375 resultados para pillar


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Water currents are vertically structured in many marine systems and as a result, vertical movements by fish larvae and zooplankton affect horizontal transport (Power, 1984). In estuaries, the vertical movements of larvae with tidal periods can result in their retention or ingress (Fortier and Leggett, 1983; Rijnsdorp et al., 1985; Cronin and Forward, 1986; Forward et al., 1999). On the continental shelf, the vertical movements of organisms interact daily and ontogenetically with depth-varying currents to affect horizontal transport (Pillar et al., 1989; Barange and Pillar, 1992; Cowen et al., 1993, 2000; Batchelder et al., 2002).

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In this letter, we report E off-versus-V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off/dV ce > 0 in a transition region between purely unipolar and strongly bipolar device behaviors. This effect is due to the action of p-pillar hole current when depleting the drift layer of SJ IGBTs during turnoff and the impact of current gain on the transconductance. Such SJ IGBTs surpass by a very significant margin their superjunction MOSFET counterparts in terms of power-handling capability and on-state and turnoff losses, all at the same time. © 2012 IEEE.

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The adhesive properties of the gecko foot have inspired designs of advanced micropatterned surfaces with increased contact areas. We have fabricated micropatterned pillars of vertically aligned carbon nanotube forests with a range of pillar diameters, heights, and spacings (or pitch). We used nanoindentation to measure their elastic and orthogonal adhesion properties and derive their scaling behavior. The patterning of nanotube forests into pillar arrays allows a reduction of the effective modulus from 10 to 15 MPa to 0.1-1 MPa which is useful for developing maximum conformal adhesion. © 2012 American Chemical Society.

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A modified gel-casting technique was used to fabricate a 1-3 piezoelectric ceramic/polymer composite substrate formed by irregular-shaped pillar arrays of small dimensions and kerfs. This technique involves the polymerization of aqueous piezoelectric (PZT) suspensions with added water-soluble epoxy resin and polyamine-based hardener that lead to high strength, high density and resilient ceramic bodies. Soft micromoulding was used to shape the ceramic segments, and micropillars with lateral features down to 4 m and height-to-width aspect ratios of ∼10 were achieved. The composite exhibited a clear thickness resonance mode at approximately 70 MHz and a k eff ∼ 0.51, demonstrating that the ceramic micropillars possess good electrical properties. Furthermore, gel-casting allows the fabrication of ceramic structures with non-conventional shapes; hence, device design is not limited by the standard fabrication methods. This is of particular benefit for high-frequency transducers where the critical design dimensions are reduced. © 2012 IOP Publishing Ltd.

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Hierarchical pillar arrays consisting of micrometer-sized polymer setae covered by carbon nanotubes are engineered to deliver the role of spatulae, mimicking the fibrillar adhesive surfaces of geckos. These biomimetic structures conform well and achieve better attachment to rough surfaces, providing a new platform for a variety of applications.

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Streptococcosis became an increasingly significant health problem in intensive aquaculture in China. Fifteen strains of Gram-positive, chain-forming coccus were isolated from moribund Amur sturgeon, Acipenser schrenckii, fanned with high density in central China. The coccoid microorganism was identified as Streptococcus dysgalactiae by means of physiological. biochemical properties and molecular analysis; furthermore, this coccus was confirmed as pathogen of sturgeon by challenge experiments and its infection potential on the cyprinid was also evaluated. To our knowledge, this was the first report of S. dysgalactiae linked to diseased A. schrenckii. (C) 2009 Elsevier B.V. All rights reserved.

