A Simulation Based Study and Analysis of Double Gate Tunnel FET Performance for Low Stand-By Power Applications

The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.

Transport properties and colossal magnetoresistance in epitaxial La0.67Cd0.33MnO3 thin film

An optimal composition of La0.67Cd0.33MnO3 was synthesized by ceramic route. The compound crystallized in a rhombohedral structure with lattice parameters a = 5.473(4) Å and α = 60°37′. Resistivity measurement showed an insulator-to-metal transition coupled with a ferromagnetic transition of around 255 K. Epitaxial thin films were fabricated on the LaAlO3 (100) substrate by a pulsed laser deposition technique. The psuedocubic lattice parameter a of the film is 3.873(4) Å. The insulator-to-metal transition of the film was observed at 250 K which is comparable with the bulk value. The film was ferromagnetic below this temperature. Magnetoresistance defined as ΔR/R0 = (RH−R0)/R0 was over −86% near the insulator-to-metal transition temperature of 240 K at 6 T magnetic field and over-30% at relatively low fields of 1 T. No magnetoresistance was observed at low temperatures in the film unlike in the polycrystalline sample, where about a 40% decrease in resistance was observed on applying 6 T magnetic field due to the spin dependent scattering at the grain boundaries.

Effect of particle size on the giant magnetoresistance of La0.7Ca0.3MnO3

Effect of particle size on the electron transport and magnetic properties of La0.7Ca0.3MnO3 has been investigated. While the ferromagnetic Tc, low field magnetic susceptibility, and insulator‐metal transition are markedly affected by the particle size, the maximum magnetoresistance exhibited by the samples near Tc is not sensitive to the particle size. However, the magnetoresistance at 4.2 K increases with decrease in particle size, suggesting a substantial contribution by the grain boundaries. Preliminary measurements on La0.7Sr0.3MnO3 samples of different particle sizes also corroborate the above conclusions.

Colossal magnetoresistance in epitaxial La(1-x-y)NayMnO3 thin film

We have synthesized La0.83Na0.11MnO2.93 by heating La2O3 and MnCO3 in NaCl melt at 900 °C. The exact composition was arrived by analyzing each ion by an independent chemical method. The compound crystallized in a rhombohedral structure and showed an insulator-to-metal transition at 290 K. Epitaxial thin films were fabricated on LaAlO3 (100) using a pulsed laser deposition technique. The film also showed an insulator-to-metal transition at 290 K. Magnetoresistance [ΔR/R0 = (RH−R0)/R0] was −71% near the insulator-to-metal transition temperature of 290 K at 6 T magnetic field.

Force measurements on hypersonic waveriders in the IISc hypersonic shock tunnel HST2

The drag and lift coefficients for a viscous optimized Mach 6 conical waverider has been measured using an accelerometer force balance system in the IISc hypersonic shock tunnel. A rubber bush placed in between the waverider model and the steel sting ensures unrestrained motion to the model during shock tunnel testing (500 mu s). Two accelerometers mounted on the model are used to measure the model accelerations in the axial and normal directions. The measured value of lift to drag ratio at zero angle of incidence for the IISc conical waverider with viscous optimized leading edge is 2.149, which compares well with the value reported in the open literature (Anderson et al 1991) for similar class of waveriders designed for a flight Mach number of 6. The details of the experimental study along with illustrative numerical results are discussed in this paper.

A novel free floating accelerometer force balance system for shock tunnel applications

In order to overcome the interference of the model mounting system with the external aerodynamics of the body during shock tunnel testing, a new free floating internally mountable balance system that ensures unrestrained model motion during testing has been designed, fabricated and tested. Minimal friction ball bearings are used for ensuring the free floating condition of the model during tunnel testing. The drag force acting on a blunt leading edge flat plate at hypersonic Mach number has been measured using the new balance system. Finite element model (FEM) and CFD are exhaustively used in the design as well as for calibrating the new balance system. The experimentally measured drag force on the blunt leading edge flat plate at stagnation enthalpy of 0.7 and 1.2 MJ/kg and nominal Mach number of 5.75 matches well with FEM results. The concept can also be extended for measuring all the three fundamental aerodynamic forces in short duration test facilities like free piston driven shock tunnels.

Effect of ``dipolar-biasing'' on the tunability of tunneling magnetoresistance in transition metal oxide systems

We observe an unusual tunneling magnetoresistance (TMR) phenomenon in a composite of La2/3Sr1/3MnO3 with CoFe2O4 where the TMR versus applied magnetic field loop suggests a ``negative coercive field.'' Tracing its origin back to a ``dipolar-biasing'' of La2/3Sr1/3MnO3 by CoFe2O4, we show that the TMR of even a single composite can be tuned continuously so that the resistance peak or the highest sensitivity of the TMR can be positioned anywhere on the magnetic field axis with a suitable magnetic history of the sample. This phenomenon of an unprecedented tunability of the TMR should be present in general in all such composites. (C) 2012 American Institute of Physics.http://dx.doi.org/10.1063/1.4731206]

Investigations on supersonic combustion in a combustion-driven shock tunnel

This article reports experimental results on supersonic combustion in a new facility. The facility is a combustion-driven shock tunnel, which is cheaper to build than the facilities in which such experiments are carried out conventionally. The observation region is a zone between two parallel flat plates with a 33 degrees wedge attached to the upstream end of the bottom plate. Gaseous hydrogen is injected at an angle of 45 degrees into an oncoming supersonic flow of Mach 2 (approximate) from a port on the bottom plate. The resulting flow field is visualized by a high speed camera in a dark background. Three different test gases, namely nitrogen, air, and oxygen-rich air are used, and the results are compared. A distinct luminosity due to combustion for oxygen-containing test gases is observed. Heat-transfer rates on a probe placed at the downstream end of the observation region and midway between the parallel plates are measured and compared for the three cases. Wall static pressure at 28 mm downstream of the injection port on the bottom plate is also presented.

Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface

Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read heads. We show that a colossal nonsaturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field, reaching nearly 10 000% at 8 T, thus surpassing many known nonmagnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems an attractive candidate for on-chip magnetic field sensing.