Assessment of quality defects in macadamia kernels using NIR spectroscopy

Spectral data were collected of intact and ground kernels using 3 instruments (using Si-PbS, Si, and InGaAs detectors), operating over different areas of the spectrum (between 400 and 2500 nm) and employing transmittance, interactance, and reflectance sample presentation strategies. Kernels were assessed on the basis of oil and water content, and with respect to the defect categories of insect damage, rancidity, discoloration, mould growth, germination, and decomposition. Predictive model performance statistics for oil content models were acceptable on all instruments (R2 > 0.98; RMSECV < 2.5%, which is similar to reference analysis error), although that for the instrument employing reflectance optics was inferior to models developed for the instruments employing transmission optics. The spectral positions for calibration coefficients were consistent with absorbance due to the third overtones of CH2 stretching. Calibration models for moisture content in ground samples were acceptable on all instruments (R2 > 0.97; RMSECV < 0.2%), whereas calibration models for intact kernels were relatively poor. Calibration coefficients were more highly weighted around 1360, 740 and 840 nm, consistent with absorbance due to overtones of O-H stretching and combination. Intact kernels with brown centres or rancidity could be discriminated from each other and from sound kernels using principal component analysis. Part kernels affected by insect damage, discoloration, mould growth, germination, and decomposition could be discriminated from sound kernels. However, discrimination among these defect categories was not distinct and could not be validated on an independent set. It is concluded that there is good potential for a low cost Si photodiode array instrument to be employed to identify some quality defects of intact macadamia kernels and to quantify oil and moisture content of kernels in the process laboratory and for oil content in-line. Further work is required to examine the robustness of predictive models across different populations, including growing districts, cultivars and times of harvest.

Microprocessor-controlled automatic focusing of a lens

Maximum intensity contrast has been used as a measure of lens defocus. A photodiode array under the control of 8085 microprocessor is used to measure the maximum intensity contrast and to position the lens for best focus. The lens is moved by a stepper motor under processor control at a speed of 350 to 500 steps/s. At this speed, focusing time was found to be between 5 and 8 s. Under coherent illuminating conditions, an accuracy of ± 50 μm has been achieved.

Stresses and Displacements under a Flexible Circular Foundation in the Presence of Friction or Adhesion

Die Vorliegende Arbeit beschäftigt sich mit den Spannungen und Verschiebungen an einem elastischen Halbraum unter einem kreisförmigen biegsamen Fundament, wenn an der Kontaktfläche vollkommenes Haften besteht. Das gemischte Randwertproblem wird mit Hilfe von Hankel-Transformationen auf duale Integralgleichungen von Titchmarsh- Typ zurückgeführt. Für die Berechnung der Spannungen und Verschiebungen werden Gaußsche Quadraturformeln benutzt. Die Ergebnisse werden mit denen verglichen, die man bei glattem Fundament erhält, und der Einfluß der Poisson-Zahl auf die Spannungen und Verschiebungen wird deutlich gemacht. Schließlich werden die Ergebnisse für den praktischen Gebrauch in Diagrammen und Tabellen zusammengefaßt.

Stresses and Displacements under a Flexible Circular Foundation in the Presence of Friction or Adhesion

Die Vorliegende Arbeit beschäftigt sich mit den Spannungen und Verschiebungen an einem elastischen Halbraum unter einem kreisförmigen biegsamen Fundament, wenn an der Kontaktfläche vollkommenes Haften besteht. Das gemischte Randwertproblem wird mit Hilfe von Hankel-Transformationen auf duale Integralgleichungen von Titchmarsh- Typ zurückgeführt. Für die Berechnung der Spannungen und Verschiebungen werden Gaußsche Quadraturformeln benutzt. Die Ergebnisse werden mit denen verglichen, die man bei glattem Fundament erhält, und der Einfluß der Poisson-Zahl auf die Spannungen und Verschiebungen wird deutlich gemacht. Schließlich werden die Ergebnisse für den praktischen Gebrauch in Diagrammen und Tabellen zusammengefaßt.

Measuring free ellagic acid: influence of extraction conditions on recovery by studying solubility and UV-Visible spectra

Recent investigations into plant tissues have indicated that the free form of the natural polyphenolic antioxidant, ellagic acid (EA), is much more plentiful than first envisaged; consequently a re-assessment of solvent systems for the extraction of this water-insoluble form is needed. As EA solubility and its UV-Vis spectrum, commonly used for detection and quantification, are both governed by pH, an understanding of this dependence is vital if accurate EA measurements are to be achieved. After evaluating the pH effects on the solubility and UV-Vis spectra of commercial EA, an extraction protocol was devised that promoted similar pH conditions for both standard solutions and plant tissue extracts. The extraction so devised followed by HPLC with photodiode-array detection (DAD) provided a simple, sensitive and validated methodology that determined free EA in a variety of plant extracts. The use of 100 % methanol or a triethanolamine-based mixture as the standard dissolving solvents were the best choices, while these higher pH-generating solvents were more efficient in extracting EA from the plants tested with the final choice allied to the plants’ natural acidity. Two of the native Australian plants anise myrtle (Syzygium anisatum) and Kakadu plum (Terminalia ferdinandiana) exhibited high concentrations of free EA. Furthermore, the dual approach to measuring EA UV-Vis spectra made possible an assessment of the effect of acidified eluent on EA spectra when the DAD was employed.

