923 resultados para Tip-enhanced Raman scattering
Resumo:
Stokes and anti-Stokes SERRS intensity fluctuations were observed from a roughened silver electrode immersed in diluted solutions of Brilliant Green (BG), a behaviour linked to single-molecule events. The distributions of the anti-Stokes to Stokes ratios were obtained and their shape showed a strong dependence on the applied potential.
Resumo:
The interaction of emeraldine base (PANI-EB) with silver and gold colloids was probed by using Surface-Enhanced Resonance Raman Scattering (SERRS) at 3 different exciting radiations. Due to the great sensitivity of SERRS technique the detection limit of PANI-EB concentration was ca. 2 x 10(-7) mol L(-1) in Ag and Au colloidal suspensions. The UV-vis-NIR spectra of metal colloids in function of PANI-EB concentrations showed that gold colloids present a higher degree of aggregation than silver colloids. SERRS of PANI-EB on metal colloids allowed the study of the polymeric species formed primarily on the metallic surface. The polymer formed after the adsorption of PANI-EB on metallic nanoparticles is strongly dependent on the nature of the metal colloids. The oxidation of PANI-EB to pernigraniline occurred for silver colloids, while a doping process of PANI-EB on Au nanoparticles was evidenced through the observation of the characteristic SERRS spectrum of emeraldine salt at 1064nm.
Resumo:
Surface-enhanced resonance Raman scattering (SERRS) is used for single-molecule detection from spatially resolved 1-mum(2) sections of a Langmuir-Blodgett (LB) monolayer deposited onto a Ag film. The target molecule, his (benzimidazo) thioperylene (BZP), is dispersed in an arachidic acid monomolecular layer containing one BZP molecule per mum(2) which is also the probing area of the Raman microscope. For concentrated samples (attomole quantities in the field of view), average SERRS, surface-enhanced fluorescence (SEF), and Raman imaging, including line mapping and global images at different temperatures, were recorded. Single-molecule SERRS spectra, obtained using an LB monolayer, present changes in bandwidth and relative intensities, highlighting the properties of single-molecule SERRS that are lost in average SERRS measurements of mixed LB monolayers obtained at the same temperatures. Also, the dilute system phenomenon of blinking is discussed with regard to results obtained from LB monolayers. The dilution process used in the single-molecule LB SERRS work is independently supported by fluorescence results obtained from very dilute solutions with monomer concentrations down to 10(-12) M.
Resumo:
The vibrational spectra of palladium phthalocyanine (PdPc) evaporated thin solid films are reported, including the resonance Raman scattering, surface-enhanced resonance Raman scattering (SERRS) and SERRS mapping of the film surface using micro-Raman spectroscopy with 633 nm laser radiation. SERRS of PdPc was obtained by evaporating an overlayer of Ag nanoparticles on to the PdPc film on glass. The SERRS enhancement factor is estimated as similar to10(4) with reference to PdPc evaporated films on glass. The molecular organization of the PdPc evaporated films was probed using transmission and reflection-absorption infrared spectra. It was established that a random molecular distribution found in PdPc evaporated films is independent of temperature. No evidence of thermal degradation due to thermal annealing was found in the films. Electronic absorption and emission spectra are also discussed. Copyright (C) 2002 John Wiley Sons, Ltd.
Resumo:
The surface enhanced Raman scattering effect has shown immense potential for detecting trace amounts of explosive vapor molecules. To date, efforts to produce a commercially available, reliable SERS sensor have been impeded by an inability to separate the electromagnetic enhancement produced by the metallic nanostructure from other signal enhancing effects. Here, we show a new Raman sensor that uses surface acoustic waves (SAWs) to produce controllable surface structures on gold films deposited on LiNbO3 substrates that modulate the Raman signal of a target compound (thiophenol) adsorbed on the films. We demonstrate that this sensor can dynamically control the Raman signal simply by changing the SAW’s amplitude, allowing the Raman signal enhancement factor to be directly measured with no variation in the concentration of the target compound. The physically adsorbed molecules can be removed from the sensor without physical cleaning or damage, making it possible to reuse it for real-time Raman detection.
