Quantum fluctuations stabilize skyrmion textures

We study the quantum spin waves associated to skyrmion textures. We show that the zero-point energy associated to the quantum spin fluctuations of a noncollinear spin texture produce Casimir-like magnetic fields. We study the effect of these Casimir fields on the topologically protected noncollinear spin textures known as skyrmions. In a Heisenberg model with Dzyalonshinkii-Moriya interactions, chosen so the classical ground state displays skyrmion textures, we calculate the spin-wave spectrum, using the Holstein-Primakoff approximation, and the associated zero-point energy, to the lowest order in the spin-wave expansion. Our calculations are done both for the single-skyrmion case, for which we obtain a discrete set of skyrmion bound states, as well as for the skyrmion crystal, for which the resulting spectrum gives the spin-wave bands. In both cases, our calculations show that the Casimir magnetic field contributes up to 10% of the total Zeeman energy necessary to delete the skyrmion texture with an applied field.

Rashba spin precession in a magnetic field

Spin precession due to Rashba spin-orbit coupling in a two-dimension electron gas is the basis for the spin field effect transistor, in which the overall perfect spin-polarized current modulation could be acquired. There is a prerequisite, however, that a strong transverse confinement potential should be imposed on the electron gas or the width of the confined quantum well must be narrow. We propose relieving this rather strict limitation by applying an external magnetic field perpendicular to the plane of the electron gas because the effect of the magnetic field on the conductance of the system is equivalent to the enhancement of the lateral confining potential. Our results show that the applied magnetic field has little effect on the spin precession length or period although in this case Rashba spin-orbit coupling could lead to a Zeeman-type spin splitting of the energy band.

MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications

The study of III-nitride materials (InN, GaN and AlN) gained huge research momentum after breakthroughs in the production light emitting diodes (LEDs) and laser diodes (LDs) over the past two decades. Last year, the Nobel Prize in Physics was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura for inventing a new energy efficient and environmental friendly light source: blue light-emitting diode (LED) from III-nitride semiconductors in the early 1990s. Nowadays, III-nitride materials not only play an increasingly important role in the lighting technology, but also become prospective candidates in other areas, for example, the high frequency (RF) high electron mobility transistor (HEMT) and photovoltaics. These devices require the growth of high quality III-nitride films, which can be prepared using metal organic vapour phase epitaxy (MOVPE). The main aim of my thesis is to study and develop the growth of III-nitride films, including AlN, u-AlGaN, Si-doped AlGaN, and InAlN, serving as sample wafers for fabrication of ultraviolet (UV) LEDs, in order to replace the conventional bulky, expensive and environmentally harmful mercury lamp as new UV light sources. For application to UV LEDs, reducing the threading dislocation density (TDD) in AlN epilayers on sapphire substrates is a key parameter for achieving high-efficiency AlGaNbased UV emitters. In Chapter 4, after careful and systematic optimisation， a working set of conditions, the screw and edge type dislocation density in the AlN were reduced to around 2.2×108 cm-2 and 1.3×109 cm-2 , respectively, using an optimized three-step process, as estimated by TEM. An atomically smooth surface with an RMS roughness of around 0.3 nm achieved over 5×5 µm 2 AFM scale. Furthermore, the motion of the steps in a one dimension model has been proposed to describe surface morphology evolution, especially the step bunching feature found under non-optimal conditions. In Chapter 5, control of alloy composition and the maintenance of compositional uniformity across a growing epilayer surface were demonstrated for the development of u-AlGaN epilayers. Optimized conditions (i.e. a high growth temperature of 1245 °C) produced uniform and smooth film with a low RMS roughness of around 2 nm achieved in 20×20 µm 2 AFM scan. The dopant that is most commonly used to obtain n-type conductivity in AlxGa1-xN is Si. However, the incorporation of Si has been found to increase the strain relaxation and promote unintentional incorporation of other impurities (O and C) during Si-doped AlGaN growth. In Chapter 6, reducing edge-type TDs is observed to be an effective appoach to improve the electric and optical properties of Si-doped AlGaN epilayers. In addition, the maximum electron concentration of 1.3×1019 cm-3 and 6.4×1018 cm-3 were achieved in Si-doped Al0.48Ga0.52N and Al0.6Ga0.4N epilayers as measured using Hall effect. Finally, in Chapter 7, studies on the growth of InAlN/AlGaN multiple quantum well (MQW) structures were performed, and exposing InAlN QW to a higher temperature during the ramp to the growth temperature of AlGaN barrier (around 1100 °C) will suffer a significant indium (In) desorption. To overcome this issue, quasi-two-tempeature (Q2T) technique was applied to protect InAlN QW. After optimization, an intense UV emission from MQWs has been observed in the UV spectral range from 320 to 350 nm measured by room temperature photoluminescence.