EIT as a tool to observe dual wavelength operation of a semiconductor laser

We propose a simplified technique for dual wavelength operation of an extended cavity semiconductor laser, and its characterization using electromagnetically induced transparency (EIT). In this laser cavity scheme light beam is made converging before it incidences on the cavity grating. The converging angle of the beam creates two longitudinal oscillating modes of resonating cavity. Frequency separation between the longitudinal modes are measured with the help of beat frequency generation in a photodiode and creating pair of EIT spectra in Rb vapor. The pair of EIT dips that are generated due to dual wavelength of this laser (that is used as control laser) can be used to estimate frequency difference between the generated wavelengths. Width of EIT spectra can be used to estimate line width of individual wavelength components.

Noise measurements of a phase fluorometric instrument

We present noise measurements of a phase fluorometric oxygen sensor that sets the limits of accuracy for this instrument. We analyze the phase sensitive detection measurement system with the signal ''shot'' noise being the only significant contribution to the system noise. Based on the modulated optical power received by the photomultiplier, the analysis predicts a noise spectral power density that was within 3 dB of the measured power spectral noise density. Our results demonstrate that at a received optical power of 20 fW the noise level was low enough to permit the detection of a change oxygen concentration of 1% at the sensor. We also present noise measurements of a new low-cost version of this instrument that uses a photodiode instead of a photomultiplier. These measurements show that the noise for this instrument was limited by noise generated in the preamplifier following the photodiode. (C) 1996 Society of Photo-Optical Instrumentation Engineers.

Transport properties of CuIn1-xAlxSe2/AZnO heterostructure for low cost thin film photovoltaics

CuIn1-xAlxSe2 (CIASe) thin films were grown by a simple sol-gel route followed by annealing under vacuum. Parameters related to the spin-orbit (Delta(SO)) and crystal field (Delta(CF)) were determined using a quasi-cubic model. Highly oriented (002) aluminum doped (2%) ZnO, 100 nm thin films, were co-sputtered for CuIn1-xAlxSe2/AZnO based solar cells. Barrier height and ideality factor varied from 0.63 eV to 0.51 eV and 1.3186 to 2.095 in the dark and under 1.38 A. M 1.5 solar illumination respectively. Current-voltage characteristics carried out at 300 K were confined to a triangle, exhibiting three limiting conduction mechanisms: Ohms law, trap-filled limit curve and SCLC, with 0.2 V being the cross-over voltage, for a quadratic transition from Ohm's to Child's law. Visible photodetection was demonstrated with a CIASe/AZO photodiode configuration. Photocurrent was enhanced by one order from 3 x 10(-3) A in the dark at 1 V to 3 x 10(-2) A upon 1.38 sun illumination. The optimized photodiode exhibits an external quantum efficiency of over 32% to 10% from 350 to 1100 nm at high intensity 17.99 mW cm(-2) solar illumination. High responsivity R-lambda similar to 920 A W-1, sensitivity S similar to 9.0, specific detectivity D* similar to 3 x 10(14) Jones, make CIASe a potential absorber for enhancing the forthcoming technological applications of photodetection.

Bright-field and fluorescence chip-scale microscopy for biological imaging

Optical microscopy is an essential tool in biological science and one of the gold standards for medical examinations. Miniaturization of microscopes can be a crucial stepping stone towards realizing compact, cost-effective and portable platforms for biomedical research and healthcare. This thesis reports on implementations of bright-field and fluorescence chip-scale microscopes for a variety of biological imaging applications. The term “chip-scale microscopy” refers to lensless imaging techniques realized in the form of mass-producible semiconductor devices, which transforms the fundamental design of optical microscopes.

Our strategy for chip-scale microscopy involves utilization of low-cost Complementary metal Oxide Semiconductor (CMOS) image sensors, computational image processing and micro-fabricated structural components. First, the sub-pixel resolving optofluidic microscope (SROFM), will be presented, which combines microfluidics and pixel super-resolution image reconstruction to perform high-throughput imaging of fluidic samples, such as blood cells. We discuss design parameters and construction of the device, as well as the resulting images and the resolution of the device, which was 0.66 µm at the highest acuity. The potential applications of SROFM for clinical diagnosis of malaria in the resource-limited settings is discussed.

