Pilas de combustible de una sola camara, basadas en electrolitos de ceria dopada con gadolinia y operadas con metano y propano

La principal ventaja de las pilas de combustible de óxido sólido (SOFCs) de una sola cámara, frente a las bicamerales convencionales, es que permiten simplificar el diseño del dispositivo y operar con mezclas de hidrocarburos (metano, propano...) y aire, sin necesidad de separar ambos gases, por medio del uso de electrodos selectivos a la oxidación del combustible y reducción del oxidante. En el presente trabajo, se han fabricado monopilas soportadas sobre electrolitos de ceria dopada con gadolinia (GDC), de 200 ¿m de espesor, usando Ni-GDC como ánodo y LSC(La0.5Sr0.5CoO3-¿)-GDC-Ag2O como cátodo. Las propiedades eléctricas de la celda se determinaron en un reactor de una sola cámara, usando mezclas de metano + aire y propano + aire. Se investigó la influencia de la temperatura, de las presiones parciales del combustible y oxígeno, y de la velocidad de flujo total sobre el rendimiento de las pilas preparadas. Así, la densidad de potencia se incrementó fuertemente con el aumento de la temperatura, la velocidad de flujo total y la composición de hidrocarburo. Una vez se optimizaron los parámetros operacionales, la celda presentó unas densidades de potencia máximas de 70 y 320 mW/ cm2, operando con propano a 600ºC y con metano a 795ºC, respectivamente.

Un model per a la gestió cultural municipal : Les arts visuals locals en revisió

El treball desenvolupa en cinc capítols la recerca, l'estudi de dades i les conclusions de la hipòtesi de treball inicial: es possible implementar un nou programa d'arts visuals de qualitat a Rubí? A través de l'estudi detallat, l'anàlisi de dates quantitatives i qualitatives, les entrevistes a responsables de centres d'arts visuals de tota Catalunya i amb la realitat de gestió de les arts visuals del municipi de Rubí, es tracta d'arribar a unes conclusions que condueixen al plantejament d'un nou model de gestió per a l'Ajuntament de Rubí.

Materials selection for superheater tubes in municipal solid waste incineration plants

Corrosion reduces the lifetime of municipal solid waste incineration (MSWI) superheater tubes more than any other cause. It can be minimized by the careful selection of those materials that are most resistant to corrosion under operating conditions. Since thousands of different materials are already known and many more are developed every year, here the selection methodology developed by Prof. Ashby of the University of Cambridge was used to evaluate the performance of different materials to be used as MSWI superheater tubes. The proposed materials can operate at steam pressures and temperatures over 40 bars and 400ºC, respectively. Two case studies are presented: one makes a balanced selection between mechanical properties and cost per thermal unit; and the other focuses on increasing tube lifetime. The balanced selection showed that AISI 410 martensitic stainless steel (wrought, hard tempered) is the best candidate with a good combination of corrosion resistance, a relatively low price (0.83-0.92 e/kg) and a good thermal conductivity (23-27 W/m K). Meanwhile, Nitronic 50/XM-19 stainless steel is the most promising candidate for longterm selection, as it presents high corrosion resistance with a relatively low price (4.86-5.14 e/kg) compared to Ni-alloys.

Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach

We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration

Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory

A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise inducedby the diffusion of carriers through the semiconductor and the noise induced by the thermionicemission of carriers across the metal¿semiconductor interface. Closed analytical formulas arederived for the junction resistance, series resistance, and contributions to the net noise localized indifferent space regions of the diode, all valid in the whole range of applied biases. An additionalcontribution to the voltage-noise spectral density is identified, whose origin may be traced back tothe cross correlation between the voltage-noise sources associated with the junction resistance andthose for the series resistance. It is argued that an inclusion of the cross-correlation term as a newelement in the existing equivalent circuit models of Schottky diodes could explain the discrepanciesbetween these models and experimental measurements or Monte Carlo simulations.

Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors

Shot-noise suppression is investigated in nondegenerate diffusive conductors by means of an ensemble Monte Carlo simulator. The universal 1/3 suppression value is obtained when transport occurs under elastic collision regime provided the following conditions are satisfied: (i) The applied voltage is much larger than the thermal value; (ii) the length of the device is much greater than both the elastic mean free path and the Debye length. By fully suppressing carrier-number fluctuations, long-range Coulomb interaction is essential to obtain the 1/3 value in the low-frequency limit.

González et al. Reply

A Reply to the Comment by K. E. Nagaev

Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach

We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration

Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory

A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise inducedby the diffusion of carriers through the semiconductor and the noise induced by the thermionicemission of carriers across the metal¿semiconductor interface. Closed analytical formulas arederived for the junction resistance, series resistance, and contributions to the net noise localized indifferent space regions of the diode, all valid in the whole range of applied biases. An additionalcontribution to the voltage-noise spectral density is identified, whose origin may be traced back tothe cross correlation between the voltage-noise sources associated with the junction resistance andthose for the series resistance. It is argued that an inclusion of the cross-correlation term as a newelement in the existing equivalent circuit models of Schottky diodes could explain the discrepanciesbetween these models and experimental measurements or Monte Carlo simulations.

Theory of surface noise under Coulomb correlations between carriers and surface states

We present a theory of the surface noise in a nonhomogeneous conductive channel adjacent to an insulating layer. The theory is based on the Langevin approach which accounts for the microscopic sources of fluctuations originated from trapping¿detrapping processes at the interface and intrachannel electron scattering. The general formulas for the fluctuations of the electron concentration, electric field as well as the current-noise spectral density have been derived. We show that due to the self-consistent electrostatic interaction, the current noise originating from different regions of the conductive channel appears to be spatially correlated on the length scale correspondent to the Debye screening length in the channel. The expression for the Hooge parameter for 1/f noise, modified by the presence of Coulomb interactions, has been derived

Self-consistent theory of current and voltage noise in multimode ballistic conductors

Electron transport in a self-consistent potential along a ballistic two-terminal conductor has been investigated. We have derived general formulas which describe the nonlinear current-voltage characteristics, differential conductance, and low-frequency current and voltage noise assuming an arbitrary distribution function and correlation properties of injected electrons. The analytical results have been obtained for a wide range of biases: from equilibrium to high values beyond the linear-response regime. The particular case of a three-dimensional Fermi-Dirac injection has been analyzed. We show that the Coulomb correlations are manifested in the negative excess voltage noise, i.e., the voltage fluctuations under high-field transport conditions can be less than in equilibrium.