Structural and optical investigations of TiO2 films deposited on transparent substrates by sol-gel technique

An inexpensive and effective simple method for the preparation of nano-crystalline titanium oxide (anatase) thin films at room temperature on different transparent substrates is presented. This method is based on the use of peroxo-titanium complex, i.e. titanium isopropoxide as a single initiating organic precursor. Post-annealing treatment is necessary to convert the deposited amorphous film into titanium oxide (TiO2) crystalline (anatase) phase. These films have been characterized for X-ray diffraction (XRD) studies, atomic force microscopic (AFM) studies and optical measurements. The optical constants such as refractive index and extinction coefficient have been estimated by using envelope technique. Also, the energy gap values have been estimated using Tauc's formula for on glass and quartz substrates are found to be 3.35 eV and 3.39 eV, respectively.

Structural and optical investigation of semiconductor CdSe/CdS core-shell quantum dot thin films

Highly luminescent CdSe/CdS core-shell nanocrystals have been assembled on indium tin oxide (ITO) coated glass substrates using a wet synthesis route. The physical properties of the quantum dots (QD) have been investigated using X-ray diffraction, transmission electron microscopy and optical absorption spectroscopy techniques. These quantum dots showed a strong enhancement in the near band edge absorption. The in situ luminescence behavior has been interpreted in the light of the quantum confinement effect and induced strain in the core-shell structure.

Structural and optical investigations of TiO2 films deposited on transparent substrates by sol-gel technique

An inexpensive and effective simple method for the preparation of nano-crystalline titanium oxide (anatase) thin films at room temperature on different transparent substrates is presented. This method is based on the use of peroxo-titanium complex, i.e. titanium isopropoxide as a single initiating organic precursor. Post-annealing treatment is necessary to convert the deposited amorphous film into titanium oxide (TiO2) crystalline (anatase) phase. These films have been characterized for X-ray diffraction (XRD) studies, atomic force microscopic (AFM) studies and optical measurements. The optical constants such as refractive index and extinction coefficient have been estimated by using envelope technique. Also, the energy gap values have been estimated using Tauc's formula for on glass and quartz substrates are found to be 3.35 eV and 3.39 eV, respectively. (C) 2008 Elsevier B.V. All rights reserved.

Insulating phase of a disordered system: Fermi glass versus electron glass

The authors examine the critical divergence of the low-frequency conductivity of the noninteracting Fermi glass and interacting electron glass models of the insulating phase of a disordered system as the metallic phase is approached. Results for the two are found to be rather different, which can be tested experimentally. In particular, for the electron glass, there exists a nonvanishing contribution to the dielectric constants from the low-frequency (hopping) conductivity even at low temperatures, which scales with the high-frequency (optical) contribution, and diverges with the same exponent at the insulator-metal transition.

Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films

The electrical activation energy and optical band-gap of GeSe and GeSbSe thin films prepared by flash evaporation on to glass substrates have been determined. The conductivities of the films were found to be given by Image , the activation energy Ea being 0.53 eV and 0.40 eV for GeSe and GeSbSe respectively. The optical absorption constant α near the absorption edge could be described by Image from which the optical band-gaps E0 were found to be 1.01 eV for GeSe and 0.67 eV for GeSbSe at 300°K. At 110°K the corresponding values of E0 were 1.07 eV and 0.735 eV respectively. The significance of these values is discussed in relation to those of other amorphous semiconductors.

Nanoindentation study on germania-doped silica glass preforms: evidence for the compaction-densification model of photosensitivity

Nanoindentation technique was employed to measure the changes in mechanical properties of a glass preform subjected to different levels of UV exposure. The results reveal that short-term exposure leads to an appreciable increase in the Young's modulus (E), suggesting the densification of the glass, confirming the compaction-densification model. However, on prolonged exposure, E decreases, which provides what we believe to be the first direct evidence of dilation in the glass leading into the Type IIA regime. The present results rule out the hypothesis that continued exposure leads to an irreversible compaction and prove that index modulation regimes are intrinsic to the glass matrix.

