Electronic structure of Mn-doped ZnO quantum wires: A mean-field theory study

Based on the effective-mass model and the mean-field approximation, we investigate the energy levels of the electron and hole states of the Mn-doped ZnO quantum wires (x=0.0018) in the presence of the external magnetic field. It is found that either twofold degenerated electron or fourfold degenerated hole states split in the field. The splitting energy is about 100 times larger than those of undoped cases. There is a dark exciton effect when the radius R is smaller than 16.6 nm, and it is independent of the effective doped Mn concentration. The lowest state transitions split into six Zeeman components in the magnetic field, four sigma(+/-) and two pi polarized Zeeman components, their splittings depend on the Mn-doped concentration, and the order of pi and sigma(+/-) polarized Zeeman components is reversed for thin quantum wires (R < 2.3 nm) due to the quantum confinement effect.

Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering

Wurtzite ZnO/MgO superlattices were successfully grown on Si (001) substrates at 750 degrees C using radio-frequency reactive magnetron sputtering method. X-ray reflection and diffraction, electronic probe and photoluminescence analysis were used to characterize the multiple quantum wells (MQWs). The results showed the periodic layer thickness of the MQWs to be 1.85 to 22.3 nm. The blueshift induced by quantum confinement was observed. Least square fitting method was used to deduce the zero phonon energy of the exciton from the room-temperature photoluminescence. It was found that the MgO barrier layers has a much larger offset than ZnMgO. The fluctuation of periodic layer thickness of the MQWs was suggested to be a possible reason causing the photoluminescence spectrum broadening.

Giant Zeeman splitting in manganese-doped ZnSe quantum spheres: Eight-band effective-mass calculations

We deduce the eight-band effective-mass Hamiltonian model for a manganese-doped ZnSe quantum sphere in the presence of the magnetic field, including the interaction between the conduction and valence bands, the spin-orbit coupling within the valence bands, the intrinsic spin Zeeman splitting, and the sp-d exchange interaction between the carriers and magnetic ion in the mean-field approximation. The size dependence of the electron and hole energy levels as well as the giant Zeeman splitting energies are studied theoretically. We find that the hole giant Zeeman splitting energies decrease with the increasing radius, smaller than that in the bulk material, and are different for different J(z) states, which are caused by the quantum confinement effect. Because the quantum sphere restrains the excited Landau states and exciton states, in the experiments we can observe directly the Zeeman splitting of basic states. At low magnetic field, the total Zeeman splitting energy increases linearly with the increasing magnetic field and saturates at modest field which is in agreement with recent experimental results. Comparing to the undoped case, the Zeeman splitting energy is 445 times larger which provides us with wide freedom to tailor the electronic structure of DMS nanocrystals for technological applications.

Electronic structure and electron g factors of HgTe quantum dots

The electronic structure and electron g factors of HgTe quantum dots are investigated, in the framework of the eight-band effective-mass approximation. It is found that the electron states of quantum spheres have aspheric properties due to the interaction between the conduction band and valence band. The highest hole states are S (l = 0) states, when the radius is smaller than 9.4 nm. the same as the lowest electron states. Thus strong luminescence from H-Te quantum dots with radius smaller than 9.4 nm has been observed (Rogach et al 2001 Phys. Statits Solidi b 224 153). The bandgap of H-Te quantum spheres is calculated and compared with earlier experimental results (Harrison et al 2000 Pure Appl. Chem. 72 295). Due to the quantum confinement effect, the bandgap of the small HgTe quantum spheres is positive. The electron g factors of HgTe quantum spheres decrease with increasing radius and are nearly 2 when the radius is very small. The electron g factors of HgTe quantum ellipsoids are also investigated. We found that as some of the three dimensions increase, the electron g factors decrease. The more the dimensions increase, the more the g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimension.

Impact of polarization on quasi-two-dimensional exciton and barrier-width dependence of the exciton associated transition in wurtzite III-V nitride quantum wells

Excitonic states in AlxGa1-xN/GaN quantum wells (QWs) are studied within the framework of effective-mass theory. Spontaneous and piezoelectric polarizations are included and their impact on the excitonic states and optical properties are studied. We witnessed a significant blue shift in transition energy when the barrier width decreases and we attributed this to the redistribution of the built-in electric field between well layers and barrier layers. For the exciton the binding energies, we found in narrow QWs that there exists a critical value for barrier width, which demarcates the borderline for quantum confinement effect and the quantum confined Stark effect. Exciton and free carrier radiative lifetimes are estimated by simple argumentation. The calculated results suggest that there are efficient non-radiative mechanisms in narrow barrier QWs. (C) 2002 Elsevier Science Ltd. All rights reserved.

Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A

Self-organized In0.55Al0.45As/Al0.50Ga0.50As quantum dots are grown by the Stranski-Krastanow growth mode using molecular beam epitaxy on the GaAs(311)A substrate. The optical properties of type-II InAlAs/AlGaAs quantum dots have been demonstrated by the excitation power and temperature dependence of photoluminescence spectra. A simple model accounting for the size-dependent band gap of quantum dots is given to qualitatively understand the formation of type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots driven by the quantum-confinement-induced Gamma --> X transition. The results provide new insights into the band structure of InAlAs/AlGaAs quantum dots. (C) 2000 American Institute of Physics. [S0003-6951(00)00725-7].

Linear polarization of photoluminescence in quantum wires

The linear character of the polarization of the luminescence in porous Si is studied experimentally, and the corresponding luminescence characteristics in quantum wires are studied theoretically using a quantum cylindrical model in the framework of the effective-mass theory. From the experimental and theoretical results it is concluded that there is a stronger linear polarization parallel to the wire direction than there is perpendicular to the wire, and that it is connected with the valence band structure in quantum confinement in two directions. The theoretical photoluminescence spectra of the parallel and perpendicular polarization directions, and the degree of polarization as functions of the radius of the wire and the temperature are obtained for In0.53Ga0.47As quantum wires and porous silicon. From the theory, we demonstrated that the degree of polarization decreases with increasing temperature and radius, and that this effect is more apparent for porous Si. The theoretical results are in good agreement with the experimental results for the InGaAs quantum wires, and in qualitative agreement with those for the porous silicon.

Effect of carrier relaxation and emission on photoluminescence of InAs quantum dots

　

Waveguide QED: Many-body bound-state effects in coherent and Fock-state scattering from a two-level system

Strong coupling between a two-level system (TLS) and bosonic modes produces dramatic quantum optics effects. We consider a one-dimensional continuum of bosons coupled to a single localized TLS, a system which may be realized in a variety of plasmonic, photonic, or electronic contexts. We present the exact many-body scattering eigenstate obtained by imposing open boundary conditions. Multiphoton bound states appear in the scattering of two or more photons due to the coupling between the photons and the TLS. Such bound states are shown to have a large effect on scattering of both Fock- and coherent-state wave packets, especially in the intermediate coupling-strength regime. We compare the statistics of the transmitted light with a coherent state having the same mean photon number: as the interaction strength increases, the one-photon probability is suppressed rapidly, and the two- and three-photon probabilities are greatly enhanced due to the many-body bound states. This results in non-Poissonian light. © 2010 The American Physical Society.

Lanthanide oxide nanotubes and nanorods: synthesis, processing, luminescence and catalytic properties

