Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface
Data(s) |
01/08/2012
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Resumo |
Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read heads. We show that a colossal nonsaturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field, reaching nearly 10 000% at 8 T, thus surpassing many known nonmagnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems an attractive candidate for on-chip magnetic field sensing. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/45145/1/Phy_RevB_2012.pdf Aamir, MA and Goswami, Srijit and Baenninger, Matthias and Tripathi, Vikram and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2012) Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface. In: PHYSICAL REVIEW B, 86 (8). |
Publicador |
AMER PHYSICAL SOC |
Relação |
http://dx.doi.org/10.1103/PhysRevB.86.081203 http://eprints.iisc.ernet.in/45145/ |
Palavras-Chave | #Physics |
Tipo |
Journal Article PeerReviewed |