Next, the implementations of ePetri, a self-imaging Petri dish platform with microscopy resolution, are presented. Here, we simply place the sample of interest on the surface of the image sensor and capture the direct shadow images under the illumination. By taking advantage of the inherent motion of the microorganisms, we achieve high resolution (~1 µm) imaging and long term culture of motile microorganisms over ultra large field-of-view (5.7 mm × 4.4 mm) in a specialized ePetri platform. We apply the pixel super-resolution reconstruction to a set of low-resolution shadow images of the microorganisms as they move across the sensing area of an image sensor chip and render an improved resolution image. We perform longitudinal study of Euglena gracilis cultured in an ePetri platform and image based analysis on the motion and morphology of the cells. The ePetri device for imaging non-motile cells are also demonstrated, by using the sweeping illumination of a light emitting diode (LED) matrix for pixel super-resolution reconstruction of sub-pixel shifted shadow images. Using this prototype device, we demonstrate the detection of waterborne parasites for the effective diagnosis of enteric parasite infection in resource-limited settings.

Then, we demonstrate the adaptation of a smartphone’s camera to function as a compact lensless microscope, which uses ambient illumination as its light source and does not require the incorporation of a dedicated light source. The method is also based on the image reconstruction with sweeping illumination technique, where the sequence of images are captured while the user is manually tilting the device around any ambient light source, such as the sun or a lamp. Image acquisition and reconstruction is performed on the device using a custom-built android application, constructing a stand-alone imaging device for field applications. We discuss the construction of the device using a commercial smartphone and demonstrate the imaging capabilities of our system.

Finally, we report on the implementation of fluorescence chip-scale microscope, based on a silo-filter structure fabricated on the pixel array of a CMOS image sensor. The extruded pixel design with metal walls between neighboring pixels successfully guides fluorescence emission through the thick absorptive filter to the photodiode layer of a pixel. Our silo-filter CMOS image sensor prototype achieves 13-µm resolution for fluorescence imaging over a wide field-of-view (4.8 mm × 4.4 mm). Here, we demonstrate bright-field and fluorescence longitudinal imaging of living cells in a compact, low-cost configuration.

激光尘埃粒子计数器微型光学传感器的研究

研制成功便携式激光尘埃粒子计数器的核心部件——微型光学传感器。该传感器采用直角散射光收集形式。以高功率半导体激光器作为光源，同时采用高性能的PIN型光电二极管作为光电探测器。散射光收集系统为单一大数值孔径的球面反射镜，其对粒子散射光的收集角范围从20°到160°。粒子散射光信号是脉冲信号，其频谱成份主要在高频段，所以在PIN型光电二极管后用一个带通式前置放大器来消除外界的低频噪声．根据米氏散射理论计算了该光学传感器的光散射响应特性，并用聚苯乙烯标准粒子实测了该光学传感器的性能。结果表明，该系统具有高的信噪

Demonstration of multi wavelength picosecond pulse generation with resonant RF drive using an monolithically integrated multi-grating cavity (MGC) laser

Multiwavelength pulses were generated using a monolithically integrated device. The device used is an integrated InGaAs/InGaAsP/InP multi-wavelength laser fabricated by selective area regrowth. The device self pulsated on all of the four wavelength channels. 48 ps pulses were obtained which were measured by a 50GHz oscilloscope and 32GHz photodiode which was not bandwidth limited. Simultaneous multi-wavelength pulse generation was also achieved.

Gigacount/second photon detection with InGaAs avalanche photodiodes

We demonstrate high count rate single photon detection at telecom wavelengths using a thermoelectrically-cooled semiconductor diode. Our device consists of a single InGaAs avalanche photodiode driven by a 2 GHz gating frequency signal and coupled to a tuneable self-differencing circuit for enhanced detection sensitivity. We find the count rate is linear with the photon flux in the single photon detection regime over approximately four orders of magnitude, and saturates at 1 gigacount/s at high photon fluxes. This result highlights promising potential for APDs in high bit rate quantum information applications.

Calibration of the spring constant of cantilevers of arbitrary shape using the phase signal in an atomic force microscope.

The measurement of cantilever parameters is an essential part of performing a calibrated measurement with an atomic force microscope (AFM). The thermal motion method is a widely used technique for calibrating the spring constant of an AFM cantilever, which can be applied to non-rectangular cantilevers. Given the trend towards high frequency scanning, calibration of non-rectangular cantilevers is of increasing importance. This paper presents two results relevant to cantilever calibration via the thermal motion method. We demonstrate the possibility of using the AFM's phase signal to acquire the thermal motion. This avoids the challenges associated with connecting the raw photodiode signal to a separate spectrum analyser. We also describe how numerical calculations may be used to calculate the parameters needed in a thermal motion calibration of a non-rectangular cantilever. Only accurate knowledge of the relative size of the in-plane dimensions of the cantilever is needed in this computation. We use this pair of results in the calibration of a variety of rectangular and non-rectangular cantilevers. We observe an average difference between the Sader and thermal motion values of cantilever stiffness of 10%.

Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition

We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. The diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees C without thermal annealing and allowing the integration with standard silicon processes. Due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between Ge and Si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial Ge films. The diode with a responsivity of 0.23 A/W at 1.55 mu m wavelength and a bulk dark current density of 10 mA/cm(2) is demonstrated. These diodes with high performances and full compatibility with the CMOS processes enable monolithically integrating microphotonics and microelectronics on the same chip.

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.