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Six strains of Gram-positive, catalase-negative, non-motile, irregular short rod-shaped Weissella bacteria, with width and length of 0.5-0.6 and 1.2-2.7 mu m were isolated from diseased rainbow trout Oncorhynchus mykiss (Walbaum) in winter of 2007 at a commercial fishery in Jingmen, Hubei province, China. The diseased rainbow trout exhibited hemorrhage in eyes, anal region, intestine and abdomen wall, petechia of liver, some fish with hydrocele in stomach. Six isolates had identical biochemical reactions, phylogenetic analysis of 16S rDNA sequences, amplified ribosomal DNA restriction analysis (ARDRA), enzymatic profile analysis and antimicrobial susceptibility results, indicating as a single clonal outbreak. But all were different from any other validated twelve Weissella species in the term of physiological and biochemical characters. It is indicated that isolates are phylogenetically closer to Weissella halotolerans, Weissella viridescens and Weissella minor on 16S rDNA phylogenetic analysis result, than to W halotolerans and W viridescens on the result of ARDRA study and enzymatic profile analysis. Antimicrobial susceptibility testing was used to scan effective drugs for the therapy of this disease. Experimental infection assays with one isolate were conducted and pathogenicity (by intraperitoneal injection) was demonstrated in rainbow trout O. mykiss (Walbaum) and crucian carp (Carassius auratus gibelio) fingerlings. Because no Weissella was detected in fish feedstuffs and pond water, the source of this pathogen remains unknown, and Weissella isolates were regarded as an opportunistic pathogen for rainbow trout. This is the first report of Weissella strains which can cause disease of cultured fish in the world. (C) 2009 Elsevier B.V. All rights reserved.

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A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.

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Hierarchical pillar arrays consisting of micrometer-sized polymer setae covered by carbon nanotubes are engineered to deliver the role of spatulae, mimicking the fibrillar adhesive surfaces of geckos. These biomimetic structures conform well and achieve better attachment to rough surfaces, providing a new platform for a variety of applications. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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A new method to fabricate nanoscale metallic air-bridges has been investigated. The pillar patterns of the air-bridge were defined on a SiO2, sacrificial layer by electron-beam lithography combined with inductively coupled plasma etching. Thereafter, the span (suspended part between the pillars) patterns were defined with a second electron-beam exposure on a PMMA/PMMA-MAA resist system. The fabrication process was completed by subsequent metal electron-beam evaporation, lift-off in acetone, and removal of the sacrificial layer in a buffered hydrofluoric (HF) solution. Air-bridges with two different geometries (line-shaped and cross-shaped) were studied in detail. The narrowest width of the air-bridges was around 200 nm, and the typical length of the air-bridges was 2-5 mu m. The advantages of our method are the simplicity of carrying out electron-beam exposure with good reproducibility and the capability of more accurate control of the pillar sizes and shapes of the air-bridge. (C) 2007 Elsevier Ltd. All rights reserved.

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We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films.

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Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

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Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlGaAs/GaAs distributed Bragg reflector (DBR) and a surface GaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80K

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A theoretical surface-state model of porous-silicon luminescence is proposed. The temperature effect on the PhotoLuminescence (PL) spectrum for pillar and spherical structures is considered, and it is found that the effect is dependent on the doping concentration, the excitation strength, and the shape and dimensions of the Si microstructure. The doping concentration has an effect on the PL intensity at high temperatures and the excitation strength has an effect on the PL intensity at low temperaturs. The variations of the PL intensity with temperature are different for the pillar and spherical structures. At low temperatures the PL intensity increases in the pillar structure, while in the spherical structure the PL intensity decreases as the temperature increases, at high temperatures the PL intensities have a maximum for both models. The temperature, at which the PL intensity reaches its maximum, depends on the doping concentration. The PL spectrum has a broader peak structure in the spherical structure than in the pillar structure. The theoretical results are in agreement with experimental results.

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Funding and support for this project was provided by NSFC (Grant No. 40771015), and Key International Science and Technology Cooperation Projects (Grant No. 22007DFC20180). The authors also gratefully acknowledge the support of Key Projects in the National Science & Technology Pillar Program in the Eleventh Five-year Plan Period (Grant No. 2006BAD01B06-02). The authors thank the CDCs of Daqing, Beijing, Tianjin, Zhengzhou, Changsha and Shenzhen cities for field and laboratory technical support.