Design and analysis of integrated optic quadrature phase shift keying modulator

Quadrature phase shift keying (QPSK) is one of the most popular modulation schemes in coherent optical communication systems for data rates in excess of 40 Gbps because of its high spectral efficiency. This paper proposes a simple method of implementing a QPSK modulator in integrated optic (IO) domain. The QPSK modulator is realized using standard IO components, such as Y-branches and electro-optic modulators (EOMs). Design optimization of EOM is carried out considering the fabrication constraints, miniaturization aspects, and simplicity. Also, the interdependency between electrode length, operating voltage, and electrode gap of an EOM has been captured in the form of a family of curves. These plots enable designing of EOMs for custom requirements. An innovative approach has been adopted in demonstrating the operation of IO QPSK modulator in terms of phase data extracted from beam propagation model. The results obtained by this approach have been verified using the conventional interferometric approach. The operation of the proposed IO QPSK modulator is experimentally demonstrated. The design of IO QPSK modulator is taken up as a part of a broader scheme that aims at generation of QPSK modulated microwave signal based on optical heterodyning. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)

OTDM network processing using all-optical and electro-optical devices

The current optical communications network consists of point-to-point optical transmission paths interconnected with relatively low-speed electronic switching and routing devices. As the demand for capacity increases, then higher speed electronic devices will become necessary. It is however hard to realise electronic chip-sets above 10 Gbit/s, and therefore to increase the achievable performance of the network, electro-optic and all-optic switching and routing architectures are being investigated. This thesis aims to provide a detailed experimental analysis of high-speed optical processing within an optical time division multiplexed (OTDM) network node. This includes the functions of demultiplexing, 'drop and insert' multiplexing, data regeneration, and clock recovery. It examines the possibilities of combining these tasks using a single device. Two optical switching technologies are explored. The first is an all-optical device known as 'semiconductor optical amplifier-based nonlinear optical loop mirror' (SOA-NOLM). Switching is achieved by using an intense 'control' pulse to induce a phase shift in a low-intensity signal propagating through an interferometer. Simultaneous demultiplexing, data regeneration and clock recovery are demonstrated for the first time using a single SOA-NOLM. The second device is an electroabsorption (EA) modulator, which until this thesis had been used in a uni-directional configuration to achieve picosecond pulse generation, data encoding, demultiplexing, and 'drop and insert' multiplexing. This thesis presents results on the use of an EA modulator in a novel bi-directional configuration. Two independent channels are demultiplexed from a high-speed OTDM data stream using a single device. Simultaneous demultiplexing with stable, ultra-low jitter clock recovery is demonstrated, and then used in a self-contained 40 Gbit/s 'drop and insert' node. Finally, a 10 GHz source is analysed that exploits the EA modulator bi-directionality to increase the pulse extinction ratio to a level where it could be used in an 80 Gbit/s OTDM network.

Cost-effective broadband GaAs IQ modulator array for long-reach OFDM-PONs

A novel modulator array integrating eight GaAs electro-optic IQ modulators is characterized and tested over long-reach direct-detected multi-band OFDM-PONs. The GaAs IQ modulators present > 22 GHz bandwidth with 3V Vpi, being suitable for a 100-km 40-Gb/s OOFDM-PON supporting up to 1024 users.

Polarization dependent photorefractive amplitude modulation production in MgO:LiNbO 3 phase modulators

We present experimental and theoretical results of the intensity dependence of residual amplitude modulation (RAM) production in electro-optic phase modulators. By utilizing the anisotropy of the medium, we show that RAM has a photorefractive origin.

Two-channel waveguide modulator based on surface wave propagating in a semiconductor-metal thin-film structure

The results of theoretical investigations of two-channel waveguide modulator based on Surface Wave (SW) propagation are presented. The structure studied consists of two n-type semiconductor waveguide channels separated from each other by a dielectric gap and coated by a metal. The SW propagates at the semiconductor-metal interface across an external magnetic field which is parallel to the interface. An external dc voltage is applied to the metal surface of one channel to provide a small phase shift between two propagating modes. In a coupled mode approximation, two possible regimes of operation of the structure, namely as a directional coupler and as an electro-optical modulator, are considered. Our results suggest new applications in millimeter and submillimeter wave solid-state electronics and integrated optics.

Effect of polymer concentration on stabilized large-tilt-angle flexoelectro-optic switching

In this letter, the uniform lying helix (ULH) liquid crystal texture, required for the flexoelectro-optic effect, is polymer stabilized by the addition of a small percentage of reactive mesogen to a high-tilt-angle (φ>60°) bimesogenic chiral nematic host. The electro-optic response is measured for a range of reactive mesogen concentration mixtures, and compared to the large-tilt-angle switch of the pure chiral nematic mixture. The optimum concentration of reactive mesogen, which is found to provide ample stabilization of the texture with minimal impact on the electro-optic response, is found to be approximately 3%. Our results indicate that polymer stabilization of the ULH texture using a very low concentration of reactive mesogen is a reliable way of ruggedizing flexoelectro-optic devices without interfering significantly with the electro-optics of the effect, negating the need for complicated surface alignment patterns or surface-only polymerization. The polymer stabilization is shown to reduce the temperature dependence of the flexoelectro-optic response due to "pinning" of the chiral nematic helical pitch. This is a restriction of the characteristic thermochromic behavior of the chiral nematic. Furthermore, selection of the temperature at which the sample is ultraviolet cured allows the tilt angle to be optimized for the entire chiral nematic temperature range. The response time, however, remains more sensitive to operating temperature than curing temperature. This allows the sample to be cured at low temperature and operated at high temperature, providing simultaneous optimization of these two previously antagonistic performance aspects. © 2006 American Institute of Physics.

