Back to the future to revisit meanings

Tanto en los estudios sincrónicos como en los diacrónicos queda en evidencia que el español posee diferentes formas de expresar el tiempo futuro. Por ejemplo, la desinencia del futuro morfológico (-ré) alterna en el español actual con la perífrasis verbal ir+a+infinitivo tal y como se ve en los siguientes ejemplos de la variedad rioplatense: (1) CFK advirtió que "Vamos a sostener este modelo de crecimiento con todas las decisiones que haya que tomar" (Diario Digital 25-04-2012); (2) Rossi aseguró que votarán a favor de YPF unos doscientos diputados (La Nación 28-04-2012). Este hecho ha sido analizado por innumerables estudios y autores, muchos de los cuales se han aproximado a este tema desde la perspectiva variacionista que relaciona significados y contextos (Martínez 1987, Sedano 1994, Company 1999, Alaniz 2010); esta perspectiva explica dicha alternancia por medio de un continuum de factualidad el cual va desde la mayor factualidad de la perífrasis a la menor factualidad de la forma sintética. El análisis de los datos de acuerdo con dichos significados básicos postulados parecía confirmar la hipótesis, al menos en los contextos relacionados con la comunicación oral cotidiana (Martínez 1987). Sin embargo, un estudio más profundo sobre los usos de dichas formas en otros géneros discursivos (Mailhes 2010) nos lleva a replantearnos los significados básicos. En este sentido, la hipótesis que nos interesa confirmar es que las formas se encuentran vinculadas a la evaluación de los hechos por medio de la posibilidad de ejercer control sobre los mismos . Si existe control, se puede seleccionar la perífrasis; si no existe, la forma sintética será más apropiada. La ausencia de control puede dar lugar a una posibilidad más o menos remota así como a la profecía, dos esferas donde la variación es explotada

Back to the future to revisit meanings

Tanto en los estudios sincrónicos como en los diacrónicos queda en evidencia que el español posee diferentes formas de expresar el tiempo futuro. Por ejemplo, la desinencia del futuro morfológico (-ré) alterna en el español actual con la perífrasis verbal ir+a+infinitivo tal y como se ve en los siguientes ejemplos de la variedad rioplatense: (1) CFK advirtió que "Vamos a sostener este modelo de crecimiento con todas las decisiones que haya que tomar" (Diario Digital 25-04-2012); (2) Rossi aseguró que votarán a favor de YPF unos doscientos diputados (La Nación 28-04-2012). Este hecho ha sido analizado por innumerables estudios y autores, muchos de los cuales se han aproximado a este tema desde la perspectiva variacionista que relaciona significados y contextos (Martínez 1987, Sedano 1994, Company 1999, Alaniz 2010); esta perspectiva explica dicha alternancia por medio de un continuum de factualidad el cual va desde la mayor factualidad de la perífrasis a la menor factualidad de la forma sintética. El análisis de los datos de acuerdo con dichos significados básicos postulados parecía confirmar la hipótesis, al menos en los contextos relacionados con la comunicación oral cotidiana (Martínez 1987). Sin embargo, un estudio más profundo sobre los usos de dichas formas en otros géneros discursivos (Mailhes 2010) nos lleva a replantearnos los significados básicos. En este sentido, la hipótesis que nos interesa confirmar es que las formas se encuentran vinculadas a la evaluación de los hechos por medio de la posibilidad de ejercer control sobre los mismos . Si existe control, se puede seleccionar la perífrasis; si no existe, la forma sintética será más apropiada. La ausencia de control puede dar lugar a una posibilidad más o menos remota así como a la profecía, dos esferas donde la variación es explotada