Esta tese relata estudos de síntese, caracterização da estrutura e das propriedades de fotoluminescência e aplicações de nanotubos e nanobastonetes de óxidos de lantanídeos em pontas para microscopia de força atómica, catálise heterogénea e compósitos de base polimérica. Há um interesse crescente em compreender como o confinamento quântico decorrente da redução do tamanho de partícula pode influenciar a eficiência da luminescência, a dinâmica dos estados excitados, a transferência de energia e os efeitos de termalização de nanoluminóforos. Em nanocristais dopados com lantanídeos (Ln3+), e apesar da localização dos estados 4f, ocorrem efeitos de confinamento quântico via interacção com os modos vibracionais da rede. Em particular, a termalização anómala, descrita para uma variedade de nanocristais dopados com Ln3+, tem sido atribuída à ausência de modos vibracionais de menor frequência. Este nanoconfinamento pode ter impacto na dinâmica da luminescência, bem como na transferência de energia mediada por modos vibracionais e processos de upconversion. Nesta tese, relata-se o estudo deste efeito em nanotubos de Gd2O3:Eu3+. A influência de parâmetros como a concentração de európio e as condições de calcinação também foi investigada. Algumas aplicações destes óxidos de lantanídeos também foram exploradas, nomeadamente a modificação de pontas usadas em microscopia de força atómica com nanobastonetes de Gd2O3:Eu3+, lograda através de dielectroforese, técnica que não degrada a emissão de luz (rendimento quântico 0.47). As pontas modificadas são estáveis sob condições de trabalho, podendo ser aplicadas, por exemplo, em microscopia óptica de varrimento de campo próximo (SNOM). A oxidação em fase líquida do etilbenzendo foi investigada usando como catalisador nanotubos de CeO2, em presença dos oxidantes hidroperóxido de t-butilo e H2O2, e do solvente acetonitrilo, e temperaturas entre 55 e 105 ºC. Nanobastonetes de Gd2O3:Eu3+ recobertos com sílica foram preparados pelo método sol-gel. Esta cobertura resultou num aumento, quer do rendimento quântico de emissão, de 0.51 para 0.86 (excitação a 255 nm), quer dos tempos de vida,de 1.43 para 1.80 ms (excitação a 394.4 nm). A superfície dos nanotubos cobertos com sílica foi modificada com o agente de acoplamento metacrilato de 3-(trimetoxissilil)propilo que permitiu a preparação de compósitos através da subsequente polimerização in-situ do estireno por técnicas de miniemulsão e solução. ABSTRACT: This thesis reports on the synthesis, characterisation of the structure and photoluminescence properties, and applications of nanotubes and nanorods of lanthanides oxides in atomic force microscopy tips, heterogeneous catalysis and polymer-base composites. There is a growing interest in understanding how size-dependent quantum confinement affects the photoluminescence efficiency, excited-state dynamics, energy-transfer and thermalisation phenomena in nanophosphors. For lanthanide (Ln3+)-doped nanocrystals, and despite the localisation of the 4f states, confinement effects are induced mostly via electron-phonon interactions. In particular, the anomalous thermalisation reported for a handful of Ln3+-doped nanocrystals has been rationalised by the absence of lowfrequency phonon modes. This nanoconfinement may further impact on the Ln3+ luminescence dynamics, such as phonon-assisted energy transfer or upconversion processes. Here, this effect is investigated in Gd2O3:Eu3+ nanotubes. The influence of parameters such as europium concentration and calcination procedure is also studied. Some applications of these lanthanides oxides have been explored, for instance the modification of atomic force microscopy tips with photoluminescent Gd2O3:Eu3+ nanorods, using dielectrophoresis, a technique which preserves the red emission of the nanorods (quantum yield 0.47). The modified tips are stable under working conditions and may find applications in scanning near-field optical microscopy. The liquid-phase oxidation of ethylbenzene over CeO2 nanotubes has been investigated, using tert-butyl-hydroperoxide and H2O2 as the oxidising agents, and acetonitrile as the solvent, in the range 55-105 ºC. Gd2O3:Eu3+ nanorods have been coated with silica via a sol-gel approach. The silica coating increases both, the Eu3+ absolute emission quantum yields from 0.51 to 0.86 (255 nm excitation), and decay times from 1.43 to 1.80 ms (394.4 nm excitation). The silica coating was modified with 3- (trimethoxysilyl) propyl methacrylate and, subsequently, composites have been prepared by in-situ radical polymerisation of styrene via miniemulsion and solution routes.

Piezoresistive cantilevers with an integrated bimorph actuator

Scanning Probe Microscopy (SPM) has become of fundamental importance for research in area of micro and nano-technology. The continuous progress in these fields requires ultra sensitive measurements at high speed. The imaging speed limitation of the conventional Tapping Mode SPM is due to the actuation time constant of piezotube feedback loop that keeps the tapping amplitude constant. In order to avoid this limit a deflection sensor and an actuator have to be integrated into the cantilever. In this work has been demonstrated the possibility of realisation of piezoresistive cantilever with an embedded actuator. Piezoresistive detection provides a good alternative to the usual optical laser beam deflection technique. In frames of this thesis has been investigated and modelled the piezoresistive effect in bulk silicon (3D case) for both n- and p-type silicon. Moving towards ultra-sensitive measurements it is necessary to realize ultra-thin piezoresistors, which are well localized to the surface, where the stress magnitude is maximal. New physical effects such as quantum confinement which arise due to the scaling of the piezoresistor thickness was taken into account in order to model the piezoresistive effect and its modification in case of ultra-thin piezoresistor (2D case). The two-dimension character of the electron gas in n-type piezoresistors lead up to decreasing of the piezoresistive coefficients with increasing the degree of electron localisation. Moreover for p-type piezoresistors the predicted values of the piezoresistive coefficients are higher in case of localised holes. Additionally, to the integration of the piezoresistive sensor, actuator integrated into the cantilever is considered as fundamental for realisation of fast SPM imaging. Actuation of the beam is achieved thermally by relying on differences in the coefficients of thermal expansion between aluminum and silicon. In addition the aluminum layer forms the heating micro-resistor, which is able to accept heating impulses with frequency up to one megahertz. Such direct oscillating thermally driven bimorph actuator was studied also with respect to the bimorph actuator efficiency. Higher eigenmodes of the cantilever are used in order to increase the operating frequencies. As a result the scanning speed has been increased due to the decreasing of the actuation time constant. The fundamental limits to force sensitivity that are imposed by piezoresistive deflection sensing technique have been discussed. For imaging in ambient conditions the force sensitivity is limited by the thermo-mechanical cantilever noise. Additional noise sources, connected with the piezoresistive detection are negligible.

