Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition

Substantial amount of fixed charge present in most of the alternative gate dielectrics gives rise to large shifts in the flat-band voltage (VFB) and charge trapping and de-trapping causes hysterectic changes on voltage cycling. Both phenomena affect stable and reliable transistor operation. In this paper we have studied for the first time the effect of post-metallization hydrogen annealing on the C-V curve of MOS capacitors employing zirconia, one of the most promising gate dielectric. Samples were annealed in hydrogen ambient for up to 30 minutes at different temperatures ranging from room temperature to 400°C. C-V measurements were done after annealing at each temperature and the hysteresis width was calculated from the C-V curves. A minimum hysteresis width of ∼35 mV was observed on annealing the sample at 200°C confirming the excellent suitability of this dielectric

Solving a part classification problem using simulated annealing-like hybrid

Part classification and coding is still considered as laborious and time-consuming exercise. Keeping in view, the crucial role, which it plays, in developing automated CAPP systems, the attempts have been made in this article to automate a few elements of this exercise using a shape analysis model. In this study, a 24-vector directional template is contemplated to represent the feature elements of the parts (candidate and prototype). Various transformation processes such as deformation, straightening, bypassing, insertion and deletion are embedded in the proposed simulated annealing (SA)-like hybrid algorithm to match the candidate part with their prototype. For a candidate part, searching its matching prototype from the information data is computationally expensive and requires large search space. However, the proposed SA-like hybrid algorithm for solving the part classification problem considerably minimizes the search space and ensures early convergence of the solution. The application of the proposed approach is illustrated by an example part. The proposed approach is applied for the classification of 100 candidate parts and their prototypes to demonstrate the effectiveness of the algorithm. (C) 2003 Elsevier Science Ltd. All rights reserved.

Out of equilibrium plasticity dynamics and the annealing of supersolidity in solid He-4

We present a numerical study of a continuum plasticity field coupled to a Ginzburg-Landau model for superfluidity. The results suggest that a supersolid fraction may appear as a long-lived transient during the time evolution of the plasticity field at higher temperatures where both dislocation climb and glide are allowed. Supersolidity, however, vanishes with annealing. As the temperature is decreased, dislocation climb is arrested and any residual supersolidity due to incomplete annealing remains frozen. Our results may provide a resolution of many perplexing issues concerning a variety of experiments on bulk solid He-4.

Catches per unit of effort of bigeye tuna: a new analysis with regression trees and simulated annealing

ENGLISH: We analyzed catches per unit of effort (CPUE) from the Japanese longline fishery for bigeye tuna (Thunnus obesus) in the central and eastern Pacific Ocean (EPO) with regression tree methods. Regression trees have not previously been used to estimate time series of abundance indices fronl CPUE data. The "optimally sized" tree had 139 parameters; year, month, latitude, and longitude interacted to affect bigeye CPUE. The trend in tree-based abundance indices for the EPO was similar to trends estimated from a generalized linear model and fronl an empirical model that combines oceanographic data with information on the distribution of fish relative to environmental conditions. The regression tree was more parsimonious and would be easier to implement than the other two nl0dels, but the tree provided no information about the nlechanisms that caused bigeye CPUEs to vary in time and space. Bigeye CPUEs increased sharply during the mid-1980's and were more variable at the northern and southern edges of the fishing grounds. Both of these results can be explained by changes in actual abundance and changes in catchability. Results from a regression tree that was fitted to a subset of the data indicated that, in the EPO, bigeye are about equally catchable with regular and deep longlines. This is not consistent with observations that bigeye are more abundant at depth and indicates that classification by gear type (regular or deep longline) may not provide a good measure of capture depth. Asimulated annealing algorithm was used to summarize the tree-based results by partitioning the fishing grounds into regions where trends in bigeye CPUE were similar. Simulated annealing can be useful for designing spatial strata in future sampling programs. SPANISH: Analizamos la captura por unidad de esfuerzo (CPUE) de la pesquería palangrera japonesa de atún patudo (Thunnus obesus) en el Océano Pacifico oriental (OPO) y central con métodos de árbol de regresión. Hasta ahora no se han usado árboles de regresión para estimar series de tiempo de índices de abundancia a partir de datos de CPUE. EI árbol de "tamaño optimo" tuvo 139 parámetros; ano, mes, latitud, y longitud interactuaron para afectar la CPUE de patudo. La tendencia en los índices de abundancia basados en árboles para el OPO fue similar a las tendencias estimadas con un modelo lineal generalizado y con un modelo empírico que combina datos oceanográficos con información sobre la distribución de los peces en relación con las condiciones ambientales. EI árbol de regresión fue mas parsimonioso y seria mas fácil de utilizar que los dos otros modelos, pero no proporciono información sobre los mecanismos que causaron que las CPUE de patudo valiaran en el tiempo y en el espacio. Las CPUE de patudo aumentaron notablemente a mediados de los anos 80 y fueron mas variables en los extremos norte y sur de la zona de pesca. Estos dos resultados pueden ser explicados por cambios en la abundancia real y cambios en la capturabilidad. Los resultados de un arbal de regresión ajustado a un subconjunto de los datos indican que, en el OPO, el patudo es igualmente capturable con palangres regulares y profundos. Esto no es consistente con observaciones de que el patudo abunda mas a profundidad e indica que clasificación por tipo de arte (palangre regular 0 profundo) podría no ser una buena medida de la profundidad de captura. Se uso un algoritmo de templado simulado para resumir los resultados basados en el árbol clasificando las zonas de pesca en zonas con tendencias similares en la CPUE de patudo. El templado simulado podría ser útil para diseñar estratos espaciales en programas futuros de muestreo. (PDF contains 45 pages.)