Rapid quenching and glass formation in chalcogenide glasses: Preparation and properties of Ge-As-Te glasses over an extended composition ranges

In Ge-As-Te system, the glass forming region determined by normal melt quenching method has two regions (GFR I and GFR II) separated by few compositions gap. With a simple laboratory built twin roller apparatus, we have succeeded in preparing Ge7.5AsxTe92.5-x glasses over extended composition ranges. A distinct change in T-g is observed at x = 40, exactly at which the separation of the glass forming regions occur indicating the changes in the connectivity and the rigidity of the structural network. The maximum observed in glass transition (T-g) at x = 55 corresponding to the average coordination number (Z(av)) = 2.70 is an evidence for the shift of the rigidity percolation threshold (RPT) from Z(av) = 2.40 as predicted by the recent theories. The glass forming tendency (K-gl) and Delta T (=T-c-T-g) is low for the glasses in the GFR I and high for the glasses in the GFR II.

Effect of oxygen partial pressure on the structural and optical properties of dc reactive magnetron sputtered molybdenum oxide films

Molybdenum oxide films (MoO3) were deposited on glass and crystalline silicon substrates by sputtering of molybdenum target under various oxygen partial pressures in the range 8 × 10−5–8 × 10−4 mbar and at a fixed substrate temperature of 473 K employing dc magnetron sputtering technique. The influence of oxygen partial pressure on the composition stoichiometry, chemical binding configuration, crystallographic structure and electrical and optical properties was systematically studied. X-ray photoelectron spectra of the films formed at 8 × 10−5 mbar showed the presence of Mo6+ and Mo5+ oxidation states of MoO3 and MoO3−x. The films deposited at oxygen partial pressure of 2 × 10−4 mbar showed Mo6+ oxidation state indicating the films were nearly stoichiometric. It was also confirmed by the Fourier transform infrared spectroscopic studies. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 × 10−4 mbar showed the presence of (0 k 0) reflections indicated the layered structure of α-phase MoO3. The electrical conductivity of the films decreased from 3.6 × 10−5 to 1.6 × 10−6 Ω−1 cm−1, the optical band gap of the films increased from 2.93 to 3.26 eV and the refractive index increased from 2.02 to 2.13 with the increase of oxygen partial pressure from 8 × 10−5 to 8 × 10−4 mbar, respectively.

Optical, dielectric and morphological studies of sol-gel derived nanocrystalline TiO2 films

Nanocrystalline TiO2 films have been synthesized on glass and silicon substrates by sol-gel technique. The films have been characterized with optical reflectance/transmittance in the wavelength range 300-1000nm and the optical constants (n, k) were estimated by using envelope technique as well as spectroscopic ellipsometry. Morphological studies have been carried Out using atomic force microscope (AFM). Metal-Oxide-Silicon (MOS) capacitor was fabricated using conducting coating on TiO2 film deposited on silicon. The C-V measurements show that the film annealed at 300 degrees C has a dielectric constant of 19.80. The high percentage of transmittance, low surface roughness and high dielectric constant suggests that it can be used as an efficient anti-reflection coating on silicon and other optical coating applications and also as a MOS capacitor.

Evolution of nanocrystalline BaBi2Nb2O9 in Li2B4O7 BaO-Bi(2)O3-Nb2O5 glass system

Transparent glasses and glass nano crystal composites (GNCs) of various compositions in the system (100 - x)Li2B4O7-x (BaO-Bi2O3-Nb2O5) (where x = 10, 20, and 30 in molar ratio) were fabricated via splat-quenching technique. The glassy nature of the as quenched samples was established by differential thermal analyses. X-ray powder diffraction and transmission electron microscopic (TEM) studies confirmed the formation of layered perovskite BBN via a fluorite like phase. TEM studies revealed the presence of 10 nm sized spherical crystallites of fluorite like BaBi2Nb2O9 phase in the glassy matrix of Li2B4O7 (LBO). The influence of composition on the dielectric and the optical properties (transmission, optical band gap) of these samples has been investigated. (c) 2007 Elsevier B.V. All rights reserved.

Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films

Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO2 thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO2 films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO2 films was estimated by Tauc's method at different annealing temperature. (C) 2010 Elsevier B.V. All rights reserved.

Synthesis and characterization of Zn1-xMnxS nanocrystalline films prepared on glass substrates

Nanocrystalline Zn1-xMnxS films (x=0.04, 0.08 and 0.12) were deposited on glass substrates at 400 K using a simple resistive thermal evaporation technique. All the deposited films were characterized by chemical, structural, morphological, optical and magnetic properties. Scanning electron microscopy and atomic force microscopy studies showed that all the films investigated were in nanocrystalline form with the grain size lying in the range 10–20 nm. All the films exhibited cubic structure and the lattice parameters increase linearly with composition. The absorption edge shifted from the higher-wavelength region to lower wavelengths with increase in Mn concentration. The magnetization increased sharply with increase of the Mn content up to x=0.08 and then decreased with further increase of the Mn content. Particularly, Zn0.92Mn0.08S concentration samples show a weak ferromagnetic nature, which might be the optimum concentration for optoelectronic and spintronic device applications.

Studies on optical absorption and photoluminescenceproperties of Pr3+ and Nd3+ doped mixed alkali chloroborate glasses

This article presents the optical absorption and emission properties of Pr3+ and Nd3+ doped two different mixed alkali chloroborate glass matrices of the type 70B(2)O(3)center dot xLiCl center dot(30 - x)NaCl and 70B(2)O(3)center dot xLiCl center dot(30 - x)KCl (x = 5, 10, 15.20 and 25). The variation of Judd-Ofelt parameters (Omega(2), Omega(4) and Omega(6)), total radiative transition probabilities (A(T)), radiative lifetimes (tau(R)) and emission cross-sections (sigma(p)) with the variation of alkali contents in the glass matrix have been discussed in detail. The changes in the peak wavelengths of the hypersensitive transition and intensity parameters with x are correlated to the structural changes in the host matrix. The estimated radiative lifetimes of certain excited states of Pr3+ and Nd3+ in these two glass matrices are reported. Peak stimulated emission cross-sections (sigma(p)) are reported for the observed emission transitions of Pr3+ and Nd3+ ions. Branching ratios (beta) of the observed emission transitions obtained from the Judd-Ofelt theory are compared with the values obtained from the emission spectra. (C) 2010 Elsevier B.V. All rights reserved.

Photoacoustic investigation of the optical absorption and thermal diffusivity in SixTe100−x glassesstar

The photoacoustic technique is used to determine the optical energy gap E0 of bulk SixTe100−x glasses in the glass-forming region 10 ≤ x ≤ 28. The thermal diffusivity α of these samples has also been measured. The variation of E0 and α with x is reported. It is found that E0 increases with x nearly linearly with a sharp decrease in the rate of increase beyond x = 20. The thermal diffusivity also increases with x up to x = 20 but decreases for compositions with higher values of x. The observed behaviour is explained on the basis of a chemical bond approach. It is accounted for in terms of the increase in the number of Te---Te bonds and formation of SiTe4 tetrahedra with an increase in the chalcogen content.

Effect of sintering on optical, structural and photoluminescence properties of ZnO thin films prepared by sol-gel process

Zinc oxide (ZnO) thin films have been deposited on glass substrates via sol-gel technique using zinc acetate dihydrate as precursor by spin coating of the sol at 2000 rpm. Effects of annealing temperature on optical, structural and photo luminescence properties of the deposited ZnO films have been investigated. The phase transition from amorphous to polycrystalline hexagonal wurtzite structure was observed at an annealing temperature of 400 degrees C. An average transmittance of 87% in the visible region has been obtained at room temperature. The optical transmittance has slightly increased with increase of annealing temperature. The band gap energy was estimated by Tauc's method and found to be 3.22 eV at room temperature. The optical band gap energy has decreased with increasing annealing temperature. The photoluminescence (PL) intensity increased with annealing temperature up to 200 degrees C and decreased at 300 degrees C. (c) 2010 Elsevier B.V. All rights reserved.