Characteristics of ice-rafted pebbles from ODP Leg 178 holes

Pebbles (>10 mm) sampled from three drill sites on the continental rise west of the Antarctic Peninsula during Ocean Drilling Program Leg 178 were classified by shape and roundness. In addition, pebble lithology and surface texture were visually identified. To increase the pebble sample number to 331, three sites that were drilled 94 to 213 km from the continental shelf edge were integrated into the data set using magnetostratigraphy for core correlation. Pebbles were compared in three groups defined by the same stratigraphic intervals at each site: 3.1-2.2 Ma (late Pliocene), 2.2-0.76 Ma (late Pliocene-late Pleistocene), and 0.76 Ma to the Holocene. Pebble lithologies originate from sources on the Antarctic Peninsula margin. Most pebbles are metamorphic and sedimentary pebbles are rare (<6%), whereas mafic volcanic and intrusive igneous lithologies increase in abundance upsection. Pebbles from 3.1 to 0.76 Ma, plotted on sphericity-roundness diagrams, indicate original transport as basal and supraglacial/englacial debris. Pebbles are abundant and of diverse lithology. From 0.76 Ma to the present, the number of pebbles is low and their shape characteristics indicate they originated as basal debris. Observed changes in ice-rafted pebbles can be explained by growth of an ice sheet and inundation of the Antarctic Peninsula topography by ice ~0.76 Ma. Prior to this, outlet and valley glaciers transported debris at high levels within and at the base of the ice. The mass accumulation rate of sand fluctuates and includes rounded quartz grains. Ice-sheet growth may have been accompanied by overall cooling from subpolar to polar glacial regimes, which halted meltwater production and enhanced the growth of ice shelves, which consequently reduced sediment supply to icebergs.

Low current performance of the Bern medical cyclotron down to the pA range

A medical cyclotron accelerating H- ions to 18 MeV is in operation at the Bern University Hospital (Inselspital). It is the commercial IBA 18/18 cyclotron equipped with a specifically conceived 6 m long external beam line ending in a separate bunker. This feature is unique for a hospital-based facility and makes it possible to conduct routine radioisotope production for PET diagnostics in parallel with multidisciplinary research activities, among which are novel particle detectors, radiation biophysics, radioprotection, radiochemistry and radiopharmacy developments. Several of these activities, such as radiobiology experiments for example, require low current beams down to the pA range, while medical cyclotrons are designed for high current operation above 10 μA. In this paper, we present the first results on the low current performance of a PET medical cyclotron obtained by ion source, radio-frequency and main coil tuning. With this method, stable beam currents down to (1.5+/- 0.5 ) pA were obtained and measured with a high-sensitivity Faraday cup located at the end of the beam transport line.

Calculation Methodology and Fabrication Procedures for Particle Accelerator Strip-Line Kickers: Application to the CTF3 Combiner Ring Extraction Kicker and TL2 Tail Clippers