Double refraction and reflection of sequential crystal interfaces with arbitrary orientation of the optic axis and application to optimum design

The general formulation of double refraction or internal double reflection for any directions of incidence and arbitrary orientation of the optic axis in a uniaxial crystal is analysed in terms of Huygens' principle. Then double refraction and double reflection along the sequential interfaces in a crystal are discussed. On this basis, if the parameters of the interface are chosen appropriately, the range of angular separation between the ordinary ray and extraordinary ray can be much greater, It is useful for crystal element design. Finally, as an example, an optimum design of the Output end interface for a 2 x 2 electro-optic switch is given.

Time domain synthesis of electro-optical birefringent system for optical waveform generation

In this paper is described a novel technique for producing an electro-optical intensity synthesizer which can generate different periodic time domain waveforms through only sine or cosine wave applied-voltages. The synthesizer presented here consists of a series of stages between two polarizers, with each stage consisting of an electro-optic element and a compensator. Every electro-optical element has the same applied-voltage function but different azimuth angles and ratios between the longitudinal and transverse lengths. The main principle is the synthesis of an electro-optic effect and a polarization interference effect in the time domain. This technique is based on an expanded Fourier positive-direction searching algorithm, which can not only simplify the calculation process but also produces many choices of structural parameters for different waveforms generation. A three-stage synthesis of an electro-optical birefringent system for continuous square waveform is undertaken to prove the principle.

Laser diode array side-pumped acousto-optic induced unidirectional operation Q-switched Nd : YAG slab ring laser

A laser-diode array (LDA) side-pumped Nd:YAG slab ring laser is described that incorporates a prism-shaped acousto-optic modulator to enforce unidirectional operation and Q-switching. When pumped by the maximum power of 50 W, Q-switched energies of 3.6 mJ and 50 ns duration, corresponding to a peak power of 72 kW, are obtained. (C) 1999 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(99)01306-9].

高功率激光装置前端系统激光脉冲的时间整形及修正技术

针对激光惯性约束聚变实验研究对高功率激光驱动器前端系统复杂时间形状种子激光脉冲的需求, 应用孔径耦合带状线集成波导整形系统设计了满足需要的前端整形激光脉冲。用一种新方法精确计算了孔径耦合带状线电脉冲整形器的耦合系数和孔径宽度的数值关系, 并针对高衬比度整形激光脉冲的需求, 提出了高衬比度双极型集成波导整形系统方案。由该系统可以得到100 ps脉冲前沿、1～3 ns脉冲宽度可调、高衬比度(大于100∶1)、光滑无纹波调制、可精确满足神光II八路及第九路装置需求的前端整形激光脉冲。

光谱色散后的相位调制光束衍射特性研究

用数值方法研究了激光驱动器系统中使用光谱色散平滑单元后光束的衍射特性、模拟结果表明，光谱色散会使光束衍射光斑变大，近场空间强度均匀性改善，而远场光斑内部存在光强接近于均匀分布的区域．进一步分析了光谱色散平滑单元中相位调制器的调制深度、调制频率及光栅色散系数等主要元件参数对光束传输特性的影响，发现在一定情况下光斑内部会出现较强的强度调制。

A novel butt-joint scheme for the preparation of electro-absorptive lasers

A 1.55 mu m InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically integrated with a distributed feedback laser (DFB) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. The threshold current of 25 mA and an extinction ratio of more than 30 dB are obtained by using the novel structure. The beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the InGaAsP active region. The capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pF.

Offset quantum-well method for tunable distributed Bragg reflector lasers and electro-absorption modulated distributed feedback lasers

A two-section offset quantum-well structure tunable laser with a tuning range of 7 nm was fabricated using offset quantum-well inethod. The distributed Bragg reflector （DBR） was realized just by selectively wet etching the multiquantum-well （MQW） layer above the quaternary lower waveguide. A threshold current of 32 mA and an output power of 9 mW at 100 mA were achieved. Furthermore, with this offset structure method, a distributed feedback （DFB） laser was integrated with an electro-absorption modulator （EAM）, which was capable of producing 20 dB of optical extinction.

Thermally Stable Guest-Host Polyetherketone Poled Polymer for Electro-Optical Applications

The high glass transition temperature polymer polyetherketone doped with disperse red 13 (DR13/PEK-c) has been prepared by the spin-coating method. Through in situ second-harmonic generation, the corona poling temperature was optimized by measuring the temperature dependence of the in situ second-harmonic generation signal intensity under the poling electric field. The linear electro-optic coefficients of the poled polymer films have been determined at 632.8 nm by using a simple interferometric technique. The polymer system was measured after 13 000 h, and found that it remained at 80% of its initial value.

Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

We fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (> 40dB) and low capacitance (C <0.6pF) which can achieve an ultra-high frequency(> 10GHz). The device is be used in 10Gbps optical time division multiplex (OTDM) system as a signal generator.