Contribution à l’étude des étalements dans les argiles sensibles de la mer de Champlain- Étude des étalements de Casselman (1971) et de Saint-Luc-de-Vincennes (1986)

Ce mémoire décrit, en premier lieu, l’analyse géotechnique et géomorphologique du glissement de 1971 à Casselman, Ontario. Les caractéristiques morphologiques identifiées à l’intérieur de la cicatrice confirment qu’il s’agit d’un étalement. Le sol impliqué est une argile sensible de la mer de Champlain, normalement à légèrement surconsolidée (OCR entre 1,0 et 1,2) dont les indices de liquidité varient entre 1,0 et 2,0. La résistance au cisaillement intacte mesurée au scissomètre de chantier varie entre 50 kPa et 87 kPa. L’argile adopte un comportement anti-écrouissage (perte de 40 % de la résistance en pic) lorsque soumise à des essais de cisaillement non-drainé. Une surface de rupture quasi-horizontale à deux niveaux principaux a été identifiée à partir des sondages au piézocône réalisés à l’intérieur de la cicatrice. Les coefficients de sécurité élevés obtenus à partir de méthodes à l’équilibre limite démontrent que la rétrogression ne peut être expliquée par des méthodes d’analyses conventionnelles. La deuxième partie du mémoire présente l’application numérique du principe de rupture progressive aux étalements de Casselman (1971) et de Saint-Luc-de-Vincennes (1986). Une étude paramétrique a été réalisée afin d’évaluer l’influence de la fragilité du comportement après la résistance en pic du sol, reliée dans l’étude à une épaisseur de bande de cisaillement, ainsi que de la résistance à grande déformation, sur l’initiation et la rétrogression résultant du processus de rupture progressive. Les résultats démontrent que la résistance à grande déformation a très peu d’influence sur l’initiation du processus de rupture progressive, qui est principalement influencé par la fragilité du comportement du sol. Il a aussi été observé que la rétrogression était majoritairement influencée par la résistance à grande déformation.

Microstructural and magnetic properties of Nd-Fe-B alloys processed by equal-channel angular pressing

Equal-channel angular pressing (ECAP) is a well-established thermo-mechanical processing technique. This technique allows virtually unlimited strain and manipulation of texture by processing route, while the cross-section of the sample remains unchanged during processing. In order to clarify the effectiveness of ECAP on preparing anisotropic permanent magnets, the microstructure and magnetic properties of a melt-spun Nd13.5Fe73.8Co6.7B5.6Ga0.4 alloy processed at 773-K for 300-s by ECAP were investigated. Macrotexture analysis carried out for the exit channel of ECAP shows that the basal plane of the tetragonal Nd2Fe14B crystal aligns parallel to the shear band, i.e., the c-axis texture formation normal to the shear band induced by the ECAP process. Due to this texture formation, the technical magnetization behaviour becomes anisotropic, and the remanent magnetization is clearly enhanced along the direction perpendicular to the shear band. This anisotropic microstructure is realized at a relatively low processing temperature of 773-K, well below the melting point of the Nd-rich intergranular phase. As a consequence of this lower processing temperature, the nanostructure of the melt-spun alloy remains approximately 20 to 30-nm, considerably smaller than the typical grain size obtained after conventional die-upsetting. Our study demonstrates that equal-channel angular pressing has a potential for realising anisotropic nanostructured magnets.

Strain localisation patterns under equal-channel angular pressing

Instabilities of plastic flow in the form of localised shear bands were experimentally observed to result from equal-channel angular pressing (ECAP) of magnesium alloy AZ31. The appearance of shear bands and their spacing were dependent on velocity of the pressing and applied back-pressure. A generic gradient plasticity theory involving second-order strain gradient terms in a constitutive model was applied to the case of AZ31 deformed by ECAP. Linear stability analysis was applied to the set of equations describing the deformation behaviour in the process zone idealised as a planar shear zone. A full analytical solution providing a dispersion relation between the rate of growth of a perturbation and the wave number was obtained. It was shown that the pattern of incipient localised shear bands exhibits a spectrum of characteristic lengths corresponding to admissible wave numbers. The interval of the spectrum of wave numbers of viable, i.e. growing, perturbations predicted by linear stability analysis was shown to be in good agreement with the experimentally observed spectrum. The effect of back-pressure applied during ECAP was also considered. The predicted displacement of the shear band spectrum towards lower wave numbers, shown to be a result of the decreased shear strain rate in the shear zone, was consistent with the experimentally observed increase of the band spacing with increased back-pressure. A good predictive capability of the general modelling frame used in conjunction with linear stability analysis was thus demonstrated in the instance of the particular alloy system and the specific processing conditions considered.