A particle accelerator is any device that, using electromagnetic fields, is able to communicate energy to charged particles (typically electrons or ionized atoms), accelerating and/or energizing them up to the required level for its purpose. The applications of particle accelerators are countless, beginning in a common TV CRT, passing through medical X-ray devices, and ending in large ion colliders utilized to find the smallest details of the matter. Among the other engineering applications, the ion implantation devices to obtain better semiconductors and materials of amazing properties are included. Materials supporting irradiation for future nuclear fusion plants are also benefited from particle accelerators. There are many devices in a particle accelerator required for its correct operation. The most important are the particle sources, the guiding, focalizing and correcting magnets, the radiofrequency accelerating cavities, the fast deflection devices, the beam diagnostic mechanisms and the particle detectors. Most of the fast particle deflection devices have been built historically by using copper coils and ferrite cores which could effectuate a relatively fast magnetic deflection, but needed large voltages and currents to counteract the high coil inductance in a response in the microseconds range. Various beam stability considerations and the new range of energies and sizes of present time accelerators and their rings require new devices featuring an improved wakefield behaviour and faster response (in the nanoseconds range). This can only be achieved by an electromagnetic deflection device based on a transmission line. The electromagnetic deflection device (strip-line kicker) produces a transverse displacement on the particle beam travelling close to the speed of light, in order to extract the particles to another experiment or to inject them into a different accelerator. The deflection is carried out by the means of two short, opposite phase pulses. The diversion of the particles is exerted by the integrated Lorentz force of the electromagnetic field travelling along the kicker. This Thesis deals with a detailed calculation, manufacturing and test methodology for strip-line kicker devices. The methodology is then applied to two real cases which are fully designed, built, tested and finally installed in the CTF3 accelerator facility at CERN (Geneva). Analytical and numerical calculations, both in 2D and 3D, are detailed starting from the basic specifications in order to obtain a conceptual design. Time domain and frequency domain calculations are developed in the process using different FDM and FEM codes. The following concepts among others are analyzed: scattering parameters, resonating high order modes, the wakefields, etc. Several contributions are presented in the calculation process dealing specifically with strip-line kicker devices fed by electromagnetic pulses. Materials and components typically used for the fabrication of these devices are analyzed in the manufacturing section. Mechanical supports and connexions of electrodes are also detailed, presenting some interesting contributions on these concepts. The electromagnetic and vacuum tests are then analyzed. These tests are required to ensure that the manufactured devices fulfil the specifications. Finally, and only from the analytical point of view, the strip-line kickers are studied together with a pulsed power supply based on solid state power switches (MOSFETs). The solid state technology applied to pulsed power supplies is introduced and several circuit topologies are modelled and simulated to obtain fast and good flat-top pulses.

Diseño de instrumentos para configurar una política industrial en España basada en los postulados de la economía evolutiva