Hyperfine interactions in silicon quantum dots

A fundamental interaction for electrons is their hyperfine interaction (HFI) with nuclear spins. HFI is well characterized in free atoms and molecules, and is crucial for purposes from chemical identification of atoms to trapped ion quantum computing. However, electron wave functions near atomic sites, therefore HFI, are often not accurately known in solids. Here we perform an all-electron calculation for conduction electrons in silicon and obtain reliable information on HFI. We verify the outstanding quantum spin coherence in Si, which is critical for fault-tolerant solid state quantum computing.

Character of magnetic excitations in a quasi-one-dimensional antiferromagnet near the quantum critical points: Impact on magnetoacoustic properties

We report results of magnetoacoustic studies in the quantum spin-chain magnet NiCl(2)-4SC(NH(2))(2) (DTN) having a field-induced ordered antiferromagnetic (AF) phase. In the vicinity of the quantum critical points (QCPs) the acoustic c(33) mode manifests a pronounced softening accompanied by energy dissipation of the sound wave. The acoustic anomalies are traced up to T > T(N), where the thermodynamic properties are determined by fermionic magnetic excitations, the ""hallmark"" of one-dimensional (1D) spin chains. On the other hand, as established in earlier studies, the AF phase in DTN is governed by bosonic magnetic excitations. Our results suggest the presence of a crossover from a 1D fermionic to a three-dimensional bosonic character of the magnetic excitations in DTN in the vicinity of the QCPs.

Magnetotransport in a wide parabolic well superimposed with a superlattice

The electron properties of artificially disordered superlattices embedded in a wide AlGaAs parabolic well were investigated in a strong magnetic field. We demonstrated that in the extreme quantum limit the interlayer disorder results in formation of a new correlated phase. A nearly uniform electron distribution over the superlattice wells was found in a weak magnetic field. However, a nonuniform phase with partially localized electrons, representing well-developed fractional quantum Hall effect features, was observed in high magnetic field (at the filling factor v < 1). A distinct magnetic field-induced transition separates these two phases. (C) 2011 American Institute of Physics. [doi:10.1063/1.3576134]

Raman scattering of InSb quantum dots grown on InP substrates

In this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other type no capping was deposited after the InSb dot formation. We observe two peaks in the Raman spectra of the uncapped dot, while only one peak is observed in the Raman spectra of the capped dots. In the case of the uncapped dots the peaks are attributed to LO-like and TO-like vibration of completely relaxed InSb dots, in agreement with high resolution transmission electron microscopy photographs. The Raman spectra of the capped dot suggest a different strain state in the dot due to the capping layer.

Ordered structures in rotating ultracold Bose gases

Two-dimentional systems of trapped samples of few cold bosonic atoms submitted to strong rotation around the perpendicular axis may be realized in optical lattices and microtraps. We investigate theoretically the evolution of ground state structures of such systems as the rotational frequency Omega increases. Various kinds of ordered structures are observed. In some cases, hidden interference patterns exhibit themselves only in the pair correlation function; in some other cases explicit broken-symmetry structures appear that modulate the density. For N < 10 atoms, the standard scenario, valid for large sytems is absent, and is only gradually recovered as N increases. On the one hand, the Laughlin state in the strong rotational regime contains ordered structures much more similar to a Wigner molecule than to a fermionic quantum liquid. On the other hand, in the weak rotational regime, the possibility to obtain equilibrium states, whose density reveals an array of vortices, is restricted to the vicinity of some critical values of the rotational frequency Omega.

Steps in the hysteresis of a high spin molecule

We report the first observation of steps in the hysteresis loop of a high¿spin molecular magnet. We propose that the steps, which occur every 0.46 T, are due to thermally assisted resonant tunneling between different quantum spin states. Magnetic relaxation increases dramatically when the field is in the neighborhood of a step. A simple model accounts for the observations and predicts a value for the anisotropy barrier consistent with that inferred from the superparamagnetic blocking temperature

Quantum critical effects in mean-field glassy systems

We consider the effects of quantum fluctuations in mean-field quantum spin-glass models with pairwise interactions. We examine the nature of the quantum glass transition at zero temperature in a transverse field. In models (such as the random orthogonal model) where the classical phase transition is discontinuous an analysis using the static approximation reveals that the transition becomes continuous at zero temperature.