Modelagem e otimização de experimentos para o tratamento térmico de recozimento: um estudo com o algoritmo simulated annealing

Esta dissertação apresenta um estudo da modelagem de experimentos aplicados a um processo industrial de tratamento térmico. A motivação deste trabalho surgiu diante das dificuldades associadas aos processos de recozimento industrial de aços do tipo baixa liga, na tentativa de encontrar temperaturas nas quais as durezas superficiais dos aços atingissem valores suficientemente baixos, adequados para etapas posteriores de fabricação, em especial a usinagem. Inicialmente forem realizados diversos experimentos com diferentes aços, onde a dureza superficial é obtida em função da temperatura de recozimento e dos teores de carbono e silício das amostras utilizadas. Em seguida propôs-se um modelo quadrático para modelar a dureza superficial como função dessas três variáveis. A estimação de parâmetros do modelo proposto foi realizada com o emprego do algoritmo Simulated Annealing, uma meta-heurística para otimização global que procura imitar o processo de recozimento de um material sólido. Finalmente, usando-se o modelo proposto, foi resolvido o chamado problema inverso, o qual consiste na estimação da temperatura de recozimento em função dos teores de carbono e silício e da dureza desejada.

Effects of gamma irradiation and air annealing on Yb-doped YAlO3 single crystals

The effects of gamma irradiation on as-grown 5 at% Yb:YAlO3 (YAP) and air annealing on gamma-irradiated 5 at% Yb: YAP have been studied by the difference in the absorption spectra before and after treatment. The gamma irradiation and air annealing led to opposite changes of the absorption properties of the Yb: YAP crystal. After air annealing, the gamma-irradiation effects were totally removed over the wavelength range 390-800 nm and the concentrations of Fe3+ and Yb3+ were slightly increased. For the first time, the gamma-irradiation-induced valence changes between Yb3+ and Yb2+ ions in Yb: YAP crystals have been observed. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of gamma-irradiation and air annealing on Yb-doped Y3Al5O12 single crystal

The effects of gamma-irradiation on the air-annealed 10 at.% Yb:Y3Al5O12 (YAG) and air annealing on the gamma-irradiated 10at.% Yb:YAG have been studied by the difference absorption spectra before and after treatment. The gamma-irradiation and air annealing led to opposite changes of the absorption properties of the Yb:YAG crystal. After air annealing, the gamma-irradiation induced centers were totally removed and the concentration of Fe3+ and Yb3+ were lightly increased. For the first time, the gamma-irradiation induced valence changes between Yb3+ and Yb2+ ions in Yb:YAG crystals have been observed. (C) 2007 Elsevier B.V. All rights reserved.