La evidencia empírica aplicada a países de cierto tamaño y desarrollo económico, muestra que existe una relación directa y positiva entre la intensidad de la industria manufacturera, medida como porcentaje de su PIB, y ciertas variables económicas como, el crecimiento, el desempleo y la balanza exterior de bienes y servicios. En el caso de esta última, se verifica empíricamente, que los países con una proporción de actividad manufacturera inferior al 20%, tienen una marcada tendencia a presentar déficits crónicos de balanza de bienes y servicios, lo que conduce a persistentes déficits por cuenta corriente, al ser el primer déficit el principal componente del segundo. Esto trae consigo un continuado incremento del endeudamiento externo que no cesa, y que terminará en algún momento por desequilibrar el conjunto de la economía de los países con esos déficits crónicos. Las anteriores conclusiones, abren una vía de orientación de la política económica, que tiene como objetivo la promoción de la industria manufacturera de cada país. Y esto es un hecho ya en 2014. Países relevantes, como Alemania o Francia en la UE, incluso los EEUU y últimamente el Reino Unido, y por supuesto países del área asiática como Japón, Corea del Sur y China, llevan años promoviendo su industria manufacturera. Resulta significativo, que el debate ideológico sobre la bondad de la aplicación política industrial por parte de los gobiernos, frente a las teorías liberales de mantener a los poderes públicos lejos de ese tipo de actividades, haya dado paso a un modelo generalizado de corte más bien horizontal, donde los países casi sin excepciones apoyan el desarrollo de sus empresas con numerosos instrumentos, que van bastante más lejos de los habituales de I+D. Se valora por tanto, la industria manufacturera como algo vital para el equilibrio económico. Incluso la UE, defensora durante décadas de la no intervención de los diferentes Estados miembros en actividades de promoción industrial más allá del apoyo a las actividades de I+D, realiza un giro copernicano, que termina en 2012 proclamando que la industria manufacturera es vital para el equilibrio económico de la UE, que hay que promoverla, e incluso marca un objetivo, precisamente del 20%, como contribución manufacturera a su PIB. Es decir, se da por asumido que los servicios no son un sustituto indefinido de la industria y que por tanto tienen un límite, lo que se contrapone frontalmente contra la anterior creencia de que el aumento de la participación de los servicios en la economía, no solo era bueno, sino un síntoma de desarrollo. Esta premisa ya ha dejado de ser cierta para esos y otros países. En cambio, en España nada de esto sucede en las dos últimas décadas, sino que la industria manufacturera no recibe especial atención de los poderes públicos y se desliza en una pendiente de disminución de su contribución al PIB, que incluso se acelera con la crisis económica que comienza en 2007, hasta alcanzar cifras del orden del 12% del PIB en 2013. La política económica que se aplica es la de la deflación de costes, con los efectos consecuentes sobre los salarios y sobre la capacidad de la economía de generar riqueza. Se apuesta por un modelo de mano de obra barata, que recuerda al de los años 60. Como indicador relevante de esta situación, lo que exporta la industria manufacturera española, no ha ganado en contenido tecnológico en los últimos quince años. Esta situación se ve empeorada por un hecho significativo adicional, y es que casi el 40% de las ventas de la industria manufacturera española provienen de empresas de propiedad extranjera, con lo que eso supone por una parte de dependencia tecnológica del exterior como en el caso del automóvil, y de incertidumbre sobre su futuro, al estar basadas en el mantenimiento en el futuro de una mano de obra barata, que frenará que los españoles que trabajan en esas empresas, progresen económicamente. La propuesta de esta Tesis, es en cambio apostar por un modelo de crecimiento para España que tenga como uno de sus pilares el desarrollo de una industria manufacturera sólida y con cada vez mayor contenido tecnológico. Para ello, se propone un Plan de política industrial, donde se incluye la creación de actores impulsores de este plan, que deben ser del máximo nivel político. Si los diferentes gobiernos no entienden y asumen esta necesidad de apoyo a la industria a largo plazo e independiente de los cambios políticos, no será posible llevar a cabo este Plan. Para su puesta en marcha, se propone la creación o refuerzo de numerosos instrumentos de apoyo a la industria manufacturera de carácter fundamentalmente horizontal que van mucho más allá de los habituales del I+D, y que en varios casos, tienen una clara semejanza con otros existentes ya en otros países desarrollados desde hace años. La promoción de la industria manufacturera necesita nuevos instrumentos, como una financiación a largo plazo para las empresas, una promoción ordenada y eficaz de la actividad internacional de las empresas exportadoras, la mayoría de las cuales exportan productos manufacturados, una educación y formación profesional que esté alineada con estos objetivos, unos instrumentos que apoyen en especial el desarrollo la industria manufacturera, o la participación minoritaria pero significativa, del Estado en empresas españolas