Sol-gel synthesis of mesoporous CaCu3Ti4O12 thin films and their gas sensing response

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Oxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources

Since oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type conductivity. Since bandgap transitions are in the ultraviolet range, its photoconductivity is strongly dependent on the excitation source. We have measured variation of photoconductivity excitation with wavelength for tin dioxide grown by dip-coating sol-gel technique using several light sources: tungsten lamp, xenon, mercury and deuterium, and present selected results. The main band is obtained in the range 3-4eV according to light source spectrum in the ultraviolet range. The presence of oxygen in the cryostat also affects the spectrum since electron-hole pairs react with adsorbed oxygen specimens. © 1999 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.

Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides

Erbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 → 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.

Optical and transport properties of rare-earth trivalent ions located at different sites in sol-gel SnO2

Photoluminescence and photo-excited conductivity data as well as structural analysis are presented for sol-gel SnO2 thin films doped with rare earth ions Eu3+ and Er3+, deposited by sol-gel-dip-coating technique. Photoluminescence spectra are obtained under excitation with various types of monochromatic light sources, such as Kr+, Ar+ and Nd:YAG lasers, besides a Xe lamp plus a selective monochromator with UV grating. The luminescence fine structure is rather different depending on the location of the rare-earth doping, at lattice symmetric sites or segregated at the asymmetric grain boundary layer sites. The decay of photo-excited conductivity also shows different trapping rate depending on the rare-earth concentration. For Er-doped films, above the saturation limit, the evaluated capture energy is higher than for films with concentration below the limit, in good agreement with the different behaviour obtained from luminescence data. For Eu-doped films, the difference in the capture energy is not so evident in these materials with nanoscocopic crystallites, even though the luminescence spectra are rather distinct. It seems that grain boundary scattering plays a major role in Eu-doped SnO2 films. Structural evaluation helps to interpret the electro-optical data. © 2010 IOP Publishing Ltd.

Broadband NIR emission in novel sol-gel Er3+-doped SiO 2-Nb2O5 glass ceramic planar waveguides for photonic applications

This paper reports on the sol-gel preparation and structural and optical characterization of new Er3+-doped SiO2-Nb 2O5 nanocomposite planar waveguides. Erbium-doped (100-x)SiO2-xNb2O5 waveguides were deposited on silica-on-silicon substrates and Si(1 0 0) by the dip-coating technique. The waveguides exhibited uniform refractive index distribution across the thickness, efficient light injection at 1538 nm, and low losses at 632 and 1538 nm. The band-gap values lied between 4.12 eV and 3.55 eV for W1-W5, respectively, showing an excellent transparency in the visible and near infrared region for the waveguides. Fourier Transform Infrared (FTIR) Spectroscopy analysis evidenced SiO2-Nb2O5 nanocomposite formation with controlled phase separation in the films. The HRTEM and XRD analyses revealed Nb2O5 orthorhombic T-phase nanocrystals dispersed in a silica-based host. Photoluminescence (PL) analysis showed a broad band emission at 1531 nm, assigned to the 4I13/2 → 4I15/2 transition of the Er3+ ions present in the nanocomposite, with a full-width at half medium of 48-68 nm, depending on the niobium content and annealing. Hence, these waveguides are excellent candidates for application in integrated optics, especially in EDWA and WDM devices. © 2012 Elsevier B.V. All rights reserved.

Efeito fotocrômico em Ormosil's dopados com molibdênio preparados por síntese de Sol-Gel

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Recobrimentos cerâmicos bioativos pelo processo sol-gel sobre Ti c.p. modificado por laser empregados em implantes

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Simulação numérica da fase líquida na deposição de filmes finos via sol-gel: aplicações para dióxido de estanho

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Aplicação do processo sol-gel na produção de recobrimentos de hidroxiapatita sobre ligas a base de Ti empregadas em implantes odontológicos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Processo de preparação de zirconia dopada e não dopada pela rota sol-gel usando nitrato de zirconila como material de partida

Processo de Preparação de Zirconia Dopada e não Dopada pela Rota Sol-Gel Usando Nitrato de Zirconila como Material de Partida compreendendo as etapas de preparação de uma solução de nitratos de zirconila e outros nitratos metálicos em solução aquosa com composto orgânico de etanol metanol ou acetona, através do controle de molaridade. Embora não limitantes, valores ideais para molaridade das soluções são: entre 1,00 e 0,29 para obtenção de pó entre 0,29 e 0,18 para obtenção de superfície recoberta e entre 0,18 e 0,13 para obtenção de filmes finos. Manter a solução a 0°C para formação de filmes finos por imersão do substrato ou monocristal com velocidade constante ("dip-coating") ou por rotação a velocidade constante ("spinning"), ou para recobrimento de superfícies metálicas através de imersões sucessivas do substrato metálico a velocidade constante ("dip-coating"). Elevar a solução a 50°C para hidrolização e formação de um gel em forma de pó, secagem de pó ou liofilização, calcinação e moagem dos aglomerados.

Preparation of TiO2/SnO2 Thin Films by Sol-Gel Method and Periodic B3LYP Simulations

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Propriedades ópticas e elétricas de materiais híbridos de sílica/orgânico à base de GPTS:TEOS preparados pelo método sol-gel

Fabrication of optoelectronic devices requires the employment of at least one transparent electrode. Usually, commercially transparent electrodes have been made by deposition of indium tin oxide (ITO) films by RF-Sputtering technique. These commercial electrodes have sheet resistance of about 100 Ω/sq and optical transmittance of 77% at the wavelength of 550 nm. The poly(3,4-ethylenedioxythiophene):polystyrene-sulfonate (PEDOT:PSS) is an alternative material to fabricate transparent electrodes due to its high conductivity (about 600 S/cm) and solubility in water. Soluble conductive materials exhibits advantages for processing of electrode layers, however there is a disadvantage during devices fabrication once materials with the same solvent of the electrode material cannot be coated one over the other. Alternatively, organic/Silica hybrid materials prepared by sol-gel process allow producing bulks and films with high chemical durability. In order to obtain transparent electrodes with high chemical durability, we introduced a blended material comprising the high UV-VIS transparency of organic/Silica sol-gel material and a high conductivity polymer PEDOT:PSS. The organic/Silica sol was obtained using two different molar concentrations (1:1 and 4:1), of tetraethylorthosilicate (TEOS) and 3-glycidoxypropyltrimethoxysilane (GPTS). Amounts of PEDOT:PSS solutions were added to the sol material, resulting in different weight fractions of sol and polymer. G:T/P:P were deposit onto glass substrates by spray-coating. In order to perform electrical characterization of the blended material, gold electrodes were thermally evaporated onto the films. The electrical characterization was performed using a Keithley 2410 source/meter unity and the optical characterization, using a Cary50 UV-Vis spectrophotometer. The absorption coefficient and electric conductivity of the different compositions blends, as function of the PEDOT:PSS concentration, were...

Efeito da infiltração de sílica pelo método sol-gel na resistência à flexão de bicamadas de porcelana e Y-TZP

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Preparação e caracterização óptica de filmes de ORMOSIL obtidos via processo sol-gel dopados com azocorantes

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Propriedades elétricas de materiais híbridos de Sílica/orgânico à base de GPTS/TEOS preparados pelo método sol-gel

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)