Galvanomagnetic effects in strongly doped p-Bi2Te3:Sn crystals

Magnetic field dependencies of Hall coefficient and magnetoresistivity are investigated in classical and quantizing magnetic fields in p-Bi2Te3 crystals heavily doped with Sn grown by Czochralsky method. Magnetic field was parallel to the trigonal axis C3. Shubnikov-de Haas effect and quantum oscillations of the Hall coefficient were measured at temperatures 4.2 K and 11 K. On the basis of the magnetic field dependence of the Hall coefficient a method of estimation of the Hall factor and Hall mobility using the Drabble- Wolf six ellipsoid model is proposed. Shubnikov-de Haas effect and quantum oscillations of the Hall coefficient were observed at 4.2 K and 11 K. New evidence for the existence of the narrow band of Sn impurity states was shown. This band is partly filled by electrons and it is overlapping with the valence states of the light holes. Parameters of the impurity states, their energy ESn - 15 meV, band broadening ¿<< k0T and localization radius of the impuritystate R - 30 Å were obtained.

Phenomenological models of holographic superconductors and hall currents

We study general models of holographic superconductivity parametrized by four arbitrary functions of a neutral scalar field of the bulk theory. The models can accommodate several features of real superconductors, like arbitrary critical temperatures and critical exponents in a certain range, and perhaps impurities or boundary or thickness effects. We find analytical expressions for the critical exponents of the general model and show that they satisfy the Rushbrooke identity. An important subclass of models exhibit second order phase transitions. A study of the specific heat shows that general models can also describe holographic superconductors undergoing first, second and third (or higher) order phase transitions. We discuss how small deformations of the HHH model can lead to the appearance of resonance peaks in the conductivity, which increase in number and become narrower as the temperature is gradually decreased, without the need for tuning mass of the scalar to be close to the Breitenlohner-Freedman bound. Finally, we investigate the inclusion of a generalized ¿theta term¿ producing Hall effect without magnetic field.

Structural and optical properties of InAs/GaAs quantum structures

The goal of the thesis was to study fundamental structural and optical properties of InAs islands and In(Ga)As quantum rings. The research was carried out at the Department of Micro and Nanosciences of Helsinki University of Technology. A good surface quality can be essential for the potential applications in optoelectronic devices. For such device applications it is usually necessary to control size, density and arrangement of the islands. In order to study the dependence of the structural properties of the islands and the quantum rings on growth conditions, atomic force microscope was used. Obtained results reveal that the size and the density of the In(Ga)As quantum rings strongly depend on the growth temperature, the annealing time and the thickness of the partial capping layer. From obtained results it is possible to conclude that to get round shape islands and high density one has to use growth temperature of 500 ̊C. In the case of formation of In(Ga)As quantum rings the effect of mobility anisotropy is observed that so the shape of the rings is not symmetric. To exclude this effect it is preferable to use a higher annealing temperature of 570 ̊C. Optical properties were characterized by PL spectroscopy. PL emission was observed from buried InAs quantum dots and In(Ga)As quantum rings grown with different annealing time and temperature and covered with a various thickness of the partial capping layer.

Galvanomagnetic Phenomena in Ga1_xMnxAs

In this work temperature dependences of resistivity in zero field have been obtained for epitaxially grown Ga1_xMnxAs thin films with 6 % and 8 % Mn content in 50 300 K temperature range. Decrease of resistivity has been observed. Negative magnetoresistance has been explained by empirical spin dependent hopping model. Hall effect has been studied and anomalous Hall effect, inherent to ferromagnetic materials, has been observed. Both normal and anomalous Hall coefficients have been calculated from experimental data, as well as hole densities. Activation energy of impurity level has been estimated.

Spin-Dynamics in Cold Gases of 87Rb and Atomic Hydrogen. The spins they are a-changin’

In this thesis the dynamics of cold gaseous atoms is studied. Two different atomic species and two different experimental techniques have been used. In the first part of the thesis experiments with Bose-Einstein condensates of Rb-87 are presented. In these experiments the methods of laser cooling and magnetic trapping of atoms were utilized. An atom chip was used as the experimental technique for implementation of magnetic trapping. The atom chip is a small integrated instrument allowing accurate and detailed manipulation of the atoms. The experiments with Rb-87 probed the behaviour of a falling beam of atoms outcoupled from the Bose-Einstein condensate by electromagnetic field induced spin flips. In the experiments a correspondence between the phases of the outcoupling radio frequency field and the falling beam of atoms was found. In the second part of the thesis experiments of spin dynamics in cold atomic hydrogen gas are discussed. The experiments with atomic hydrogen are conducted in a cryostat using a dilution refrigerator as the cooling method. These experiments concentrated on explaining and quantifying modulations in the electron spin resonance spectra of doubly polarized atomic hydrogen. The modifications to the previous experimental setup are described and the observation of electron spin waves is presented. The observed spin wave modes were caused by the identical spin rotation effect. These modes have a strong dependence on the spatial profile of the polarizing magnetic field. We also demonstrated confinement of these modes in regions of strong magnetic field and manipulated their spatial distribution by changing the position of the field maximum.