pertenecientes a sectores estratégicos entre otros. En resumen, esta Tesis propone una alternativa de política económica radicalmente diferente a la de dejar la industria manufacturera española a su suerte, y basar el futuro económico de España en una mano de obra barata. ABSTRACT The empirical evidence, applied to countries of certain size and economic development, shows that there exists a direct and positive relationship between industrial manufacturing activity, measured as a percentage of GDP, and certain economic variables, such as growth, unemployment and the foreign balance of trade. In the case of the latter, it is verified empirically that the countries with a percentage of manufacturing activity below 20% have a marked tendency for chronic deficits of the balance of trade, leading to persistent deficits in the current account, being that the former deficit is the main component of the latter. This brings about a continued increase in foreign debt that does not cease, and that will end at some point by disrupting the economy of the countries with these chronic deficits. The previous conclusions open the way to a new direction for economic policy, which promotes industrial manufacturing in each country. This is already a fact in 2014. Relevant countries, such as Germany or France in the EU, even the US and ultimately the UK, and of course countries of East Asia such as Japan, South Korea and China, have been promoting their industrial manufacturing for years. It becomes significant that the ideological debate about the goodwill of the application of industrial policy by governments, against liberal theories that maintain public powers far from these kinds of activities, has taken a step towards a horizontal-cut generalized model, where countries, with almost no exception, rely on various instruments to develop their companies that go much further than the usual R&D. Industrial manufacture is therefore valued as vital for economic stability. Even the EU, proponent for decades of non-intervention policy that goes beyond R&D, has gone full circle, ending in 2012 by proclaiming that industrial manufacture is vital for the economic stability of the EU, that it must be promoted. They even mark precisely 20% as an objective for manufacturing as a percentage of GDP. In other words, it is a given that services are not an indefinite substitute for industry, and that therefore it has a limit as such. This rejects the notion that the increase in services at the cost of manufacture is not only healthy, but is also a symptom of development. This premise is no longer true for these and other countries. On the other hand, none of this happens in Spain, where industrial manufacture receives no special attention from the public authorities, and it slides on a downward slope of percentage contribution to GDP, which accelerates the economic crisis that begins in 2007, until manufacture reaches values of around 12% of GDP in 2013. The economic policy applied is that of cost deflation, with consequential effects on wages and the capacity of the economy to generate wealth. A model is proposed for cheaper labor, akin to that of the 1960s. As a relevant indicator of this situation, manufacturing exports from Spain have not grown technologically in the last 15 years. The situation is made worse by another significant fact: almost 40% of sales of the manufacturing industry originate from companies of foreign origin, which supposes on one hand a technological dependence on foreign countries, such as in the case of the automotive industry, and on the other hand uncertainty in its future, being that they are based on maintaining cheap labor in the future, which will slow economic progress of Spaniards working in these companies. The proposition of this Thesis is to bet on a growth model for Spain that has as one of its pillars the development of a solid manufacturing industry, with increasing technological content. For this, an industrial policy plan is proposed, which includes the creation of driving agents for this plan, which must be of maximum political level. If the various governments don’t understand and assume this necessity for support of industry in the long term, independent of political change, this plan will not be accomplished. To start it, the creation or reinforcement of numerous instruments to promote the manufacturing activities are proposed, with a fundamentally horizontal nature that goes far beyond the usual R&D, and that, in several cases, have a clear similarity with others existing in other countries, having been developed for years. The promotion of the manufacturing industry needs new instruments, such as the long-term financing of companies, an orderly and efficient promotion of international activity of exporting companies, the most of which export manufactured goods, education and professional training which is in tune with these objectives, some instruments which support in particular the development of the manufacturing industry, or the minor yet significant participation of the State in Spanish companies belonging to strategic sectors, among others. In summary, this Thesis proposes an different alternative to the economic policy of leaving the manufacturing industry of Spain to its chances, and to base the economic future of Spain on a cheaper labor force.