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.

Assessment of the RE(OH)3 Ising magnetic materials as possible candidates for the study of transverse-field-induced quantum phase transitions

The LiHoxY1−xF4 Ising magnetic material subject to a magnetic field perpendicular to the Ho3+ Ising direction has shown over the past 20 years to be a host of very interesting thermodynamic and magnetic phenomena. Unfortunately, the availability of other magnetic materials other than LiHoxY1−xF4 that may be described by a transverse-field Ising model remains very much limited. It is in this context that we use here a mean-field theory to investigate the suitability of the Ho(OH)3, Dy(OH)3, and Tb(OH)3 insulating hexagonal dipolar Ising-type ferromagnets for the study of the quantum phase transition induced by a magnetic field, Bx, applied perpendicular to the Ising spin direction. Experimentally, the zero-field critical (Curie) temperatures are known to be Tc≈2.54, 3.48, and 3.72 K, for Ho(OH)3, Dy(OH)3, and Tb(OH)3, respectively. From our calculations we estimate the critical transverse field, Bxc, to destroy ferromagnetic order at zero temperature to be Bxc=4.35, 5.03, and 54.81 T for Ho(OH)3, Dy(OH)3, and Tb(OH)3, respectively. We find that Ho(OH)3, similarly to LiHoF4, can be quantitatively described by an effective S=1/2 transverse-field Ising model. This is not the case for Dy(OH)3 due to the strong admixing between the ground doublet and first excited doublet induced by the dipolar interactions. Furthermore, we find that the paramagnetic (PM) to ferromagnetic (FM) transition in Dy(OH)3 becomes first order for strong Bx and low temperatures. Hence, the PM to FM zero-temperature transition in Dy(OH)3 may be first order and not quantum critical. We investigate the effect of competing antiferromagnetic nearest-neighbor exchange and applied magnetic field, Bz, along the Ising spin direction ẑ on the first-order transition in Dy(OH)3. We conclude from these preliminary calculations that Ho(OH)3 and Dy(OH)3 and their Y3+ diamagnetically diluted variants, HoxY1−x(OH)3 and DyxY1−x(OH)3, are potentially interesting systems to study transverse-field-induced quantum fluctuations effects in hard axis (Ising-type) magnetic materials.

VALLEY SPLITTING AND g-FACTOR IN AlAs QUANTUM WELLS

Here we present the results of magneto resistance measurements in tilted magnetic field and compare them with calculations. The comparison between calculated and measured spectra for the case of perpendicular fields enable us to estimate the dependence of the valley splitting as a function of the magnetic field and the total Lande g-factor (which is assumed to be independent of the magnetic field). Since both the exchange contribution to the Zeeman splitting as well as the valley splitting are properties associated with the 2D quantum confinement, they depend only on the perpendicular component of the magnetic field, while the bare Zeeman splitting depends on the total magnetic field. This information aided by the comparison between experimental and calculated gray scale maps permits to obtain separately the values of the exchange and the bare contribution to the g-factor.

Anomalous spin-related quantum phase in mesoscopic hole rings

We have obtained numerically exact results for the spin-related geometric quantum phases that arise in p-type semiconductor ring structures. The interplay between gate-controllable (Rashba) spin splitting and quantum-confinement-induced mixing between hole-spin states causes a much higher sensitivity of magnetoconductance oscillations to external parameters than previously expected. Our results imply a much-enhanced functionality of hole-ring spin-interference devices and shed new light on recent experimental findings.