Resumo:
Polycrystalline powders of Ba1-xCaxBi4Ti4O15 (where x = 0, 0.25, 0.50, 0.75 and 1) were prepared via the conventional solid-state reaction route. X-ray diffraction (XRD) and Raman scattering techniques have been employed to probe into the structural changes on changing x. XRD analyses confirmed the formation of monophasic bismuth layered structure of all the above compositions with an increase in orthorhombic distortion with increase in x. Raman spectra revealed a redshift in A(1g) peak and an increase in the B-2g/B-3g splitting with increasing Ca content. The average grain size was found to increase with increasing x. The temperature of the maximum dielectric constant (T-m) increased linearly with increasing Ca-content whereas the diffuseness of the phase transition was found to decrease with the end member CaBi4Ti4O15 showing a frequency independent sharp phase transition around 1048 K. Ca doping resulted in a decrease in the remnant polarization and an increase in the coercive field. Ba0.75Ca0.25Bi4Ti4O15 ceramics showed an enhanced piezoelectric coefficient d(33) of 15 pC N-1 at room temperature. Low values of dielectric losses and tunability of temperature coefficient of dielectric constant (tau(epsilon)) in the present solid-solution suggest that these compounds can be of potential use in microwave dielectrics at high temperatures. (C) 2012 Elsevier B.V. All rights reserved.
Resumo:
We report on stacking fault (SF) detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si(100) substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability (BP) model in the framework of linear-chain concept. Good agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 angstrom in the BP model.
Resumo:
Micro-Raman measurements were carried out to investigate the microstructure of amorphous silicon-nitrogen alloy (a-SiNx:H) samples with different N contents prepared by plasma enhanced chemical vapor deposition (PECVD). Resonant Raman effect was discovered by using 647.1- and 514.5-nm excitation wavelengths. The frequency of TO mode downshifts with increasing photon energy without varying its width, while LO mode expands to a great extent. The frequency-dependent shift of TO band is explained by heterogeneous structure model and quantum confinement model, and the width expansion of LO mode may be related to the overlapping of LA and LO bands. (C) 2001 Elsevier Science B.V. All rights reserved.
Resumo:
The microstructure, hydrogen bonding configurations and hydrogen content of high quality and stable hydrogenated amorphous silicon (a-Si:H) films prepared by a simple ''uninterrupted growth/annealing" plasma enhanced chemical vapor deposition technique have been investigated by Raman scattering and infrared absorption spectroscopy. The high stability a-Si:H films contain small amounts of a microcrystalline phase and not less hydrogen (10-16 at. %), particularly, the clustered phase hydrogen, Besides, the hydrogen distribution is very inhomogeneous. Some of these results are substantially distinct from those of conventional device-quality n-Si:H film or stable cr-Si:H films prepared by the other techniques examined to date. The stability of n-Si:H films appears to have no direct correlation with the hydrogen content or the clustered phase hydrogen concentration. The ideal n-Si:H network with high stability and low defect density is perhaps not homogeneous. (C) 1998 American Institute of Physics.
Resumo:
We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.
Resumo:
Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm(-1),which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev, 1.42ev, 1.47ev. Possible reason for these is suggested.
Resumo:
We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.
Resumo:
A new and facile method to prepare large-area silver-coated silicon nanowire arrays for surface-enhanced Raman spectroscopy (SERS)-based sensing is introduced. High-quality silicon nanowire arrays are prepared by a chemical etching method and used as a template for the generation of SERS-active silver-coated silicon nanowire arrays. The morphologies of the silicon nanowire arrays and the type of silver-plating solution are two key factors determining the magnitude of SERS signal enhancement and the sensitivity of detection; they are investigated in detail for the purpose of optimization.
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Catalytic degradation of organic dye molecules has attracted extensive attention due to their high toxicity to water resources. In this paper, we propose a novel method for the fabrication of uniform silver-coated ZnO nanowire arrays. The degradation of typical dye molecule rhodamine 6G (R6G), as an example, is investigated in the presence of the as-prepared silver-coated ZnO nanowire arrays. The experimental results show that such composite nanostructures exhibit high catalytic activity, and the reaction follows pseudo-first-order kinetics. Furthermore, these nanowire arrays are desirable SERS substrates for monitoring the catalytic degradation of dye molecules. Compared with traditional UV-visible spectroscopy, SERS technology can reflect more truly the catalytic degradation process occurring on the surface of the catalysts.
Resumo:
The shape-con trolled synthesis of micrometer- sized gold nanocoralline was simply realized via a wet-chemical approach. The as-prepared hierarchical gold nanocorallines (HGNs) on the solid substrate were initially applied in SERS analysis with 4-aminothiophenol (4-ATP) as the probe molecule. The HGN-modified glass substrate exhibits a higher SERS effect (one order of magnitude higher) than the aggregated gold nanoparticle (similar to 25 nm)-modified glass substrate.