Atomistic modeling of Ge damage accumulation, amorphization and solid phase epitaxial regrowth

En los últimos años, el Ge ha ganado de nuevo atención con la finalidad de ser integrado en el seno de las existentes tecnologías de microelectrónica. Aunque no se le considera como un canddato capaz de reemplazar completamente al Si en el futuro próximo, probalemente servirá como un excelente complemento para aumentar las propiedades eléctricas en dispositivos futuros, especialmente debido a su alta movilidad de portadores. Esta integración requiere de un avance significativo del estado del arte en los procesos de fabricado. Técnicas de simulación, como los algoritmos de Monte Carlo cinético (KMC), proporcionan un ambiente atractivo para llevar a cabo investigación y desarrollo en este campo, especialmente en términos de costes en tiempo y financiación. En este estudio se han usado, por primera vez, técnicas de KMC con el fin entender el procesado “front-end” de Ge en su fabricación, específicamente la acumulación de dañado y amorfización producidas por implantación iónica y el crecimiento epitaxial en fase sólida (SPER) de las capas amorfizadas. Primero, simulaciones de aproximación de clisiones binarias (BCA) son usadas para calcular el dañado causado por cada ión. La evolución de este dañado en el tiempo se simula usando KMC sin red, o de objetos (OKMC) en el que sólamente se consideran los defectos. El SPER se simula a través de una aproximación KMC de red (LKMC), siendo capaz de seguir la evolución de los átomos de la red que forman la intercara amorfo/cristalina. Con el modelo de amorfización desarrollado a lo largo de este trabajo, implementado en un simulador multi-material, se pueden simular todos estos procesos. Ha sido posible entender la acumulación de dañado, desde la generación de defectos puntuales hasta la formación completa de capas amorfas. Esta acumulación ocurre en tres regímenes bien diferenciados, empezando con un ritmo lento de formación de regiones de dañado, seguido por una rápida relajación local de ciertas áreas en la fase amorfa donde ambas fases, amorfa y cristalina, coexisten, para terminar en la amorfización completa de capas extensas, donde satura el ritmo de acumulación. Dicha transición ocurre cuando la concentración de dañado supera cierto valor límite, el cual es independiente de las condiciones de implantación. Cuando se implantan los iones a temperaturas relativamente altas, el recocido dinámico cura el dañado previamente introducido y se establece una competición entre la generación de dañado y su disolución. Estos efectos se vuelven especialmente importantes para iones ligeros, como el B, el cual crea dañado más diluido, pequeño y distribuido de manera diferente que el causado por la implantación de iones más pesados, como el Ge. Esta descripción reproduce satisfactoriamente la cantidad de dañado y la extensión de las capas amorfas causadas por implantación iónica reportadas en la bibliografía. La velocidad de recristalización de la muestra previamente amorfizada depende fuertemente de la orientación del sustrato. El modelo LKMC presentado ha sido capaz de explicar estas diferencias entre orientaciones a través de un simple modelo, dominado por una única energía de activación y diferentes prefactores en las frecuencias de SPER dependiendo de las configuraciones de vecinos de los átomos que recristalizan. La formación de maclas aparece como una consecuencia de esta descripción, y es predominante en sustratos crecidos en la orientación (111)Ge. Este modelo es capaz de reproducir resultados experimentales para diferentes orientaciones, temperaturas y tiempos de evolución de la intercara amorfo/cristalina reportados por diferentes autores. Las parametrizaciones preliminares realizadas de los tensores de activación de tensiones son también capaces de proveer una buena correlación entre las simulaciones y los resultados experimentales de velocidad de SPER a diferentes temperaturas bajo una presión hidrostática aplicada. Los estudios presentados en esta tesis han ayudado a alcanzar un mejor entendimiento de los mecanismos de producción de dañado, su evolución, amorfización y SPER para Ge, además de servir como una útil herramienta para continuar el trabajo en este campo. In the recent years, Ge has regained attention to be integrated into existing microelectronic technologies. Even though it is not thought to be a feasible full replacement to Si in the near future, it will likely serve as an excellent complement to enhance electrical properties in future devices, specially due to its high carrier mobilities. This integration requires a significant upgrade of the state-of-the-art of regular manufacturing processes. Simulation techniques, such as kinetic Monte Carlo (KMC) algorithms, provide an appealing environment to research and innovation in the field, specially in terms of time and funding costs. In the present study, KMC techniques are used, for the first time, to understand Ge front-end processing, specifically damage accumulation and amorphization produced by ion implantation and Solid Phase Epitaxial Regrowth (SPER) of the amorphized layers. First, Binary Collision Approximation (BCA) simulations are used to calculate the damage caused by every ion. The evolution of this damage over time is simulated using non-lattice, or Object, KMC (OKMC) in which only defects are considered. SPER is simulated through a Lattice KMC (LKMC) approach, being able to follow the evolution of the lattice atoms forming the amorphous/crystalline interface. With the amorphization model developed in this work, implemented into a multi-material process simulator, all these processes can be simulated. It has been possible to understand damage accumulation, from point defect generation up to full amorphous layers formation. This accumulation occurs in three differentiated regimes, starting at a slow formation rate of the damage regions, followed by a fast local relaxation of areas into the amorphous phase where both crystalline and amorphous phases coexist, ending in full amorphization of extended layers, where the accumulation rate saturates. This transition occurs when the damage concentration overcomes a certain threshold value, which is independent of the implantation conditions. When implanting ions at relatively high temperatures, dynamic annealing takes place, healing the previously induced damage and establishing a competition between damage generation and its dissolution. These effects become specially important for light ions, as B, for which the created damage is more diluted, smaller and differently distributed than that caused by implanting heavier ions, as Ge. This description successfully reproduces damage quantity and extension of amorphous layers caused by means of ion implantation reported in the literature. Recrystallization velocity of the previously amorphized sample strongly depends on the substrate orientation. The presented LKMC model has been able to explain these differences between orientations through a simple model, dominated by one only activation energy and different prefactors for the SPER rates depending on the neighboring configuration of the recrystallizing atoms. Twin defects formation appears as a consequence of this description, and are predominant for (111)Ge oriented grown substrates. This model is able to reproduce experimental results for different orientations, temperatures and times of evolution of the amorphous/crystalline interface reported by different authors. Preliminary parameterizations for the activation strain tensors are able to also provide a good match between simulations and reported experimental results for SPER velocities at different temperatures under the appliance of hydrostatic pressure. The studies presented in this thesis have helped to achieve a greater understanding of damage generation, evolution, amorphization and SPER mechanisms in Ge, and also provide a useful tool to continue research in this field.

