965 resultados para Pulse techniques (Electronics)


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Used in chirped-pulse amplification system and based on multi-layer thin film stack, pulse compressor gratings (PCG) are etched by ion-beam and holographic techniques. Diffraction efficiency and laser-induced damage threshold rely on the structural parameters of gratings. On the other hand, they depend greatly on the design of multi-layer. A theoretic design is given for dielectric multi-layer, which is exposed at 413.1 nm and used at 1053 nm. The influences of coating design on optical characters are described in detail. The analysis shows that a coating stack of H3L (H2L) (boolean AND) 9H0.5L2.01H meets the specifications of PCG well. And there is good agreement of transmission between experimental and the theoretic design. (c) 2005 Elsevier GmbH. All rights reserved.

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this paper quantifies effects of using three different pulse width modulation (PWM) schemes on the losses in the inverter and induction motor of a 1 kW drive. Direct measurements of losses have been made with a calorimeter. Results show that for the inverter, discontinuous PWM excitation reduces losses by up to 15% compared to sine and symmetrical space vector PWM methods. However, at a low modulation index the greater harmonic content with discontinuous PWM increased motor losses by nearly 20%. This study demonstrates the importance of careful choice of modulation scheme to achieve high overall drive efficiency. © 2005 IEEE.

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Materials with nonlinear optical properties are much sought after for ultrafast photonic applications. Mode-locked lasers can generate ultrafast pulses using saturable absorbers[1]. Currently, the dominant technology is based on semiconductor saturable absorber mirrors (SESAMs). However, narrow tuning range (tens of nm), complex fabrication and packaging limit their applications[2]. Single wall nanotubes (SWNTs) and graphene offer simpler and cost-effective solutions[1]. Broadband operation can be achieved in SWNTs using a distribution of tube diameters[1,3], or by using graphene[4-8], due to the gapless linear dispersion of Dirac electrons[8,9]. © 2011 IEEE.

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This paper presents an investigation of the mode-locking performance of a two-section external-cavity mode-locked InGaAs quantum-dot laser diode, focusing on repetition rate, pulse duration and pulse energy. The lowest repetition rate to-date of any passively mode-locked semiconductor laser diode is demonstrated (310 MHz) and a restriction on the pulse energy (at 0.4 pJ) for the shortest pulse durations is identified. Fundamental mode-locking from 310 MHz to 1.1 GHz was investigated, and harmonic mode-locking was achieved up to a repetition rate of 4.4 GHz. Fourier transform limited subpicosecond pulse generation was realized through implementation of an intra-cavity glass etalon, and pulse durations from 930fs to 8.3ps were demonstrated for a repetition rate of 1 GHz. For all investigations, mode-locking with the shortest pulse durations yielded constant pulse energies of ∼0.4 pJ, revealing an independence of the pulse energy on all the mode-locking parameters investigated (cavity configuration, driving conditions, pulse duration, repetition rate, and output power). © 2011 IEEE.

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This review summarises the recent advances in the field of silicon nanowire electronics from bottom-up assembled materials. The aim is to draw a comparison between bottom-up and top-down approaches, examining respective achievements and evaluating advantages and disadvantages of each methodology. Existing techniques for synthesis and doping are discussed to provide the framework in which practical electronic applications can be developed. Next, key device categories are reviewed, emphasising current challenges and proposed solutions. Finally, field perspectives are outlined. © 2012 Elsevier Ltd.

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Numerical methods based on the Reynolds Averaged Navier-Stokes (RANS) and Large Eddy Simulation (LES) equations are applied to the thermal prediction of flows representative of those found in and around electronics systems and components. Low Reynolds number flows through a heated ribbed channel, around a heated cube and within a complex electronics system case are investigated using linear and nonlinear LES models, hybrid RANS-LES and RANS-Numerical-LES (RANS-NLES) methods. Flow and heat transfer predictions using these techniques are in good agreement with each other and experimental data for a range of grid resolutions. Using second order central differences, the RANS-NLES method performs well for all simulations. © 2011 Elsevier Inc.

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The prediction of turbulent oscillatory flow at around transitional Reynolds numbers is considered for an idealized electronics system. To assess the accuracy of turbulence models, comparison is made with measurements. A stochastic procedure is used to recover instantaneous velocity time traces from predictions. This procedure enables more direct comparison with turbulence intensity measurements which have not been filtered to remove the oscillatory flow component. Normal wall distances, required in some turbulence models, are evaluated using a modified Poisson equation based technique. A range of zero, one and two equation turbulence models are tested, including zonal and a non-linear eddy viscosity models. The non-linear and zonal models showed potential for accuracy improvements.

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The RF locking of a self-Q-switching diode laser is shown to reduce the jitter of a 2.48 GHz train of 1 W peak power picosecond pulses to less than 300 fs. By using direct modulation of the loss in the Q-switched laser, direct encoding of data has been achieved at rates in excess of 2 Gbit/s.

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High power bandwidth-limited picosecond pulses with peak powers in excess of 200 mW have been generated using multi-contact distributed feedback laser diodes for the first time. The pulses have widths typically less than 10 ps, time-bandwidth products of as little as 0·24, and can be generated on demand at generator limited repetition rates of up to 140 MHz.

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In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1× 1 cm2 area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme. © 2014 IEEE.