries in animals exposed to aluminum However, a decreased protein concentration in ovaries was also observed Exposure of control fish to acidic water pH caused an increased concentration of plasma 17 alpha-hydroxyprogesterone However, females exposed to aluminum at acidic water pH showed a decreased of plasma 17 alpha-hydroxyprogesterone and cortisol. No differences in plasma 17 beta-estradiol were observed The physiological mechanisms underlying the disturbances observed are discussed focusing on reproduction We suggest that aluminum can be considered an endocrine disrupting compound in mature O. mloticus females (C) 2010 Elsevier Inc. All rights reserved

Bone growth around silicon nitride implants - An evaluation by scanning electron microscopy

Silicon nitride has demonstrated to be a potential candidate for clinical applications because it is a non-cytotoxic material and has satisfactory fracture toughness, high wear resistance and low friction coefficient. In this paper, samples of silicon nitride, which were kept into rabbits` tibias for 8 weeks, and the adjacentbone tissue were analysed by scanning electron microscopy in order to verify the bone growth around the implants and the interaction between the implant and the bone. Bone growth occurred mainly in the cortical areas, although it has been observed that the newly bone tends to grow toward the marrow cavity. Differences were observed between the implants installed into distal and proximal regions. In the first region, where the distance between the implant and the cortical bone is greater than in the proximal region, the osteoconduction process was evidenced by the presence of a bridge bone formation toward the implant surface. The results showed that silicon nitride can be used as biomaterial since the newly bone grew around the implants. (c) 2007 Elsevier Inc. All rights reserved.

Tissue response around silicon nitride implants in rabbits

The chemical and dimensional stability associated with suitable fracture toughness and propitious tribological characteristics make silicon nitride-based ceramics potential candidates for biomedical applications, mainly as orthopedic implants. Considering this combination of properties, silicon nitride components were investigated in relation to their biocompatibility. For this study, two cylindrical implants were installed in each tibia of five rabbits and were kept in the animals for 8 weeks. During the healing time, tissue tracers were administrated in the animals so as to evaluate the bone growth around the implants. Eight weeks after the surgery, the animals were euthanized and histological analyses were performed. No adverse reactions were observed close to the implant. The osteogenesis process occurred during the entire period defined by the tracers. However, this process occurred more intensely 4 weeks after the surgery. In addition, the histological analyses showed that bone growth occurred preferentially in the cortical areas. Different kinds of tissue were identified on the implant surface, characterized by lamellar bone tissue containing osteocytes and osteons, by a noncalcified matrix containing osteoblasts, or by the presence of collagen III, which may change to collagen I or remain as a fibrous tissue. The results demonstrated that silicon nitride obtained according to the procedure proposed in this research is a biocompatible material. (c) 2007 Wiley Periodicals, Inc.

Chemical bonding and composition of silicon nitride films prepared by inductively coupled plasma chemical vapor deposition

Thin silicon nitride films were prepared at 350 degrees C by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH(3)/SiH(4) or N(2)/SiH(4) gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process parameters, such as the gas flow ratio NH(3)/SiH(4) or N(2)/SiH(4) and the RF power, using X-ray photoelectron spectroscopy (XPS). The gas flow ratio was 1.4, 4.3, 7.2 or 9.5 and the RF power, 50 or 100 W. Decomposition results of Si 2p XPS spectra indicated the presence of bulk Si, under-stoichiometric nitride, stoichiometric nitride Si(3)N(4), oxynitride SiN(x)O(y), and stoichiometric oxide SiO(2), and the amounts of these compounds were strongly influenced by the two process parameters. These results were consistent with those obtained from N 1s XPS spectra. The chemical composition ratio N/Si in the film increased with increasing the gas flow ratio until the gas flow ratio reached 4.3, reflecting the high reactivity of nitrogen, and stayed almost constant for further increase in gas flow ratio, the excess nitrogen being rejected from the growing film. A considerable and unexpected incorporation of contaminant oxygen and carbon into the depositing film was observed and attributed to their high chemical reactivity. (C) 2010 Elsevier B.V. All rights reserved.