Evidence for a hypothalamothalamocortical circuit mediating pheromonal influences on eye and head movements.

A method for simultaneous iontophoretic injections of the anterograde tracer Phaseolus vulgaris leukoagglutinin and the retrograde tracer fluorogold was used to characterize in the rat a hypothalamothalamocortical pathway ending in a region thought to regulate attentional mechanisms by way of eye and head movements. The relevant medial hypothalamic nuclei receive pheromonal information from the amygdala and project to specific parts of the thalamic nucleus reuniens and anteromedial nucleus, which then project to a specific lateral part of the retrosplenial area (or medial visual cortex). This cortical area receives a convergent input from the lateral posterior thalamic nucleus and projects to the superior colliculus. Bidirectional connections with the hippocampal formation suggest that activity in this circuit is modified by previous experience. Striking parallels with basal ganglia circuitry are noted.

Discovering a history : the school of art at the University of Denver

Discovering a History: The School of Art at the University of Denver explores the early history of art education in Denver, and the significance of visual art education at the University of Denver within that history beginning in 1865, when the first classes in art were offered, and ending in 1929 when the University acquired the Chappell School of Art—an independent art school—and appointed Vance Kirkland as director. This paper also explores competing art institutions, which at times posed great hindrances to the University. Further, it illustrates how the artists who taught at the University of Denver School of Art, such as Ida De Steiguer, Preston Powers, Emma Richardson Cherry, and Henry Read, were amongst the great contributors to Denver’s burgeoning artistic culture.

Half of a yellow sun

A beautiful sweeping story of two sisters caught up in the events of the Nigerian civil war, ending in chilling violence which shocked the entire world.

Recursos hídricos superficiais vs subterrâneos na Várzea da Nazaré : implicações na qualidade da água

Tese de doutoramento, Geologia (Hidrogeologia), Universidade de Lisboa, Faculdade de Ciências, 2016

Accelerator and detector physics at the Bern medical cyclotron and its beam transport line.

The cyclotron laboratory for radioisotope production and multi-disciplinary research at the Bern University Hospital (Inselspital) is based on an 18-MeV proton accelerator, equipped with a specifically conceived 6-m long external beam line, ending in a separate bunker. This facility allows performing daily positron emission tomography (PET) radioisotope production and research activities running in parallel. Some of the latest developments on accelerator and detector physics are reported. They encompass novel detectors for beam monitoring and studies of low current beams.

Annual report of the Insurance Commissioner of the state of Maryland.

Description based on: 19th (1890).

English philology pamphlets

A collection of miscellaneous pamphlets.

Court of Customs and Patent Appeals.

Vols. issued in 2 pts., each having also a separate title: Customs cases adjudged ...; Patent cases adjudged ...