SHEAR-DEFORMATION-POTENTIAL CONSTANT OF THE CONDUCTION-BAND MINIMA OF SI - EXPERIMENTAL-DETERMINATION BY THE DEEP-LEVEL CAPACITANCE TRANSIENT METHOD

The shear-deformation-potential constant XI-u of the conduction-band minima of Si has been measured by a method which we called deep-level capacitance transient under uniaxial stress. The uniaxial-stress (F) dependence of the electron emission rate e(n) from deep levels to the split conduction-band minima of Si has been analyzed. Theoretical curves are in good agreement with experimental data for the S0 and S+ deep levels in Si. The values of XI-u obtained by the method are 11.1 +/- 0.3 eV at 148.9 K and 11.3 +/- 0.3 eV at 223.6 K. The analysis and the XI-u values obtained are also valuable for symmetry determination of deep electron traps in Si.

M-L band x-rays (3-3.5 KeV) from palladium coated targets for isochoric radiative heating of thin foil samples

We describe experiments designed to produce a bright M-L band x-ray source in the 3-3.5 keV region. Palladium targets irradiated with a 10(15) W cm(-2) laser pulse have previously been shown to convert up to similar to 2% of the laser energy into M-L band x-rays with similar pulse duration to that of the incident laser. This x-ray emission is further characterized here, including pulse duration and source size measurements, and a higher conversion efficiency than previously achieved is demonstrated (similar to 4%) using more energetic and longer duration laser pulses (200 ps). The emission near the aluminium K-edge (1.465-1.550 keV) is also reported for similar conditions, along with the successful suppression of such lower band x-rays using a CH coating on the rear side of the target. The possibility of using the source to radiatively heat a thin aluminium foil sample to uniform warm dense matter conditions is discussed.

Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects

The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.

Nonlocal continuum mechanics formulation for axial, flexural, shear and contraction coupled wave propagation in single walled carbon nanotubes

This paper presents the effect of nonlocal scaling parameter on the coupled i.e., axial, flexural, shear and contraction, wave propagation in single-walled carbon nanotubes (SWCNTs). The axial and transverse motion of SWCNT is modeled based on first order shear deformation theory (FSDT) and thickness contraction. The governing equations are derived based on nonlocal constitutive relations and the wave dispersion analysis is also carried out. The studies shows that the nonlocal scale parameter introduces certain band gap region in all wave modes where no wave propagation occurs. This is manifested in the wavenumber plots as the region where the wavenumber tends to infinite or wave speed tends to zero. The frequency at which this phenomenon occurs is called the escape frequency. Explicit expressions are derived for cut-off and escape frequencies of all waves in SWCNT. It is also shown that the cut-off frequencies of shear and contraction mode are independent of the nonlocal scale parameter. The results provided in this article are new and are useful guidance for the study and design of the next generation of nanodevices that make use of the coupled wave propagation properties of single-walled carbon nanotubes.

Cumulus clouds and convective boundary layers: a tropical perspective on two turbulent shear flows

This paper is a review prepared for the second Marseille Colloquium on the mechanics of turbulence, held in 2011, 50 years after the first. The review covers recent developments in our understanding of the large-scale dynamics of cumulus cloud flows and of the atmospheric boundary layer in the low-wind convective regime that is often encountered in the tropics. It has recently been shown that a variety of cumulus cloud forms and life cycles can be experimentally realized in the laboratory, with the transient diabatic plume taken as the flow model for a cumulus cloud. The plume is subjected to diabatic heating scaled to be dynamically similar to heat release from phase changes in clouds. The experiments are complemented by exact numerical solutions of the Navier-Stokes-Boussinesq equations for plumes with scaled off-source heating. The results show that the Taylor entrainment coefficient first increases with heating, reaches a positive maximum and then drops rapidly to zero or even negative values. This reduction in entrainment is a consequence of structural changes in the flow, smoothing out the convoluted boundaries in the non-diabatic plume, including the tongues engulfing the ambient flow. This is accompanied by a greater degree of mixedness in the core flow because of lower dilution by the ambient fluid. The cloud forms generated depend strongly on the history of the diabatic heating profile in the vertical direction. The striking effects of heating on the flow are attributable to the operation of the baroclinic torque due to the temperature field. The mean baroclinic torque is shown to peak around a quasi-cylindrical sheet situated midway between the axis of the flow and the edges. This torque is shear-enhancing and folds down the engulfment tongues. The increase in mixedness can be traced to an explosive growth in the enstrophy, triggered by a strong fluctuating baroclinic torque that acts as a source, especially at the higher wave numbers, thus enhancing the mixedness. In convective boundary layers field measurements show that, under conditions prevailing in the tropics, the eddy fluxes of momentum and energy do not follow the Monin-Obukhov similarity. Instead, the eddy momentum flux is found to be linear in the wind speed at low winds; and the eddy heat flux is, to a first approximation, governed by free convection laws, with wind acting as a small perturbation on a regime of free convection. A new boundary layer code, based on heat flux scaling rather than wall-stress scaling, shows promising improvements in predictive skills of a general circulation model.

