Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes

The photovoltaic spectral features and the behaviors of photocurrent versus the electrode potential for near surface In0.15Ga0.85As/GaAs quantum well electrodes have been investigated in nonaqueous solutions of ferrocene and acetylferrocene. The photovoltaic spectrum shows a sharp structure that reflects confined state-to-state exciton transition in the quantum well. Deep dips are observed in the photocurrent versus the electrode potential curves in both electrolytes at the different electrode potentials under the illumination of exciton resonance wavelength. These dips are qualitatively explained by considering the interfacial tunneling transfer of photogenerated electron within the quantum well.

Annealing behaviors of photoluminescence from SiOx : H

The strong photoluminescence (PL) of SiOx:H prepared by plasma enhanced chemical vapor deposition has been systematically studied in conjunction with infrared and micro-Raman spectra. We have found that each PL spectrum is comprised of two Gaussian components, a main band and a shoulder. The main band might originate from amorphous silicon clusters embedded in die SiOx network, and its redshift with annealing temperature is due to expansion of the silicon clusters. The shoulder remains at about 835 nm in spite of the annealing temperature and possibly comes from luminescent defect centers. The enhanced PL spectra after 1170 degrees C annealing are attributed to the quantum confinement effects of nanocrystalline silicon embedded in the SiO2 matrix. (C) 1998 American Institute of Physics.

Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers

Experimental and theoretical study of the self-heating effect on the two-state lasing behaviors in 1.3-mu m self-assembled InAs-GaAs quantum dot (QD) lasers is presented. Lasing spectra under different injected currents, light-current (L-I) curves measured in continuous and pulsed regimes as well as a rate-equation model considering the current heating have been employed to analyze the ground-state (GS) and excited-state (ES) lasing processes. We show that the self-heating causes the quenching of the GS lasing and the ES lasing by the increased carrier escape rate and the reduced maximum modal gain of GS and ES.

Experimental investigation on TBAB clathrate hydrate slurry flows in a horizontal tube: Forced convective heat transfer behaviors

Tetra-n-butyl-ammonium bromide (TBAB) clathrate hydrate slurry (CHS) is one kind of secondary refrigerants, which is promising to be applied into air-conditioning or latent-heat transportation systems as a thermal storage or cold carrying medium for energy saving. It is a solid-liquid two phase mixture which is easy to produce and has high latent heat and good fluidity. In this paper, the heat transfer characteristics of TBAB slurry were investigated in a horizontal stainless steel tube under different solid mass fractions and flow velocities with constant heat flux. One velocity region of weakened heat transfer was found. Moreover, TBAB CHS was treated as a kind of Bingham fluids, and the influences of the solid particles, flow velocity and types of flow on the forced convective heat transfer coefficients of TBAB CHS were investigated. At last, criterial correlations of Nusselt number for laminar and turbulent flows in the form of power function were summarized, and the error with experimental results was within 20%.

High temperature annealing behaviors of luminescent SIOx : H films

The effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170 degrees C annealed films. The dependence of optical coefficients (alpha) on photon energy (h nu) near the absorption edge (E-g) is found to follow the square root law: (alpha h nu)(1/2) proportional to (E-g - h nu), indicating that nano-Si embedded in SiO2 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.

Dynamic behaviors of mode III interfacial crack under a constant loading rate

In an earlier study on intersonic crack propagation, Gao et al. (J. Mech. Phys. Solids 49: 2113-2132, 2001) described molecular dynamics simulations and continuum analysis of the dynamic behaviors of a mode II dominated crack moving along a weak plane under a constant loading rate. The crack was observed to initiate its motion at a critical time after the onset of loading, at which it is rapidly accelerated to the Rayleigh wave speed and propagates at this speed for a finite time interval until an intersonic daughter crack is nucleated at a peak stress at a finite distance ahead of the original crack tip. The present article aims to analyze this behavior for a mode III crack moving along a bi-material interface subject to a constant loading rate. We begin with a crack in an initially stress-free bi-material subject to a steadily increasing stress. The crack initiates its motion at a critical time governed by the Griffith criterion. After crack initiation, two scenarios of crack propagation are investigated: the first one is that the crack moves at a constant subsonic velocity; the second one is that the crack moves at the lower shear wave speed of the two materials. In the first scenario, the shear stress ahead of the crack tip is singular with exponent -1/2, as expected; in the second scenario, the stress singularity vanishes but a peak stress is found to emerge at a distance ahead of the moving crack tip. In the latter case, a daughter crack supersonic with respect to the softer medium can be expected to emerge ahead of the initial crack once the peak stress reaches the cohesive strength of the interface.