Influences of annealing on residual stress and structure of HfO2 films

HfO2 Elms are deposited on BK7 glass substrates by electron beam evaporation. The influences of annealing between 100 degrees C and 400 degrees C on residual stresses and structures of HfO2 films are studied. It is found that little differences of spectra, residual stresses and structures are obtained after annealing at lower temperatures. After annealing at higher temperatures, the spectra shift to short wavelength, the residual stress increases with the increasing annealing temperature. At the same time, the crystallite size increases and interplanar distance decreases. The variations of optical spectra and residual stress correspond to the evolutions of structures induced by annealing.

COMPARISON OF MILLISECOND ANNEALING OF B IMPLANTS AND ISOTHERMAL ANNEALING FOR TIMES OF A FEW SECONDS.

The annealing behaviour of B implants in the millisecond time regime using a combination of swept line beam and background heating is compared with isothermal annealing with heating cycles of a few seconds. Carrier concentration profiles show that under annealing conditions which restrict diffusion, millisecond processing gives higher activation of B implants than isothermal heating. Transmission electron microscopy shows that millisecond annealing also results in a lower defect density.

RESIDUAL DEFECTS FOLLOWING RAPID ANNEALING OF BORON IMPLANTED SILICON WITH AND WITHOUT PREAMORPHISATION BY SILICON IMPLANTATION.

Implants of boron into silicon which has been made amorphous by silicon implantation have a shallower depth profile than the same implants into silicon. This results in higher activation and restricted diffusion of the B implants after annealing, and there are also significant differences in the microstructure after annealing compared with B implants into silicon. Rapid isothermal heating with an electron beam and furnace treatments are used to characterize the defect structure as a function of time and temperature. Defects are seen to influence the diffusion of non-substitutional boron.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.

Effects of buffer layer properties and annealing process on bulk heterojunction morphology and organic solar cell performance

The performance of polymer-fullerene bulk heterojunction (BHJ) solar cells is strongly dependent on the vertical distribution of the donor and acceptor regions within the BHJ layer. In this work, we investigate in detail the effect of the hole transport layer (HTL) physical properties and the thermal annealing on the BHJ morphology and the solar cell performance. For this purpose, we have prepared solar cells with four distinct formulations of poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) buffer layers. The samples were subjected to thermal annealing, applied either before (pre-annealing) or after (post-annealing) the cathode metal deposition. The effect of the HTL and the annealing process on the BHJ ingredient distribution - namely, poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) - has been studied by spectroscopic ellipsometry and atomic force microscopy. The results revealed P3HT segregation at the top region of the films, which had a detrimental effect on all pre-annealed devices, whereas PCBM was found to accumulate at the bottom interface. This demixing process depends on the PEDOT:PSS surface energy; the more hydrophilic the surface the more profound is the vertical phase separation within the BHJ. At the same time those samples suffer from high recombination losses as evident from the analysis of the J-V measurements obtained in the dark. Our results underline the significant effect of the HTL-active and active-ETL (electron transport layer) interfacial composition that should be taken into account during the optimization of all polymer-fullerene solar cells. © 2012 The Royal Society of Chemistry.

Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing

We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering process may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.

Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers

Rapid thermal annealing (RTA) has been demonstrated as an important way to improve the crystal quality of GaInNAs(Sb)/GaAs quantum wells. However little investigation has been made into their application in laser growth, especially at a wavelength of 1.55 mu m. When a GaAs-based laser is grown, AlGaAs is usually used for cladding layers. The growth of the p-cladding layer usually takes 30-45 min at a growth temperature higher than that of the GaInNAs(Sb) active region, which affects the material quality. To investigate this effect, various post-growth annealing processes were performed to simulate this process. Great enhancement of the PL intensity was obtained by a two-step process which consisted of annealing first at 700 degrees C for 60 s and then at 600 degrees C for 45 min. We transferred this post-growth annealing to in situ annealing. Finally, a GaInNAsSb laser was grown with a 700 degrees C in situ annealing process. Continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength beyond 1.55 mu m was realized for the first time.