Improved tuning of the extended concentric tube resonator for wide-band transmission loss

Transmission loss (TL) of a simple expansion chamber (SEC) consists of periodic domes with sharp troughs. This limits practical application of the SEC in the variable-speed automobile exhaust systems. Three-fourths of the troughs of the SEC can be lifted by appropriate tuning of the extended inlet/outlet lengths. However, such mufflers suffer from high back pressure and generation of aerodynamic noise due to free shear layers at the area discontinuities. Therefore, a perforate bridge is made between the extended inlet and outlet. It is shown that the TL curve of a concentric tube resonator (CTR) can also be lifted in a similar way by proper tuning of the extended unperforated lengths. Differential lengths have to be used to correct the inlet/outlet lengths in order to account for the perforate inertance. The resonance peak frequencies calculated by means of the 1-D analysis are compared with those of the 3-D FEM, and appropriate differential lengths are calculated. It is shown how different geometric characteristics of the muffler and mean flow affect the differential lengths. A general correlation is obtained for the differential lengths by considering seven relevant geometric and environmental parameters in a comprehensive parametric study. The resulting expressions would help in design of extended-tube CTR for wide-band TL. (C) 2014 Institute of Noise Control Engineering.

Microstructure of shear localization in low-carbon ferrite pearlite steel

A study has been made of the microstructure of the thermally assisted band in a low carbon ferrite-pearlite steel, resulting from high speed torsional testing with an average strain rate of about 1500 s−1. Metallographic examination showed that there are several fine shear bands distributed over a deformed region (the gauge length of the specimen). The width of these bands is estimated to be of the order of magnitude of 50 μm, and the spacing between them is roughly about 100 μm. Detailed scanning electron microscopy studies indicate that damage of the microstructure within the band is very apparent, as evidenced by microcrack initiation and coalescence along the shear deformation band. However, there is no evidence that the material in the band had become microcrystalline or non-crystalline.

The shear mode of multilayer graphene

The quest for materials capable of realizing the next generation of electronic and photonic devices continues to fuel research on the electronic, optical and vibrational properties of graphene. Few-layer graphene (FLG) flakes with less than ten layers each show a distinctive band structure. Thus, there is an increasing interest in the physics and applications of FLGs. Raman spectroscopy is one of the most useful and versatile tools to probe graphene samples. Here, we uncover the interlayer shear mode of FLGs, ranging from bilayer graphene (BLG) to bulk graphite, and suggest that the corresponding Raman peak measures the interlayer coupling. This peak scales from ∼43cm -1 in bulk graphite to ∼31cm -1 in BLG. Its low energy makes it sensitive to near-Dirac point quasiparticles. Similar shear modes are expected in all layered materials, providing a direct probe of interlayer interactions. © 2012 Macmillan Publishers Limited. All rights reserved.

Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition

Based on the results of the temperature-dependent photoluminescence (PL) measurements, the broad PL emission in the phase-separated GaNP alloys with P compositions of 0.03, 0.07, and 0.15 has investigated. The broad PL peaks at 2.18, 2.12 and 1.83 eV are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. With the increasing P composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80-160meV) of the PL peak energy and the trend of the red shift is strengthened. No PL emission peak is observed from the GaN-rich GaNP region, suggesting that the photogenerated carriers in the GaN-rich GaNP region may recombine with each other via non-radiation transitions.

Band structure parameters of zinc-blende GaN, AlN and their alloys Ga1-xAlxN

The electronic properties of wide energy gap zinc-blende structure GaN, AlN and their alloys Ga1-xAlxN are investigated using the empirical pseudopotential method. Electron and hole Effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Gamma and those of the conduction band at Gamma and X are obtained. The energies of Gamma, X, L conduction valleys of Ga1-xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices in the blue light range.

Shear-induced spiral-like morphology of a main-chain liquid crystalline poly(aryl ether ketone)

The shear-induced spiral-like morphology of a main-chain thermotropic liquid crystalline poly(aryl ether ketone) is observed and characterized by means of polarizing light microscopy, atomic force microscopy, transmission electron microscopy and electron diffraction techniques. The spiral-like texture is formed during shearing in the temperature range of liquid crystalline to isotropic transition (335-340 degreesC), and dispersed discontinuously in the mosaic matrix. Electron diffraction results indicate that the spiral exhibits orthorhombic lateral packing of the crystals and homeotropic alignment of the molecules. The spiral formation process and possible affecting factors are discussed.